JP4549019B2 - 複製された回折格子のための保護膜 - Google Patents
複製された回折格子のための保護膜 Download PDFInfo
- Publication number
- JP4549019B2 JP4549019B2 JP2002547276A JP2002547276A JP4549019B2 JP 4549019 B2 JP4549019 B2 JP 4549019B2 JP 2002547276 A JP2002547276 A JP 2002547276A JP 2002547276 A JP2002547276 A JP 2002547276A JP 4549019 B2 JP4549019 B2 JP 4549019B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- coating
- aluminum
- mgf
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000001681 protective effect Effects 0.000 title 1
- 238000000576 coating method Methods 0.000 claims description 99
- 239000011248 coating agent Substances 0.000 claims description 88
- 239000010410 layer Substances 0.000 claims description 73
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 68
- 229910052782 aluminium Inorganic materials 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 11
- 230000010363 phase shift Effects 0.000 claims description 9
- 239000011247 coating layer Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 9
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 46
- 238000002310 reflectometry Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052681 coesite Inorganic materials 0.000 description 19
- 229910052906 cristobalite Inorganic materials 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 19
- 229910052682 stishovite Inorganic materials 0.000 description 19
- 229910052905 tridymite Inorganic materials 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000006731 degradation reaction Methods 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- 230000010076 replication Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011253 protective coating Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- GUVLYNGULCJVDO-UHFFFAOYSA-N EPTC Chemical compound CCCN(CCC)C(=O)SCC GUVLYNGULCJVDO-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- RAOWWWKNDVOQDP-UHFFFAOYSA-N copper;propane-1,2,3-triol Chemical compound [Cu].OCC(O)CO RAOWWWKNDVOQDP-UHFFFAOYSA-N 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- G02B1/105—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Optical Elements Other Than Lenses (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Lasers (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/731,938 US6529321B2 (en) | 1997-09-29 | 2000-12-07 | Protective overcoat for replicated diffraction gratings |
| US09/910,362 US6511703B2 (en) | 1997-09-29 | 2001-07-20 | Protective overcoat for replicated diffraction gratings |
| PCT/US2001/046667 WO2002045475A2 (en) | 2000-12-07 | 2001-11-07 | Protective overcoat for replicated diffraction gratings |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004514794A JP2004514794A (ja) | 2004-05-20 |
| JP2004514794A5 JP2004514794A5 (zh) | 2005-12-22 |
| JP4549019B2 true JP4549019B2 (ja) | 2010-09-22 |
Family
ID=27112329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002547276A Expired - Lifetime JP4549019B2 (ja) | 2000-12-07 | 2001-11-07 | 複製された回折格子のための保護膜 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6511703B2 (zh) |
| EP (1) | EP1340106B1 (zh) |
| JP (1) | JP4549019B2 (zh) |
| AU (1) | AU2002239525A1 (zh) |
| DE (1) | DE60132355T2 (zh) |
| TW (1) | TW548336B (zh) |
| WO (1) | WO2002045475A2 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2579072A2 (en) | 2011-10-06 | 2013-04-10 | Canon Kabushiki Kaisha | Echelle diffraction grating and its manufacturing method, excimer laser and its manufacturing method |
| EP2919047A1 (en) | 2014-03-10 | 2015-09-16 | Canon Kabushiki Kaisha | Diffraction grating of the reflective-type |
| EP2919046A1 (en) | 2014-03-10 | 2015-09-16 | Canon Kabushiki Kaisha | Diffraction grating of the reflective-type |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7346093B2 (en) * | 2000-11-17 | 2008-03-18 | Cymer, Inc. | DUV light source optical element improvements |
