JP4501412B2 - Semiconductor element, device and electronic equipment - Google Patents

Description

  The present invention relates to a tiled surface emitting laser, a method for manufacturing a tiled surface emitting laser, a device, and an electronic apparatus.

  Since the laser efficiency of the semiconductor laser changes depending on the temperature or the like, it is required to optically monitor the laser light amount and control the drive current based on the laser light amount. A conventional end face type semiconductor laser is mounted on a columnar base side called a stem. A conventional end facet type semiconductor laser outputs front light (front output light) and back light (rear output light), and the drive current is controlled using the back light as monitor light (for example, Patent Documents). 1 (see FIG. 9).

On the other hand, since the surface emitting laser emits light perpendicular to the semiconductor surface, it is difficult to use the back light like the end face type semiconductor laser. Therefore, conventionally, a method has been devised in which light reflected by the package glass covering the surface emitting laser is used as monitor light (see, for example, FIG. 3 of Patent Document 2).
JP-A-8-116127 Japanese Unexamined Patent Publication No. 9-198707

  However, the surface-emitting laser device described in Patent Document 2 requires a package that covers the surface-emitting laser, which hinders downsizing that is a feature of the surface-emitting laser.

The present invention has been made in view of the above circumstances, and is a tile-shaped surface-emitting laser that can detect the amount of light of the surface-emitting laser and can be easily downsized. An object of the present invention is to provide a manufacturing method, a device, and an electronic apparatus for a tiled surface emitting laser.
The present invention also provides a tiled surface emitting laser that forms a surface emitting laser as a tiled element and can detect the amount of the surface emitting laser without providing a light receiving element separately from the tiled element, An object of the present invention is to provide a manufacturing method, a device, and an electronic apparatus of a tiled surface emitting laser.

In order to achieve the above object, a tiled surface emitting laser according to the present invention includes a tiled element made of a semiconductor element formed in a tile shape, a surface emitting laser provided in the tiled element, and the tiled element. And a light receiving element provided in the element.
According to the present invention, since the surface emitting laser and the light receiving element are provided in one tile-shaped element, the amount of surface emitting laser light can be detected and the surface emitting can be easily reduced in size. A laser can be provided. That is, according to the present invention, the light receiving element provided in the tile-shaped element together with the surface emitting laser can detect the amount of back light or front light of the surface emitting laser. Then, by separately providing a current control circuit for controlling the amount of current flowing through the surface emitting laser based on the amount of light detected by the light receiving element, the light amount of the surface emitting laser can be automatically output controlled (APC). Therefore, according to the present invention, a package for covering the surface-emitting laser required in the conventional surface-emitting laser is not required, and the surface-emitting laser and the light-receiving element are provided in one tile-shaped element. Therefore, it can be reduced in size more easily than the conventional one, and can be easily manufactured.

In the tiled surface emitting laser of the present invention, the light receiving element receives a part of the light emitted from the surface emitting laser and is Schottky bonded to the back surface or the surface of the tiled element. It is preferable to have a metal film.
According to the present invention, for example, by disposing an n-type semiconductor on the back side or the front side of a tile-shaped element and providing the metal film that is Schottky-bonded to the n-type semiconductor, A Schottky diode can be provided. Then, by applying a reverse bias to the Schottky diode, the Schottky diode functions as a photodiode. Therefore, according to the present invention, the tile-shaped surface-emitting laser in which the surface-emitting laser and the light-receiving element are provided in one tile-shaped element can be easily configured.

Further, in the tiled surface emitting laser according to the present invention, the tile-shaped element has a tile main body part and a protrusion provided in a convex shape on the surface of the tile main body part, An n-type semiconductor provided on the protrusion, a p-type semiconductor layer adjacent to the n-type semiconductor and provided on the surface side of the tile body, and the p-type semiconductor It is preferable that the n-type semiconductor layer is a layer adjacent to the layer and provided in the tile body.
According to the present invention, for example, the n-type semiconductor provided on the protrusion constitutes an upper DBR (Distributed Bragg Reflector) mirror, and the p-type semiconductor layer of the tile body adjacent to the n-type semiconductor is on the lower side. A DBR mirror can be constructed. A surface emitting laser can be formed by disposing an active layer between the upper DBR mirror and the lower DBR mirror. Furthermore, the n-type semiconductor layer of the tile main body can form a photodiode together with the metal film by providing a metal film that is Schottky-bonded to the n-type semiconductor layer. Therefore, according to the present invention, the light emitted from the surface emitting laser having the n-type semiconductor of the projecting portion and the p-type semiconductor of the tile body portion is used as the photodiode having the n-type semiconductor layer of the tile body portion. Can be detected. That is, according to the present invention, the emitted light of the surface emitting laser emitted to the bottom surface side (n-type semiconductor layer side) of the tile body portion is monitored by the photodiode, and based on this, the tile body portion is projected to the protruding portion side. The amount of light emitted from the surface emitting laser can be controlled.

In the tile-shaped surface emitting laser according to the present invention, an anode electrode that is in ohmic contact with the p-type semiconductor layer is provided on the exposed surface of the p-type semiconductor layer, and the protrusion is provided on the surface of the protrusion. A cathode electrode that is ohmic-bonded to the n-type semiconductor is provided, and the n-type semiconductor layer of the tile body is a metal film that is Schottky-bonded to the n-type semiconductor layer, and is a component of the light receiving element It is preferable that a monitoring electrode is provided.
According to the present invention, for example, by applying a bias voltage to the anode electrode, connecting a switching circuit and a current control circuit to the cathode electrode, and connecting a current monitor circuit to the monitor electrode, the surface emitting laser is driven by APC. Can do. That is, the current monitor circuit can detect the current (current indicating the amount of light of the surface emitting laser) flowing through the photo diode of the tile-shaped element, and the current control circuit controls the current flowing to the surface emitting laser of the tile-shaped element based on the current. be able to. For example, when the current value detected by the current monitor circuit is smaller than a predetermined reference value, the current control circuit increases the current flowing to the surface emitting laser so that the light emission amount of the surface emitting laser is always constant regardless of the temperature. be able to.

In the tiled surface emitting laser of the present invention, it is preferable that an interface between the p-type semiconductor layer and the n-type semiconductor layer in the tile main body is provided in the indirect transition semiconductor layer.
According to the present invention, in a configuration in which the surface emitting laser and the light receiving element are provided in one tile-shaped element, the light emission amount of the surface emitting laser can be detected more accurately. That is, in the configuration of the tile-shaped surface-emitting laser, the interface between the p-type semiconductor layer of the tile main body and the n-type semiconductor layer adjacent to the p-type semiconductor layer depends on the composition of the p-type semiconductor layer and the n-type semiconductor layer. It may function as (LED). However, when the interface between the p-type semiconductor layer and the n-type semiconductor layer is provided in the indirect transition semiconductor layer, the interface does not function as a light emitting diode. Therefore, according to the present invention, it is possible to avoid the formation of a light-emitting diode at the interface between the p-type semiconductor layer and the n-type semiconductor layer, and to prevent light other than the surface-emitting laser light from entering the light-receiving element. Therefore, the amount of light emitted from the surface emitting laser can be detected more accurately.

In the tiled surface emitting laser according to the present invention, it is preferable that the n-type semiconductor layer is provided with a bias electrode which is an electrode in ohmic contact with the n-type semiconductor layer.
According to the present invention, the light emitting diode formed at the interface between the p-type semiconductor layer and the n-type semiconductor layer is short-circuited by the electrical wiring, for example, by connecting the bias electrode and the anode electrode by electrical wiring. It can be in a non-functional state. Therefore, according to the present invention, it is possible to more accurately detect the amount of light emitted from the surface emitting laser, and it is possible to widen the selection range of the members and compositions constituting the p-type semiconductor layer and the n-type semiconductor layer.

The tile-shaped surface-emitting laser of the present invention includes the tile-shaped element having a tile main body and a protrusion provided in a convex shape on the surface of the tile main-body, and the surface-emitting laser includes the protrusion A first p-type semiconductor layer that is a layer of a p-type semiconductor adjacent to the n-type semiconductor and provided on the surface side of the tile body, and the first p-type semiconductor An n-type semiconductor layer that is a layer adjacent to the layer and provided in the tile body, and the tile body is a layer adjacent to the n-type semiconductor layer. Preferably, the second p-type semiconductor layer is provided with a metal film (monitoring electrode) having a Schottky junction or an ohmic junction with the second p-type semiconductor layer.
According to the present invention, a photodiode can be configured by the n-type semiconductor layer and the second p-type semiconductor layer of the tile body. Therefore, the metal film (monitoring electrode) bonded to the second p-type semiconductor layer may be a Schottky junction or an ohmic junction. Here, when the monitoring metal film is an ohmic junction, the voltage drop in the metal film can be made smaller than in the case of the Schottky junction. Therefore, according to the present invention, the bias voltage of the surface emitting laser and the photodiode can be lowered. For example, the tiled surface emitting laser according to the present invention can be stably operated with a power supply voltage commonly used in an integrated circuit. Can do. Also, the ohmic electrode is easier to manufacture than the Schottky electrode. Therefore, according to the present invention, it is possible to provide a tiled surface emitting laser that can be more easily reduced in size than the conventional one and can be manufactured more easily.

