JP4520460B2 - セルフクリーニング触媒化学蒸着装置及びそのクリーニング方法 - Google Patents

セルフクリーニング触媒化学蒸着装置及びそのクリーニング方法 Download PDF

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Publication number
JP4520460B2
JP4520460B2 JP2006510810A JP2006510810A JP4520460B2 JP 4520460 B2 JP4520460 B2 JP 4520460B2 JP 2006510810 A JP2006510810 A JP 2006510810A JP 2006510810 A JP2006510810 A JP 2006510810A JP 4520460 B2 JP4520460 B2 JP 4520460B2
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Prior art keywords
gas
cleaning
vapor deposition
chemical vapor
deposition apparatus
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Expired - Lifetime
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JP2006510810A
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Japanese (ja)
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JPWO2005086210A1 (ja
Inventor
牧子 北添
修司 大園
博巳 伊藤
一也 斎藤
伸 浅利
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Exhaust Gas Treatment By Means Of Catalyst (AREA)
JP2006510810A 2004-03-10 2005-03-10 セルフクリーニング触媒化学蒸着装置及びそのクリーニング方法 Expired - Lifetime JP4520460B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004067174 2004-03-10
JP2004067174 2004-03-10
PCT/JP2005/004205 WO2005086210A1 (ja) 2004-03-10 2005-03-10 セルフクリーニング触媒化学蒸着装置及びそのクリーニング方法

Publications (2)

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JPWO2005086210A1 JPWO2005086210A1 (ja) 2008-01-24
JP4520460B2 true JP4520460B2 (ja) 2010-08-04

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JP2006510810A Expired - Lifetime JP4520460B2 (ja) 2004-03-10 2005-03-10 セルフクリーニング触媒化学蒸着装置及びそのクリーニング方法

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US (2) US20070209677A1 (show.php)
JP (1) JP4520460B2 (show.php)
CN (1) CN100530546C (show.php)
TW (1) TW200533780A (show.php)
WO (1) WO2005086210A1 (show.php)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016810B2 (ja) * 2005-11-30 2012-09-05 株式会社アルバック 触媒線化学気相成長装置、この装置を用いた化学気相成長方法及びこの装置のセルフクリーニング方法
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
US7495239B2 (en) * 2005-12-22 2009-02-24 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
JP5586199B2 (ja) * 2009-10-02 2014-09-10 三洋電機株式会社 触媒cvd装置、膜の形成方法及び太陽電池の製造方法
US10606180B2 (en) * 2017-03-08 2020-03-31 Asml Netherlands B.V. EUV cleaning systems and methods thereof for an extreme ultraviolet light source
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
CN114369812A (zh) * 2021-12-15 2022-04-19 北京博纳晶科科技有限公司 一种化学气相沉积设备的清洁方法
CN116924623B (zh) * 2023-08-14 2024-06-11 衡阳凯新特种材料科技有限公司 一种特种材料生产线用污水处理装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4781803A (en) * 1985-02-26 1988-11-01 The Standard Oil Company Electrolytic processes employing platinum based amorphous metal alloy oxygen anodes
US5185074A (en) * 1988-08-15 1993-02-09 Idemitsu Kosan Co., Ltd. Process for producing color filter
US5012868A (en) * 1989-03-14 1991-05-07 Uentech Corporation Corrosion inhibition method and apparatus for downhole electrical heating in mineral fluid wells
JPH05270982A (ja) * 1992-03-27 1993-10-19 Idemitsu Petrochem Co Ltd ダイヤモンド膜の製造方法
US5451754A (en) * 1993-10-27 1995-09-19 Xerox Corporation Corona generating device
US6271498B1 (en) * 1997-06-23 2001-08-07 Nissin Electric Co., Ltd Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus
US6079426A (en) * 1997-07-02 2000-06-27 Applied Materials, Inc. Method and apparatus for determining the endpoint in a plasma cleaning process
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
JP4459329B2 (ja) * 1999-08-05 2010-04-28 キヤノンアネルバ株式会社 付着膜の除去方法及び除去装置
JP2001345280A (ja) * 2000-03-28 2001-12-14 Hideki Matsumura 化学蒸着方法及び化学蒸着装置
US20050109627A1 (en) * 2003-10-10 2005-05-26 Applied Materials, Inc. Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features
JP2002008997A (ja) * 2000-06-23 2002-01-11 Hitachi Kokusai Electric Inc 半導体装置の製造方法及びその装置
EP1258914B1 (en) * 2000-09-14 2006-11-22 Japan as represented by President of Japan Advanced Institute of Science and Technology Heating element cvd device
JP4435395B2 (ja) * 2000-09-14 2010-03-17 キヤノンアネルバ株式会社 発熱体cvd装置
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
JP2002246310A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
US6562201B2 (en) * 2001-06-08 2003-05-13 Applied Semiconductor, Inc. Semiconductive polymeric system, devices incorporating the same, and its use in controlling corrosion
JP3787816B2 (ja) * 2002-10-04 2006-06-21 キヤノンアネルバ株式会社 発熱体cvd装置

Also Published As

Publication number Publication date
US20070209677A1 (en) 2007-09-13
US20120145184A1 (en) 2012-06-14
CN1943014A (zh) 2007-04-04
CN100530546C (zh) 2009-08-19
TW200533780A (en) 2005-10-16
JPWO2005086210A1 (ja) 2008-01-24
TWI374944B (show.php) 2012-10-21
WO2005086210A1 (ja) 2005-09-15

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