JP4526949B2 - 赤外検出器用読出し回路 - Google Patents
赤外検出器用読出し回路 Download PDFInfo
- Publication number
- JP4526949B2 JP4526949B2 JP2004548946A JP2004548946A JP4526949B2 JP 4526949 B2 JP4526949 B2 JP 4526949B2 JP 2004548946 A JP2004548946 A JP 2004548946A JP 2004548946 A JP2004548946 A JP 2004548946A JP 4526949 B2 JP4526949 B2 JP 4526949B2
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- Prior art keywords
- input
- switch
- output
- capacitor
- amplifier
- Prior art date
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- Expired - Lifetime
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- 239000003990 capacitor Substances 0.000 claims description 52
- 238000001514 detection method Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 238000012937 correction Methods 0.000 description 20
- 230000010354 integration Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
- H03F3/45968—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction
- H03F3/45973—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using a feedback circuit
- H03F3/45977—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using a feedback circuit using switching means, e.g. sample and hold
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/261—Amplifier which being suitable for instrumentation applications
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
15 回路
102 赤外検出器ダイオード
102 検出電流
104 仮想接地電圧源
105 スイッチ
106 積分コンデンサ
107 主増幅器
110 訂正増幅器
111,113 スイッチ
112,114 コンデンサ
121,122,123,124 入力
125 出力
Claims (6)
- 第1の入力(121)と第2の入力(122)と出力(125)を有する主演算増幅器(107)、及び前記第2の入力と前記出力との間に接続された積分コンデンサ(106)を含む容量性帰還トランスインピーダンス演算増幅器(11)と、前記積分コンデンサ(106)と並列に接続された第1のスイッチ(105)とを備えた装置であって、更に、第3の入力(123)と第4の入力(124)を有するオートゼロ演算増幅器(110)を備え、前記第3の入力(123)と前記第1の入力(121)に対して仮想接地電位の信号が入力され、前記第4の入力(124)は、2つのオフセットエラーコンデンサ(112,114)、第2のスイッチ(111)、及び第3のスイッチ(113)を含む回路(15)により前記出力(125)に接続されており、
前記2つのスイッチ(111,113)は、前記第4の入力(124)と前記出力(125)との間に直列に接続されたMOSスイッチであり、
前記2つのオフセットエラーコンデンサ(112,114)の一端子が仮想接地電位に接続され、
前記オフセットエラーコンデンサ(112,114)のうちの一方のコンデンサ(112)の他の端子と前記出力(125)とが、前記第2のスイッチ(111)に接続され、
前記オフセットエラーコンデンサ(112,114)のうちの他方のコンデンサ(114)の他の端子と前記第4の入力(124)とが第3のスイッチ(113)に接続されていることを特徴とする装置。 - 前記オートゼロ演算増幅器(110)は、2つの差動入力MOSトランジスタを備え、前記各トランジスタのゲートは、前記第3、第4の入力(123,124)にそれぞれ接続され、
抵抗器が接続されたMOSトランジスタ(508,509)が、前記差動入力MOSトランジスタのそれぞれに直列に接続されていることを特徴とする請求項1記載の装置。 - 前記第2のスイッチ(111)と前記第3のスイッチ(113)は、前記スイッチ(111,113)の両面への電荷注入を最小化するように設けられた各々4つのトランジスタ(601,602,603,604)を備えることを特徴とする請求項1記載の装置。
- 前記積分コンデンサ(106)は複数のコンデンサを並列に備え、各並列の分岐には分離スイッチが該分岐内の前記コンデンサの両側に設けられたことを特徴とする請求項1記載の装置。
- 前記出力(125)は更にサンプルホールド回路に接続されたことを特徴とする請求項1記載の装置。
- 前記請求項1〜5のいずれか1項に記載の装置を複数個備えたことを特徴とする赤外検出用読出し回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42503602P | 2002-11-07 | 2002-11-07 | |
PCT/BE2003/000187 WO2004043062A1 (en) | 2002-11-07 | 2003-11-06 | Read-out circuit for infrared detectors. |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006505975A JP2006505975A (ja) | 2006-02-16 |
