JP4519804B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4519804B2
JP4519804B2 JP2006142874A JP2006142874A JP4519804B2 JP 4519804 B2 JP4519804 B2 JP 4519804B2 JP 2006142874 A JP2006142874 A JP 2006142874A JP 2006142874 A JP2006142874 A JP 2006142874A JP 4519804 B2 JP4519804 B2 JP 4519804B2
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layer
region
silicon
sacrificial layer
forming
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JP2006142874A
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Japanese (ja)
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JP2007001004A (ja
JP2007001004A5 (enrdf_load_stackoverflow
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小波 泉
真弓 山口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006142874A 2005-05-27 2006-05-23 半導体装置の作製方法 Expired - Fee Related JP4519804B2 (ja)

Priority Applications (1)

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JP2006142874A JP4519804B2 (ja) 2005-05-27 2006-05-23 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005156472 2005-05-27
JP2006142874A JP4519804B2 (ja) 2005-05-27 2006-05-23 半導体装置の作製方法

Related Child Applications (1)

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JP2007007348A Division JP2007152554A (ja) 2005-05-27 2007-01-16 半導体装置

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JP2007001004A JP2007001004A (ja) 2007-01-11
JP2007001004A5 JP2007001004A5 (enrdf_load_stackoverflow) 2007-03-01
JP4519804B2 true JP4519804B2 (ja) 2010-08-04

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JP2006142874A Expired - Fee Related JP4519804B2 (ja) 2005-05-27 2006-05-23 半導体装置の作製方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007007845A (ja) * 2005-05-31 2007-01-18 Semiconductor Energy Lab Co Ltd 微小構造体、およびその作製方法
JP2007044864A (ja) * 2005-07-15 2007-02-22 Semiconductor Energy Lab Co Ltd 微小電気機械式装置の作製方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5127181B2 (ja) * 2005-08-10 2013-01-23 株式会社半導体エネルギー研究所 微小電気機械式装置の作製方法
KR101541906B1 (ko) 2007-11-07 2015-08-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 미소 전기기계식 장치 및 그 제작 방법
JP5271674B2 (ja) * 2007-11-13 2013-08-21 株式会社半導体エネルギー研究所 微小電気機械式装置
KR100911166B1 (ko) * 2007-12-26 2009-08-06 한국철도기술연구원 철도차량 조향성능 시험을 위한 축소 곡선트랙 시험장치
JP5210901B2 (ja) * 2008-02-06 2013-06-12 株式会社半導体エネルギー研究所 液晶表示装置
KR101603303B1 (ko) * 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
KR101046064B1 (ko) * 2008-12-11 2011-07-01 삼성전기주식회사 박막소자 제조방법
JP5396335B2 (ja) 2009-05-28 2014-01-22 株式会社半導体エネルギー研究所 タッチパネル
US20130020573A1 (en) * 2010-03-29 2013-01-24 Keiichi Fukuyama Pressure detecting device and method for manufacturing the same, display device and method for manufacturing the same, and tft substrate with pressure detecting device
JP6860514B2 (ja) * 2018-03-14 2021-04-14 株式会社東芝 Ｍｅｍｓ素子及びその製造方法
KR20210084122A (ko) * 2019-12-27 2021-07-07 웨이브로드 주식회사 반도체 발광소자를 제조하는 방법

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JPS61212052A (ja) * 1985-03-18 1986-09-20 Nissan Motor Co Ltd 梁構造体を有する半導体装置
US5417111A (en) * 1990-08-17 1995-05-23 Analog Devices, Inc. Monolithic chip containing integrated circuitry and suspended microstructure
JP2791858B2 (ja) * 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH097946A (ja) * 1995-06-26 1997-01-10 Toyota Motor Corp 多結晶シリコン膜の製造方法
US5808331A (en) * 1995-09-05 1998-09-15 Motorola, Inc. Monolithic semiconductor device having a microstructure and a transistor
US5550090A (en) * 1995-09-05 1996-08-27 Motorola Inc. Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures
US5798283A (en) * 1995-09-06 1998-08-25 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
JP3566809B2 (ja) * 1996-08-12 2004-09-15 株式会社豊田中央研究所 多結晶シリコン薄膜の製造方法および多結晶シリコン薄膜構造体素子
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW523920B (en) * 2000-11-18 2003-03-11 Lenghways Technology Co Ltd Integrated multi-channel communication passive device manufactured by using micro-electromechanical technique
DE10065013B4 (de) * 2000-12-23 2009-12-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
US7128783B2 (en) * 2002-04-23 2006-10-31 Sharp Laboratories Of America, Inc. Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
US6531331B1 (en) * 2002-07-16 2003-03-11 Sandia Corporation Monolithic integration of a MOSFET with a MEMS device
US7335971B2 (en) * 2003-03-31 2008-02-26 Robert Bosch Gmbh Method for protecting encapsulated sensor structures using stack packaging
JP2007021713A (ja) * 2005-06-17 2007-02-01 Semiconductor Energy Lab Co Ltd 半導体装置、およびその作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007007845A (ja) * 2005-05-31 2007-01-18 Semiconductor Energy Lab Co Ltd 微小構造体、およびその作製方法
JP2007044864A (ja) * 2005-07-15 2007-02-22 Semiconductor Energy Lab Co Ltd 微小電気機械式装置の作製方法

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JP2007001004A (ja) 2007-01-11

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