JP4546032B2 - プラズマ処理装置及び方法 - Google Patents

プラズマ処理装置及び方法 Download PDF

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Publication number
JP4546032B2
JP4546032B2 JP2003033393A JP2003033393A JP4546032B2 JP 4546032 B2 JP4546032 B2 JP 4546032B2 JP 2003033393 A JP2003033393 A JP 2003033393A JP 2003033393 A JP2003033393 A JP 2003033393A JP 4546032 B2 JP4546032 B2 JP 4546032B2
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Japan
Prior art keywords
plasma
discharge space
plasma processing
processed
electrode
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Expired - Fee Related
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JP2003033393A
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English (en)
Japanese (ja)
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JP2003347284A (ja
JP2003347284A5 (enExample
Inventor
陽一郎 矢代
智洋 奥村
忠司 木村
光央 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2003033393A priority Critical patent/JP4546032B2/ja
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Publication of JP2003347284A5 publication Critical patent/JP2003347284A5/ja
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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2003033393A 2002-03-19 2003-02-12 プラズマ処理装置及び方法 Expired - Fee Related JP4546032B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003033393A JP4546032B2 (ja) 2002-03-19 2003-02-12 プラズマ処理装置及び方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-76816 2002-03-19
JP2002076816 2002-03-19
JP2003033393A JP4546032B2 (ja) 2002-03-19 2003-02-12 プラズマ処理装置及び方法

Publications (3)

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JP2003347284A JP2003347284A (ja) 2003-12-05
JP2003347284A5 JP2003347284A5 (enExample) 2006-03-30
JP4546032B2 true JP4546032B2 (ja) 2010-09-15

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JP2003033393A Expired - Fee Related JP4546032B2 (ja) 2002-03-19 2003-02-12 プラズマ処理装置及び方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101069333B1 (ko) 2003-02-05 2011-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치의 제조방법
WO2004070810A1 (ja) 2003-02-05 2004-08-19 Semiconductor Energy Laboratory Co., Ltd. 表示装置の製造方法
WO2004070820A1 (ja) 2003-02-05 2004-08-19 Semiconductor Energy Laboratory Co., Ltd. 配線の作製方法
KR101032338B1 (ko) 2003-02-06 2011-05-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치의 제작방법
KR101193015B1 (ko) 2003-02-06 2012-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 플라즈마 장치
JP4593287B2 (ja) * 2003-02-06 2010-12-08 株式会社半導体エネルギー研究所 半導体製造装置
CN100568457C (zh) 2003-10-02 2009-12-09 株式会社半导体能源研究所 半导体装置的制造方法
US20050170643A1 (en) 2004-01-29 2005-08-04 Semiconductor Energy Laboratory Co., Ltd. Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device
US7416977B2 (en) 2004-04-28 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device, liquid crystal television, and EL television
EP1910246B1 (en) * 2005-08-02 2011-11-02 MOGILEVSKY, Radion Method for producing dense blocks
US8482206B2 (en) * 2007-10-16 2013-07-09 Centre National De La Recherche Scientifique (Cnrs) Transient plasma ball generation system at long distance
JP5276388B2 (ja) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211492A (ja) * 1994-01-18 1995-08-11 Semiconductor Energy Lab Co Ltd プラズマ処理方法及びプラズマ処理装置
JP3972393B2 (ja) * 1995-12-19 2007-09-05 セイコーエプソン株式会社 表面処理方法及び装置、圧電素子の製造方法、インクジェット用プリントヘッドの製造方法、液晶パネルの製造方法、並びにマイクロサンプリング方法
JP3695184B2 (ja) * 1998-12-03 2005-09-14 松下電器産業株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP2002057440A (ja) * 2000-06-02 2002-02-22 Sekisui Chem Co Ltd 放電プラズマ処理方法及びその装置
JP2002008894A (ja) * 2000-06-27 2002-01-11 Matsushita Electric Works Ltd プラズマ処理装置及びプラズマ点灯方法
JP4154838B2 (ja) * 2000-07-26 2008-09-24 松下電工株式会社 プラズマ処理方法

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