JP3058077B2 - Semiconductor light emitting and receiving device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting and emitting device in which a vertical cavity surface emitting laser and a light receiving element are hybridly or monolithically integrated.

[0002]

2. Description of the Related Art A vertical cavity surface emitting laser having a resonator perpendicular to a substrate is capable of forming a resonator by an on-wafer process and thus has high mass productivity. It has a number of advantages, such as easy conversion. However, when a chip is die-bonded by a normal method, there is a problem that output light can be extracted only in one direction. Since the output light power from the laser changes depending on the ambient temperature, etc., monitor the output light power,
It is common to control the drive current. In conventional edge-emitting semiconductor lasers, output light can be extracted from both end faces of the chip, so one could be coupled to an optical fiber and used for signal transmission, and the other could be used to monitor output light power. . On the other hand, in order to monitor the output light power with a surface emitting laser, output light from one direction must be partially branched, and extra optical components are required.

A configuration for solving this problem is described in Japanese Patent Application Laid-Open No. 3-222384. Figure 2
It is shown in FIG. In FIG. 21, reference numeral 2101 denotes a surface emitting laser chip, reference numeral 2102 denotes a submount, and reference numeral 2103 denotes a monitor photodiode. That is, the above problem is solved by forming the monitoring photodiode 2103 in the submount 2102 to which the surface emitting laser chip 2101 is die-bonded. However, this publication does not describe a specific method for die-bonding the surface emitting laser chip 2101 to the submount 2102. Generally, metal solder is used when the laser chip is die-bonded to the submount. In this case, it is apparent that the output light from the surface emitting laser chip 2101 is shielded by the metal solder and does not enter the monitor photodiode 2103. It is.

Further, in a configuration in which the light receiving element is mounted on the same package as the surface emitting laser or integrated on the same substrate, in addition to the use as the above-mentioned monitor photodiode, independent light detection is performed by the light receiving element. There is also a use to do. An example of this is an optical pickup described in, for example, JP-A-64-43822. This is shown in FIG. In FIG. 22, 22
01 is a semiconductor substrate, 2202 is a surface emitting laser, 2203
Is a light receiving element, 2204 is a glass substrate, 2205 and 2
206 is a first and second hologram lens, 2207
Is an optical disk. The output light 2208 emitted from the surface emitting laser 2202 is applied to a first hologram lens 2205.
Then, the reflected light 2209 is collected by the second hologram lens 2206 and enters the light receiving element 2203. That is, according to this configuration, a very compact optical pickup can be realized.

Further, it is known that an optical bistable element can be formed by monolithically integrating a surface emitting laser and a light receiving element. This is the case, for example, in Japanese Patent Application No. 7-16.
No. 9046. This is shown in FIG. In FIG. 23, reference numeral 2301 denotes a semiconductor substrate, 2302 denotes a surface emitting laser, 2303 denotes a phototransistor, and 2304 denotes a semiconductor buffer structure. The surface emitting laser 2302 includes a lower reflector 2305, an active layer 2306, and an upper reflector 2306.
307. On the other hand, the phototransistor 2303 includes a collector 2308, a base 2309, and an emitter 23.
Consists of ten. In addition, the semiconductor buffer structure 2304 is made of InGaAs whose composition ratio changes continuously or stepwise, and plays a role of alleviating lattice mismatch between a crystal forming a phototransistor and a crystal forming a surface emitting laser.

In this configuration, the surface emitting laser 2302 and the phototransistor 2303 are electrically connected in series and function as an optical bistable element. Optical bistable elements
(1) Even if a voltage equal to or higher than the minimum bias voltage (holding voltage) that can be turned on is applied, no current flows through the phototransistor 2303, and the surface emitting laser 2302 does not emit light (off state). With the applied voltage kept at or above the holding voltage, the input light 2311
, An electric current flows, the surface emitting laser 2302 emits the output light 2312 (on state), and (3) the surface emitting laser 2302 emits the output light 2312 even when the input light 2311 is stopped while the applied voltage is kept at the holding voltage or more. Since the phototransistor 2303 receives the emitted light, the on state is maintained, and (4) the operation returns to the off state when the applied voltage is reduced below the holding voltage.

[0007]

A first problem to be solved by the present invention is that a surface emitting laser and a light receiving element for monitoring output light from the surface emitting laser are mounted on the same package or integrated on the same substrate. The purpose of the present invention is to provide a specific configuration when performing the above. As described in the above related art, a technique for forming a monitor photodiode in a submount for die-bonding a surface emitting laser chip has already been disclosed. The method remains undisclosed. According to the present invention, the surface emitting laser and the light receiving element for monitoring can be mounted on the same package or integrated on the same substrate by a simple method.

[0008] A second problem to be solved by the present invention is as follows.
A light-receiving element that performs independent light detection independently of the output from the surface-emitting laser, and a surface-emitting laser mounted on the same package or integrated on the same substrate, and output light from the surface-emitting laser and input light to the light-receiving element Is to provide a configuration for propagating the same optical fiber. As described in the above related art, a configuration of an optical pickup in which a surface emitting laser and an independent light receiving element are integrated has already been disclosed. However, with this configuration, it is difficult to make the output light from the surface emitting laser and the input light to the light receiving element propagate through the same optical fiber. Because the difference between the incident angle of the input light on the optical disk and the output angle of the output light from the optical disk is large,
This is because even if an optical fiber is placed instead of the optical disk, both the input light and the output light cannot propagate through the optical fiber. According to the present invention, a surface emitting laser and an independent light receiving element are mounted on the same package or integrated on the same substrate, and output light from the surface emitting laser and input light to the light receiving element propagate through the same optical fiber. Configuration can be realized.

A third problem to be solved by the present invention is as follows.
An object of the present invention is to provide a configuration of an optical bistable element in which a surface emitting laser and a light receiving element are hybridly integrated. The optical bistable device based on monolithic integration described in the above prior art has a laminated structure of an extremely large number of semiconductor layers. Therefore, a great deal of time is required for crystal growth. In addition, since the laminated structure is etched into a mesa shape, it is difficult to form a wiring crossing the mesa side surface, which is indispensable in an actual device. According to the present invention, since the surface emitting laser and the light receiving element are hybrid-integrated to form an optical bistable element, individual devices can be easily manufactured, and lattice mismatch between materials of the surface emitting laser and the light receiving element. Even so, the semiconductor buffer structure becomes unnecessary.