In the tiled surface emitting laser according to the present invention, the tile-shaped element has a tile main body and a protrusion provided in a convex shape on the surface of the tile main body, and the protrusion includes a protrusion of the protrusion. An n-type semiconductor provided on the upper surface side, and a p-type semiconductor adjacent to the n-type semiconductor, wherein the tile body is a layer of an n-type semiconductor adjacent to the p-type semiconductor, and the tile body An n-type semiconductor layer that is a layer provided on the surface side of the protrusion, and the n-type semiconductor of the protrusion is provided with a monitor electrode that is Schottky bonded to the n-type semiconductor, and the protrusion The p-type semiconductor is provided with an anode electrode ohmic-bonded to the p-type semiconductor, and the n-type semiconductor layer of the tile body portion is provided with a cathode electrode ohmic-bonded to the n-type semiconductor layer. Preferably it is.
According to the present invention, the n-type semiconductor of the protruding portion and the monitoring electrode can constitute a photodiode, and the p-type semiconductor of the protruding portion and the n-type semiconductor of the tile body portion can constitute a surface emitting laser. Therefore, according to the present invention, the light receiving element can be arranged on the upper side of the protruding portion, and the emitted light of the surface emitting laser emitted to the protruding portion side (the upper surface side of the tile main body portion) is monitored and the bottom surface of the tile main body portion is monitored. The amount of light emitted from the surface emitting laser emitted to the side can be controlled.

In the tiled surface emitting laser of the present invention, the p-type semiconductor in the protrusion has a ring-shaped exposed surface on a surface including a joint surface with the n-type semiconductor, and the anode electrode has the p Is provided in a ring shape on the ring-shaped exposed surface of the type semiconductor, the cathode electrode is disposed at a position that does not overlap with the position of the protrusion in the n-type semiconductor layer of the tile main body, It is preferable that the monitor electrode is disposed on the upper surface of the n-type semiconductor of the protrusion.
According to the present invention, all of the anode electrode, the cathode electrode, and the monitor electrode can be disposed on the upper surface side (projection portion side) of the tile-shaped element. Therefore, according to the present invention, it is possible to increase variations in the electrical wiring connection form between the tiled surface emitting laser and another substrate (final substrate). Therefore, according to the present invention, it is possible to provide a device including the tiled surface emitting laser more simply and with high reliability.

In order to achieve the above object, the device of the present invention includes the tiled surface emitting laser.
According to the present invention, the tile-shaped surface-emitting laser including the surface-emitting laser and the light-receiving element that detects the light amount of the surface-emitting laser is a constituent element. It is possible to provide a device that forms an optical communication transmission unit that is not affected by temperature or the like.

The device of the present invention includes a bias circuit for applying a bias voltage to the anode electrode in the tiled surface emitting laser, a switching circuit connected to the cathode electrode in the tiled surface emitting laser, and a current flowing in the switching circuit. A current control circuit for controlling the amount, and a current monitor circuit for detecting a current flowing out from the monitoring electrode in the tiled surface emitting laser, the current control circuit having a current value detected by the monitor circuit. It is preferable to control the amount of current based on the above.
According to the present invention, the amount of surface emitting laser light in a tiled surface emitting laser can be automatically output controlled (APC), which is smaller than the conventional one, and the amount of emitted laser light is not affected by temperature or the like. It is possible to provide a device that forms a transmission unit for optical communication. For example, the device of the present invention is simply configured by bonding and connecting the tiled surface emitting laser to a substrate (final substrate) having the bias circuit, switching circuit, current control circuit, and current monitor circuit. be able to.

In order to achieve the above object, a method for manufacturing a tile-shaped surface-emitting laser according to the present invention includes a tile-shaped surface-emitting laser and a light-receiving element that receives a part of light emitted from the surface-emitting laser. A method of manufacturing a surface emitting laser, comprising: forming a functional part having an electronic function on a semiconductor substrate; and cutting a desired portion including the functional part in the semiconductor substrate from the semiconductor substrate to obtain a tile-shaped element. All or part of the tile-shaped element is manufactured using a forming step.
According to the present invention, the tile-shaped surface emitting laser is manufactured by using a so-called epitaxial lift-off (ELO) method in which a functional portion is formed on a semiconductor substrate and the functional portion is cut from the semiconductor substrate to form a tile-shaped element. be able to. Therefore, according to the present invention, a surface-emitting laser of a tile-shaped element, which is a small tile-shaped laser that can detect the light amount of the surface-emitting laser without providing a light receiving element separately from the tile-shaped element. A surface emitting laser can be easily manufactured.

In the tiled surface emitting laser manufacturing method of the present invention, the surface emitting laser is formed on the semiconductor substrate in the step of forming the functional part, and the light receiving element is formed in the step of forming the tiled element. It is preferable to form a tile-shaped element by cutting a desired portion from the semiconductor substrate and then performing Schottky bonding to a metal film on the exposed surface of the tile-shaped element.
According to the present invention, the Schottky electrode is formed on the exposed surface of the tile-shaped element after the tile-shaped element including the surface emitting laser is formed. Therefore, the Schottky electrode can be easily formed. That is, after forming a Schottky electrode on a semiconductor substrate, it is very difficult and not practical to form a surface emitting laser on the semiconductor substrate.

Further, in the method for manufacturing a tiled surface emitting laser according to the present invention, the step of forming the tile-shaped element includes a step of attaching a film to the desired portion, and a tile-shaped element formed by the desired portion cut from the semiconductor substrate. By attaching the film to the film and holding the film on the exposed surface side of the tile-like element that is attached to the film and holding or depositing a metal thin film together with the film. The light receiving element is preferably formed.
According to the present invention, a metal thin film is formed by vapor deposition or sputtering on the exposed surface (for example, the entire back surface) of the tile-shaped element together with the film in a state where the tile-shaped element is attached to the film, and the Schottky electrode (Light receiving element) can be formed. In this way, since it is not necessary to use a mask in order to form the Schottky electrode, the Schottky electrode can be easily formed.

  According to another aspect of the present invention, there is provided an electronic apparatus including the tiled surface emitting laser or the device. According to the present invention, it is possible to reduce the cost of an electronic device including a tile-shaped surface-emitting laser that is a minute tile-shaped surface-emitting laser and that can perform automatic output control without providing a light-receiving element separately from the tile shape. Can be offered at.

<First Embodiment>
Hereinafter, a tiled surface emitting laser according to a first embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a micro tile element having a fine tile shape will be described as an example of a tile element, but the present invention is not limited to this and may be applied to a tile element that is not micro. it can. FIG. 1 is a schematic cross-sectional view showing an example of a tiled surface emitting laser according to the first embodiment of the present invention.

  The tiled surface emitting laser 1a of the present embodiment is composed of a minute tile-shaped element that is a semiconductor element formed in a minute tile shape. The tile-shaped surface emitting laser 1a is a plate-like member having a thickness of 20 μm or less and a vertical and horizontal size of several tens to several hundreds of μm, for example. The manufacturing method of the tile-shaped surface-emitting laser 1a is such that a sacrificial layer is formed on a semiconductor substrate (first substrate), and a functional layer (electronic function unit) that forms the main part of the tile-shaped surface-emitting laser 1a is formed on the sacrificial layer. Are stacked. Next, by etching the sacrificial layer, the main part of the tiled surface emitting laser 1a is separated from the semiconductor substrate. Next, a metal film is Schottky bonded to the bottom surface of the main part of the tiled surface emitting laser 1a to complete the tiled surface emitting laser 1a. A method of manufacturing the tiled surface emitting laser 1a using such an epitaxial lift-off (ELO) method will be described in detail later.

The tile-shaped surface emitting laser 1a includes a surface emitting laser and a light receiving element that receives a part of the laser light emitted from the surface emitting laser. Next, a specific structure of the tile-shaped surface emitting laser 1a will be described.
The tile-shaped surface-emitting laser 1a includes a tile main body having a p-type semiconductor layer 12 and an n-type semiconductor layer 13, and a protrusion having an n-type semiconductor (n-DBR) 11. Yes. The protruding portion is provided in a convex shape at a substantially central portion of the surface of the tile main body. A p-type semiconductor layer 12 is provided above the n-type semiconductor layer 13 in the tile body. An n-type semiconductor 11 forming a protrusion is provided on the upper layer of the substantially central portion of the p-type semiconductor layer 12.

  Furthermore, an anode electrode 21 made of a metal film that is in ohmic contact with the p-type semiconductor layer is provided on the exposed surface of the p-type semiconductor layer 12 of the tile body. The anode electrode 21 is made of, for example, AuZn or Au. In addition, a cathode electrode 22 made of a metal film that is in ohmic contact with the n-type semiconductor is provided on a part of the surface of the n-type semiconductor that forms the protrusion. The cathode electrode 22 is made of, for example, AuGe, Ni, An, or the like. The entire back surface of the n-type semiconductor layer 12 of the tile body is provided with a monitor electrode 23 that is a metal film Schottky-bonded to the n-type semiconductor layer 12 and serves as a component of the light receiving element. The monitor electrode 23 is made of, for example, Au, Ti, Al, Pt, Ni, Pd, WSi, Wal, WN, or the like.

  In the tiled surface emitting laser 1a having the above configuration, the p-type semiconductor layer 12 of the tile body constitutes a DBR mirror made of, for example, a p-type AlGaAs multilayer film. An active layer (not shown) is provided on the p-type semiconductor layer 12. The active layer is laminated in a thin cylindrical shape in a region near the center on the upper surface of the p-type semiconductor layer 12, and is made of, for example, AlGaAs. The n-type semiconductor 11 forming the protrusion is stacked in a cylindrical shape above the p-type semiconductor layer 12 and on the active layer, and constitutes a DBR mirror made of, for example, an n-type AlGaAs multilayer film. . The p-type semiconductor layer 12, the active layer, and the n-type semiconductor 11 form an optical resonator that forms a surface emitting laser. Therefore, by applying a bias voltage to the anode electrode 21 and setting the cathode electrode 22 to the ground potential, a forward current flows through the surface-emitting laser, whereby laser light is emitted from the surface-emitting laser.

