JP4501412B2 - 半導体素子、デバイス及び電子機器 - Google Patents

半導体素子、デバイス及び電子機器 Download PDF

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Publication number
JP4501412B2
JP4501412B2 JP2003381053A JP2003381053A JP4501412B2 JP 4501412 B2 JP4501412 B2 JP 4501412B2 JP 2003381053 A JP2003381053 A JP 2003381053A JP 2003381053 A JP2003381053 A JP 2003381053A JP 4501412 B2 JP4501412 B2 JP 4501412B2
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Japan
Prior art keywords
emitting laser
type semiconductor
semiconductor layer
surface emitting
tile
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Japanese (ja)
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JP2005150144A5 (enrdf_load_stackoverflow
JP2005150144A (ja
Inventor
貴幸 近藤
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of JP2005150144A5 publication Critical patent/JP2005150144A5/ja
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  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2003381053A 2003-11-11 2003-11-11 半導体素子、デバイス及び電子機器 Expired - Fee Related JP4501412B2 (ja)

Priority Applications (1)

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JP2003381053A JP4501412B2 (ja) 2003-11-11 2003-11-11 半導体素子、デバイス及び電子機器

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Application Number Priority Date Filing Date Title
JP2003381053A JP4501412B2 (ja) 2003-11-11 2003-11-11 半導体素子、デバイス及び電子機器

Publications (3)

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JP2005150144A JP2005150144A (ja) 2005-06-09
JP2005150144A5 JP2005150144A5 (enrdf_load_stackoverflow) 2006-12-28
JP4501412B2 true JP4501412B2 (ja) 2010-07-14

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JP2003381053A Expired - Fee Related JP4501412B2 (ja) 2003-11-11 2003-11-11 半導体素子、デバイス及び電子機器

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JP (1) JP4501412B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP4827698B2 (ja) * 2006-10-27 2011-11-30 キヤノン株式会社 発光素子の形成方法
WO2008053907A1 (en) * 2006-10-27 2008-05-08 Canon Kabushiki Kaisha Led array manufacturing method, led array and led printer
US20150377788A1 (en) * 2013-02-14 2015-12-31 Sharp Kabushiki Kaisha Optical sensor head and optical sensor system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283447A (en) * 1992-01-21 1994-02-01 Bandgap Technology Corporation Integration of transistors with vertical cavity surface emitting lasers
JPH09135049A (ja) * 1995-10-27 1997-05-20 Hewlett Packard Co <Hp> 表面発光レーザとそのパワー出力を監視するフォトダイオードとの集積化
JP3058077B2 (ja) * 1996-01-16 2000-07-04 松下電器産業株式会社 半導体受発光装置
US6483862B1 (en) * 1998-12-11 2002-11-19 Agilent Technologies, Inc. System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer

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