JP2006505975A5 JP2006505975A5 (ja) | 2010-05-27 |
JP4526949B2 true JP4526949B2 (ja) | 2010-08-18 |
Family
ID=32312919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004548946A Expired - Lifetime JP4526949B2 (ja) | 2002-11-07 | 2003-11-06 | 赤外検出器用読出し回路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7148727B2 (ja) |
EP (1) | EP1561339B1 (ja) |
JP (1) | JP4526949B2 (ja) |
CN (1) | CN100525400C (ja) |
AU (1) | AU2003283134A1 (ja) |
CA (1) | CA2502467C (ja) |
WO (1) | WO2004043062A1 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100656666B1 (ko) * | 2004-09-08 | 2006-12-11 | 매그나칩 반도체 유한회사 | 이미지 센서 |
US7268607B2 (en) * | 2004-12-10 | 2007-09-11 | L-3 Communications Corporation | Integrating capacitance circuitry for an integrating amplifier and related method |
JP2006222495A (ja) * | 2005-02-08 | 2006-08-24 | Olympus Corp | 光電流検出回路 |
JP2006279377A (ja) | 2005-03-29 | 2006-10-12 | Handotai Rikougaku Kenkyu Center:Kk | チョッパ増幅回路 |
US7486115B2 (en) * | 2005-07-01 | 2009-02-03 | Cambridge Analog Technologies, Inc. | Sampled-data circuits using zero crossing detection |
US8294495B2 (en) | 2005-07-01 | 2012-10-23 | Maxim Integrated Products, Inc. | Constant slope ramp circuits for sampled-data circuits |
US7522086B2 (en) | 2005-12-29 | 2009-04-21 | Cambridge Analog Technologies, Inc. | Reference circuits for sampled-data circuits |
US7504866B2 (en) | 2005-12-29 | 2009-03-17 | Cambridge Analog Technologies, Inc. | Output hold circuits for sample-data circuits |
KR100782304B1 (ko) * | 2006-02-03 | 2007-12-06 | 삼성전자주식회사 | Cds오프셋 보정 기능을 갖는 이미지 센서와이미지센서의 cds 방법 |
US7411460B2 (en) * | 2006-03-10 | 2008-08-12 | Exar Corporation | Elimination of dummy detector on optical detectors using input common mode feedback |
JP5292689B2 (ja) * | 2006-10-31 | 2013-09-18 | 日本電気株式会社 | 熱型赤外線撮像装置及びその動作方法 |
US7525472B2 (en) * | 2006-12-27 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Integration type and converter and device including same |
CN100510661C (zh) * | 2007-02-14 | 2009-07-08 | 中国科学院安徽光学精密机械研究所 | 反射式铟镓砷陷阱辐射探测器 |
CN101425098B (zh) * | 2007-10-31 | 2010-08-25 | 中国科学院沈阳自动化研究所 | 红外探测器输出的模拟方法及装置 |
WO2009157964A1 (en) * | 2008-06-26 | 2009-12-30 | Marshall Delph Earle | Techniques for monitoring storm conditions |
GB2470214A (en) | 2009-05-14 | 2010-11-17 | Powervation Ltd | Determining DC-DC converter losses |
JP5296612B2 (ja) * | 2009-06-22 | 2013-09-25 | 浜松ホトニクス株式会社 | 積分回路および光検出装置 |
JP2011004327A (ja) * | 2009-06-22 | 2011-01-06 | Hamamatsu Photonics Kk | 積分回路および光検出装置 |
US8816268B1 (en) * | 2011-04-29 | 2014-08-26 | Bae Systems Information And Electronic Systems Integration Inc. | Input unit cell circuitry for transducer readout |
TWI439046B (zh) * | 2011-08-12 | 2014-05-21 | Richtek Technology Corp | 自動調零放大器及相關的偵測模組 |