  Further, in the tiled surface emitting laser 1a having the above-described configuration, a Schottky diode is formed at the interface between the n-type semiconductor layer 13 of the tile body and the monitor electrode 23 that is Schottky-bonded to the n-type semiconductor layer 13. . This Schottky diode functions as a photodiode by applying a reverse bias by applying a bias voltage to the anode electrode 21 and setting the monitoring electrode 23 to, for example, a ground potential. Then, one of the front light and the back light (monitor light) emitted from the surface emitting laser including the p-type semiconductor layer 12, the active layer, and the n-type semiconductor 11 is the n-type semiconductor layer 13 and the monitor electrode 23. The light is incident on the photodiode formed at the interface.

Next, the tiled surface emitting laser 1a having the above structure, its drive circuit, and the operation thereof will be described with reference to FIGS. FIG. 2 is a block diagram showing the tile-shaped surface emitting laser 1a and its switching drive circuit according to the first embodiment of the present invention. FIG. 3 is an equivalent circuit diagram of the configuration diagram of FIG.
A bias voltage Vdd is applied to the anode electrode 21 in the tile-shaped surface emitting laser 1a. The cathode electrode 22 is connected to the drain of an NMOS transistor 31 serving as switching means. The source of the NMOS transistor 31 is connected to the ground GND via the current control circuit 32. A modulation signal is input to the gate of the NMOS transistor 31. This modulation signal is an electric signal that is converted into an optical pulse signal by the tiled surface emitting laser 1a, that is, a transmission signal. Further, the monitoring electrode 23 in the tile-shaped surface emitting laser 1 a is connected to the ground GND via the current monitoring circuit 33.

  In such a circuit configuration, the surface emitting laser VC composed of the p-type semiconductor layer 12, the active layer, and the n-type semiconductor 11 emits laser light not only in the upper part of the drawing (front light) but also in the lower part of the drawing (back light). Radiated. That is, from the surface emitting laser VC, as shown in FIG. 2, for example, laser light for transmitting a signal is emitted in the upper part of the drawing, and monitor light is emitted in the lower part of the drawing.

  On the other hand, the interface A between the n-type semiconductor layer 13 of the tile body and the monitor electrode 23 is a Schottky diode SD as described above. A reverse bias is applied to the cathode of the Schottky diode SD via a diode D formed at the interface B between the n-type semiconductor layer 13 and the p-type semiconductor layer 12, as shown in FIG. That is, the cathode of the diode D is connected to the cathode of the Schottky diode SD, and the bias voltage Vdd is applied to the anode of the diode D. The anode of the Schottky diode SD is connected to the ground GND via the current monitor circuit 33. As a result, the Schottky diode SD functions as a photodiode, and a current corresponding to the amount of light incident on the Schottky diode SD flows through the Schottky diode SD.

  When the laser light (monitor light) emitted from the surface emitting laser VC enters the Schottky diode SD, a monitor current Im flows. The monitor current Im is determined by the amount of light incident on the Schottky diode SD (monitor light intensity) and the bias voltage applied to the Schottky diode SD. The current monitor circuit 33 measures a monitor current Im that is a current flowing through the Schottky diode SD, and feeds back the measured value to the current control circuit 32. Then, the current control circuit 32 controls the drive current of the surface emitting laser VC so that the monitor current Im becomes a predetermined constant value set in advance.

  Thus, according to the tiled surface emitting laser 1a and the drive circuit of the present embodiment, the laser light intensity of the surface emitting laser VC of the tiled surface emitting laser 1a can be automatically output controlled (APC). According to the present embodiment, the surface emitting laser VC and the light receiving element (Schottky diode SD) are arranged in one minute tile-shaped element. It is possible to provide a device that forms an optical communication transmitter that is not affected by temperature or the like. That is, according to the tiled surface emitting laser 1a of the present embodiment, a package for covering the surface emitting laser that is required in the conventional surface emitting laser is not required, and a light receiving element is provided separately from the surface emitting laser. Since it is not necessary to provide, it can be reduced in size more easily than before and can be easily manufactured.

  By the way, in the tile-shaped surface emitting laser 1a of this embodiment, as shown in FIG. 3, the diode D is formed in the interface B of the n-type semiconductor layer 13 and the p-type semiconductor layer 12 of a tile main-body part. A bias voltage Vdd is applied to the diode D in the forward direction, so that it does not normally disturb the current flowing through the Schottky diode SD. However, a voltage drop occurs in the diode D, and accordingly, the voltage applied to the Schottky diode SD becomes smaller than the bias voltage Vdd. The voltage drop due to the diode D does not cause a problem in a normal electronic circuit and an integrated circuit that drive the tiled surface emitting laser 1a.

  The diode D formed at the interface B functions as a light emitting diode (LED) when the monitor current Im flows through the diode D. If the light emitted from the diode D enters the Schottky diode SD, the light intensity of the surface emitting laser VC may be misrecognized, which may be a problem. However, actually, the monitor current Im is very small, and at the interface B, the monitor current Im spreads in the horizontal direction (the surface direction of the interface B), and the current density is small. As a result, in the electronic circuit and the integrated circuit that form a normal drive circuit for the tiled surface emitting laser 1a, there is a possibility of erroneous recognition of the light intensity of the surface emitting laser VC by the light emitted from the diode D (monitor current Im Can be ignored.

<Second Embodiment>
Next, a tiled surface emitting laser according to a second embodiment of the present invention will be described with reference to FIG. FIG. 4 is a schematic cross-sectional view showing an example of a tiled surface emitting laser according to the second embodiment of the present invention. In FIG. 4, the same components as those of the tiled surface emitting laser shown in FIG. The tiled surface emitting laser 1b according to the present embodiment is a countermeasure taken when the light emitted from the diode D cannot be ignored in the tiled surface emitting laser 1a according to the first embodiment. That is, the tiled surface emitting laser 1b of the present embodiment has a structure in which light is not emitted from the diode D in the tiled surface emitting laser 1a of the first embodiment.

  The difference between the tiled surface emitting laser 1b of the present embodiment and the tiled surface emitting laser 1a of the first embodiment is that a p-type semiconductor layer (second p-type semiconductor layer 12b) and an n-type semiconductor layer ( An interface B ′ (pn junction) with the first n-type semiconductor layer 13a) is provided in the indirect transition semiconductor layer. Specifically, in the tiled surface emitting laser 1b, a first p-type semiconductor layer 12a and a second p-type semiconductor layer 12b are provided as layers corresponding to the p-type semiconductor layer 12 of the tiled surface emitting laser 1a. . In the tiled surface emitting laser 1b, a first n-type semiconductor layer 13a and a second n-type semiconductor layer 13b are provided as layers corresponding to the n-type semiconductor layer 13 of the tile-shaped surface emitting laser 1a.

  The first p-type semiconductor layer 12a of the tile main body constitutes a DBR mirror made of, for example, a p-type AlGaAs multilayer film. An active layer (not shown) is provided on the first p-type semiconductor layer 12a. The active layer is laminated in a thin cylindrical shape in a region near the center on the upper surface of the first p-type semiconductor layer 12a, and is made of, for example, AlGaAs. The n-type semiconductor 11 forming the protrusion is stacked in a cylindrical shape above the first p-type semiconductor layer 12a and on the active layer, and constitutes a DBR mirror made of, for example, an n-type AlGaAs multilayer film. Yes. The first p-type semiconductor layer 12a, the active layer, and the n-type semiconductor 11 form an optical resonator that forms a surface emitting laser.

A second p-type semiconductor layer 12b is provided below the first p-type semiconductor layer 12a of the tile body. The second p-type semiconductor layer 12b is made of, for example, p-type AlGaAs. The second p-type semiconductor layer 12b has a composition in which “X” in “Al _X Ga _1-X As” is 0.4 or more. For example, “X” = 0.5.
A first n-type semiconductor layer 13a is provided below the second p-type semiconductor layer 12b. The first n-type semiconductor layer 13a is made of, for example, n-type AlGaAs. The first n-type semiconductor layer 13a also has a composition in which “X” in “Al _X Ga _1-X As” is 0.4 or more. For example, “X” = 0.5.

In this case, “Al _X Ga _1-X As” having the above “X” of 0.4 or more becomes an indirect transition semiconductor and does not emit light. Therefore, in the tiled surface emitting laser 1b of the present embodiment, the interface B ′ (pn junction) between the second p-type semiconductor layer 12b and the first n-type semiconductor layer 13a in the tile main body is provided in the indirect transition semiconductor layer. It is possible to prevent light from being emitted from the diode formed by the pn junction at the interface B ′.

In the tiled surface emitting laser 1b, a second n-type semiconductor layer 13b is provided below the first n-type semiconductor layer 13a. For example, the second n-type semiconductor layer 13b has a composition in which “X” in “n _X type Ga _{1 -X} As” is “0”. On the entire lower surface of the second n-type semiconductor layer 13b, a monitor electrode 23 made of a metal film bonded to the second n-type semiconductor layer 13b by a Schottky junction is provided. The monitor electrode 23 is made of, for example, Au, Ti, Al, Pt, Ni, Pd, WSi, Wal, WN, or the like. With such a structure, a Schottky diode that functions as a light receiving element is formed at the interface A ′ between the second n-type semiconductor layer 13 b and the monitoring electrode 23.
Further, the switching drive circuit for the tiled surface emitting laser 1b of the present embodiment can have the same configuration as the switching drive circuit of the first embodiment shown in FIGS.

  Thus, according to the tiled surface emitting laser 1b of the present embodiment, it is possible to avoid the formation of a light emitting diode at the interface B ′ between the p-type semiconductor layer and the n-type semiconductor layer, and to form the interface A ′. Since light other than the light from the surface emitting laser can be prevented from entering the light receiving element, the amount of light emitted from the surface emitting laser can be detected more accurately. Therefore, the tiled surface emitting laser 1b of the present embodiment can automatically control the output intensity of the surface emitting laser more accurately.

