JPS58123720A - Electron beam annealing apparatus - Google Patents
Electron beam annealing apparatusInfo
- Publication number
- JPS58123720A JPS58123720A JP570682A JP570682A JPS58123720A JP S58123720 A JPS58123720 A JP S58123720A JP 570682 A JP570682 A JP 570682A JP 570682 A JP570682 A JP 570682A JP S58123720 A JPS58123720 A JP S58123720A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- wafer
- specimen
- section
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
【発明の詳細な説明】
（り発明の技術分野
不発’３１ｍは半導体ウェハー表向に電子ビームを照射
してアニールする電子ビームアニール装置に係る。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an electron beam annealing apparatus for annealing the surface of a semiconductor wafer by irradiating the surface with an electron beam.
（２） 技術の背型
半導体装置の製造工程において、イオン注入層の活性化
や多結晶シリプンの単結晶化等にレーダーピー人や電子
ビームを照射してアニールする方法が広く研究されてい
るり
電子ピームアニールハ、レーサーアニールに比べてビー
ムを横様的ではなくｔｉ元に１９光学的に走査すること
ができ、そのビームサイズや強さも容易に変化させるこ
とができ、かつビームのエネルギーを大きくすることが
できる点で優れている。(2) In the manufacturing process of back-type semiconductor devices, methods of annealing by irradiating radar beams or electron beams to activate ion-implanted layers or turn polycrystalline silicon into single crystals have been widely studied. Compared to laser annealing, beam annealing allows the beam to be scanned optically in a 19 direction rather than horizontally, and the beam size and intensity can be easily changed, and the energy of the beam can be increased. Excellent in what it can do.
（３）従来技術と問題点
上記したように電子ビームアニールでは、ビームのエネ
ルギーがレーザーに比べて大であるため、アニールに関
しては好都合であるが、ウェハー等の試料１＆を載置す
るホルダー等に電子ビームが照射されるとホルダーが溶
けてしまい、その点では不都合である。(3) Prior art and problems As mentioned above, in electron beam annealing, the energy of the beam is higher than that of a laser, so it is convenient for annealing, but When irradiated with an electron beam, the holder melts, which is inconvenient.
このホルダーの載置部をＴａ ＝ Ｗ等の高一点金属を
利用して電子ビームに耐え得るようにすることも考えら
れるが、そのような高融点金輌は非常に高価で実用的で
ない。It is conceivable to use a high single point metal such as Ta = W for the mounting portion of this holder so that it can withstand the electron beam, but such a high melting point metal is extremely expensive and impractical.
（４）発明の目的
本発明は、安価な試料台でも電子ビームの照射を防ぐこ
とにより、試料台力１溶融されることがないようにし之
電子ビームアニール装置を供給することにある。(4) Purpose of the Invention The present invention provides an electron beam annealing apparatus that prevents even an inexpensive sample stand from being irradiated with an electron beam, thereby preventing the sample stand from being melted.
（５）発明の構成
本発明は、電子ビーム発生部と、該電子ビームを一同す
る一同部と、該電子ビームが照射される試料板が載置さ
れる試料台と、該試料台ｆｔｗＡ動する駆動部とを具備
する電子ビームアニール装置において、
該電子ビームに対する反射係数が該試料板と異なる材料
で形成された該試料台の載置部と、該電子ビームの反射
ビームを検知する検知部と、該検知部の情報を該電子ビ
ーム発生部及び駆動部に供給する供給手段とを具備し、
咳電子ビームを該試料板にのみ照射するＬうにしたこと
ｊｋ特黴とする〇
（６）発明の実施例
本発明の実施例を図面に従って詳細に説明するＯ
図面は本実施例の電子ビームアニール装置の概略図であ
る。ｌは電子ビーム発生部で、そこから発生したビーム
は集束レンズＳにょプマスク板８のアパーチャを照射し
、アパーチャにより規定される大きさのビームが投影レ
ンズ会により８ｉクエハー等の試料＄５に投影される０
６は１１１１向部で、電子ビームをある朝四に たって
１向させることで、試料飯器表面を走査させている。試
料板ｉは試料台７上に載置され、試料台は駆動部８によ
り二次元方向く移動する〇
本実施例では試料台７はＡｊ等で形成され、ウェハー５
が直接載置される部分９にはＷ、υａ等、高融点金属が
使用されている。そして−内部６の近傍に反射ビーム１
ｌ１１に検知する検知部ｉｏが設けられている。この検
知部１０は例えば受光ダイオード等００・・・：、、反
射？−ｍｌ”０強度を電気信号Ｉ／ｃｆ換するものであ
る。そして、この情報は供給手段１１ｉ１９１１子ビ一
ム発生部ｌ、駆動部８に与えられる。(5) Structure of the Invention The present invention comprises an electron beam generating section, a section for generating the electron beam, a sample stage on which a sample plate to be irradiated with the electron beam is placed, and a movement of the sample plate ftwA. an electron beam annealing apparatus comprising: a mounting part for the sample stage formed of a material having a reflection coefficient for the electron beam different from that of the sample plate; and a detection part for detecting a reflected beam of the electron beam; , a supply means for supplying information from the detection section to the electron beam generation section and the drive section, so that the cough electron beam is irradiated only to the sample plate.〇(6) Invention Embodiment An embodiment of the present invention will be described in detail with reference to the drawings. The drawing is a schematic diagram of an electron beam annealing apparatus according to the embodiment. 1 is an electron beam generation part, and the beam generated from there irradiates the aperture of the mask plate 8 with a focusing lens S, and a beam of a size defined by the aperture is projected onto a sample 5 such as an 8i wafer by a projection lens. 0 to be done
6 is the 1111-direction section, and the surface of the sample container is scanned by directing the electron beam in one direction one morning. The sample plate i is placed on the sample stage 7, and the sample stage is moved in two-dimensional directions by the drive unit 8. In this embodiment, the sample stage 7 is formed of Aj, etc., and the wafer 5
A high melting point metal such as W or υa is used for the portion 9 on which is directly placed. and - reflected beam 1 in the vicinity of interior 6
A detection unit io for detection is provided at l11. This detection unit 10 is, for example, a light receiving diode, etc.00...:,,Reflection? -ml"0 intensity is converted into an electric signal I/cf. This information is then given to the supply means 11i 1911, the child beam generating section 1, and the driving section 8.
