JP4574211B2 - 光源装置、当該光源装置を有する露光装置 - Google Patents
光源装置、当該光源装置を有する露光装置 Download PDFInfo
- Publication number
- JP4574211B2 JP4574211B2 JP2004123502A JP2004123502A JP4574211B2 JP 4574211 B2 JP4574211 B2 JP 4574211B2 JP 2004123502 A JP2004123502 A JP 2004123502A JP 2004123502 A JP2004123502 A JP 2004123502A JP 4574211 B2 JP4574211 B2 JP 4574211B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- target
- light source
- condensing point
- source device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
- H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
- H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/002—Supply of the plasma generating material
- H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Plasma Technology (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004123502A JP4574211B2 (ja) | 2004-04-19 | 2004-04-19 | 光源装置、当該光源装置を有する露光装置 |
| EP05252408A EP1589792B1 (en) | 2004-04-19 | 2005-04-18 | Light source apparatus and exposure apparatus having the same |
| US11/109,078 US7348582B2 (en) | 2004-04-19 | 2005-04-18 | Light source apparatus and exposure apparatus having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004123502A JP4574211B2 (ja) | 2004-04-19 | 2004-04-19 | 光源装置、当該光源装置を有する露光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005310453A JP2005310453A (ja) | 2005-11-04 |
| JP2005310453A5 JP2005310453A5 (enExample) | 2007-05-31 |
| JP4574211B2 true JP4574211B2 (ja) | 2010-11-04 |
Family
ID=34940888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004123502A Expired - Fee Related JP4574211B2 (ja) | 2004-04-19 | 2004-04-19 | 光源装置、当該光源装置を有する露光装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7348582B2 (enExample) |
| EP (1) | EP1589792B1 (enExample) |
| JP (1) | JP4574211B2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4878108B2 (ja) * | 2004-07-14 | 2012-02-15 | キヤノン株式会社 | 露光装置、デバイス製造方法、および測定装置 |
| JP2006128342A (ja) * | 2004-10-28 | 2006-05-18 | Canon Inc | 露光装置、光源装置及びデバイス製造方法 |
| JP5301165B2 (ja) * | 2005-02-25 | 2013-09-25 | サイマー インコーポレイテッド | レーザ生成プラズマeuv光源 |
| KR101370203B1 (ko) * | 2005-11-10 | 2014-03-05 | 칼 짜이스 에스엠테 게엠베하 | 광원의 요동을 측정하기 위한 시스템을 구비한 euv 조명시스템 |
| JP2008041742A (ja) * | 2006-08-02 | 2008-02-21 | Ushio Inc | 極端紫外光光源装置 |
| NL2003192A1 (nl) * | 2008-07-30 | 2010-02-02 | Asml Netherlands Bv | Alignment of collector device in lithographic apparatus. |
| ATE536567T1 (de) * | 2008-08-14 | 2011-12-15 | Asml Netherlands Bv | Strahlungsquelle und verfahren zur strahlungserzeugung |
| US8445876B2 (en) * | 2008-10-24 | 2013-05-21 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
| FR2939529A1 (fr) * | 2008-12-04 | 2010-06-11 | Ecole Polytech | Dispositif optique de controle de l'orientation et de la position d'une surface en mouvement par mesure interferometrique et source secondaire generee par interaction laser-matiere comprenant un tel dispositif |
| US8138487B2 (en) * | 2009-04-09 | 2012-03-20 | Cymer, Inc. | System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber |
| JP5308973B2 (ja) | 2009-09-16 | 2013-10-09 | 富士フイルム株式会社 | 医用画像情報表示装置および方法並びにプログラム |
| JP5802410B2 (ja) * | 2010-03-29 | 2015-10-28 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| DE102010050947B4 (de) | 2010-11-10 | 2017-07-13 | Ushio Denki Kabushiki Kaisha | Verfahren und Anordnung zur Stabilisierung des Quellortes der Erzeugung extrem ultravioletter (EUV-)Strahlung auf Basis eines Entladungsplasmas |
| US9000405B2 (en) * | 2013-03-15 | 2015-04-07 | Asml Netherlands B.V. | Beam position control for an extreme ultraviolet light source |
| JP6339816B2 (ja) * | 2014-02-10 | 2018-06-06 | 株式会社Fuji | プラズマ処理判断システム |
| JPWO2015166524A1 (ja) * | 2014-04-28 | 2017-04-20 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| WO2016013102A1 (ja) * | 2014-07-25 | 2016-01-28 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| WO2017042881A1 (ja) | 2015-09-08 | 2017-03-16 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| WO2017126065A1 (ja) * | 2016-01-20 | 2017-07-27 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| WO2017163315A1 (ja) * | 2016-03-22 | 2017-09-28 | ギガフォトン株式会社 | ドロップレットタイミングセンサ |
| JP7641257B2 (ja) * | 2022-08-31 | 2025-03-06 | レーザーテック株式会社 | 位置検出装置及び位置検出方法 |
| JP7657877B1 (ja) | 2023-09-25 | 2025-04-07 | レーザーテック株式会社 | 光源装置、検査装置、露光装置、光源制御方法、検査方法及び露光方法 |
| JP7657878B1 (ja) | 2023-09-25 | 2025-04-07 | レーザーテック株式会社 | 光源装置、検査装置、露光装置、光源制御方法、検査方法及び露光方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000056099A (ja) | 1998-08-13 | 2000-02-25 | Nikon Corp | X線照射装置及びx線発生位置検出器 |
| JP4273574B2 (ja) * | 1999-05-27 | 2009-06-03 | 株式会社ニコン | X線発生装置及びこれを有するx線露光装置及びx線の発生方法 |
| US6324255B1 (en) * | 1998-08-13 | 2001-11-27 | Nikon Technologies, Inc. | X-ray irradiation apparatus and x-ray exposure apparatus |
| US6792076B2 (en) * | 2002-05-28 | 2004-09-14 | Northrop Grumman Corporation | Target steering system for EUV droplet generators |
| JP2004128105A (ja) * | 2002-10-01 | 2004-04-22 | Nikon Corp | X線発生装置及び露光装置 |
| DE10339495B4 (de) * | 2002-10-08 | 2007-10-04 | Xtreme Technologies Gmbh | Anordnung zur optischen Detektion eines bewegten Targetstromes für eine gepulste energiestrahlgepumpte Strahlungserzeugung |
| DE10314849B3 (de) * | 2003-03-28 | 2004-12-30 | Xtreme Technologies Gmbh | Anordnung zur Stabilisierung der Strahlungsemission eines Plasmas |
| JP2005235959A (ja) * | 2004-02-18 | 2005-09-02 | Canon Inc | 光発生装置及び露光装置 |
| US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| EP1730764A4 (en) * | 2004-03-17 | 2010-08-18 | Cymer Inc | LPP EUV LIGHT SOURCE |
| JP4878108B2 (ja) * | 2004-07-14 | 2012-02-15 | キヤノン株式会社 | 露光装置、デバイス製造方法、および測定装置 |
-
2004
- 2004-04-19 JP JP2004123502A patent/JP4574211B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-18 US US11/109,078 patent/US7348582B2/en active Active
- 2005-04-18 EP EP05252408A patent/EP1589792B1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP1589792A3 (en) | 2008-10-29 |
| US7348582B2 (en) | 2008-03-25 |
| EP1589792B1 (en) | 2013-01-23 |
| EP1589792A2 (en) | 2005-10-26 |
| JP2005310453A (ja) | 2005-11-04 |
| US20060192156A1 (en) | 2006-08-31 |
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