<Third Embodiment>
Next, a tiled surface emitting laser according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a block diagram showing a tiled surface emitting laser and its switching drive circuit according to the third embodiment of the present invention. FIG. 6 is an equivalent circuit diagram of the configuration diagram of FIG. 5 and 6, the same components as those of the tiled surface emitting laser shown in FIG. 2 or 3 are denoted by the same reference numerals. The tiled surface emitting laser 1c of the present embodiment has a structure in which light is not emitted from the diode D in the tiled surface emitting laser 1a of the first embodiment. That is, the tiled surface emitting laser 1c of the present embodiment solves the problem of the diode D (light emitting diode) generated at the interface B between the n-type semiconductor layer 13 and the p-type semiconductor layer 12 of the tiled surface emitting laser 1a. This is another form of the second embodiment.

  The difference between the tiled surface emitting laser 1c of the present embodiment and the tiled surface emitting laser 1a of the first embodiment is that an exposed surface is provided on the upper surface of the n-type semiconductor layer 13 of the tile body. The bias surface 24 is an electrode that is in ohmic contact with the n-type semiconductor layer 13 on the exposed surface. In order to provide the exposed surface, a p-type semiconductor layer 12 c is provided in addition to a partial region (exposed surface) in the entire upper surface of the n-type semiconductor layer 13. The other configuration of the tiled surface emitting laser 1c is the same as that of the tiled surface emitting laser 1a of the first embodiment.

  Then, as shown in FIG. 5, a bias voltage Vdd is applied to the bias electrode 24 and the anode electrode 21 of the tiled surface emitting laser 1c. That is, a wiring for electrically short-circuiting the bias electrode 24 and the anode electrode 21 is provided. This wiring may be provided in the tiled surface emitting laser 1c, or may be provided outside the tiled surface emitting laser 1c. Here, in the diode D (light emitting diode) formed at the interface B, the anode is connected to the anode electrode 21 and the cathode is connected to the bias electrode 24. Therefore, between the anode and cathode of the diode D formed at the interface B, the bias electrode 24 and the anode electrode 21 are short-circuited to be short-circuited, and no current flows through the diode D. . That is, the diode D formed at the interface B can be ignored. Other switching drive circuits for the tiled surface emitting laser 1c of the present embodiment are the same as those of the first embodiment.

  Thus, according to the tiled surface emitting laser 1c of the present embodiment, the diode D (light emitting diode) formed at the interface B between the p-type semiconductor layer 12c and the n-type semiconductor layer 13 can be ignored. Therefore, the tiled surface emitting laser 1c according to the present embodiment can detect the light emission amount of the surface emitting laser VC more accurately, and can automatically control the light intensity of the surface emitting laser VC more accurately.

  Furthermore, in the tiled surface emitting laser 1c of the present embodiment, the diode D formed at the interface B is short-circuited, so that a voltage drop at the diode D is eliminated. Therefore, a larger voltage can be applied to the Schottky diode SD formed at the interface A. Although the applied voltage of the Schottky diode SD is not necessarily high, the selection range of the members and the compositions forming the p-type semiconductor layer 12c and the n-type semiconductor layer 13 can be expanded, and the selection range of the bias voltage Vdd is also Can be spread.

<Fourth embodiment>
Next, a tiled surface emitting laser according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 7 is a schematic cross-sectional view showing a tiled surface emitting laser according to the fourth embodiment of the present invention. In FIG. 7, the same components as those of the tiled surface emitting laser shown in FIG.

  The difference between the tiled surface emitting laser 1d of the present embodiment and the tiled surface emitting laser 1a of the first embodiment is that a second p-type semiconductor layer 14 is provided below the n-type semiconductor layer 13 of the tile body. The second p-type semiconductor layer 14 is provided with a monitoring electrode 23d made of a metal film having an ohmic junction or a Schottky junction over the entire lower surface of the second p-type semiconductor layer 14. Next, the configuration of the tiled surface emitting laser 1d will be specifically described.

  The tile-shaped surface emitting laser 1d has a tile main body and a protrusion provided in a convex shape on the surface of the tile main body. The tile body includes a p-type semiconductor layer 12, an n-type semiconductor layer 13 provided below the p-type semiconductor layer 12, and a second p-type semiconductor layer 14 provided below the n-type semiconductor layer 13. , And the monitor electrode 23d. An anode electrode 21 that is in ohmic contact with the p-type semiconductor layer 12 is provided on the exposed surface of the p-type semiconductor layer 12. The protrusion is composed of an n-type semiconductor 11 and a cathode electrode 22 that is in ohmic contact with the n-type semiconductor 11.

  The p-type semiconductor layer 12 of the tile main body and the n-type semiconductor 11 of the protrusion constitute a surface emitting laser, like the p-type semiconductor 12 and the n-type semiconductor 11 of the first embodiment. However, in the tiled surface emitting laser 1d of the present embodiment, a photodiode (light receiving element) is formed at the interface between the n-type semiconductor layer 13 and the second p-type semiconductor layer 14. The switching drive circuit for the tiled surface emitting laser 1d of this embodiment can be basically the same as that of the first embodiment.

  As a result, according to the tiled surface emitting laser 1d of the present embodiment, the monitoring electrode 23d provided on the second p-type semiconductor layer 14 may be either a Schottky junction or an ohmic junction. Here, when the monitoring electrode 23d is an ohmic junction, the voltage drop generated at the monitoring electrode 23d can be made smaller than in the case of a Schottky junction. Therefore, according to the tiled surface emitting laser 1d of the present embodiment, the bias voltage of the surface emitting laser and the photodiode can be lowered. For example, using a power supply voltage commonly used in integrated circuits, the tiled surface emitting laser 1d of this embodiment can be stably operated without being affected by a temperature change or the like. Also, the ohmic electrode is easier to manufacture than the Schottky electrode. Therefore, according to the present embodiment, it is possible to provide a tiled surface emitting laser that can be more easily reduced in size than conventional ones and can be more easily manufactured.

<Fifth Embodiment>
Next, a tiled surface emitting laser according to a fifth embodiment of the present invention will be described with reference to FIG. FIG. 8 is a block diagram showing a tiled surface emitting laser and its switching drive circuit according to the fifth embodiment of the present invention. In FIG. 8, the same components as those shown in FIG. 1 or FIG.
The tiled surface emitting laser 1e of this embodiment includes a surface emitting laser and a light receiving element that receives a part of the laser light emitted from the surface emitting laser, as in the first embodiment. However, contrary to the first embodiment, the tiled surface emitting laser 1e of the present embodiment is externally applied from the bottom surface of the tile main body using monitor light as laser light emitted in the direction from the tile main body toward the protrusion. The intensity of the laser beam emitted from the laser beam is controlled. Next, the tiled surface emitting laser 1e according to the present embodiment will be specifically described.

  The tiled surface emitting laser 1e includes a tile main body and a protrusion provided in a convex shape on the surface of the tile main body. The protrusion has an n-type semiconductor 13e provided on the upper surface side of the protrusion and a p-type semiconductor 12e adjacent to the n-type semiconductor 13e. The n-type semiconductor 13e corresponds to the n-type semiconductor layer 13 of the first embodiment. The entire upper surface of the n-type semiconductor 13e is provided with a monitor electrode 23 that is an electrode bonded to the n-type semiconductor 13e by a Schottky junction.

The p-type semiconductor 12e of the protrusion corresponds to the p-type semiconductor layer 12 of the first embodiment. The p-type semiconductor 12e has an exposed surface in a ring shape on the surface including the junction surface with the n-type semiconductor 13e. The ring-shaped exposed surface is provided with an anode electrode 21 which is an electrode provided in a ring shape on the exposed surface and which is in ohmic contact with the p-type semiconductor 12e.
The tile main body has an n-type semiconductor layer 11e adjacent to the p-type semiconductor 12e of the protrusion. The n-type semiconductor layer 11e corresponds to the n-type semiconductor 11 of the first embodiment. The n-type semiconductor layer 11e is provided with a cathode electrode 12 that is in ohmic contact with the n-type semiconductor layer 11e. The cathode electrode 22 is disposed at a position that does not overlap with the position of the protrusion in the n-type semiconductor layer 11e of the tile body.

  Next, the switching drive circuit of the tiled surface emitting laser 1e having the above configuration will be described. A bias voltage Vdd is applied to the anode electrode 21. The cathode electrode 22 is connected to the drain of an NMOS transistor 31 serving as switching means. The source of the NMOS transistor 31 is connected to the ground GND via the current control circuit 32. A modulation signal is input to the gate of the NMOS transistor 31. The monitor electrode 23 is connected to the ground GND via the current monitor circuit 33.

  According to the present embodiment, the n-type semiconductor 13e of the protruding portion and the monitoring electrode 23 constitute a photodiode, and the p-type semiconductor 12e of the protruding portion and the n-type semiconductor layer 11e of the tile body portion form a surface emitting laser. Can be configured. Therefore, according to the present embodiment, the light receiving element can be disposed on the upper side of the protrusion, and the emitted light of the surface emitting laser emitted to the protrusion side (the upper surface side of the tile main body) can be monitored. And the light quantity (intensity | strength) of the emitted light of the surface emitting laser radiate | emitted to the bottom face side of a tile main-body part can be controlled by this monitor.

  Furthermore, according to the present embodiment, all of the anode electrode 21, the cathode electrode 22, and the monitor electrode 23 can be disposed on the upper surface side (projection portion side) of the tile-shaped element. Therefore, according to the present embodiment, variations in the electrical wiring connection form between the tile-shaped surface emitting laser 1e and another substrate (final substrate) can be increased. Therefore, according to the present embodiment, it is possible to provide a device that includes the tile-shaped surface emitting laser 1e more simply and with high reliability.