[0010]

According to the present invention, in order to solve the above-mentioned problems , a first half having a first main surface and a second main surface is provided.
A conductive substrate; a third main surface and a fourth main surface;
The first semiconductor so that the third main surface faces the main surface;
A second semiconductor substrate fixed on the substrate, and the third principal surface
A surface emitting laser formed on the surface emitting laser;
A first light receiving element formed on the first main surface,
Formed outside the first light receiving element on the first main surface;
The second light receiving element and the fourth main
A first output light emitted across the surface and the surface emitting laser;
Second light emitted from the laser and incident on the first light receiving element.
The output light and the second light transmitted through the second semiconductor substrate.
A semiconductor light receiving / emitting device having input light incident on a light receiving element is configured.

[0011]

[0012]

[0013]

[0014]

[0015]

[0016]

[0017]

[0018]

[0019]

[0020]

[0021]

[0022]

[0023]

[0024]

[0025]

[0026]

[0027]

[0028]

[0029]

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS.

Embodiment 1 FIG. 1 is a sectional view of a semiconductor light emitting and receiving device. First semiconductor substrate 1 made of p-type Si
01 has a first main surface 102 and a second main surface 103, and G
The second semiconductor substrate 104 made of aAs
5 and a fourth main surface 106. Second semiconductor substrate 1
Numeral 04 is fixed on the first semiconductor substrate 101 such that the third main surface 105 is in contact with the first main surface 102. On the third main surface 105 of the second semiconductor substrate 104, p-type AlAs
Reflector 1 composed of alternately laminated multilayer films of GaAs and p-type GaAs
07, an active layer 108 in which an InGaAs well layer is sandwiched between GaAs barrier layers, and an upper reflector 109 composed of an alternately laminated multilayer film of n-type AlAs and n-type GaAs. The surface emitting laser 110 is formed by mesa-etching 108.
On the other hand, on the first main surface 102 of the first semiconductor substrate 101, there are an epi layer 111 made of low-concentration p-type Si and a diffusion layer 112 in which an n-type impurity is diffused. I have. The second semiconductor substrate 1 is arranged such that the surface emitting laser 110 and the light receiving element 113 are arranged to face each other.
04 and the first semiconductor substrate 101 are aligned.
From the surface emitting laser 110 to the first
Output light 114 is emitted from the core 1 of the optical fiber 115.
Light is incident on the light source 16. Further, the second output light 117 is emitted from the surface emitting laser 110 in a direction opposite to the first output light 114 and enters the light receiving element 113.

First main surface 102 of first semiconductor substrate 101
A first insulating film 118 is deposited thereon, and a wiring 119 is formed thereon. Further, the second semiconductor substrate 10
The second insulating film 120 is deposited on the third main surface 105 of the fourth, and the first and second electrodes 121 and 122 are formed thereon. First and second electrodes 121, 122
Are a positive electrode and a negative electrode of the surface emitting laser 110. These first and second electrodes 121 and 122 are connected to a wiring 119.
And is fixed by the resin 123. Since the resin 123 is transparent, the second output light 117 emitted from the surface emitting laser 110 enters the light receiving element 113 without being blocked. Further, third and fourth electrodes 124 and 125 are formed as a positive electrode and a negative electrode of the light receiving element 113. On the other hand, a guide hole 126 is formed on the fourth main surface 106 of the second semiconductor substrate 104, and an optical fiber 115 is inserted therein. The guide hole 126 is formed at a portion where the first output light 114 crosses the fourth main surface 106, and the optical fiber 115 can be aligned by inserting the optical fiber 115 into the guide hole 126.

With the above configuration, the surface emitting laser 110
Then, the light receiving element 113 for monitoring the output light from the surface emitting laser 110 can be hybrid-integrated. The second semiconductor substrate 104 on which the surface emitting laser is formed
And first semiconductor substrate 101 on which light receiving element 113 is formed
Is fixed by the transparent resin 123, so that not only the mounting is easy, but also the second output light 1 for the monitor.
17 is not shaded. Further, a guide hole 126 is formed on the fourth main surface 106 of the second semiconductor substrate 104, so that the optical fiber 115 can be easily aligned.

(Embodiment 2) FIG. 2 is a sectional view of a semiconductor light emitting and receiving device. First semiconductor substrate 2 made of p-type Si
01 has a first main surface 202 and a second main surface 203, and G
The second semiconductor substrate 204 made of aAs is formed on the third main surface 20.
5 and a fourth main surface 206. Second semiconductor substrate 2
04 is fixed on the first semiconductor substrate 201 such that the third main surface 205 is in contact with the first main surface 202. On the third main surface 205 of the second semiconductor substrate 204, p-type AlAs
Reflector 2 composed of alternately laminated multilayer films of GaAs and p-type GaAs
07, an active layer 208 in which an InGaAs well layer is sandwiched between GaAs barrier layers, and an upper reflector 209 composed of an alternately laminated multilayer film of n-type AlAs and n-type GaAs. Surface emitting laser 210 by mesa etching
Are formed. On the other hand, on the first main surface 202 of the first semiconductor substrate 201, an epitaxial layer 2 made of low-concentration p-type Si is formed.
11 and a diffusion layer 212 in which an n-type impurity is diffused, and a light receiving element 213 is formed by these. The second semiconductor substrate 204 and the first semiconductor substrate 201 are aligned such that the surface emitting laser 210 and the light receiving element 213 are arranged to face each other. From the surface emitting laser 210 to the fourth main surface 20
The output light 214 is emitted across the optical fiber 21 and the optical fiber 21.
5 core 216. Further, input light 217 is emitted from the core 216 of the optical fiber 215, passes through the second semiconductor substrate 204, and enters the light receiving element 213.

First main surface 202 of first semiconductor substrate 201
A first insulating film 218 is deposited thereon, and a wiring 219 is formed thereon. Further, the second semiconductor substrate 20
The second insulating film 220 is deposited on the third main surface 205 of No. 4, and the first and second electrodes 221 and 222 are formed thereon. First and second electrodes 221, 222
Are a positive electrode and a negative electrode of the surface emitting laser 210. These first and second electrodes 221 and 222 are connected to a wiring 219.
And is fixed by the resin 223. Further, third and fourth electrodes 224 and 225 are formed as a positive electrode and a negative electrode of the light receiving element 213. on the other hand,
A guide hole 226 is formed on the fourth main surface 206 of the second semiconductor substrate 204, and an optical fiber 215 is inserted therein.

