JP4560814B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 54
- 238000010438 heat treatment Methods 0.000 claims description 134
- 238000009792 diffusion process Methods 0.000 claims description 116
- 239000000758 substrate Substances 0.000 claims description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 44
- 229910052796 boron Inorganic materials 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 42
- 230000007547 defect Effects 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910015900 BF3 Inorganic materials 0.000 claims description 18
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052731 fluorine Inorganic materials 0.000 claims description 18
- 239000011737 fluorine Substances 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 16
- 230000001133 acceleration Effects 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 115
- 230000000052 comparative effect Effects 0.000 description 21
- 230000002093 peripheral effect Effects 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 17
- 238000005259 measurement Methods 0.000 description 17
- 238000002513 implantation Methods 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 230000014759 maintenance of location Effects 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004719 convergent beam electron diffraction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910021341 titanium silicide Inorganic materials 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Description
980〜1020℃の基板温度で熱処理する第1の熱処理(第1の高温熱処理)工程と、
700〜850℃の基板温度で熱処理する第2の熱処理(第1の低温熱処理)工程とをこの順に有することを特徴としている。
前記第1及び第2の領域にそれぞれトランジスタを形成する工程と、
前記第1の領域に前記多結晶シリコン電極を形成する工程と、
980〜1020℃の基板温度で熱処理する第1の熱処理(第1の高温熱処理)工程と、
700〜850℃の基板温度で熱処理する第2の熱処理(第1の低温熱処理)工程と、
前記第2の領域の拡散層にフッ素化合物又はフッ素を注入する注入工程と、
500〜850℃の基板温度で熱処理する第3の熱処理(第2の低温熱処理)工程と
をこの順に有することを特徴としている。
第1の領域に前記多結晶シリコン電極を形成する工程と、
980〜1020℃の基板温度で熱処理する第1の熱処理(第1の高温熱処理)工程と、
700〜850℃の基板温度で熱処理する第2の熱処理(第1の低温熱処理)工程と、
前記第1の熱処理工程の温度よりも高い最高温度でスパイクアニールを行う第3の熱処理工程と
をこの順に有することを特徴としている。
[参考文献1]
T.Umeda, Y.Mochizuki, K.Okonogi, K.Hamada, "Defects related to DRAM leakage current studied by electrically detected magnetic resonance" Physica B 308-310, 1169-1172 (2001)
[参考文献2]
A.Toda, N.Ikarashi, H.Ono, "Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction" J.Crystal Growth 210(2000)341-345
10A:セルトランジスタ形成領域
10B:周辺回路トランジスタ形成領域
11:シリコン基板(半導体基板)
12:素子分離領域
13:n型シールド層
14:p型ウエル層
15:n型ウエル層
16:ゲート酸化膜
17:ゲート電極
18:絶縁膜パターン
19:セルトランジスタのn型拡散層
20:周辺回路トランジスタのp型低濃度拡散層
21:サイドスペーサ(窒化シリコン)
22:周辺回路トランジスタのp型高濃度拡散層
23:第1層間絶縁膜
24:多結晶シリコンプラグ
25:第2層間絶縁膜
26:コンタクト穴
27:コンタクト穴
28:コンタクト穴
29,30:金属プラグ
31:冶金的接合位置
32:p型層
33:n型層
Claims (16)
- シリコン基板上に、多結晶シリコンプラグに接続された拡散層を有するトランジスタを形成する工程と、
前記多結晶シリコンプラグの抵抗を低減する熱処理であって、980〜1020℃の基板温度で1〜30秒間熱処理する第1の熱処理工程と、
前記拡散層に格子間シリコン原子を供給して空孔型欠陥を減少させる熱処理であって、
700〜850℃の基板温度で1〜30分間熱処理する第2の熱処理工程と、
をこの順に有することを特徴とする半導体装置の製造方法。 - 前記第1の熱処理工程と前記第2の熱処理工程とを連続して行うことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記拡散層がn型拡散層であることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 多結晶シリコンプラグに接続された拡散層を有するトランジスタをシリコン基板上の第1の領域に、金属プラグに接続された拡散層を有するトランジスタを前記シリコン基板上の第2の領域に、それぞれ具備する半導体装置の製造方法において、
前記シリコン基板上の第1及び第2の領域にそれぞれトランジスタを形成する工程と、
前記第1の領域に前記多結晶シリコンプラグを形成する工程と、
前記多結晶シリコンプラグの抵抗を低減する熱処理であって、980〜1020℃の基板温度で1〜30秒間熱処理する第1の熱処理工程と、
前記第1の領域の前記拡散層に格子間シリコン原子を供給して空孔型欠陥を減少させる熱処理であって、700〜850℃の基板温度で1〜30分間熱処理する第2の熱処理工程と、
前記第2の領域の前記拡散層にフッ素化合物又はフッ素を注入する注入工程と、
第3の熱処理工程と、