<Manufacturing method>
Next, the tiled surface emitting laser and the device manufacturing method according to the present invention will be described with reference to FIGS. This manufacturing method is based on the epitaxial lift-off (ELO) method. In this manufacturing method, a case where a compound semiconductor device (compound semiconductor element) as a tiled surface emitting laser (micro tile element) is bonded onto the final substrate will be described. A manufacturing method can be applied. Note that the “semiconductor substrate (epitaxial substrate)” in the present embodiment refers to an object made of a semiconductor material, but is not limited to a plate-shaped substrate. "include.

<First step>
FIG. 9 is a schematic cross-sectional view showing the first step of the manufacturing method. In FIG. 9, a substrate 110 is a semiconductor substrate, for example, a gallium arsenide compound semiconductor substrate. A sacrificial layer 111 is provided as the lowest layer in the substrate 110. The sacrificial layer 111 is made of aluminum arsenic (AlAs) and has a thickness of, for example, several hundreds of nanometers.
For example, the functional layer 112 is provided on the sacrificial layer 111. The thickness of the functional layer 112 is, for example, about 1 μm to 10 (20) μm. Then, the semiconductor device 113 is formed in the functional layer 112. The semiconductor device 113 corresponds to components other than the monitor electrode 23 in the tile-shaped surface-emitting laser (for example, the tile-shaped surface-emitting laser 1a) described above. These constituent elements of the semiconductor device 113 can be formed by stacking a plurality of epitaxial layers on the substrate 110. Further, for example, the anode electrode 21 and the cathode electrode 22 in the tiled surface emitting laser 1a shown in FIG.

<Second step>
FIG. 10 is a schematic cross-sectional view showing the second step of the manufacturing method. In this step, the separation groove 121 is formed so as to divide each semiconductor device 113. The separation groove 121 is a groove having a depth that reaches at least the sacrificial layer 111. For example, both the width and the depth of the separation groove are 10 μm to several hundred μm. In addition, the separation groove 121 is a groove that is connected without a dead end so that a selective etching solution described later flows through the separation groove 121. Further, the separation grooves 121 are preferably formed in a lattice shape like a grid.
Further, by setting the interval between the separation grooves 121 to several tens μm to several hundreds μm, the size of each semiconductor device 113 divided and formed by the separation grooves 121 has an area of several tens μm to several hundreds μm square. Shall. As a method for forming the separation groove 121, a method using photolithography and wet etching, or a method using dry etching is used. Further, the separation groove 121 may be formed by dicing the U-shaped groove as long as no crack is generated in the substrate.

<Third step>
FIG. 11 is a schematic cross-sectional view showing the third step of the manufacturing method. In this step, the intermediate transfer film 131 is attached to the surface of the substrate 110 (the semiconductor device 113 side). The intermediate transfer film 131 is a flexible band-shaped film having a surface coated with an adhesive.

<4th process>
FIG. 12 is a schematic cross-sectional view showing the fourth step of the manufacturing method. In this step, a selective etching solution 141 is injected into the separation groove 121. In this step, in order to selectively etch only the sacrificial layer 111, a low concentration hydrochloric acid having high selectivity with respect to aluminum / arsenic is used as the selective etching solution 141.

<5th process>
FIG. 13 is a schematic sectional view showing the fifth step of the manufacturing method. In this step, all of the sacrificial layer 111 is selectively etched and removed from the substrate 110 over a predetermined time after the selective etching solution 141 is injected into the separation groove 121 in the fourth step.

<6th process>
FIG. 14 is a schematic cross-sectional view showing the sixth step of the manufacturing method. When all of the sacrificial layer 111 is etched in the fifth step, the functional layer 112 is separated from the substrate 110. In this step, the functional layer 112 attached to the intermediate transfer film 131 is separated from the substrate 110 by separating the intermediate transfer film 131 from the substrate 110. As a result, the functional layer 112 on which the semiconductor device 113 is formed is divided by the formation of the separation groove 121 and the etching of the sacrificial layer 111, so that a semiconductor element having a predetermined shape (for example, a micro tile shape), that is, a “micro tile element” 161 ”and is held by being attached to the intermediate transfer film 131. That is, the micro tile element 161 is not provided with the monitoring electrode 23 in the tile surface emitting laser 1a shown in FIG. Here, the thickness of the functional layer is preferably 1 μm to 8 μm, for example, and the size (vertical and horizontal) is preferably several tens μm to several hundred μm, for example.

<Seventh step>
FIG. 15 is a schematic sectional view showing the seventh step of the manufacturing method. In this step, the monitoring electrode 23 is provided on the micro tile element 161, and the tile surface emitting laser 1a according to the present invention is completed in the micro tile element 161. Specifically, the entire back surface of the micro tile element 161 attached to the intermediate transfer film 131 is vapor-deposited or sputtered together with the intermediate transfer film 131 to form a thin film such as gold (Au). At this time, a thin film such as Au may be formed between the minute tile-shaped elements 161 in the intermediate transfer film 131. Therefore, it is not necessary to use a mask or the like in this step. Further, since the thin film such as Au is a Schottky junction, there is no need for heat treatment, and it becomes the monitor electrode 23 only by vapor deposition.

<Eighth process>
FIG. 16 is a schematic sectional view showing the eighth step of the manufacturing method. In this step, the micro tile element 161 is aligned to a desired position on the final substrate 171 by moving the intermediate transfer film 131 (to which the micro tile element 161 constituting the tile surface emitting laser 1a is attached). To do. Here, the final substrate 171 is made of, for example, a silicon semiconductor, and electrodes 172 and 174 made of gold (Au) are formed. Further, an adhesive 173 for adhering the micro tile-shaped element 161 is applied on the electrode 174 provided at a desired position on the final substrate 171. The adhesive 173 has conductivity and also serves as an electric wiring member.

<9th process>
FIG. 17 is a schematic sectional view showing the ninth step of the manufacturing method. In this step, the micro tile-like element 161 aligned at a desired position on the final substrate 171 is pressed by the back pressing jig 181 through the intermediate transfer film 131 and joined to the final substrate 171. Here, since the conductive adhesive 173 is applied on the electrode 174 at a desired position, the micro tile-shaped element 161 is adhered to the desired position on the final substrate 171 and the electrode 174 and the electrode 174 are microscopic. The monitor electrode 23 of the tile-shaped element 161 is connected by wiring.

<10th process>
FIG. 18 is a schematic sectional view showing the tenth step of the manufacturing method. In this step, the adhesive force of the intermediate transfer film 131 is lost, and the intermediate transfer film 131 is peeled off from the micro tile-shaped element 161.
The adhesive of the intermediate transfer film 131 is such that the adhesive strength disappears due to ultraviolet (UV) or heat. When a UV curable adhesive is used, the back pressing jig 181 is made of a transparent material, and the adhesive force of the intermediate transfer film 131 is lost by irradiating ultraviolet rays (UV) from the tip of the back pressing jig 181. Let In the case of using a thermosetting adhesive, the back pressing jig 181 may be heated. Alternatively, after the sixth step, the adhesive force may be completely lost by irradiating the entire surface of the intermediate transfer film 131 with ultraviolet rays. Although the adhesive force has disappeared, in reality, the adhesiveness remains slightly, and the micro tile-shaped element 161 is very thin and light and is held by the intermediate transfer film 131.
In this step, an insulating material 181 may be provided on the side surface of the micro tile element 161. The insulating material 181 prevents, for example, the electrical wiring connecting the anode electrode 21 of the micro tile-shaped element 161 and the electrode 172 of the final substrate from being short-circuited to other circuits. The insulating material 181 may be provided by dropping a liquid insulating material by a droplet discharge method and then curing the insulating material.

<11th process>
This step is not shown. In this step, heat treatment or the like is performed, and the fine tile-shaped element 161 is finally bonded to the final substrate 171.

<Twelfth step>
FIG. 19 is a schematic sectional view showing the twelfth step of the manufacturing method. In this step, an electrode (for example, the cathode electrode 21) of the micro tile-shaped element 161 and the electrode 172 on the final substrate 171 are electrically connected by the electric wiring 191, and one LSI chip or the like (circuit device or thin film device) is connected. Finalize.
The electrical wiring 191 uses a droplet discharge method. That is, the conductive liquid material 54 is applied to the wiring region, and then the liquid material 54 is cured to provide the electric wiring 191. Specifically, before the electrical wiring 191 is formed, the surface of the final substrate 171 and the micro tile-shaped element 161 is subjected to a liquid repellent treatment so as to surround the wiring region where the electrical wiring 191 is formed. Here, the anode electrode 21 and the electrode 172 are formed of gold electrodes, and the surface of the final substrate 171 and the minute tile-shaped element 161 is exposed to the vapor of fluorinated alkylsilane (FAS) so as to surround the wiring region. A liquid repellent film made of a self-assembled monomolecular film may be formed. The anode electrode 21 and the electrode 172 are in a lyophilic state. Thereafter, a liquid material 54 containing a conductive material is dropped into the wiring region to apply the liquid material 54 in the wiring region. Thereafter, the liquid material 54 is subjected to a drying process, a sintering process, and the like, thereby forming an electrical wiring 191 made of a conductive film. As a result, a circuit device or thin film device forming one LSI chip or the like is completed.

  Thus, even if the final substrate 171 is, for example, silicon, the tile-shaped element 161 that forms the tile-shaped surface-emitting laser 1a made of gallium arsenide is formed at a desired position on the final substrate 171. It becomes possible to form the semiconductor element forming the surface emitting laser 1a on a substrate made of a material different from that of the semiconductor element. In addition, since most of the tile-shaped surface-emitting laser 1a is completed on the semiconductor substrate and then cut into a fine tile shape, the surface-emitting laser or the like is preliminarily produced before an integrated circuit or the like incorporating the tile-shaped surface-emitting laser 1a is formed. Can be tested and sorted. Further, according to the above manufacturing method, only a functional layer including a micro tile element (surface emitting laser or the like) can be cut from a semiconductor substrate as the micro tile element 161 and mounted on a film for handling. The tile-shaped elements 161 can be individually selected and bonded to the final substrate 171, and the size of the micro-tile-shaped elements 161 that can be handled can be made smaller than that of the conventional mounting technology. Therefore, according to the manufacturing method described above, a surface emitting laser of a tile-shaped element, which is a minute book that can detect the amount of light of the surface-emitting laser without providing a light receiving element separately from the tile-shaped element. The tiled surface emitting laser according to the invention can be easily manufactured.