With the above configuration, the surface emitting laser 210 for emitting the output light 214 toward the optical fiber 215 and the light receiving element 213 for receiving the input light 217 incident from the optical fiber 215 can be hybrid-integrated. In this configuration, the output light from the surface emitting laser 210 is not emitted to the light receiving element side. Further, the area of the lower reflector 207 is made smaller than the cross-sectional area of the input light 217 at a position where the input light 217 crosses the lower reflector 207. This is to prevent the input light 217 from being reflected by the lower reflector 207. Since the area of the active layer 208 and the upper reflector 209 is smaller than the area of the lower reflector 207, the input light 217 transmitted around the surface emitting laser 210 enters the light receiving element 213. Note that the output light 214 and the input light 217 have wavelengths that are not absorbed by the second semiconductor substrate 204. That is, when the second semiconductor substrate 204 is made of GaAs, the wavelengths of the output light 214 and the input light 217 are set to 0.9 μm or more. Also, the input light 2
Since 17 needs to be a wavelength that can be absorbed by the first semiconductor substrate 201, when the first semiconductor substrate 201 is made of Si, the wavelength of the input light 217 is set to 1.1 μm or less.

(Embodiment 3) FIG. 3 is a sectional view of a semiconductor light emitting and receiving device. First semiconductor substrate 3 made of p-type Si
01 has a first main surface 302 and a second main surface 303, and G
The second semiconductor substrate 304 made of aAs is formed on the third main surface 30.
5 and a fourth main surface 306. Second semiconductor substrate 3
04 is fixed on the first semiconductor substrate 301 such that the third main surface 305 is in contact with the first main surface 302. On the third main surface 305 of the second semiconductor substrate 304, p-type AlAs
Reflector 3 composed of alternately laminated multilayer films of GaAs and p-type GaAs
07, an active layer 308 having a structure in which an InGaAs well layer is sandwiched between GaAs barrier layers, and an upper reflector 309 composed of an alternately laminated multilayer film of n-type AlAs and n-type GaAs. The surface-emitting laser 310 is formed by mesa etching of 308.
On the other hand, on the first main surface 302 of the first semiconductor substrate 301, there are an epi layer 311 made of low-concentration p-type Si and a diffusion layer 312 in which an n-type impurity is diffused. I have. The second semiconductor substrate 3 is arranged such that the surface emitting laser 310 and the light receiving element 313 are opposed to each other.
04 and the first semiconductor substrate 301 are aligned.
Output light 314 is emitted from the surface emitting laser 310 across the fourth main surface 306 and enters the core 316 of the optical fiber 315. Further, input light 317 is emitted from the core 316 of the optical fiber 315, passes through the second semiconductor substrate 304, and enters the light receiving element 313.

First main surface 302 of first semiconductor substrate 301
A first insulating film 318 is deposited thereon, and a wiring 319 is formed thereon. Further, the second semiconductor substrate 30
The second insulating film 320 is deposited on the third main surface 305 of No. 4, and the first and second electrodes 321 and 322 are formed thereon. First and second electrodes 321 and 322
Are a positive electrode and a negative electrode of the surface emitting laser 310. These first and second electrodes 321 and 322 are connected to a wiring 319.
And is fixed by a resin 323. Further, third and fourth electrodes 324 and 325 are formed as a positive electrode and a negative electrode of the light receiving element 313. on the other hand,
A guide hole 326 is formed on the fourth main surface 306 of the second semiconductor substrate 304, into which an optical fiber 315 is inserted.

With the above configuration, the surface emitting laser 310 that emits the output light 314 toward the optical fiber 315 and the light receiving element 313 that receives the input light 317 incident from the optical fiber 315 can be hybrid-integrated. In this configuration, the output light from the surface emitting laser 310 is not emitted to the light receiving element side. Further, the input light 317 and the output light 31
4 have different wavelengths, and the lower reflector 3 for the input light 317
07 reflect the lower reflector 30 for output light 314.
7 is lower than the reflectance. That is, in the second embodiment, the input light 317 transmitted through the periphery of the lower reflector 307 enters the light receiving element 313.
07 is transparent to the input light 317,
17 is incident on the light receiving element 313. For example, if the thickness of the alternately laminated multilayer film of the lower reflector 307 is set so that the wavelength of the output light 314 becomes 0.9 μm, the input light having the wavelength of 1.0 μm easily transmits through the lower reflector 307. be able to.

(Embodiment 4) FIG. 4 is a sectional view of a semiconductor light emitting and receiving device. First semiconductor substrate 4 made of p-type Si
01 has a first main surface 402 and a second main surface 403, and G
The second semiconductor substrate 404 made of aAs is formed on the third main surface 40.
5 and a fourth main surface 406. Second semiconductor substrate 4
04 is fixed on the first semiconductor substrate 401 such that the third main surface 405 is in contact with the first main surface 402. On the third main surface 405 of the second semiconductor substrate 404, p-type AlAs
Reflector 4 composed of alternately laminated multilayer films of GaAs and p-type GaAs
07, an active layer 408 having a structure in which an InGaAs well layer is sandwiched between GaAs barrier layers, and an upper reflector 409 composed of an alternately laminated multilayer film of n-type AlAs and n-type GaAs. 408 and the lower reflector 407 are mesa-etched to form a surface-emitting laser 410.
Are formed. On the other hand, on the first main surface 402 of the first semiconductor substrate 401, an epitaxial layer 4 made of low-concentration p-type Si is formed.
11 and a diffusion layer 412 in which an n-type impurity is diffused, and a light receiving element 413 is formed by these. The second semiconductor substrate 404 and the first semiconductor substrate 401 are aligned so that the surface emitting laser 410 and the light receiving element 413 are arranged to face each other. From the surface emitting laser 410 to the fourth main surface 40
6, the first output light 414 is emitted and enters the core 416 of the optical fiber 415. Further, the second output light 417 is emitted from the surface emitting laser 410 in a direction opposite to the first output light 414 and enters the light receiving element 413. Further, the input light 418 is input from the core 416 of the optical fiber 415.
Are emitted, pass through the second semiconductor substrate 404, and enter the light receiving element 413.

First main surface 402 of first semiconductor substrate 401
A first insulating film 419 is deposited thereon, and a wiring 420 is formed thereon. Further, the second semiconductor substrate 40
The second insulating film 421 is deposited on the fourth third main surface 405, and the first and second electrodes 422 and 423 are formed thereon. First and second electrodes 422, 423
Are a positive electrode and a negative electrode of the surface emitting laser 410. These first and second electrodes 422 and 423 are connected to a wiring 420
And is fixed by a resin 424. Further, third and fourth electrodes 425 and 426 are formed as a positive electrode and a negative electrode of the light receiving element 413. on the other hand,
A guide hole 427 is formed on the fourth main surface 406 of the second semiconductor substrate 404, and an optical fiber 415 is inserted therein.

