JP4554292B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP4554292B2
JP4554292B2 JP2004211354A JP2004211354A JP4554292B2 JP 4554292 B2 JP4554292 B2 JP 4554292B2 JP 2004211354 A JP2004211354 A JP 2004211354A JP 2004211354 A JP2004211354 A JP 2004211354A JP 4554292 B2 JP4554292 B2 JP 4554292B2
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Japan
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semiconductor layer
semi
amorphous semiconductor
manufacturing
thin film
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Expired - Fee Related
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JP2004211354A
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Japanese (ja)
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JP2005150685A (ja
JP2005150685A5 (https=
Inventor
舜平 山崎
馨太郎 今井
慎志 前川
誠 古野
理 中村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004211354A priority Critical patent/JP4554292B2/ja
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Publication of JP2005150685A5 publication Critical patent/JP2005150685A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004211354A 2003-07-18 2004-07-20 薄膜トランジスタの作製方法 Expired - Fee Related JP4554292B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004211354A JP4554292B2 (ja) 2003-07-18 2004-07-20 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003277144 2003-07-18
JP2003361289 2003-10-21
JP2004211354A JP4554292B2 (ja) 2003-07-18 2004-07-20 薄膜トランジスタの作製方法

Publications (3)

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JP2005150685A JP2005150685A (ja) 2005-06-09
JP2005150685A5 JP2005150685A5 (https=) 2007-06-14
JP4554292B2 true JP4554292B2 (ja) 2010-09-29

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JP2004211354A Expired - Fee Related JP4554292B2 (ja) 2003-07-18 2004-07-20 薄膜トランジスタの作製方法

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP5117001B2 (ja) * 2006-07-07 2013-01-09 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP2009071289A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8101444B2 (en) * 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
US20090141004A1 (en) 2007-12-03 2009-06-04 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP5498711B2 (ja) * 2008-03-01 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタ
JP5602389B2 (ja) * 2008-05-16 2014-10-08 株式会社半導体エネルギー研究所 薄膜トランジスタ
JP5518366B2 (ja) * 2008-05-16 2014-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタ
WO2010047217A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
JP3238020B2 (ja) * 1994-09-16 2001-12-10 株式会社東芝 アクティブマトリクス表示装置の製造方法
KR0171984B1 (ko) * 1995-12-11 1999-03-30 김주용 박막 트랜지스터의 자기 정렬 노광 방법
JP2915397B1 (ja) * 1998-05-01 1999-07-05 インターナショナル・ビジネス・マシーンズ・コーポレイション バックチャネル効果を防止する薄膜トランジスタおよびその製造方法
JP2000357797A (ja) * 1999-06-15 2000-12-26 Toshiba Corp 薄膜トランジスタの製造方法
JP3965562B2 (ja) * 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器

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