  Further, according to the above manufacturing method, in the seventh step, the monitor electrode 23 (Schottky electrode) can be formed only by vapor deposition, and there is no need to use a mask in particular. Therefore, the tiled surface emitting laser according to the present invention can be more easily performed. Can be manufactured.

<Electronic equipment>
Next, an example of an electronic apparatus including the tiled surface emitting lasers 1a, 1b, 1c, 1d, and 1e (hereinafter referred to as a tiled surface emitting laser 1) or a device according to the above embodiment will be described. FIG. 20 is a perspective view illustrating an optical interconnection circuit between IC chips, which is an example of the electronic apparatus of the present embodiment and includes the tile-shaped surface emitting laser 1 of the present embodiment. The electronic apparatus according to the present embodiment is an optical interconnection circuit between IC chips that performs optical communication using a tiled surface emitting laser 1 between a plurality of integrated circuit chips (IC chip, LSI chip, etc.) arranged on a substrate. is there. 20 is a modification of the tiled surface emitting laser 1, and in addition to the Schottky diode SD that monitors the light of its surface emitting laser, another light receiving element. May be provided. That is, the tiled surface emitting laser 1 ′ has not only a light emitting function to the outside which is a function of the tiled surface emitting laser 1, but also a function of receiving light from the outside. Further, instead of the tiled surface emitting laser 1 ′, a light receiving element made of a micro tile element may be used.

  A plurality of LSIs (Integrated Circuits) 401a, 401b, 401c are mounted on the upper surface of the substrate 450 corresponding to the final substrate. A plurality of optical waveguides 430 and a plurality of micro tile elements 1 and 1 ′ are attached to the upper surface of the substrate 450. Each LSI 401a, 401b, 401c is made of a semiconductor chip, and is flip-chip mounted on the upper surface of the substrate 450. Each LSI 401a, 401b, 401c may be mounted on the substrate 450 by a method other than flip chip mounting.

  For example, it is assumed that a pair of two micro tile elements 1 and 1 ′ having a light emitting function and a light receiving function are provided at the end of one optical waveguide 430. In other words, two micro tile elements 1 and 1 ′ having a light emitting function and a light receiving function are optically connected by the optical waveguide 430. In addition, the electrodes of the micro tile elements 1 and 1 ′ are electrically connected to neighboring LSIs 401 a, 401 b and 401 c through electrodes provided on the substrate 450. In addition, three or more micro tile elements 1 and 1 ′ may be optically connected to one optical waveguide 430.

  Therefore, for example, an output signal (electrical signal) of the LSI 401a is sent to the nearby minute tile-shaped element 1 via an electrode or the like. The micro tile-like element 1 converts an electrical signal into an optical pulse signal and emits it to the optical waveguide 430. The optical pulse signal is converted into an electric signal by the micro tile-like element 1 ′ arranged at the end of the optical waveguide 430 and in the vicinity of the LSI 401 b, and becomes an input signal of the LSI 401 b.

  According to the electronic apparatus of this embodiment, data transmission and communication between IC chips can be extremely speeded up by an optical signal, laser light from a light source can be automatically output controlled, and can be easily miniaturized between small IC chips. An optical interconnection circuit can be easily realized. In the present embodiment, an optical bus may be formed by connecting a plurality of micro tile elements 1 ′ having a light receiving function to one optical waveguide 430. With such a configuration, for example, the distribution of the clock signal shared by the plurality of LSIs 401a, 401b, and 401c can be performed by the optical waveguide 430. In addition, a plurality of micro tile elements 1 having different emission wavelengths and a plurality of micro tile elements 1 'having different light receiving wavelengths may be connected to one waveguide 430. With such a configuration, for example, wavelength multiplexing optical communication can be easily realized.

  FIG. 21 is an example of an electronic apparatus according to the present embodiment, and is a perspective view illustrating an optical interconnection circuit in an IC chip including the micro tile-like element 1 according to the present embodiment. The electronic apparatus according to this embodiment optically connects a plurality of circuit blocks provided on one integrated circuit chip (IC chip, LSI chip) using the micro tile-like elements 1 and 1 ′. .

  Three circuit blocks 501a, 501b, and 501c are formed on one integrated circuit chip 550 corresponding to the final substrate. The integrated circuit chip 550 is made of a semiconductor chip. The number of circuit blocks formed on the integrated circuit chip 550 is not limited to three, and may be two or more. On the integrated circuit chip 550, a circuit other than the circuit block, an electronic element, or the like may be formed.

  The circuit blocks 501a, 501b, and 501c constitute a CPU, a memory circuit, a video signal processing circuit, a video signal drive circuit, a communication I / O, various interface circuits, an A / D converter, a D / A converter, and the like. For example, the circuit block 501a constitutes a CPU, the circuit block 501b constitutes a first memory circuit, and the circuit block 501c constitutes a second memory circuit. The circuit blocks 501a, 501b, and 501c can be formed on the integrated circuit chip 550 as a bipolar integrated circuit, a MOS integrated circuit, a CMOS integrated circuit, or an SOS (Silicon On Sapphire) integrated circuit.

  The circuit blocks 501a, 501b, and 501c are electrically connected by a metal wiring 531. The micro tile element 1 having a light emitting function is bonded to the circuit block 501a. Each of the circuit blocks 501b and 501c is joined with a micro tile element 1 'having a light receiving function. Each micro tile-like element 1, 1 ′ has, for example, an area of several hundred μm square or less and a thickness of several tens μm, and is attached to the surface of the integrated circuit chip 550 with an adhesive or the like. And Further, each micro tile-like element 1, 1 'is electrically connected to a circuit block (any one of the circuit blocks 501a, 501b, 501c).

  An optical waveguide 530 is also formed on the integrated circuit chip 550. The optical waveguide 530 is made of an optical waveguide material formed in a rod shape over the upper surface of the integrated circuit chip 550, the upper surfaces of the circuit blocks 501a, 501b, and 501c and the upper surface of the metal wiring 531. The thickness (height) of the optical waveguide material is set to a value sufficiently larger than the step formed by the surface of the integrated circuit chip 550 and the circuit blocks 501a, 501b, and 501c or the minute tile-shaped elements 1 and 1 ′ and the metal wiring 531. Is preferred. This is to increase the optical coupling efficiency in the optical waveguide 530.

  As the optical waveguide material, a transparent resin or sol-gel glass can be applied. The optical waveguide material forming the optical waveguide 530 is formed so as to cover each of the micro tile-like elements 1 and 1 ′. Therefore, each micro tile-like element 1, 1 ′ is optically connected by the optical waveguide 530. Furthermore, a light absorption film or a light reflection film for preventing the incidence of disturbance light may be formed on the surface of the optical waveguide material.

  With such a configuration, for example, an electrical signal (data) output from the circuit block 501a constituting the CPU is converted into an optical signal by the micro tile element 1 on the circuit block 501a. The optical signal radiated from the micro tile element 1 enters the optical waveguide 530 and propagates through the optical waveguide 530. This optical signal is converted into an electrical signal by the micro tile element 1 'of each of the circuit block 501b and the circuit block 501c, and is input to each of the circuit block 501b and the circuit block 501c.

  Therefore, according to the present embodiment, the data transmission between the circuit blocks 501a, 501b, and 501c on the integrated circuit chip 550 is extremely accelerated by the optical signal using the micro tile-like elements 1 and 1 ′ and the optical waveguide 530. can do. Therefore, according to the present embodiment, an optical interconnection circuit in an IC chip that is very compact and is not affected by a temperature change or the like can be easily realized.

  The optical signal propagating through the optical waveguide 530 may be a clock signal. For example, a clock signal (optical signal) is radiated from the micro tile element 1 of the circuit block 501a, and the clock signal propagates through the optical waveguide 530 and is input to the micro tile element 1 ′ of the other circuit blocks 501b and 501c. I will do it. With such a configuration, the circuit blocks 501a, 501b, and 501c can be operated at high speed with a clock signal having a higher frequency than in the past. In the present embodiment, the circuit blocks 501a, 501b, and 501c are electrically connected to each other by the metal wiring 531. Thus, signals and power supply that do not need to be transmitted at a relatively high speed can be transmitted via the metal wiring 531.

  Further, in the present embodiment, the optical waveguide 530 is provided on each circuit block 501a, 501b, 501c so as to cross the circuit block 501b. Therefore, the path length of the optical waveguide 530 can be shortened. The optical waveguide 530 can be formed on the integrated circuit chip 550 regardless of whether it is the upper surface of the circuit blocks 501a, 501b, and 501c.

  The optical waveguide 530 may be provided on the surface of the integrated circuit chip 550 so as to bypass the circuit blocks 501a, 501b, and 501c. In this way, the optical waveguide 530 is provided on a flat surface on the surface of the integrated circuit chip 550 even when the step between the surface of the circuit blocks 501a, 501b, and 501c and the surface of the other region is large. The optical coupling efficiency in the transmission process can be increased. The optical waveguide 530 is not limited to a linear shape as shown in FIG. 21, but can be formed in a bent shape, a branched shape, or a loop shape.