With the above configuration, the surface emitting laser 410 that emits the first output light 414 toward the optical fiber 415
And the second output light 4 emitted from the surface emitting laser 410
17 and input light 418 incident from optical fiber 415
Can be hybrid-integrated. The light receiving element 413 in the present device has both a function as a monitor light receiving element of the surface emitting laser 410 and a function of receiving independent input light. When the surface emitting laser 410 emits light, it becomes a monitor light receiving element,
When the surface emitting laser 410 does not emit light, it becomes an independent light receiving element. This means that transmission and reception are performed alternately on a single optical fiber.
This is a function corresponding to so-called ping-pong transmission for receiving. At this time, considering the dynamic range of the amplifier connected to the subsequent stage of the light receiving element 413, it is desirable that the powers of the second output light 417 and the input light 418 are approximately equal.
In general, the power of the input light 418 is lower than the power of the first output light 414, so the power of the second output light 417 needs to be lower than the power of the first output light 414. To this end, the first and second output light 4
The reflectivity of the upper reflector 409 with respect to 14, 417 may be higher than the reflectivity of the lower reflector 407.

(Embodiment 5) FIG. 5 is a sectional view of a semiconductor light emitting and receiving device. First semiconductor substrate 5 made of p-type Si
01 has a first main surface 502 and a second main surface 503;
The second semiconductor substrate 504 made of aAs
5 and a fourth main surface 506. Second semiconductor substrate 5
04 is fixed on the first semiconductor substrate 501 such that the third main surface 505 is in contact with the first main surface 502. On the third main surface 505 of the second semiconductor substrate 504, p-type AlAs
Reflector 5 composed of alternately laminated multilayer films of GaAs and p-type GaAs
07, an active layer 508 having a structure in which an InGaAs well layer is sandwiched between GaAs barrier layers, and an upper reflector 509 composed of an alternately laminated multilayer film of n-type AlAs and n-type GaAs. The surface emitting laser 510 is formed by mesa-etching the bottom reflector 508 and the lower reflector 507.
Are formed. On the other hand, on the first main surface 502 of the first semiconductor substrate 501, an epi layer 5 made of low-concentration p-type Si is formed.
11 and a diffusion layer 512 in which an n-type impurity is diffused. These form a first light receiving element 513 and a second light receiving element 514. Here, the second light receiving element 51
4 is formed in a ring shape outside the first light receiving element 513 and is electrically separated by a separation groove 515. The second semiconductor substrate 504 and the first semiconductor substrate 501 are aligned so that the surface emitting laser 510 and the first light receiving element 513 are arranged to face each other. The first output light 516 is emitted from the surface emitting laser 510 across the fourth main surface 506 and enters the core 518 of the optical fiber 517. Also,
A second output light 519 is emitted from the surface emitting laser 510 in a direction opposite to the first output light 516, and the first light receiving element 5
13 is incident. Further, the core 51 of the optical fiber 517
8, the input light 520 is emitted, and the second semiconductor substrate 50
4 and is incident on the second light receiving element 514.

First main surface 502 of first semiconductor substrate 501
A first insulating film 521 is deposited thereon, and a wiring 522 is formed thereon. Further, the second semiconductor substrate 50
The second insulating film 521 is deposited on the fourth third main surface 505, and the first and second electrodes 524 and 525 are formed thereon. First and second electrodes 524, 525
Are a positive electrode and a negative electrode of the surface emitting laser 510. The first and second electrodes 4524 and 525 are connected to the wiring 52
2 and is fixed by a resin 526. In addition, third and fourth electrodes 527 and 528 serve as positive and negative electrodes of the first and second light receiving elements 513 and 514, respectively.
Are formed. On the other hand, a guide hole 529 is formed on the fourth main surface 506 of the second semiconductor substrate 504, and an optical fiber 517 is inserted therein.

With the above configuration, the surface emitting laser 51 that emits the first output light 516 toward the optical fiber 415
0, second output light 5 emitted from surface emitting laser 510
The first light receiving element 513 for receiving the light 19 and the second light receiving element 514 for receiving the input light 520 incident from the optical fiber 517 can be hybrid-integrated. In this device, the first light receiving element 513 is a surface emitting laser 510.
The second light receiving element 514 has a function of receiving independent input light. That is,
By using two light receiving elements, the monitor and independent light reception can be performed simultaneously.

(Embodiment 6) FIG. 6 is a sectional view of a semiconductor light emitting and receiving device. First semiconductor substrate 6 made of n-type Si
01 has a first main surface 602 and a second main surface 603, and G
The second semiconductor substrate 604 made of aAs
5 and a fourth main surface 606. Second semiconductor substrate 6
04 is fixed on the first semiconductor substrate 601 such that the third main surface 605 is in contact with the first main surface 602. On the third main surface 605 of the second semiconductor substrate 604, p-type AlAs
Reflector 6 composed of alternately laminated multilayer films of GaAs and p-type GaAs
07, an active layer 608 having a structure in which an InGaAs well layer is sandwiched between GaAs barrier layers, and an upper reflector 609 composed of an alternately laminated multilayer film of n-type AlAs and n-type GaAs. The surface emitting laser 610 is formed by mesa-etching the bottom reflector 608 and the lower reflector 607.
Are formed. On the other hand, on the first main surface 602 of the first semiconductor substrate 601, a collector 611 made of low-concentration n-type Si, a base 612 in which p-type impurities are diffused, and n
There is an emitter 613 in which a type impurity is diffused.
Are formed. Surface emitting laser 610 and light receiving element 61
The second semiconductor substrate 604 and the first semiconductor substrate 601 are aligned so that the semiconductor substrate 4 is disposed opposite to the semiconductor substrate. The first output light 615 is emitted from the surface emitting laser 610 across the fourth main surface 606 and enters the core 617 of the optical fiber 616. The first output light 6 from the surface emitting laser 610
The second output light 618 is emitted in a direction opposite to the direction 15 and enters the light receiving element 614. Further, the input light 619 is emitted from the core 617 of the optical fiber 616, passes through the second semiconductor substrate 604, and enters the light receiving element 614.

The first main surface 602 of the first semiconductor substrate 601
A first insulating film 620 is deposited thereon, and a first insulating film 620 is deposited thereon.
And second wirings 621 and 622 are formed. Further, on the third main surface 605 of the second semiconductor substrate 604,
A second insulating film 623 is deposited, and first and second electrodes 624 and 625 are formed thereon. The first and second electrodes 624, 625 are the positive and negative electrodes of the surface emitting laser 610. These first and second electrodes 62
4 and 625 are first and second wirings 621 and 625, respectively.
622, and is fixed by a resin 626. Further, third and fourth electrodes 627 and 628 are formed as an emitter electrode and a collector electrode of the light receiving element 614. Further, the first wiring 621 is connected to the third electrode 627. On the other hand, the second semiconductor substrate 6
A guide hole 629 is formed on the fourth main surface 606 of the optical disk 04, and an optical fiber 616 is inserted therein.

