JPS5650521A - Annealing device for semiconductor wafer using laser beam - Google Patents

Annealing device for semiconductor wafer using laser beam

Info

Publication number
JPS5650521A
JPS5650521A JP12753679A JP12753679A JPS5650521A JP S5650521 A JPS5650521 A JP S5650521A JP 12753679 A JP12753679 A JP 12753679A JP 12753679 A JP12753679 A JP 12753679A JP S5650521 A JPS5650521 A JP S5650521A
Authority
JP
Japan
Prior art keywords
laser beam
annealing device
irradiated
semiconductor wafer
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12753679A
Other languages
Japanese (ja)
Inventor
Hirotomo Ooga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12753679A priority Critical patent/JPS5650521A/en
Publication of JPS5650521A publication Critical patent/JPS5650521A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent heating of a sample-stand and to increase accuracy in dimensions by a method wherein a collimate lens and an aperture on an annealing device in which reflection and scanning by a movable mirror is utilized and a section to be irradiated limited. CONSTITUTION:In a laser annealing device with which reflection and scanning are performed by irradiating a laser beam coming from a laser 1 on a movable mirror through a beam-condensing lens 3, the laser beam is irradiated only to a semiconductor wafer 6 by providing an aperture member 12 having a collimate lens and a controlling hole 12a. Hereby, as no laser beam is irradiated to a sample-stand 5, the decrease in dimensional accuracy arising from heating cen be prevented.
JP12753679A 1979-10-01 1979-10-01 Annealing device for semiconductor wafer using laser beam Pending JPS5650521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12753679A JPS5650521A (en) 1979-10-01 1979-10-01 Annealing device for semiconductor wafer using laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12753679A JPS5650521A (en) 1979-10-01 1979-10-01 Annealing device for semiconductor wafer using laser beam

Publications (1)

Publication Number Publication Date
JPS5650521A true JPS5650521A (en) 1981-05-07

Family

ID=14962434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12753679A Pending JPS5650521A (en) 1979-10-01 1979-10-01 Annealing device for semiconductor wafer using laser beam

Country Status (1)

Country Link
JP (1) JPS5650521A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123720A (en) * 1982-01-18 1983-07-23 Fujitsu Ltd Electron beam annealing apparatus
JPH01146320A (en) * 1987-12-02 1989-06-08 Tokyo Electron Ltd Laser heat treatment device
JP2003243321A (en) * 2001-11-30 2003-08-29 Semiconductor Energy Lab Co Ltd Laser beam irradiating device
JP2010028128A (en) * 2001-11-30 2010-02-04 Semiconductor Energy Lab Co Ltd Method of fablicating emiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123720A (en) * 1982-01-18 1983-07-23 Fujitsu Ltd Electron beam annealing apparatus
JPH01146320A (en) * 1987-12-02 1989-06-08 Tokyo Electron Ltd Laser heat treatment device
JP2003243321A (en) * 2001-11-30 2003-08-29 Semiconductor Energy Lab Co Ltd Laser beam irradiating device
JP2010028128A (en) * 2001-11-30 2010-02-04 Semiconductor Energy Lab Co Ltd Method of fablicating emiconductor device
JP4549620B2 (en) * 2001-11-30 2010-09-22 株式会社半導体エネルギー研究所 Laser irradiation device

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