  In the embodiment shown in FIG. 21, one micro tile element 1 or one micro tile element 1 ′ is attached to each circuit block 501a, 501b, 501c, and each micro tile element is formed by one optical waveguide 530. 1 and 1 'are connected, but a plurality of micro tile-like elements 1 and 1' may be attached to each circuit block 501a, 501b and 501c. The micro tile-like elements 1 and 1 ′ may be connected by a plurality of optical waveguides 530. By doing so, it is possible to transmit a plurality of optical signals in parallel using a plurality of sets of micro tile elements 1, 1 'and the optical waveguide 530, and it is possible to further increase the data transmission speed. In the embodiment shown in FIG. 21, all the circuit blocks 501a, 501b, and 501c are connected by the optical waveguide 530, but only between some circuit blocks (for example, between the circuit block 501a and the circuit block 501b). You may connect with.

  Furthermore, a plurality of integrated circuit chips 550 shown in FIG. 21 may be mounted on a desired substrate. In this case, it is preferable that the side surfaces of the integrated circuit chips 550 are placed in close contact with each other on the substrate. Each integrated circuit chip 550 is preferably flip-chip mounted. By doing so, a plurality of integrated circuit chips 550 can be compactly mounted on the substrate. Further, by doing so, the integrated circuit chips 550 can be easily connected to each other by the micro tile-like elements 1 and 1 ′ and the optical waveguide 530. Therefore, a large-scale computer system including a plurality of integrated circuit chips 550 can be provided with high performance and high reliability while being compact.

  FIG. 22 is an example of the electronic apparatus of the present embodiment, and is a schematic cross-sectional view of a laminated optical interconnection integrated circuit including the micro tile-shaped element 1 of the present embodiment. This optical interconnection integrated circuit has a structure in which three integrated circuit chips (silicon semiconductor substrates) 601a, 601b, and 601c are stacked and laminated with a transparent adhesive (not shown) such as a resin interposed therebetween. Yes. The integrated circuit chips 601a, 601b, and 601c are obtained by forming an integrated circuit (LSI or the like) on a silicon semiconductor substrate. The integrated circuit chips 601a, 601b, and 601c may be formed by forming thin film transistors (TFTs) on a glass substrate. Further, the surface emitting lasers VC1, VC2, VC3, and VC4 in FIG. 22 are configured by the micro tile element 1. It is assumed that the photodetectors PD1, PD1 ', PD2, PD2', PD3, PD3 ', PD4, and PD4' are each composed of the micro tile-like element 1 '. The shape of these micro tile elements is, for example, a plate shape having a thickness of 1 μm to 20 μm and a vertical and horizontal size of several tens μm to several hundreds μm.

  Two surface emitting lasers VC1 and VC2 and two photodetectors PD3 and PD4 are bonded to the upper surface of the integrated circuit chip 601a at desired positions. That is, the surface emitting lasers VC1 and VC2 and the photodetectors PD3 and PD4 are arranged at arbitrary positions in the integrated circuit, not limited to the peripheral portion on the upper surface of the integrated circuit chip 601a.

  The intervals between the surface emitting lasers VC1 and VC2 and the photodetectors PD3 and PD4 can be made very small. For example, the interval can be several μm. Further, each micro tile-shaped element forming the surface emitting lasers VC1 and VC2 and the photodetectors PD3 and PD4 is bonded to the upper surface of the integrated circuit chip 601a with a transparent adhesive 630. For example, a resin is used as the adhesive 630.

  One surface emitting laser VC3 and three photodetectors PD1, PD2, PD4 'are bonded to the upper surface of the integrated circuit chip 601b. Here, the surface emitting laser VC3 and the photodetectors PD1, PD2, and PD4 'are bonded to the upper surface of the integrated circuit chip 601b with an adhesive 630 having transparency. One surface emitting laser VC4 and three photodetectors PD1 ', PD2', and PD3 'are bonded to the upper surface of the integrated circuit chip 601c. Here, the surface emitting laser VC4 and the photodetectors PD1 ', PD2', PD3 'are bonded to the upper surface of the integrated circuit chip 601c with a transparent adhesive 630.

  The adhesive 630 is preferably provided by a droplet discharge method in which droplets including the adhesive 630 are discharged from an inkjet nozzle (not shown) and applied to the integrated circuit chips 601a, 601b, and 601c. As a result, the amount of the adhesive 630 and the like can be reduced, the design can be easily changed, and the manufacturing cost can be reduced. Also, when the integrated circuit chips 601a, 601b, and 601c are overlapped with an adhesive, it is preferable to apply the adhesive by a droplet discharge method. As a result, the amount of adhesive or the like can be reduced, design changes can be easily handled, and manufacturing costs can be reduced.

  Two photodetectors PD1 and PD1 'are arranged so as to face the emission central axis of the surface emitting laser VC1. Further, two photodetectors PD2 and PD2 'are arranged so as to face the emission central axis of the surface emitting laser VC2. Further, two photodetectors PD3 and PD3 'are arranged so as to face the emission central axis of the surface emitting laser VC3. Two photodetectors PD4 and PD4 'are arranged so as to face the emission central axis of the surface emitting laser VC4. Desirably, the surface emitting laser VC and the photo detector are arranged such that the light receiving central axes of the two photodetectors PD and PD ′ disposed opposite to the surface emitting lasers are on the light emitting center axis of each surface emitting laser VC. PD and PD ′ are preferably arranged.

The surface emitting laser VC1 emits laser light having a first wavelength, the surface emitting laser VC2 emits laser light having a second wavelength, the surface emitting laser VC3 emits laser light having a third wavelength, and the surface emitting laser VC4 A laser beam having a fourth wavelength is emitted. Here, the first to fourth wavelengths are, for example, 1.1 μm or more when the integrated circuit chips 601a, 601b, and 601c are formed of a silicon semiconductor substrate. Thereby, the laser light emitted from the surface emitting lasers VC1, VC2, VC3, and VC4 can be transmitted through the integrated circuit chips 601a, 601b, and 601c. For example, the first wavelength is 1.20 μm, the second wavelength is 1.22 μm, the third wavelength is 1.24 μm, and the fourth wavelength is 1.26 μm.
Even light with a wavelength of 1.1 μm or less can be transmitted through a glass substrate. Therefore, when the integrated circuit chips 601a, 601b, and 601c are formed using a glass substrate, the first to fourth wavelengths can be set to 1.1 μm or less. For example, the first wavelength is 0.79 μm, the second wavelength is 0.81 μm, the third wavelength is 0.83 μm, and the fourth wavelength is 0.85 μm.

  Each of the photodetectors PD1, PD1 ', PD2, PD2', PD3, PD3 ', PD4, and PD4' preferably has wavelength selectivity. For example, the photodetectors PD1 and PD1 ′ detect only the first wavelength light, the photodetectors PD2 and PD2 ′ detect only the second wavelength light, the photodetectors PD3 and PD3 ′ detect only the third wavelength light, The photodetectors PD4 and PD4 ′ detect only the light having the fourth wavelength. Further, a thin film having wavelength selectivity may be provided on the upper or lower surface of each of the photodetectors PD1, PD1 ', PD2, PD2', PD3, PD3 ', PD4, and PD4' to provide a light receiving element having wavelength selectivity.

  Further, it is preferable that the upper surfaces of the surface emitting lasers VC1 and VC2 and the photodetectors PD3 and PD4 are covered with a non-transparent member. The lower surfaces of the photodetectors PD1 ', PD2', PD3 'and the surface emitting laser VC4 are preferably covered with a non-transparent member. Thereby, the noise by stray light can be suppressed.

  With the above configuration, the first wavelength laser light emitted downward from the surface emitting laser VC1 is integrated with the adhesive 630 between the surface emitting laser VC1 and the integrated circuit chip 601a, the integrated circuit chip 601a, and the integrated circuit chip 601a. The adhesive between the circuit chips 601b is transmitted and incident on the photodetector PD1, and further, the photodetector PD1, the adhesive 630 between the photodetector PD1 and the integrated circuit chip 601b, the integrated circuit chip 601b, and the integrated circuit chip 601b and the integrated circuit chip. It passes through the adhesive between 601c and enters the photodetector PD1 ′.

  The second wavelength laser light emitted downward from the surface emitting laser VC2 is an adhesive 630 between the surface emitting laser VC2 and the integrated circuit chip 601a, and between the integrated circuit chip 601a and the integrated circuit chip 601a and the integrated circuit chip 601b. And is incident on the photodetector PD2, and further, the photodetector PD2, the adhesive 630 between the photodetector PD2 and the integrated circuit chip 601b, the integrated circuit chip 601b, and the adhesion between the integrated circuit chip 601b and the integrated circuit chip 601c. The light passes through the material and enters the photodetector PD2 ′.

  The third wavelength laser light emitted upward from the surface emitting laser VC3 is an adhesive between the integrated circuit chip 601b and the integrated circuit chip 601a, and between the integrated circuit chip 601a and the integrated circuit chip 601a and the photodetector PD3. The light passes through the adhesive 630 and enters the photodetector PD3. The laser light of the third wavelength emitted downward from the surface emitting laser VC3 is the adhesive 630 between the surface emitting laser VC3 and the integrated circuit chip 601b, the integrated circuit chip 601b, and between the integrated circuit chip 601b and the integrated circuit chip 601c. And then enters the photodetector PD3 ′.

  The fourth wavelength laser light emitted upward from the surface emitting laser VC4 is an adhesive between the integrated circuit chip 601c and the integrated circuit chip 601b, and between the integrated circuit chip 601b and the integrated circuit chip 601b and the photodetector PD4 ′. And then enters the photodetector PD4 ′, and further, the photodetector PD4 ′, the adhesive between the integrated circuit chip 601b and the integrated circuit chip 601a, the integrated circuit chip 601a, and between the integrated circuit chip 601a and the photodetector PD4. The light passes through the adhesive 630 and enters the photodetector PD4.

