JP4561629B2 - 薄膜積層コンデンサ - Google Patents
薄膜積層コンデンサ Download PDFInfo
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- JP4561629B2 JP4561629B2 JP2005502880A JP2005502880A JP4561629B2 JP 4561629 B2 JP4561629 B2 JP 4561629B2 JP 2005502880 A JP2005502880 A JP 2005502880A JP 2005502880 A JP2005502880 A JP 2005502880A JP 4561629 B2 JP4561629 B2 JP 4561629B2
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- bismuth layered
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- bismuth
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- 239000010409 thin film Substances 0.000 title claims description 145
- 239000003990 capacitor Substances 0.000 title claims description 72
- 229910052797 bismuth Inorganic materials 0.000 claims description 244
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 235
- 150000001875 compounds Chemical class 0.000 claims description 209
- 239000000203 mixture Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 193
- 239000010408 film Substances 0.000 description 84
- 238000000034 method Methods 0.000 description 34
- 239000011248 coating agent Substances 0.000 description 29
- 238000000576 coating method Methods 0.000 description 29
- 239000000463 material Substances 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 239000002994 raw material Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 12
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 9
- 238000001354 calcination Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000003985 ceramic capacitor Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001621 bismuth Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910003114 SrVO Inorganic materials 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
- C01G29/006—Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6585—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/787—Oriented grains
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/957—Making metal-insulator-metal device
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- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Structural Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
組成式:(Bi2O2)2+(Am−1BmO3m+1)2−、またはBi2Am−1BmO3m+3で表され、前記組成式中の記号mが正数、記号AがNa、K、Pb、Ba、Sr、CaおよびBiから選ばれる少なくとも1つの元素、記号BがFe、Co、Cr、Ga、Ti、Nb、Ta、Sb、V、Mo、WおよびMnから選ばれる少なくとも1つの元素である第1ビスマス層状化合物層と、
前記第1ビスマス層状化合物層と積層され、前記第1ビスマス層状化合物層の前記組成式よりもビスマスが過剰に含有してある第2ビスマス層状化合物層とを少なくとも有する。
基板上に、下部電極、誘電体薄膜および上部電極が順次形成してある薄膜容量素子であって、
前記誘電体薄膜が、上記のいずれかに記載の高誘電率絶縁膜で構成してある。
基板上に、誘電体薄膜と内部電極薄膜とが交互に複数積層してある薄膜積層コンデンサであって、
前記誘電体薄膜が、上記のいずれかに記載の高誘電率絶縁膜で構成してあることを特徴とする。
前記下部電極の表面に前記第2ビスマス層状化合物層を形成する工程と、
