JP4503246B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4503246B2
JP4503246B2 JP2003175727A JP2003175727A JP4503246B2 JP 4503246 B2 JP4503246 B2 JP 4503246B2 JP 2003175727 A JP2003175727 A JP 2003175727A JP 2003175727 A JP2003175727 A JP 2003175727A JP 4503246 B2 JP4503246 B2 JP 4503246B2
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Japan
Prior art keywords
laser
semiconductor film
film
laser light
laser beam
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Expired - Fee Related
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JP2003175727A
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Japanese (ja)
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JP2004088084A5 (enExample
JP2004088084A (ja
Inventor
舜平 山崎
幸一郎 田中
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003175727A priority Critical patent/JP4503246B2/ja
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Publication of JP2004088084A5 publication Critical patent/JP2004088084A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003175727A 2002-06-25 2003-06-20 半導体装置の作製方法 Expired - Fee Related JP4503246B2 (ja)

Priority Applications (1)

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JP2003175727A JP4503246B2 (ja) 2002-06-25 2003-06-20 半導体装置の作製方法

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JP2002183839 2002-06-25
JP2003175727A JP4503246B2 (ja) 2002-06-25 2003-06-20 半導体装置の作製方法

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JP2004088084A JP2004088084A (ja) 2004-03-18
JP2004088084A5 JP2004088084A5 (enExample) 2006-08-03
JP4503246B2 true JP4503246B2 (ja) 2010-07-14

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5250181B2 (ja) * 2004-05-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
KR100689315B1 (ko) * 2004-08-10 2007-03-08 엘지.필립스 엘시디 주식회사 실리콘 박막 결정화 장치 및 이를 이용한 결정화 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723217A (en) * 1980-07-18 1982-02-06 Fujitsu Ltd Manufacture of semiconductor device
JPS5886717A (ja) * 1981-11-18 1983-05-24 Nec Corp 単結晶シリコン膜形成法
JPS58151042A (ja) * 1982-03-03 1983-09-08 Fujitsu Ltd 半導体装置の製造方法
JPS61241909A (ja) * 1985-04-19 1986-10-28 Agency Of Ind Science & Technol Ｓｏｉ結晶形成法
JPH02143417A (ja) * 1988-11-24 1990-06-01 Sharp Corp 半導体装置の製造方法
JPH05226790A (ja) * 1992-02-18 1993-09-03 Hitachi Ltd レーザアニール装置
JP3216861B2 (ja) * 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
JPH11352420A (ja) * 1998-06-04 1999-12-24 Sumitomo Heavy Ind Ltd ビーム回転機能付ホモジナイザ装置及びこれを用いたレーザ加工装置
JP2000243968A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2001156017A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた熱処理方法並びに半導体装置の作製方法
JP4836333B2 (ja) * 2000-01-28 2011-12-14 株式会社半導体エネルギー研究所 半導体装置
JP2001274433A (ja) * 2000-03-24 2001-10-05 Japan Steel Works Ltd:The シリコン膜の結晶化方法及び多結晶シリコン膜の製造方法並びに多結晶シリコン膜を用いたディバイス
JP4558140B2 (ja) * 2000-05-02 2010-10-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683761B2 (ja) * 2000-05-12 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法

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