JP4519278B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4519278B2
JP4519278B2 JP2000205919A JP2000205919A JP4519278B2 JP 4519278 B2 JP4519278 B2 JP 4519278B2 JP 2000205919 A JP2000205919 A JP 2000205919A JP 2000205919 A JP2000205919 A JP 2000205919A JP 4519278 B2 JP4519278 B2 JP 4519278B2
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Japan
Prior art keywords
film
group
substrate
tft
region
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JP2000205919A
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Japanese (ja)
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JP2002026331A (ja
JP2002026331A5 (enExample
Inventor
智史 吉本
幸治 小野
達也 荒尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000205919A priority Critical patent/JP4519278B2/ja
Publication of JP2002026331A publication Critical patent/JP2002026331A/ja
Publication of JP2002026331A5 publication Critical patent/JP2002026331A5/ja
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Publication of JP4519278B2 publication Critical patent/JP4519278B2/ja
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  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2000205919A 2000-07-06 2000-07-06 半導体装置の作製方法 Expired - Fee Related JP4519278B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000205919A JP4519278B2 (ja) 2000-07-06 2000-07-06 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000205919A JP4519278B2 (ja) 2000-07-06 2000-07-06 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002026331A JP2002026331A (ja) 2002-01-25
JP2002026331A5 JP2002026331A5 (enExample) 2009-01-08
JP4519278B2 true JP4519278B2 (ja) 2010-08-04

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JP2000205919A Expired - Fee Related JP4519278B2 (ja) 2000-07-06 2000-07-06 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US7038239B2 (en) * 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7411215B2 (en) 2002-04-15 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
US6933568B2 (en) 2002-05-17 2005-08-23 Samsung Electronics Co., Ltd. Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4524413B2 (ja) * 2003-06-30 2010-08-18 シャープ株式会社 結晶化方法
WO2007086163A1 (ja) * 2006-01-25 2007-08-02 Sharp Kabushiki Kaisha 半導体装置の製造方法、及び、半導体装置
KR100749478B1 (ko) * 2006-11-21 2007-08-14 삼성에스디아이 주식회사 고상 결정화 장치 및 이를 이용한 박막 트랜지스터의 제조방법
JP2008300865A (ja) * 2008-07-30 2008-12-11 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3345363B2 (ja) * 1998-12-07 2002-11-18 富士通株式会社 多結晶シリコン薄膜の形成方法及び薄膜トランジスタの製造方法
JP4450900B2 (ja) * 1998-10-06 2010-04-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2002026331A (ja) 2002-01-25

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