US8258864B1 (en) * | 2011-09-21 | 2012-09-04 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Ultra low voltage multi-stage high-speed CMOS comparator with autozeroing |
CN103036511B (zh) * | 2012-12-14 | 2015-06-03 | 电子科技大学 | 红外焦平面阵列探测器读出电路的adc余量放大电路 |
TWI492538B (zh) * | 2013-01-14 | 2015-07-11 | Univ Nat Chi Nan | Switchable reading device |
JP6380882B2 (ja) * | 2013-06-17 | 2018-08-29 | セイコーNpc株式会社 | 信号検出回路 |
GB2524521A (en) * | 2014-03-25 | 2015-09-30 | Voltech Instr Ltd | Apparatus and methods for measuring electrical current |
JP6832649B2 (ja) | 2016-08-17 | 2021-02-24 | ブリルニクス インク | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
US10924701B2 (en) * | 2019-07-18 | 2021-02-16 | Omnivision Technologies, Inc. | Column amplifier reset circuit with comparator |
JP7383500B2 (ja) * | 2020-01-16 | 2023-11-20 | 浜松ホトニクス株式会社 | 固体撮像装置およびアンプアレイ |
CN112738359A (zh) * | 2020-12-30 | 2021-04-30 | 长春长光辰芯光电技术有限公司 | Ctia像素单元 |
FR3123121A1 (fr) | 2021-05-19 | 2022-11-25 | Stmicroelectronics (Grenoble 2) Sas | Capteur de lumiere ambiante |
US11894670B2 (en) * | 2021-09-21 | 2024-02-06 | Raytheon Company | High-energy suppression for infrared imagers or other imaging devices |
US11843355B2 (en) | 2022-02-04 | 2023-12-12 | Raytheon Company | High-energy suppression for capacitor transimpedance amplifier (CTIA)-based imagers or other imaging devices |
CN117939319B (zh) * | 2024-03-22 | 2024-06-04 | 中国科学院云南天文台 | 一种短波红外探测器的优化采样方法及系统 |
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US5043820A (en) * | 1989-03-27 | 1991-08-27 | Hughes Aircraft Company | Focal plane array readout employing one capacitive feedback transimpedance amplifier for each column |
JP3625930B2 (ja) * | 1995-10-26 | 2005-03-02 | 株式会社日立製作所 | 半導体集積回路装置 |
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-
2003
- 2003-11-06 JP JP2004548946A patent/JP4526949B2/ja not_active Expired - Lifetime
- 2003-11-06 CA CA2502467A patent/CA2502467C/en not_active Expired - Lifetime
- 2003-11-06 WO PCT/BE2003/000187 patent/WO2004043062A1/en active Application Filing
- 2003-11-06 EP EP03775001.5A patent/EP1561339B1/en not_active Expired - Lifetime
- 2003-11-06 CN CNB2003801023640A patent/CN100525400C/zh not_active Expired - Lifetime
- 2003-11-06 AU AU2003283134A patent/AU2003283134A1/en not_active Abandoned
-
2005
- 2005-05-03 US US11/120,504 patent/US7148727B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA2502467C (en) | 2012-07-03 |
CA2502467A1 (en) | 2004-05-21 |
CN100525400C (zh) | 2009-08-05 |
EP1561339A1 (en) | 2005-08-10 |
AU2003283134A1 (en) | 2004-06-07 |
JP2006505975A (ja) | 2006-02-16 |
EP1561339B1 (en) | 2015-10-21 |
US7148727B2 (en) | 2006-12-12 |
US20050199813A1 (en) | 2005-09-15 |
CN1708983A (zh) | 2005-12-14 |
WO2004043062A1 (en) | 2004-05-21 |
WO2004043062A8 (en) | 2004-11-04 |
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