前記第2ビスマス層状化合物層の表面に前記第1ビスマス層状化合物層を形成する工程と、を有する。
図2は図1に示す薄膜コンデンサの製造過程を示すフローチャート図、
図3は本発明の他の実施形態に係る薄膜積層コンデンサの概略断面図である。
発明を実施するための最良の態様
第1実施形態
本実施形態では、薄膜容量素子として、誘電体薄膜を単層で形成する薄膜コンデンサを例示して説明する。
図1Aに示すように、本発明の一実施形態に係る薄膜コンデンサ2は、基板4を有し、この基板4の上には、絶縁層5を介して下部電極薄膜6が形成されている。下部電極薄膜6の上には誘電体薄膜(高誘電率絶縁膜)8が形成されている。そして、図1Bに示すように、誘電体薄膜8の上には上部電極薄膜10が形成される。
第2ビスマス層状化合物を下部電極6の表面に位置させることで、[001]方位に配向した下部電極はもちろん、アモルファス、無配向、[001]方位以外(例えば[111]方位)に配向した電極を用いた場合でも、c軸配向度が高い誘電体膜を極めて容易に製造することができる。
下部電極薄膜6の厚みは、特に限定されないが、好ましくは10〜1000nm、より好ましくは50〜200nm程度である。
F(%)=(P−P0)/(1−P0)×100 …(1)
式(1)において、P0は、完全にランダムな配向をしている多結晶体のc軸のX線回析強度、すなわち、完全にランダムな配向をしている多結晶体の(001)面からの反射強度I(001)の合計ΣI(001)と、その多結晶体の各結晶面(hkl)からの反射強度I(hkl)の合計ΣI(hkl)との比({ΣI(001)/ΣI(hkl)})であり、Pは、ビスマス層状化合物のc軸のX線回析強度、すなわち、ビスマス層状化合物の(001)面からの反射強度I(001)の合計ΣI(001)と、そのビスマス層状化合物の各結晶面(hkl)からの反射強度I(hkl)の合計ΣI(hkl)との比({ΣI(001)/ΣI(hkl)})である。ここに、h、k、lは、それぞれ、0以上の任意の整数値を取ることができる。
ここに、P0は定数であるから、(001)面からの反射強度I(001)の合計ΣI(001)と、各結晶面(hkl)からの反射強度I(hkl)の合計ΣI(hkl)が等しいとき、すなわち、P=1のときに、異方性を有する材料のc軸配向度Fは100%となる。
本実施形態では、薄膜容量素子として、誘電体薄膜を多層で形成する薄膜積層コンデンサを例示して説明する。
図3に示すように、本発明の一実施形態に係る薄膜積層コンデンサ20は、コンデンサ素体22を有する。コンデンサ素体22は、基板4a上に、誘電体薄膜80と、内部電極薄膜24,26とが交互に複数配置してあり、しかも最外部に配置される誘電体薄膜80を覆うように保護層30が形成してある多層構造を持つ。コンデンサ素体22の両端部には、一対の外部電極28,29が形成してあり、該一対の外部電極28,29は、コンデンサ素体22の内部で交互に複数配置された内部電極薄膜24,26の露出端面に電気的に接続されてコンデンサ回路を構成する。コンデンサ素体22の形状は、特に限定されないが、通常、直方体状とされる。また、その寸法は特に限定されないが、たとえば縦(0.01〜10mm)×横(0.01〜10mm)×高さ(0.01〜1mm)程度とされる。
誘電率(単位なし)は、コンデンササンプルに対し、インピーダンスアナライザー(HP4194A)を用いて、室温(25℃)、測定周波数100kHz(AC20mV)の条件で測定された静電容量と、コンデンササンプルの電極寸法および電極間距離とから算出した。
表2
表3
Claims (9)
- 基板上に、誘電体薄膜と内部電極薄膜とが交互に複数積層してある薄膜積層コンデンサであって、
前記誘電体薄膜が、
組成式:(Bi2 O2 )2+(Am−1 Bm O3m+1)2−、またはBi2 Am−1 Bm O3m+3で表され、前記組成式中の記号mが4または5、記号AがNa、K、Pb、Ba、Sr、CaおよびBiから選ばれる少なくとも1つの元素、記号BがFe、Co、Cr、Ga、Ti、Nb、Ta、Sb、V、Mo、WおよびMnから選ばれる少なくとも1つの元素である第1ビスマス層状化合物層と、
前記第1ビスマス層状化合物層と積層され、前記第1ビスマス層状化合物層の前記組成式よりもビスマスが過剰に含有してある第2ビスマス層状化合物層とを少なくとも有し、
前記第2ビスマス層状化合物層の厚みが、前記第1ビスマス層状化合物層の厚みよりも薄く、
前記第2ビスマス層状化合物層におけるc軸が前記内部電極薄膜の表面に対して垂直に配向している薄膜積層コンデンサ。 - 前記内部電極薄膜の表面に前記第2ビスマス層状化合物層が積層してあり、前記第2ビスマス層状化合物層の表面に前記第1ビスマス層状化合物層が積層してある請求項1に記載の薄膜積層コンデンサ。
- 前記誘電体薄膜の厚さが、10〜500nmである請求項1または2に記載の薄膜積層コンデンサ。
- 前記第1ビスマス層状化合物層の前記組成式に対して、前記第2ビスマス層状化合物層に含まれるビスマスの過剰量が、0.1モル倍以上0.5モル倍以下である請求項1〜3のいずれかに記載の薄膜積層コンデンサ。
- 前記第2ビスマス層状化合物層の厚みが、1nm以上300nm未満である請求項1〜4のいずれかに記載の薄膜積層コンデンサ。
- 前記第2ビスマス層状化合物層のc軸配向度が80%以上である請求項1〜5のいずれかに記載の薄膜積層コンデンサ。
- 前記第1ビスマス層状化合物層のc軸配向度が80%以上である請求項1〜6のいずれかに記載の薄膜積層コンデンサ。
- 前記第2ビスマス層状化合物層は、ビスマスの過剰量が異なる複数の層で構成してある請求項1〜7のいずれかに記載の薄膜積層コンデンサ。
- 前記第2ビスマス層状化合物層は、ビスマスの過剰量が層厚方向に徐々に変化する層で構成してある請求項1〜7のいずれかに記載の薄膜積層コンデンサ。
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