| DE10200293B4 (de) * | 2002-01-07 | 2007-12-20 | Carl Zeiss Laser Optics Gmbh | Optische Anordnung sowie Verfahren zur Herstellung einer solchen |
| US20050008789A1 (en) * | 2003-06-26 | 2005-01-13 | Rafac Robert J. | Method and apparatus for stabilizing optical dielectric coatings |
| DE10350114B4 (de) * | 2003-10-28 | 2006-01-12 | Tuilaser Ag | Optisches Element sowie Excimerlaser mit optischem Element |
| EP1645893A1 (de) * | 2004-10-08 | 2006-04-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beugungsgitter für elektromagnetische Strahlung sowie Verfahren zur Herstellung |
| JP2006178312A (ja) * | 2004-12-24 | 2006-07-06 | Canon Inc | 表面反射型位相格子 |
| US7561611B2 (en) * | 2005-02-03 | 2009-07-14 | Corning Incorporated | Extended-lifetime elements for excimer lasers |
| JP4652122B2 (ja) * | 2005-05-18 | 2011-03-16 | 株式会社日立製作所 | 投射型映像表示装置、それに用いる光学部材及び光学ユニット |
| DE102007032371A1 (de) * | 2007-07-06 | 2009-01-15 | Carl Zeiss Laser Optics Gmbh | Verfahren zum Beschichten eines optischen Bauelements für eine Laseranordnung |
| US8391459B2 (en) * | 2007-07-20 | 2013-03-05 | At&T Intellectual Property I, Lp | System for managing scheduling conflicts |
| JP5303889B2 (ja) * | 2007-10-03 | 2013-10-02 | 株式会社島津製作所 | レプリカ回折格子 |
| FR2945159B1 (fr) * | 2009-04-29 | 2016-04-01 | Horiba Jobin Yvon Sas | Reseau de diffraction metallique en reflexion a haute tenue au flux en regime femtoseconde, systeme comprenant un tel reseau et procede d'amelioration du seuil d'endommagement d'un reseau de diffraction metallique |
| US9366791B2 (en) * | 2011-02-21 | 2016-06-14 | Canon Kabushiki Kaisha | Diffractive optical element and manufacturing method for the same |
| DE102011015141A1 (de) * | 2011-03-16 | 2012-09-20 | Carl Zeiss Laser Optics Gmbh | Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement |
| JP6153305B2 (ja) * | 2011-10-06 | 2017-06-28 | キヤノン株式会社 | エシェル型回折格子の製造方法 |
| DE102011054837A1 (de) | 2011-10-26 | 2013-05-02 | Carl Zeiss Laser Optics Gmbh | Optisches Element |
| JP5850710B2 (ja) * | 2011-11-07 | 2016-02-03 | キヤノン株式会社 | エンコーダ用反射型光学式スケール及び反射型光学式エンコーダ |
| JP6534398B2 (ja) * | 2014-12-18 | 2019-06-26 | ギガフォトン株式会社 | グレーティング、グレーティングの製造方法及びグレーティングの再生方法 |
| US10690831B2 (en) * | 2018-11-20 | 2020-06-23 | Facebook Technologies, Llc | Anisotropically formed diffraction grating device |
| DE102020118733B4 (de) | 2020-07-15 | 2022-11-24 | Ev Group E. Thallner Gmbh | Verfahren zur Aufbringung eines Schutzschichtmaterials |
| CN115201953B (zh) * | 2022-08-22 | 2023-01-20 | 之江实验室 | 一种双工作波段高衍射效率复合反射光栅 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4437958A (en) * | 1978-01-11 | 1984-03-20 | The United States Of America As Represented By The United States Department Of Energy | Device and method for separating oxygen isotopes |
| DE3852296T2 (de) * | 1988-03-18 | 1995-04-13 | Instruments Sa | Beugungsgitter und Herstellungsverfahren dafür. |
| JPH04211202A (ja) * | 1990-03-19 | 1992-08-03 | Canon Inc | 反射型回折格子および該回折格子を用いた装置 |
| EP0508478B1 (en) * | 1991-04-12 | 1996-07-03 | Nissin Electric Company, Limited | Process for forming metal film, and aluminium film coated matter |
| JP3342042B2 (ja) * | 1992-04-16 | 2002-11-05 | キヤノン株式会社 | 反射型色分解回折格子 |
| JP3307031B2 (ja) * | 1993-11-18 | 2002-07-24 | 株式会社島津製作所 | レプリカ回折格子 |
| JPH07239407A (ja) * | 1994-02-28 | 1995-09-12 | Shimadzu Corp | レプリカ回折格子 |
| JPH0815514A (ja) * | 1994-06-24 | 1996-01-19 | Canon Inc | 反射型回折格子 |
| EP0953161B1 (en) * | 1997-01-17 | 2004-11-17 | Cymer, Inc. | Reflective overcoat for replicated diffraction gratings |
| US6162495A (en) * | 1997-09-29 | 2000-12-19 | Cymer, Inc. | Protective overcoat for replicated diffraction gratings |
-
2001
- 2001-07-20 US US09/910,362 patent/US6511703B2/en not_active Expired - Lifetime
- 2001-11-07 WO PCT/US2001/046667 patent/WO2002045475A2/en active IP Right Grant
- 2001-11-07 JP JP2002547276A patent/JP4549019B2/ja not_active Expired - Lifetime
- 2001-11-07 AU AU2002239525A patent/AU2002239525A1/en not_active Abandoned