With the above configuration, the surface emitting laser 610 that emits the first output light 615 toward the optical fiber 616
And the second output light 6 emitted from the surface emitting laser 610
18 and input light 619 incident from the optical fiber 616
Can be hybrid-integrated. Here, the surface emitting laser 610 and the light receiving element 61
Reference numeral 4 is electrically connected in series, and the light receiving element 614 is a phototransistor having an amplifying action. That is, the present device functions as an optical bistable element by the optical positive feedback action in which the second output light 618 emitted from the surface emitting laser 610 enters the light receiving element 614.

In the first to sixth embodiments, the surface emitting laser is made of InG on a GaAs substrate.
aAs / GaAs / AlAs system, light receiving element material is Si
However, it is also possible to use other materials. Since the first semiconductor substrate on which the light receiving element is formed and the second semiconductor substrate on which the surface emitting laser is formed are fixed by a resin, they need not be lattice-matched. However, as a condition that can take these configurations, the second
Must be transparent to input light or output light.

(Embodiment 7) FIG. 7 is a sectional view of a semiconductor light emitting and receiving device. A first conductive layer 702 made of n-type AlGaAs, a light receiving layer 703 made of high-purity GaAs, a second conductive layer 704 made of p-type AlGaAs, p-type AlAs and p-type AlGaAs on a semiconductor substrate 701 made of GaAs.
s, lower reflector 705 composed of alternately laminated multilayer films of s
An active layer 706 having a configuration in which an s well layer is sandwiched between AlGaAs barrier layers, and an upper reflector 707 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs are sequentially laminated.
Upper reflector 707, active layer 706 and lower reflector 70
5 form a surface emitting laser 708, and the first conductive layer 702, the light receiving layer 703 and the second conductive layer 704 form a light receiving element 709. Surface emitting laser 708
First and second electrodes 710 as a positive electrode and a negative electrode of
711 are formed, and third and fourth electrodes 712 and 713 are formed as a positive electrode and a negative electrode of the light receiving element 709. Further, from the surface emitting laser 708, first output light 714 is emitted toward the upper reflector 707, and second output light 715 is emitted toward the lower reflector 705. Second
Output light 715 is incident on the light receiving element 709.

This device is a monolithic light emitting / receiving device in which a light receiving element 709 and a surface emitting laser 708 are sequentially stacked on a substrate. The light receiving element 709 is used to monitor output light from the surface emitting laser 708.

(Eighth Embodiment) FIG. 8 is a sectional view of a semiconductor light emitting / receiving device. A first conductive layer 802 made of n-type AlGaAs, a light receiving layer 803 made of high-purity GaAs, a second conductive layer 804 made of p-type AlGaAs, p-type AlAs and p-type AlGaAs on a semiconductor substrate 801 made of GaAs.
s, lower reflector 805 composed of alternately laminated multilayer films of s
An active layer 806 having a configuration in which an s well layer is sandwiched between AlGaAs barrier layers, and an upper reflector 807 composed of an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs are sequentially laminated.
Upper reflector 807, active layer 806 and lower reflector 80
5 form a surface emitting laser 808, and the first conductive layer 802, the light receiving layer 803 and the second conductive layer 804 form a light receiving element 809. Surface emitting laser 808
First and second electrodes 810 as positive and negative electrodes of
811 are formed, and third and fourth electrodes 812 and 813 are formed as a positive electrode and a negative electrode of the light receiving element 809. Further, output light 814 is emitted from the surface emitting laser 808 to the upper reflector 807 side, and
The light enters the fifteen cores 816. The optical fiber 815 is fixed substantially perpendicularly to the semiconductor substrate 801 with its tip close to the upper reflector 807. The optical fiber 81
The input light 817 is emitted from the core 816 of No. 5 and enters the light receiving element 809.

This device is a monolithic light emitting and receiving device in which a light receiving element 809 and a surface emitting laser 808 are sequentially laminated on a substrate. Receives input light. Further, output light from the surface emitting laser 808 and input light to the light receiving element 809 propagate through the same optical fiber 815.

(Embodiment 9) FIG. 9 is a sectional view of a semiconductor light emitting and receiving device. A lower reflector 902 comprising an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs on a semiconductor substrate 901 of GaAs, and a GaAs well layer of AlGaAs
Active layer 903 sandwiched between s barrier layers, n-type AlAs
An upper reflector 904 composed of an alternately laminated multilayer film of GaAs and n-type AlGaAs and a light receiving layer 905 composed of high-purity GaAs are sequentially laminated. A surface emitting laser 906 is constituted by the upper reflector 904, the active layer 903, and the lower reflector 902.
And second electrodes 907 and 908 are formed. On the other hand, a comb electrode 909 is formed on the light receiving layer 905,
The light receiving element 910 is of the MSM type. Further, in order to electrically separate the light receiving element 910 and the surface emitting laser 906, an etching groove 911 is provided between the upper reflector 904 constituting the surface emitting laser 906 and the upper reflector 904 below the light receiving layer 905. . From the surface emitting laser 906, output light 912 is emitted toward the upper reflector 904, and enters the core 914 of the optical fiber 913. The optical fiber 913 has a tip close to the upper reflector 904 and the semiconductor substrate 901.
Are fixed substantially vertically to the camera. Further, input light 915 is emitted from the core 914 of the optical fiber 913 and enters the light receiving element 910.

This device is a monolithic light emitting / receiving device in which a surface emitting laser 906 and a light receiving element 910 are sequentially stacked on a substrate. The light receiving element 910 receives independent input light 915. Further, output light 912 from the surface emitting laser 906,
The input light 915 to the light receiving element 910 is the same optical fiber 9
13 is propagated.

(Embodiment 10) FIG. 10 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 10 made of GaAs
01, a lower reflector 1002 comprising an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and a GaAs well layer of A
An active layer 1003 having a configuration sandwiched between lGaAs barrier layers is stacked. Further, n is formed on a partial region of the active layer 1003.
A first upper reflector 1004 comprising an alternately laminated multilayer film of type AlAs and n-type AlGaAs is stacked, and high resistance AlAs and AlGaAs are provided outside the first upper reflector 1004.
A second upper reflector 1005 composed of alternately laminated multilayer films of n-type AlAs and n-type AlGa
After the As alternately laminated multilayer film is laminated on the entire surface, the outer portion can be formed by increasing the resistance of the outer portion by, for example, ion implantation. On the second upper reflector 1005, a light receiving layer 1006 made of high purity GaAs is laminated. First upper reflector 1004, active layer 1003 and lower reflector 100
2 form a surface emitting laser 1007, and first and second electrodes 1008 and 1009 are formed as a positive electrode and a negative electrode of the surface emitting laser 1007. On the other hand, a comb electrode 1010 is formed on the light receiving layer 1006,
It is an M-type light receiving element 1011. Surface emitting laser 1
007, the output light 1 goes to the first upper reflector 1004 side.
012 is emitted and the core 1014 of the optical fiber 1013
Incident on. The optical fiber 1013 is the first upper reflector 1
004 is fixed almost vertically to the semiconductor substrate 1001 with its tip close to. Also, the optical fiber 1013
The input light 1015 is emitted from the core 1014 of the light receiving element 1014 and enters the light receiving element 1011.

