JP4518209B1 - Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 - Google Patents

Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 Download PDF

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JP4518209B1
JP4518209B1 JP2009287970A JP2009287970A JP4518209B1 JP 4518209 B1 JP4518209 B1 JP 4518209B1 JP 2009287970 A JP2009287970 A JP 2009287970A JP 2009287970 A JP2009287970 A JP 2009287970A JP 4518209 B1 JP4518209 B1 JP 4518209B1
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crystal substrate
group iii
iii nitride
plane
main surface
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JP2011073957A (ja
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恵二 石橋
祐介 善積
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2009287970A priority Critical patent/JP4518209B1/ja
Priority to CN2010800397711A priority patent/CN102484181A/zh
Priority to PCT/JP2010/051158 priority patent/WO2011027580A1/ja
Priority to KR1020127007437A priority patent/KR101614576B1/ko
Priority to EP10813531.0A priority patent/EP2477237B1/en
Priority to TW099102753A priority patent/TW201109488A/zh
Priority to US12/837,872 priority patent/US8771552B2/en
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Publication of JP4518209B1 publication Critical patent/JP4518209B1/ja
Publication of JP2011073957A publication Critical patent/JP2011073957A/ja
Priority to US13/469,576 priority patent/US20120223417A1/en
Priority to US13/526,061 priority patent/US9708735B2/en
Priority to US14/304,554 priority patent/US9499925B2/en
Priority to US15/623,077 priority patent/US10113248B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2009287970A 2005-06-23 2009-12-18 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 Active JP4518209B1 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2009287970A JP4518209B1 (ja) 2009-09-07 2009-12-18 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
CN2010800397711A CN102484181A (zh) 2009-09-07 2010-01-28 Iii族氮化物晶体衬底、包含外延层的iii族氮化物晶体衬底、半导体器件及其制造方法
PCT/JP2010/051158 WO2011027580A1 (ja) 2009-09-07 2010-01-28 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
KR1020127007437A KR101614576B1 (ko) 2009-09-07 2010-01-28 Ⅲ족 질화물 결정 기판, 에피택셜층이 부착된 ⅲ족 질화물 결정 기판, 및 반도체 디바이스와 그 제조 방법
EP10813531.0A EP2477237B1 (en) 2009-09-07 2010-01-28 Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same
TW099102753A TW201109488A (en) 2009-09-07 2010-01-29 Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same
US12/837,872 US8771552B2 (en) 2005-06-23 2010-07-16 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US13/469,576 US20120223417A1 (en) 2005-06-23 2012-05-11 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
US13/526,061 US9708735B2 (en) 2005-06-23 2012-06-18 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US14/304,554 US9499925B2 (en) 2005-06-23 2014-06-13 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US15/623,077 US10113248B2 (en) 2005-06-23 2017-06-14 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

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JP2009206109 2009-09-07
JP2009206109 2009-09-07
JP2009287970A JP4518209B1 (ja) 2009-09-07 2009-12-18 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法

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JP2010117702A Active JP5024426B2 (ja) 2009-09-07 2010-05-21 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
JP2012137811A Active JP5724954B2 (ja) 2009-09-07 2012-06-19 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法

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JP2012137811A Active JP5724954B2 (ja) 2009-09-07 2012-06-19 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法

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EP (1) EP2477237B1 (enExample)
JP (3) JP4518209B1 (enExample)
KR (1) KR101614576B1 (enExample)
CN (1) CN102484181A (enExample)
TW (1) TW201109488A (enExample)
WO (1) WO2011027580A1 (enExample)

Cited By (8)

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JP2011073958A (ja) * 2009-09-07 2011-04-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
US8192543B2 (en) 2005-06-23 2012-06-05 Sumitomo Electric Industries, Ltd. Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
US8771552B2 (en) 2005-06-23 2014-07-08 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US9064706B2 (en) * 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
EP2498305A3 (en) * 2011-03-07 2015-07-15 Stanley Electric Co., Ltd. Optical semiconductor element and manufacturing method of the same
US9708735B2 (en) 2005-06-23 2017-07-18 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
JPWO2020203541A1 (enExample) * 2019-03-29 2020-10-08
CN111948235A (zh) * 2020-08-07 2020-11-17 广西大学 测量半极性面ⅲ族氮化物薄膜缺陷密度的方法及其应用

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JP5381581B2 (ja) * 2009-09-30 2014-01-08 住友電気工業株式会社 窒化ガリウム基板
JP2012209766A (ja) 2011-03-30 2012-10-25 Yamaha Corp コントローラー
JP2013177256A (ja) * 2012-02-28 2013-09-09 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物基板
JP6611485B2 (ja) 2014-11-07 2019-11-27 株式会社フジミインコーポレーテッド 研磨方法およびポリシング用組成物
EP3247824A1 (en) * 2015-01-22 2017-11-29 SixPoint Materials, Inc. Seed selection and growth methods for reduced-crack group iii nitride bulk crystals
KR102306671B1 (ko) * 2015-06-16 2021-09-29 삼성전자주식회사 발광 소자 패키지
JP6872075B2 (ja) * 2018-03-27 2021-05-19 日本碍子株式会社 窒化アルミニウム板
US12038396B2 (en) * 2019-11-01 2024-07-16 Mitsubishi Electric Corporation Crystal defect observation method for compound semiconductor
EP4165689A2 (en) * 2020-06-15 2023-04-19 Google LLC Low-defect optoelectronic devices grown by mbe and other techniques
CN111693850B (zh) * 2020-06-17 2023-03-28 西安微电子技术研究所 一种芯片抗辐照性能的监控方法
CN119278377A (zh) * 2022-03-07 2025-01-07 株式会社理学 X射线衍射数据处理装置和x射线分析装置

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JP2001322899A (ja) 2000-05-11 2001-11-20 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体基板及びその製造方法
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