JP4549620B2 - レーザ照射装置 - Google Patents

レーザ照射装置 Download PDF

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Publication number
JP4549620B2
JP4549620B2 JP2002349472A JP2002349472A JP4549620B2 JP 4549620 B2 JP4549620 B2 JP 4549620B2 JP 2002349472 A JP2002349472 A JP 2002349472A JP 2002349472 A JP2002349472 A JP 2002349472A JP 4549620 B2 JP4549620 B2 JP 4549620B2
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Japan
Prior art keywords
laser
laser beam
angle
irradiated
irradiated surface
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Expired - Fee Related
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JP2002349472A
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English (en)
Japanese (ja)
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JP2003243321A5 (enrdf_load_stackoverflow
JP2003243321A (ja
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002349472A priority Critical patent/JP4549620B2/ja
Publication of JP2003243321A publication Critical patent/JP2003243321A/ja
Publication of JP2003243321A5 publication Critical patent/JP2003243321A5/ja
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Publication of JP4549620B2 publication Critical patent/JP4549620B2/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Laser Beam Processing (AREA)
JP2002349472A 2001-11-30 2002-12-02 レーザ照射装置 Expired - Fee Related JP4549620B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002349472A JP4549620B2 (ja) 2001-11-30 2002-12-02 レーザ照射装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-366271 2001-11-30
JP2001366271 2001-11-30
JP2002349472A JP4549620B2 (ja) 2001-11-30 2002-12-02 レーザ照射装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009241950A Division JP5063660B2 (ja) 2001-11-30 2009-10-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003243321A JP2003243321A (ja) 2003-08-29
JP2003243321A5 JP2003243321A5 (enrdf_load_stackoverflow) 2006-02-16
JP4549620B2 true JP4549620B2 (ja) 2010-09-22

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ID=27790389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002349472A Expired - Fee Related JP4549620B2 (ja) 2001-11-30 2002-12-02 レーザ照射装置

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JP (1) JP4549620B2 (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3949564B2 (ja) 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
US20050237895A1 (en) * 2004-04-23 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
JP2005333117A (ja) * 2004-04-23 2005-12-02 Semiconductor Energy Lab Co Ltd レーザ照射装置及び半導体装置の作製方法
US7982160B2 (en) * 2008-03-31 2011-07-19 Electro Scientific Industries, Inc. Photonic clock stabilized laser comb processing
JP2011071261A (ja) * 2009-09-25 2011-04-07 Ushio Inc レーザーアニール装置
JP5843292B2 (ja) * 2013-03-21 2016-01-13 株式会社日本製鋼所 アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置
JP6430790B2 (ja) * 2014-11-25 2018-11-28 株式会社ディスコ レーザー加工装置
JP7083645B2 (ja) 2018-01-11 2022-06-13 Ｊｓｗアクティナシステム株式会社 レーザ処理装置、レーザ処理方法及び半導体装置の製造方法
KR102733328B1 (ko) * 2019-11-11 2024-11-22 삼성디스플레이 주식회사 레이저 조사 장치 및 레이저 조사 방법
JP6967179B2 (ja) * 2019-11-20 2021-11-17 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
JP7578403B2 (ja) * 2020-03-02 2024-11-06 株式会社東京精密 シリコンウエハの表面改質方法
KR20210111078A (ko) 2020-03-02 2021-09-10 에이디알씨 주식회사 결정화된 반도체를 포함하는 박막 트랜지스터 및 이를 포함하는 표시 장치, 그리고 그 제조 방법 및 반도체 결정화 방법
CN116372360B (zh) * 2023-02-21 2024-01-12 中国工程物理研究院激光聚变研究中心 一种微孔旋切扫描加工光学系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650521A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Annealing device for semiconductor wafer using laser beam
JPH0795538B2 (ja) * 1986-05-02 1995-10-11 旭硝子株式会社 レ−ザ−アニ−ル装置
JP3949564B2 (ja) * 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法

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JP2003243321A (ja) 2003-08-29

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