The present apparatus has a surface emitting laser 1006 on a substrate.
And a light receiving element 1011 are sequentially stacked, and the light receiving element 1011 has independent input light 1015.
Is received. The output light 1012 from the surface emitting laser 1007 and the input light 1015 to the light receiving element 1011 propagate through the same optical fiber 1013.

In the seventh to tenth embodiments, the surface emitting laser is made of Ga on a GaAs substrate.
As / AlGaAs / AlAs system, the material of the light receiving element is G
Although aAs has been described, it is also possible to use other materials. The semiconductor substrate does not need to be transparent to input light or output light. However, since the light receiving element and the surface emitting laser are formed by being laminated on the same semiconductor substrate, it is necessary that both material systems are lattice-matched.

(Embodiment 11) FIG. 11 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 11 made of p-type Si
The semiconductor thin film 1102 is fixed on the semiconductor device 110. The semiconductor thin film 1102 includes a lower reflector 1103 composed of an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and an active layer 11 having a configuration in which a GaAs well layer is sandwiched between AlGaAs barrier layers.
04, an upper reflector 1105 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs. Top reflector 1
The surface emitting laser 1106 is formed by mesa etching of the active layer 105 and the active layer 1104. On the other hand, on the semiconductor substrate 1101, there are an epi layer 1107 made of low-concentration p-type Si and a diffusion layer 1108 in which n-type impurities are diffused, and these form a light-receiving element 1109. The semiconductor substrate 1101 and the semiconductor thin film 110 are arranged such that the surface emitting laser 1106 and the light receiving element 1109 are arranged to face each other.
2 is aligned. The first output light 1110 is emitted from the lower reflector 1103 of the surface emitting laser 1106. Also, the upper reflector 1105 of the surface emitting laser 1106
A second output light 1111 is emitted from the light receiving element 110
9 is incident.

A first insulating film 1112 is deposited on a semiconductor substrate 1101, and a wiring 1113 is formed thereon. Further, a second insulating film 1114 is deposited on the semiconductor thin film 1102, and first and second electrodes 1115 and 1116 are formed thereon. First and second
Electrodes 1115 and 1116 are a positive electrode and a negative electrode of the surface emitting laser 1106. These first and second electrodes 1
115 and 1116 are pressed against the wiring 1113 and the resin 1
117. Since the resin 1117 is transparent, the second output light 1111 emitted from the surface emitting laser 1106 enters the light receiving element 1109 without being blocked. Further, third and fourth electrodes 1118 and 1119 are formed as a positive electrode and a negative electrode of the light receiving element 1109.

With the above configuration, the surface emitting laser 1106
The light receiving element 1109 for monitoring the output light from the surface emitting laser 1106 can be hybridly integrated. Further, since the semiconductor thin film 1102 on which the surface emitting laser 1106 is formed and the semiconductor substrate 1101 on which the light receiving element 1109 is formed are fixed by the transparent resin 1117, not only the mounting is easy, but also the second monitor
Output light 1111 is not blocked. As a method of manufacturing this device, a light receiving element is formed on a first semiconductor substrate, a surface emitting laser is formed on a second semiconductor substrate, and a second semiconductor is formed so that the light receiving element and the surface emitting laser face each other. The substrate is mounted face-down on the first semiconductor substrate. Thereafter, the second semiconductor substrate is removed by etching. Therefore, only the first semiconductor substrate exists as the semiconductor substrate, and this is simply referred to as a semiconductor substrate 1101. The surface emitting laser from which the second semiconductor substrate has been removed remains as a semiconductor thin film 1102.
Here, the second semiconductor substrate is removed because the second semiconductor substrate does not transmit the first output light. This configuration is the same as that of the first embodiment in that the surface emitting laser 1106 and the light receiving element 1109 for monitoring the output light from the surface emitting laser 1106 are mounted in the same package. The difference is that the substrate opaque to light is removed after face-down mounting.

(Embodiment 12) FIG. 12 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 12 made of p-type Si
01, a semiconductor thin film 1202 is fixed. The semiconductor thin film 1202 includes a lower reflector 1203 composed of an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and an active layer 12 having a structure in which a GaAs well layer is sandwiched between AlGaAs barrier layers.
04, comprising an upper reflector 1205 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs. Top reflector 1
The surface emitting laser 1206 is formed by mesa etching of the active layer 205 and the active layer 1204. On the other hand, on the semiconductor substrate 1201, there are an epi layer 1207 made of low-concentration p-type Si and a diffusion layer 1208 in which n-type impurities are diffused, and these form a light receiving element 1209. The semiconductor substrate 1201 and the semiconductor thin film 120 are arranged such that the surface emitting laser 1206 and the light receiving element 1209 are arranged to face each other.
2 is aligned. Output light 1210 is emitted from the lower reflector 1203 of the surface emitting laser 1206 and enters the core 1212 of the optical fiber 1211. Also, input light 1213 is emitted from the core 1212 of the optical fiber 1211, passes through the semiconductor thin film 1202, and passes through the light receiving element 1209.
Incident on.

On a semiconductor substrate 1201, a first insulating film 1214 is deposited, and a wiring 1214 is formed thereon. Further, a second insulating film 1216 is deposited on the semiconductor thin film 1202, and first and second electrodes 1217 and 1218 are formed thereon. First and second
The electrodes 1217 and 1218 are the positive and negative electrodes of the surface emitting laser 1206. These first and second electrodes 1
217 and 1218 are pressed against the wiring 1214 and the resin 1
219. Also, the light receiving element 120
9 as a positive electrode and a negative electrode,
20, 1221 are formed.

With the above configuration, the surface emitting laser 1206 that emits the output light 1210 toward the optical fiber 1211
Then, the light receiving element 1209 that receives the input light 1213 incident from the optical fiber 1211 can be hybrid-integrated. In this configuration, the output light from the surface emitting laser 1206 is not emitted to the light receiving element side. The input light 12
13 and the output light 1210 have different wavelengths.
Is lower than the output light 121.
0 is lower than the reflectance of the lower reflector 1203. That is, by making the lower reflector 1203 transparent to the input light 1213, the input light 1213 is made to enter the light receiving element 1209. For example, if the thickness of the alternately laminated multilayer film of the lower reflector 1203 is set so that the wavelength of the output light 1210 is 0.85 μm, the input light having the wavelength of 0.78 μm easily transmits through the lower reflector 1203. be able to.