- 2001-11-07 DE DE60132355T patent/DE60132355T2/de not_active Expired - Lifetime
- 2001-11-07 EP EP01987291A patent/EP1340106B1/en not_active Expired - Lifetime
- 2001-11-20 TW TW090128709A patent/TW548336B/zh not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2579072A2 (en) | 2011-10-06 | 2013-04-10 | Canon Kabushiki Kaisha | Echelle diffraction grating and its manufacturing method, excimer laser and its manufacturing method |
| JP2013092754A (ja) * | 2011-10-06 | 2013-05-16 | Canon Inc | エシェル型回折格子およびその製造方法、エキシマレーザおよびその製造方法 |
| US9031112B2 (en) | 2011-10-06 | 2015-05-12 | Canon Kabushiki Kaisha | Echelle diffraction grating and its manufacturing method, excimer laser and its manufacturing method |
| EP2919047A1 (en) | 2014-03-10 | 2015-09-16 | Canon Kabushiki Kaisha | Diffraction grating of the reflective-type |
| EP2919046A1 (en) | 2014-03-10 | 2015-09-16 | Canon Kabushiki Kaisha | Diffraction grating of the reflective-type |
| US9583910B2 (en) | 2014-03-10 | 2017-02-28 | Canon Kabushiki Kaisha | Diffraction grating, laser apparatus, and manufacturing method for diffraction grating |
Also Published As
| Publication number | Publication date |
|---|---|
| US20020001672A1 (en) | 2002-01-03 |
| DE60132355D1 (de) | 2008-02-21 |
| EP1340106B1 (en) | 2008-01-09 |
| WO2002045475A3 (en) | 2002-10-10 |
| TW548336B (en) | 2003-08-21 |
| EP1340106A4 (en) | 2006-07-05 |
| WO2002045475A2 (en) | 2002-06-13 |
| JP2004514794A (ja) | 2004-05-20 |
| EP1340106A2 (en) | 2003-09-03 |
| DE60132355T2 (de) | 2008-05-08 |
| US6511703B2 (en) | 2003-01-28 |
| AU2002239525A1 (en) | 2002-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4549019B2 (ja) | 複製された回折格子のための保護膜 | |
| US6529321B2 (en) | Protective overcoat for replicated diffraction gratings | |
| US6780496B2 (en) | Optimized capping layers for EUV multilayers | |
| JP4390683B2 (ja) | 光学素子、このような光学素子を備えたリソグラフィ装置及びデバイス製造方法 | |
| JP2005505930A (ja) | 光学要素及びその製造方法、並びにリソグラフィー装置及び半導体装置の製造方法 | |
| JP4905914B2 (ja) | 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク | |
| JP6731415B2 (ja) | Ｅｕｖ多層ミラー、多層ミラーを含む光学系及び多層ミラーを製造する方法 | |
| US20230176468A1 (en) | Extreme ultraviolet mask absorber materials | |
| JP7478842B2 (ja) | 極端紫外線マスク吸収体材料 | |
| JP2007109971A (ja) | 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク | |
| JP2005516182A (ja) | 不動態化保護膜二重層 | |
| JP2007109968A (ja) | 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク | |
| JP4998082B2 (ja) | 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法 | |
| JPH07333829A (ja) | 光学素子およびその製造方法 | |
| JP2004334177A (ja) | 極紫外線中で操作する機械的安定性を強化した光学デバイスおよびその様なデバイスを含んでなる平版マスク | |
| JP5642914B2 (ja) | 耐久性を向上させたエキシマレーザ用素子 | |
| JPH0336402B2 (zh) | ||
| US11513437B2 (en) | Extreme ultraviolet mask absorber materials | |
| KR20230038249A (ko) | 극자외선 마스크 흡수체 재료들 | |
| JP2006228840A (ja) | 軟ｘ線光学素子及び軟ｘ線光学機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040826 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040826 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070723 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071015 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080115 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080122 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080415 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090323 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090623 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090630 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090924 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100225 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100525 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100617 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100706 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4549019 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130716 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |