JP4550206B2 - 不揮発性半導体記憶装置の駆動方法 - Google Patents

不揮発性半導体記憶装置の駆動方法 Download PDF

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Publication number
JP4550206B2
JP4550206B2 JP2000040197A JP2000040197A JP4550206B2 JP 4550206 B2 JP4550206 B2 JP 4550206B2 JP 2000040197 A JP2000040197 A JP 2000040197A JP 2000040197 A JP2000040197 A JP 2000040197A JP 4550206 B2 JP4550206 B2 JP 4550206B2
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voltage level
memory device
semiconductor memory
nonvolatile semiconductor
gate
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Expired - Fee Related
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JP2000040197A
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Japanese (ja)
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JP2000306390A (ja
JP2000306390A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
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清彦 榊原
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Renesas Electronics Corp
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Renesas Electronics Corp
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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2000040197A 1999-02-19 2000-02-17 不揮発性半導体記憶装置の駆動方法 Expired - Fee Related JP4550206B2 (ja)

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JP2000040197A JP4550206B2 (ja) 1999-02-19 2000-02-17 不揮発性半導体記憶装置の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4222499 1999-02-19
JP11-42224 1999-02-19
JP2000040197A JP4550206B2 (ja) 1999-02-19 2000-02-17 不揮発性半導体記憶装置の駆動方法

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JP2009198631A Division JP5306115B2 (ja) 1999-02-19 2009-08-28 不揮発性半導体記憶装置およびその製造方法

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JP2000306390A JP2000306390A (ja) 2000-11-02
JP2000306390A5 JP2000306390A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2007-03-29
JP4550206B2 true JP4550206B2 (ja) 2010-09-22

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JP (1) JP4550206B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002050843A1 (en) * 2000-12-21 2002-06-27 Fujitsu Limited Nonvolatile semiconductor memory and method of erasure
US6614694B1 (en) * 2002-04-02 2003-09-02 Macronix International Co., Ltd. Erase scheme for non-volatile memory
CN100595923C (zh) * 2004-05-27 2010-03-24 株式会社瑞萨科技 集成半导体非易失性存储器的控制方法
JP4338656B2 (ja) 2005-02-15 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体記憶装置の書き込み方法
JP5458526B2 (ja) 2008-08-08 2014-04-02 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8369154B2 (en) * 2010-03-24 2013-02-05 Ememory Technology Inc. Channel hot electron injection programming method and related device
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method
US9520404B2 (en) * 2013-07-30 2016-12-13 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806552B2 (ja) * 1989-05-25 1998-09-30 日本電気株式会社 半導体不揮発性記憶装置
JPH08138394A (ja) * 1994-11-07 1996-05-31 Hitachi Ltd 半導体記憶装置
JPH09102198A (ja) * 1995-08-02 1997-04-15 Matsushita Electric Ind Co Ltd 半導体メモリ装置及びその制御方法
JP2982676B2 (ja) * 1995-12-08 1999-11-29 日本電気株式会社 不揮発性半導体記憶装置の過消去救済方法

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