(Embodiment 13) FIG. 13 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 13 made of p-type Si
01, a semiconductor thin film 1302 is fixed. The semiconductor thin film 1302 includes an etching stop layer 1303 made of AlGaAs, a lower reflector 1304 made of an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and an active layer 130 having a GaAs well layer sandwiched between AlGaAs barrier layers.
5. An upper reflector 1306 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs. Upper reflector 13
06, the active layer 1305 and the lower reflector 1304 are mesa-etched to form a surface emitting laser 1307. On the other hand, on the semiconductor substrate 1301, there are an epi layer 1308 made of low-concentration p-type Si and a diffusion layer 1309 in which n-type impurities are diffused.
Are formed. Surface emitting laser 1307 and light receiving element 1
The semiconductor substrate 1301 and the semiconductor thin film 1302 are aligned with each other so that 310 is opposed to the semiconductor substrate 1301. Output light 1311 is emitted from the lower reflector 1304 of the surface emitting laser 1307 and enters the core 1313 of the optical fiber 1312. Further, input light 1314 is emitted from the core 1313 of the optical fiber 1312, passes through the semiconductor thin film 1302, and enters the light receiving element 1310.

A first insulating film 1315 is deposited on a semiconductor substrate 1301, and a wiring 1316 is formed thereon. Further, a second insulating film 1317 is deposited on the semiconductor thin film 1302, and first and second electrodes 1318 and 1319 are formed thereon. First and second
Electrodes 1318 and 1319 are the positive and negative electrodes of the surface emitting laser 1307. These first and second electrodes 1
318 and 1319 are crimped to the wiring 1316 and the resin 1
320. Also, the light receiving element 131
The third and fourth electrodes 13 as positive and negative electrodes of
21, 1322 are formed.

With the above configuration, the surface emitting laser 1307 emitting the output light 1311 toward the optical fiber 1312
Then, the light receiving element 1310 for receiving the input light 1314 incident from the optical fiber 1312 can be hybrid-integrated. In this configuration, the output light from the surface emitting laser 1307 is not emitted to the light receiving element side. Also, the input light 13
The input light 13 at the position where 14 crosses the lower reflector 1304
The area of the lower reflector 1304 is made smaller than the cross-sectional area of the lower reflector 14. This is due to the input light 13
This is to prevent the reflection of the light beam 14. Active layer 1305
And the area of the upper reflector 1306 is
4, the input light 1314 transmitted around the surface emitting laser 1307 enters the light receiving element 1310. In this apparatus, an etching stop layer is provided as a main part of the semiconductor thin film after the removal of the second semiconductor substrate, so that the area of the lower reflector can be reduced.

(Embodiment 14) FIG. 14 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 14 made of p-type Si
01, a semiconductor thin film 1402 is fixed. The semiconductor thin film 1402 includes an etching stop layer 1403 made of AlGaAs, a lower reflector 1404 made of an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and an active layer 140 having a GaAs well layer sandwiched between AlGaAs barrier layers.
5. An upper reflector 1406 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs. Upper reflector 14
06, the active layer 1405 and the lower reflector 1404 are mesa-etched to form a surface emitting laser 1407. On the other hand, on the semiconductor substrate 1401, there are an epi layer 1408 made of low-concentration p-type Si and a diffusion layer 1409 in which n-type impurities are diffused.
Are formed. Surface emitting laser 1407 and light receiving element 1
The semiconductor substrate 1401 and the semiconductor thin film 1402 are aligned with each other so that the semiconductor devices 410 are arranged to face each other. First output light 141 from lower reflector 1404 of surface emitting laser 1407
1 is emitted and enters the core 1413 of the optical fiber 1412. The upper reflector 14 of the surface emitting laser 1407
06, the second output light 1414 is emitted, and the light receiving element 1
It is incident on 410. Further, input light 1415 is emitted from the core 1413 of the optical fiber 1412, and the semiconductor thin film 1
The light passes through 402 and enters the light receiving element 1410.

A first insulating film 1416 is deposited on a semiconductor substrate 1401, and a wiring 1417 is formed thereon. Further, a second insulating film 1418 is deposited on the semiconductor thin film 1402, and first and second electrodes 1419 and 1420 are formed thereon. First and second
The electrodes 1419 and 1420 are the positive and negative electrodes of the surface emitting laser 1407. These first and second electrodes 1
419 and 1420 are crimped to the wiring 1417 and the resin 1
421. Also, the light receiving element 141
The third and fourth electrodes 14 as positive and negative electrodes
22 and 1423 are formed.

With the above configuration, the surface emitting laser 1 that emits the first output light 1411 toward the optical fiber 1412
407 and a light receiving element 1410 that receives the second output light 1414 emitted from the surface emitting laser 1407 and the input light 1415 incident from the optical fiber 1412 can be hybrid-integrated. Light receiving element 1 in this device
Reference numeral 410 has both a function as a monitor light receiving element of the surface emitting laser 1407 and a function of receiving independent input light. When the surface emitting laser 1407 emits light, it becomes a monitor light receiving element, and when the surface emitting laser 1407 does not emit light, it becomes an independent light receiving element. This is a function corresponding to so-called ping-pong transmission in which transmission and reception are alternately performed with one optical fiber. At this time, the light receiving element 1410
Considering the dynamic range of the amplifier connected to the subsequent stage, it is desirable that the powers of the second output light 1414 and the input light 1415 are approximately equal. In general, the power of the input light 1415 is smaller than the power of the first output light 1411, so that the second power is smaller than the power of the first output light 1411.
It is necessary to reduce the power of the output light 1414. For this purpose, the first and second output light 1411, 141
The reflectance of the upper reflector 1406 with respect to the lower reflector 1
What is necessary is just to make it higher than the reflectance of 404.

(Embodiment 15) FIG. 15 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 15 made of p-type Si
01, a semiconductor thin film 1502 is fixed. The semiconductor thin film 1502 includes an etching stop layer 1503 made of AlGaAs, a lower reflector 1504 made of an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and an active layer 150 having a GaAs well layer sandwiched between AlGaAs barrier layers.
5. An upper reflector 1506 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs. Top reflector 15
06, the active layer 1505, and the lower reflector 1504 are mesa-etched to form a surface emitting laser 1507. On the other hand, on the semiconductor substrate 1501, there are an epi layer 1508 made of low-concentration p-type Si and a diffusion layer 1509 in which n-type impurities are diffused.
510 and a second light receiving element 1511 are formed. Here, the second light receiving element 1511 is formed in a ring shape outside the first light receiving element 1510,
Is electrically isolated by Surface emitting laser 150
The semiconductor substrate 1501 and the semiconductor thin film 1502 are aligned with each other such that the first light receiving element 1510 and the first light receiving element 1510 are opposed to each other. The first output light 1513 is emitted from the lower reflector 1504 of the surface emitting laser 1507, and is output from the optical fiber 151.
4 core 1515. The surface emitting laser 15
The second output light 1516 is emitted from the upper reflector 1506 at 07 and enters the first light receiving element 1510. Further, the input light 15 is transmitted from the core 1515 of the optical fiber 1514.
17 is emitted, passes through the semiconductor thin film 1502, and enters the second light receiving element 1511.