本実施例では、−内部６による走置ではある狭い領域に
限られるため、躯一部８により試料台７を移動し、ある
狭い領域、例えばｌ ｆツブ分を一同ｓ６によシ走蒼し
％更に駆動部８により移動する乏いった動作をくり返す
。そしてウェハー６の趨部とウェハーｂの外部を含む狭
い領域にな）たとき、照射される唯子ビームの反射ビー
ム１ｍの強度がシリコンウェハーｂとＷ・Ｔａ等の金ｍ
ｄ７Ｘｔ部９とで異なることを検知ｓｌＯが検知し、そ
の情報に基づいて発生部ｌでは電子ビームの発生を停止
し、駆動ＷＡ８では、試料台７をウェハーｂにのみ電子
ビームが照射される位置に移動させる。In this embodiment, since the movement by the internal part 6 is limited to a certain narrow area, the sample stage 7 is moved by the body part 8, and a certain narrow area, for example, the l f part, is moved all by s6. %, the operation of moving by the drive unit 8 is repeated. When the wafer 6 reaches a narrow area including the edge of the wafer 6 and the outside of the wafer b, the intensity of the reflected beam 1 m of the irradiated onlyon beam is the same as that of the silicon wafer b and the gold m such as W and Ta.
The detection slO detects that there is a difference between the d7 and the move it to
従って本発明ではウェハー５のみ（実際にはウェハーｉ
の外部にも少しだけ）曹子ビームが照射される。Therefore, in the present invention, only wafer 5 (actually wafer i
A small portion of the outside of the building is also irradiated with the Sozi beam.
（７１発明の詳細
な説明した工うに本発明に工れば、照射される電子ビー
ムの反射ビームを検知することでクエハー尋の賦１＃＋
＆ｓの位１１を１誠し、ウェハー器以外には電子ビーム
か照射されない工うにしている０従って試料台を尚価な
材料で形成する必要がなく、シかも試料板ｉの大きさ等
が種々変っても自動的に検知することができ、作業性が
向上する◎(According to the detailed explanation of the 71 invention, if the present invention is implemented, the reflected beam of the irradiated electron beam can be detected, and the
The 11th place of &s is set to 1, so that nothing other than the wafer device is irradiated with the electron beam.Therefore, there is no need to form the sample stage with expensive materials, and the size of the sample plate i can be adjusted. Various changes can be automatically detected, improving work efficiency◎
図面は本発明の一実施例である電子ビームアニール装置
である。
図中、ｌは電子ビーム発生部、ｉは試料Ｊ１１％ ６は
（−内部、７は試料台、８は駆動部、９は載置Ｓ。
ｌＯは検知部、１１は供給部。The drawing shows an electron beam annealing apparatus which is an embodiment of the present invention. In the figure, l is the electron beam generation part, i is the sample J11%, 6 is (-inside, 7 is the sample stage, 8 is the drive part, 9 is the mounting S. IO is the detection part, and 11 is the supply part.
Claims (1)
該電子ビームが照射される試料板が載置される試料台と
、該試料台を駆動する駆動部とを具備する電子ビームア
ニール装置において、該電子ビームに対する反射係数か
ａ試料板と異なる材料で形成され友該ｌＫ科台の載置部
と、該電子ビームの反射ビームを検知する検知部と。 該検知部の情報を該電子ビーム発生部及び駆動部に供給
する供給手段とを具備し、該電子ビームを該試料板にの
み照射するようにしたことを特徴とする電子ビームアニ
ール装置。[Claims] An electron beam generating section, a direction section for directing the electron beam in one direction,
In an electron beam annealing apparatus that includes a sample stage on which a sample plate to be irradiated with the electron beam is placed and a drive unit that drives the sample plate, the reflection coefficient for the electron beam is made of a material different from that of the sample plate. A mounting section for the electron beam to be formed, and a detection section for detecting the reflected beam of the electron beam. An electron beam annealing apparatus comprising: supply means for supplying information from the detection section to the electron beam generation section and the drive section, and irradiates only the sample plate with the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP570682A JPS58123720A (en) | 1982-01-18 | 1982-01-18 | Electron beam annealing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP570682A JPS58123720A (en) | 1982-01-18 | 1982-01-18 | Electron beam annealing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58123720A true JPS58123720A (en) | 1983-07-23 |
Family
ID=11618551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP570682A Pending JPS58123720A (en) | 1982-01-18 | 1982-01-18 | Electron beam annealing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58123720A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169725A (en) * | 1987-01-07 | 1988-07-13 | Agency Of Ind Science & Technol | Mark structure for laser beam and intensity distribution measuring and mark-position sensing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5650521A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Annealing device for semiconductor wafer using laser beam |
-
1982
- 1982-01-18 JP JP570682A patent/JPS58123720A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5650521A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Annealing device for semiconductor wafer using laser beam |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169725A (en) * | 1987-01-07 | 1988-07-13 | Agency Of Ind Science & Technol | Mark structure for laser beam and intensity distribution measuring and mark-position sensing method |
| JP2667977B2 (en) * | 1987-01-07 | 1997-10-27 | 工業技術院長 | Laser beam intensity distribution measurement method |
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