TWI374944B - - Google Patents

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Publication number
TWI374944B
TWI374944B TW094107035A TW94107035A TWI374944B TW I374944 B TWI374944 B TW I374944B TW 094107035 A TW094107035 A TW 094107035A TW 94107035 A TW94107035 A TW 94107035A TW I374944 B TWI374944 B TW I374944B
Authority
TW
Taiwan
Prior art keywords
gas
cleaning
medium
vapor deposition
self
Prior art date
Application number
TW094107035A
Other languages
English (en)
Chinese (zh)
Other versions
TW200533780A (en
Inventor
Makiko Kitazoe
Shuuji Oosono
Hiromi Itou
Kazuya Saitou
Shin Asari
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200533780A publication Critical patent/TW200533780A/zh
Application granted granted Critical
Publication of TWI374944B publication Critical patent/TWI374944B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Exhaust Gas Treatment By Means Of Catalyst (AREA)
TW094107035A 2004-03-10 2005-03-08 Self-cleaning catalyst chemical vapor deposition device and cleaning method therefor TW200533780A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004067174 2004-03-10

Publications (2)

Publication Number Publication Date
TW200533780A TW200533780A (en) 2005-10-16
TWI374944B true TWI374944B (show.php) 2012-10-21

Family

ID=34918384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107035A TW200533780A (en) 2004-03-10 2005-03-08 Self-cleaning catalyst chemical vapor deposition device and cleaning method therefor

Country Status (5)

Country Link
US (2) US20070209677A1 (show.php)
JP (1) JP4520460B2 (show.php)
CN (1) CN100530546C (show.php)
TW (1) TW200533780A (show.php)
WO (1) WO2005086210A1 (show.php)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016810B2 (ja) * 2005-11-30 2012-09-05 株式会社アルバック 触媒線化学気相成長装置、この装置を用いた化学気相成長方法及びこの装置のセルフクリーニング方法
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
US7495239B2 (en) * 2005-12-22 2009-02-24 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
JP5586199B2 (ja) * 2009-10-02 2014-09-10 三洋電機株式会社 触媒ｃｖｄ装置、膜の形成方法及び太陽電池の製造方法
US10606180B2 (en) * 2017-03-08 2020-03-31 Asml Netherlands B.V. EUV cleaning systems and methods thereof for an extreme ultraviolet light source
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
CN114369812A (zh) * 2021-12-15 2022-04-19 北京博纳晶科科技有限公司 一种化学气相沉积设备的清洁方法
CN116924623B (zh) * 2023-08-14 2024-06-11 衡阳凯新特种材料科技有限公司 一种特种材料生产线用污水处理装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4781803A (en) * 1985-02-26 1988-11-01 The Standard Oil Company Electrolytic processes employing platinum based amorphous metal alloy oxygen anodes
US5185074A (en) * 1988-08-15 1993-02-09 Idemitsu Kosan Co., Ltd. Process for producing color filter
US5012868A (en) * 1989-03-14 1991-05-07 Uentech Corporation Corrosion inhibition method and apparatus for downhole electrical heating in mineral fluid wells
JPH05270982A (ja) * 1992-03-27 1993-10-19 Idemitsu Petrochem Co Ltd ダイヤモンド膜の製造方法
US5451754A (en) * 1993-10-27 1995-09-19 Xerox Corporation Corona generating device
US6271498B1 (en) * 1997-06-23 2001-08-07 Nissin Electric Co., Ltd Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus
US6079426A (en) * 1997-07-02 2000-06-27 Applied Materials, Inc. Method and apparatus for determining the endpoint in a plasma cleaning process
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
JP4459329B2 (ja) * 1999-08-05 2010-04-28 キヤノンアネルバ株式会社 付着膜の除去方法及び除去装置
JP2001345280A (ja) * 2000-03-28 2001-12-14 Hideki Matsumura 化学蒸着方法及び化学蒸着装置
US20050109627A1 (en) * 2003-10-10 2005-05-26 Applied Materials, Inc. Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features
JP2002008997A (ja) * 2000-06-23 2002-01-11 Hitachi Kokusai Electric Inc 半導体装置の製造方法及びその装置
EP1258914B1 (en) * 2000-09-14 2006-11-22 Japan as represented by President of Japan Advanced Institute of Science and Technology Heating element cvd device
JP4435395B2 (ja) * 2000-09-14 2010-03-17 キヤノンアネルバ株式会社 発熱体ｃｖｄ装置
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
JP2002246310A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
US6562201B2 (en) * 2001-06-08 2003-05-13 Applied Semiconductor, Inc. Semiconductive polymeric system, devices incorporating the same, and its use in controlling corrosion
JP3787816B2 (ja) * 2002-10-04 2006-06-21 キヤノンアネルバ株式会社 発熱体ｃｖｄ装置

Also Published As

Publication number Publication date
US20070209677A1 (en) 2007-09-13
US20120145184A1 (en) 2012-06-14
CN1943014A (zh) 2007-04-04
CN100530546C (zh) 2009-08-19
TW200533780A (en) 2005-10-16
JPWO2005086210A1 (ja) 2008-01-24
JP4520460B2 (ja) 2010-08-04
WO2005086210A1 (ja) 2005-09-15

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MM4A Annulment or lapse of patent due to non-payment of fees