  Therefore, the optical signal output as the first wavelength laser beam from the surface emitting laser VC1 is received almost simultaneously by the photodetectors PD1 and PD1 '. The optical signal output as the second wavelength laser light from the surface emitting laser VC2 is received substantially simultaneously by the photodetectors PD2 and PD2 '. The optical signal output as the third wavelength laser light from the surface emitting laser VC3 is received almost simultaneously by the photodetectors PD3 and PD3 '. The optical signal output as the fourth wavelength laser light from the surface emitting laser VC4 is received almost simultaneously by the photodetectors PD4 and PD4 '.

  Therefore, bidirectional communication can be performed between the integrated circuit chip 601a, the integrated circuit chip 601b, and the integrated circuit chip 601c by simultaneously transmitting and receiving four optical signals having the first to fourth wavelengths in parallel. In other words, the surface emitting lasers VC1, VC2, VC3, VC4 and the photodetectors PD1, PD2, PD3, PD4, PD1 ′, PD2 ′, PD3 ′, PD4 ′ serve as signal transmission / reception means of the optical bus. The four optical signals having the wavelengths become the transmission signals of the optical bus.

Accordingly, the optical interconnection integrated circuit according to the present embodiment has an optical bus that transmits and receives a plurality of optical signals in parallel between the three integrated circuit chips 601a, 601b, and 601c stacked. Signal transmission speed can be increased and the following problems occur when electrical signals are transmitted and received using metal wiring 1) Deviation (skew) of signal transmission timing between wirings
2) A large amount of power is required when transmitting high-frequency signals. 3) The degree of freedom in wiring layout is limited, making it difficult to design. 4) Impedance matching is required. 5) Countermeasures against earth noise and electromagnetic induction noise are required. I can deal with it.

  Furthermore, in the optical interconnection integrated circuit of this embodiment, the micro tile-like element 1 forming the surface emitting lasers VC1, VC2, VC3, and VC4 can automatically control the output of the laser light without providing a separate light receiving element. Since the size can be reduced, it is possible to easily provide an optical interconnection circuit between IC chips which is extremely fine and can avoid the influence of temperature and the like.

  Furthermore, since the optical interconnection integrated circuit of the present embodiment uses a plurality of laser beams serving as optical bus communication signals at different wavelengths, a plurality of sets of optical signal transmission / reception including a light emitting element and a light receiving element as one set. Even if the means are arranged very close to each other, it is possible to prevent interference due to stray light or the like, and further reduce the size of the apparatus. Furthermore, since the optical interconnection integrated circuit of the present embodiment uses a surface emitting laser as a light emitting element, the communication speed can be further increased and a plurality of integrated circuit chips stacked in a multilayer structure can be transmitted. The laser beam emitting means (transmitting means) can be easily formed. Furthermore, the optical interconnection integrated circuit of this embodiment can further prevent interference due to stray light and the like by using a light receiving element (photo detector) having wavelength selectivity, and can further downsize the apparatus. .

<Specific examples of electronic devices>
Next, a specific example of an electronic apparatus provided with the micro tile element 1 or device of the above embodiment will be described next.
A device including the micro tile-like element 1 of the above embodiment can be widely applied to devices using laser light. Therefore, as application circuits or electronic devices equipped with these devices, optical interconnection circuits, optical fiber communication modules, laser printers, laser beam projectors, laser beam scanners, linear encoders, rotary encoders, displacement sensors, pressure sensors, Examples include a gas sensor, a blood flow sensor, a fingerprint sensor, a high-speed electrical modulation circuit, a wireless RF circuit, a mobile phone, and a wireless LAN.

  FIG. 23A is a perspective view showing an example of a mobile phone. In FIG. 23A, reference numeral 1000 denotes a mobile phone body using the micro tile element 1 or device as a part of signal transmission means or display means, and reference numeral 1001 denotes a display portion. FIG. 23B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 23B, reference numeral 1100 indicates a watch body using the micro tile element 1 or device as a part of signal transmission means or display means, and reference numeral 1101 indicates a display unit. FIG. 23C is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 23C, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, and reference numeral 1204 denotes an information processing apparatus using the micro tile-like element 1 or device as part of signal transmission means or display means. A main body, reference numeral 1206 denotes a display unit.

  Since the electronic apparatus shown in FIG. 23 includes the micro tile-shaped element 1 or device according to the above-described embodiment, it is possible to automatically control the output of the laser light from the light source, and to provide an inexpensive electronic apparatus that can be easily downsized. it can.

  The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention, and the specific materials and layers mentioned in the embodiment can be added. The configuration is merely an example, and can be changed as appropriate.

1 is a schematic cross-sectional view of a tiled surface emitting laser according to a first embodiment of the present invention. It is a block diagram of the same tile-shaped surface emitting laser and its switching drive circuit. FIG. 3 is an equivalent circuit diagram for the configuration diagram of FIG. 2. It is a schematic cross section of the tile-shaped surface emitting laser according to the second embodiment of the present invention. It is a block diagram of the tile-shaped surface emitting laser which concerns on 3rd Embodiment of this invention, and its switching drive circuit. FIG. 6 is an equivalent circuit diagram for the configuration diagram of FIG. 5. It is a schematic cross section of the tile-shaped surface emitting laser which concerns on 4th Embodiment of this invention. It is a block diagram of the tile-shaped surface emitting laser which concerns on 5th Embodiment of this invention, and its switching drive circuit. It is sectional drawing which shows the 1st process of the manufacturing method which concerns on embodiment of this invention. It is sectional drawing which shows the 2nd process of the manufacturing method same as the above. It is sectional drawing which shows the 3rd process of the manufacturing method same as the above. It is sectional drawing which shows the 4th process of the manufacturing method same as the above. It is sectional drawing which shows the 5th process of the manufacturing method same as the above. It is sectional drawing which shows the 6th process of the manufacturing method same as the above. It is sectional drawing which shows the 7th process of the manufacturing method same as the above. It is sectional drawing which shows the 8th process of the manufacturing method same as the above. It is sectional drawing which shows the 9th process of the manufacturing method same as the above. It is sectional drawing which shows the 10th process of the manufacturing method same as the above. It is sectional drawing which shows the 12th process of the manufacturing method same as the above. It is a perspective view which shows the optical interconnection circuit between IC chips provided with the tile-shaped surface emitting laser of this invention. It is a perspective view which shows the optical interconnection circuit in IC chip provided with the tile-shaped surface emitting laser of this invention. It is a schematic sectional drawing of the optical interconnection integrated circuit of the laminated structure provided with the tile-shaped surface emitting laser of this invention. It is a figure which shows the specific example of the electronic device provided with the tile-shaped surface emitting laser of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1a, 1b, 1c, 1d, 1e ... Tile surface emitting laser, 11 ... n-type semiconductor, 11e ... n-type semiconductor layer, 12, 12c ... p-type semiconductor layer, 12a ... 1st p-type semiconductor layer, 12b ... Second p-type semiconductor layer, 12e ... p-type semiconductor, 13 ... n-type semiconductor layer, 13a ... first n-type semiconductor layer, 13b ... second n-type semiconductor layer, 13e ... n-type semiconductor, 14 ... second p-type semiconductor layer 21 ... Anode electrode, 22 ... Cathode electrode, 23,23d ... Monitor electrode, 24 ... Bias electrode, 31 ... NMOS transistor, 32 ... Current control circuit, 33 ... Current monitor circuit, A, A ', B, B '... Interface, D ... Diode, Im ... Monitor current, SD ... Schottky diode, VC ... Surface emitting laser

Claims (6)

A semiconductor device comprising a surface emitting laser and a light receiving element that receives at least part of light emitted from the surface emitting laser,
The surface-emitting laser includes a first DBR mirror made of a p-type semiconductor layer, a second DBR mirror made of an n-type semiconductor layer, an active layer provided between the first DBR mirror and the second DBR mirror, Have
The light receiving element includes an n-type semiconductor layer formed on a surface opposite to the surface on which the active layer of the first DBR mirror is provided, and a metal film having a Schottky junction with the n-type semiconductor layer. And
The interface between the first DBR mirror and the n-type semiconductor layer is provided in an indirect transition semiconductor layer . A semiconductor device comprising a surface emitting laser and a light receiving element that receives at least part of light emitted from the surface emitting laser,
The surface-emitting laser includes a first DBR mirror made of a p-type semiconductor layer, a second DBR mirror made of an n-type semiconductor layer, an active layer provided between the first DBR mirror and the second DBR mirror, Have
The light receiving element includes an n-type semiconductor layer formed on a surface opposite to the surface on which the active layer of the first DBR mirror is provided, and a metal film having a Schottky junction with the n-type semiconductor layer. And
The interface between the first DBR mirror and the n-type semiconductor layer is a p-type Al _X Ga _1-X As film (X ≧ 0.4) formed on the n-type semiconductor layer side of the first DBR mirror. A semiconductor element comprising a junction interface with an n-type Al _X Ga _1-X As film (where X ≧ 0.4) formed on the first DBR mirror side of the n-type semiconductor layer . An anode electrode that is in ohmic contact with the first DBR mirror is provided on the surface of the first DBR mirror on which the active layer is provided,
3. The semiconductor according to claim 1 , wherein a cathode electrode that is in ohmic contact with the second DBR mirror is provided on a surface opposite to the surface on which the active layer of the second DBR mirror is provided. element.   4. The semiconductor element according to claim 1, wherein the n-type semiconductor layer is provided with a bias electrode which is an electrode in ohmic contact with the n-type semiconductor layer. 5. . A device comprising the semiconductor element according to claim 3 or 4 ,
A bias circuit for applying a bias voltage to the anode electrode;
A connected switching circuit connected to the cathode electrode;
A current monitor circuit for detecting a current flowing out of the metal film;
A current control circuit for controlling the amount of current flowing through the semiconductor element based on the current value detected by the current monitor circuit;
Device, comprising the. An electronic apparatus comprising the device according to claim 5 .

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