JP4549620B2 - レーザ照射装置 - Google Patents
レーザ照射装置 Download PDFInfo
- Publication number
- JP4549620B2 JP4549620B2 JP2002349472A JP2002349472A JP4549620B2 JP 4549620 B2 JP4549620 B2 JP 4549620B2 JP 2002349472 A JP2002349472 A JP 2002349472A JP 2002349472 A JP2002349472 A JP 2002349472A JP 4549620 B2 JP4549620 B2 JP 4549620B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- laser beam
- angle
- irradiated
- irradiated surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Laser Beam Processing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002349472A JP4549620B2 (ja) | 2001-11-30 | 2002-12-02 | レーザ照射装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-366271 | 2001-11-30 | ||
JP2001366271 | 2001-11-30 | ||
JP2002349472A JP4549620B2 (ja) | 2001-11-30 | 2002-12-02 | レーザ照射装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009241950A Division JP5063660B2 (ja) | 2001-11-30 | 2009-10-21 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003243321A JP2003243321A (ja) | 2003-08-29 |
JP2003243321A5 JP2003243321A5 (enrdf_load_stackoverflow) | 2006-02-16 |
JP4549620B2 true JP4549620B2 (ja) | 2010-09-22 |
Family
ID=27790389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002349472A Expired - Fee Related JP4549620B2 (ja) | 2001-11-30 | 2002-12-02 | レーザ照射装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4549620B2 (enrdf_load_stackoverflow) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3949564B2 (ja) | 2001-11-30 | 2007-07-25 | 株式会社半導体エネルギー研究所 | レーザ照射装置及び半導体装置の作製方法 |
US20050237895A1 (en) * | 2004-04-23 | 2005-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
JP2005333117A (ja) * | 2004-04-23 | 2005-12-02 | Semiconductor Energy Lab Co Ltd | レーザ照射装置及び半導体装置の作製方法 |
US7982160B2 (en) * | 2008-03-31 | 2011-07-19 | Electro Scientific Industries, Inc. | Photonic clock stabilized laser comb processing |
JP2011071261A (ja) * | 2009-09-25 | 2011-04-07 | Ushio Inc | レーザーアニール装置 |
JP5843292B2 (ja) * | 2013-03-21 | 2016-01-13 | 株式会社日本製鋼所 | アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置 |
JP6430790B2 (ja) * | 2014-11-25 | 2018-11-28 | 株式会社ディスコ | レーザー加工装置 |
JP7083645B2 (ja) | 2018-01-11 | 2022-06-13 | Jswアクティナシステム株式会社 | レーザ処理装置、レーザ処理方法及び半導体装置の製造方法 |
KR102733328B1 (ko) * | 2019-11-11 | 2024-11-22 | 삼성디스플레이 주식회사 | 레이저 조사 장치 및 레이저 조사 방법 |
JP6967179B2 (ja) * | 2019-11-20 | 2021-11-17 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
JP7578403B2 (ja) * | 2020-03-02 | 2024-11-06 | 株式会社東京精密 | シリコンウエハの表面改質方法 |
KR20210111078A (ko) | 2020-03-02 | 2021-09-10 | 에이디알씨 주식회사 | 결정화된 반도체를 포함하는 박막 트랜지스터 및 이를 포함하는 표시 장치, 그리고 그 제조 방법 및 반도체 결정화 방법 |
CN116372360B (zh) * | 2023-02-21 | 2024-01-12 | 中国工程物理研究院激光聚变研究中心 | 一种微孔旋切扫描加工光学系统 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5650521A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Annealing device for semiconductor wafer using laser beam |
JPH0795538B2 (ja) * | 1986-05-02 | 1995-10-11 | 旭硝子株式会社 | レ−ザ−アニ−ル装置 |
JP3949564B2 (ja) * | 2001-11-30 | 2007-07-25 | 株式会社半導体エネルギー研究所 | レーザ照射装置及び半導体装置の作製方法 |
-
2002
- 2002-12-02 JP JP2002349472A patent/JP4549620B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003243321A (ja) | 2003-08-29 |
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