前記金属プラグを形成する工程と、
をこの順に有することを特徴とする半導体装置の製造方法。 - 前記シリコン基板上の第1及び第2の領域にそれぞれトランジスタを形成する工程が、前記第2の領域の前記拡散層に不純物を注入する工程を含み、
前記第3の熱処理が、前記第2の領域の拡散層に注入された前記不純物を活性化する熱処理であることを特徴とする請求項4に記載の半導体装置の製造方法。 - 前記第2の領域の拡散層に注入された前記不純物がホウ素であることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記第3の熱処理工程が、500〜850℃の基板温度で熱処理する工程であることを特徴とする請求項4乃至6のいずれか一項に記載の半導体装置の製造方法。
- 前記注入工程は、
加速エネルギーが1〜50keVで、ドーズ量が1〜5×1015/cm2の条件でフッ化ホウ素を注入することを特徴とする請求項4乃至7のいずれか一項に記載の半導体装置の製造方法。 - 前記第1の熱処理工程と前記第2の熱処理工程とを連続して行うことを特徴とする請求項4乃至8のいずれか一項に記載の半導体装置の製造方法。
- 前記多結晶シリコンプラグに接続された拡散層がn型拡散層であり、
前記金属プラグに接続された拡散層がp型拡散層であること
を特徴とする請求項4乃至9のいずれか一項に記載の半導体装置の製造方法。 - 多結晶シリコンプラグに接続された拡散層を有するトランジスタをシリコン基板上の第1の領域に、金属プラグに接続された拡散層を有するトランジスタを前記シリコン基板上の第2の領域に、それぞれ具備する半導体装置の製造方法において、
前記シリコン基板上の第1及び第2の領域にそれぞれトランジスタを形成する工程と、
前記第1の領域に前記多結晶シリコンプラグを形成する工程と、
前記多結晶シリコンプラグの抵抗を低減する熱処理であって、980〜1020℃の基板温度で1〜30秒間熱処理する第1の熱処理工程と、
前記第1の領域の前記拡散層に格子間シリコン原子を供給して空孔型欠陥を減少させる熱処理であって、700〜850℃の基板温度で1〜30分間熱処理する第2の熱処理工程と、
最高基板温度が1000〜1050℃で熱処理するスパイクアニール工程と、
をこの順に有することを特徴とする半導体装置の製造方法。 - 前記シリコン基板上の第1及び第2の領域にそれぞれトランジスタを形成する工程が、
前記第2の領域の前記拡散層に不純物を注入する工程を含み、
前記スパイクアニール工程が、前記第2の領域の拡散層に注入された前記不純物を活性化する熱処理であることを特徴とする請求項11に記載の半導体装置の製造方法。 - 前記第2の領域の拡散層に注入された前記不純物がホウ素であることを特徴とする請求項12に記載の半導体装置の製造方法。
- 前記スパイクアニールが、
昇温レートが100℃/秒以上であり、
前記最高温度での保持時間が1秒以下であり、
降温レートが50℃/秒以上であること
を特徴とする請求項11乃至13のいずれか一項に記載の半導体装置の製造方法。 - 前記第1の熱処理工程と前記第2の熱処理工程とを連続して行うことを特徴とする請求項11乃至14のいずれか一項に記載の半導体装置の製造方法。
- 前記多結晶シリコンプラグに接続された拡散層がn型拡散層であり、
前記金属プラグに接続された拡散層がp型拡散層であること
を特徴とする請求項11乃至15のいずれか一項に記載の半導体装置の製造方法。
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US11/153,321 US7700431B2 (en) | 2004-06-17 | 2005-06-16 | Method for manufacturing a semiconductor device having polysilicon plugs |
CNB2005100764887A CN100442478C (zh) | 2004-06-17 | 2005-06-16 | 具有多晶硅插头的半导体器件的制造方法 |
TW094119933A TWI261896B (en) | 2004-06-17 | 2005-06-16 | Method for manufacturing a semiconductor device having polysilicon plugs |
KR1020050052416A KR100679206B1 (ko) | 2004-06-17 | 2005-06-17 | 다결정 실리콘 플러그를 구비하는 반도체 장치의 제조 방법 |
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JP5104036B2 (ja) | 2007-05-24 | 2012-12-19 | ソニー株式会社 | 固体撮像素子とその製造方法及び撮像装置 |
JP6013201B2 (ja) * | 2012-03-22 | 2016-10-25 | 三菱マテリアル電子化成株式会社 | 多結晶シリコンインゴット及び多結晶シリコンインゴットの製造方法 |
US10032876B2 (en) | 2014-03-13 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact silicide having a non-angular profile |
US20150372099A1 (en) * | 2014-06-19 | 2015-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact silicide formation using a spike annealing process |
KR102482368B1 (ko) * | 2018-06-18 | 2022-12-29 | 삼성전자주식회사 | 반도체 장치의 불량 검출 방법 |
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US6093615A (en) * | 1994-08-15 | 2000-07-25 | Micron Technology, Inc. | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug |
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US5872032A (en) * | 1997-11-03 | 1999-02-16 | Vanguard International Semiconductor Corporation | Fabrication method for a DRAM cell with bipolar charge amplification |
US6482684B1 (en) * | 1998-03-27 | 2002-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a TFT with Ge seeded amorphous Si layer |
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US6583460B1 (en) * | 2000-08-29 | 2003-06-24 | Micron Technology, Inc. | Method of forming a metal to polysilicon contact in oxygen environment |
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