On a semiconductor substrate 1501, a first insulating film 1518 is deposited, and a wiring 1519 is formed thereon. Further, a second insulating film 1520 is deposited on the semiconductor thin film 1502, and first and second electrodes 1521 and 1522 are formed thereon. First and second
Are the positive and negative electrodes of the surface emitting laser 1507. These first and second electrodes 1
521 and 1522 are crimped to the wiring 1519 and the resin 1
523. In addition, the first and second
Third and fourth electrodes 1524 and 1525 are formed as positive and negative electrodes of the light receiving elements 1510 and 1511.

With the above configuration, the surface emitting laser 1 that emits the first output light 1513 toward the optical fiber 1514
507, hybrid integration of a first light receiving element 1510 for receiving a second output light 1516 emitted from a surface emitting laser 1507, and a second light receiving element 1511 for receiving an input light 1517 incident from an optical fiber 1514; Can be. In this device, the first light receiving element 1510 has a function of monitoring the surface emitting laser 1507, and the second light receiving element 1511 has a function of receiving independent input light. That is, by using two light receiving elements,
Monitor and independent light reception can be performed simultaneously.

(Embodiment 16) FIG. 16 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 16 made of n-type Si
01, a semiconductor thin film 1602 is fixed. The semiconductor thin film 1602 includes an etching stop layer 1603 made of AlGaAs, a lower reflector 1604 made of an alternately laminated multilayer film of p-type AlAs and p-type AlGaAs, and an active layer 160 having a GaAs well layer sandwiched between AlGaAs barrier layers.
5. An upper reflector 1606 comprising an alternately laminated multilayer film of n-type AlAs and n-type AlGaAs. Upper reflector 16
06, the active layer 1605 and the lower reflector 1604 are mesa-etched to form a surface emitting laser 1607. On the other hand, on a semiconductor substrate 1601, there are a collector 1608 made of low-concentration n-type Si, a base 1609 in which p-type impurities are diffused, and an emitter 1610 in which n-type impurities are diffused. Are formed. The semiconductor thin film 1602 and the semiconductor substrate 1601 are aligned so that the surface emitting laser 1607 and the light receiving element 1611 are arranged to face each other. Lower reflector 1 of surface emitting laser 1607
The first output light 1612 is emitted from 604 and enters the core 1614 of the optical fiber 1613. The second output light 1 from the upper reflector 1606 of the surface emitting laser 1607
615 is emitted and enters the light receiving element 1611. Further, the input light 16 from the core 1614 of the optical fiber 1613
16 is emitted, passes through the semiconductor thin film 1602, and enters the light receiving element 1611.

On the semiconductor substrate 1601, a first insulating film 1617 is deposited, and the first and second wirings 117 are formed thereon.
618 and 1619 are formed. Further, a second insulating film 1620 is deposited on the semiconductor thin film 1602, and first and second electrodes 1621 and 1622 are formed thereon. First and second electrodes 1621, 1622
Are a positive electrode and a negative electrode of the surface emitting laser 1607. These first and second electrodes 1621 and 1622 are press-bonded to first and second wirings 1618 and 1619, respectively, and fixed by resin 1623. Further, third and fourth electrodes 1624 and 1625 are formed as an emitter electrode and a collector electrode of the light receiving element 1611. Further, the first wiring 1618 is connected to the third electrode 1
624.

With the above configuration, the surface emitting laser 1 that emits the first output light 1612 toward the optical fiber 1613
607 and the light receiving element 1611 that receives the second output light 1615 emitted from the surface emitting laser 1607 and the input light 1616 incident from the optical fiber 1607 can be hybrid-integrated. Here, the surface emitting laser 16
07 and the light receiving element 1611 are electrically connected in series, and the light receiving element 1611 is a phototransistor having an amplifying action. That is, the surface emitting laser 1607
The second output light 1615 emitted from the light receiving element 161
The device functions as an optical bistable element by the optical positive feedback action incident on 1.

In the eleventh to sixteenth embodiments, the material of the surface emitting laser is G on a GaAs substrate.
Although the material of the aAs / AlGaAs / AlAs system and the light receiving element has been described as Si, it is also possible to use other materials. Since the first semiconductor substrate on which the light receiving element is formed and the second semiconductor substrate on which the surface emitting laser is formed are fixed by a resin, they need not be lattice-matched. In addition, since the substrate for forming the surface emitting laser is etched away, there is no restriction that the substrate must be transparent to input light or output light.

(Embodiment 17) FIG. 17 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 1 made of n-type InP
A semiconductor thin film 1702 is fixed on 701. The semiconductor thin film 1702 includes an etching stop layer 1703 made of InGaAsP, and an active layer 1704 having a structure in which an InGaAsP well layer is sandwiched between InP barrier layers. Active layer 17
An upper reflector 1705 made of a dielectric multilayer is deposited on the substrate 04, and a lower reflector 1706 made of a dielectric multilayer is deposited on the etching stop layer 1703. Upper reflector 1705, active layer 1704 and lower reflector 17
06, a surface emitting laser 1707 is formed. On the other hand, a low-concentration n-type In
There are an epi layer 1708 made of GaAs and a diffusion layer 1709 in which a p-type impurity is diffused.
10 are formed. The semiconductor substrate 1701 is arranged such that the surface emitting laser 1707 and the light receiving element 1710 are arranged to face each other.
And the semiconductor thin film 1702 are aligned. First output light 1 from lower reflector 1706 of surface emitting laser 1707
711 is emitted. The second output light 1712 is emitted from the upper reflector 1705 of the surface emitting laser 1707 and enters the light receiving element 1710.

A first insulating film 1713 is deposited on a semiconductor substrate 1701, and a wiring 1714 is formed thereon. A second insulating film 1715 is deposited on the semiconductor thin film 1702, and first and second electrodes 1716 and 1717 are formed thereon. First and second
The electrodes 1716 and 1717 are the positive and negative electrodes of the surface emitting laser 1707. These first and second electrodes 1
716 and 1717 are crimped to the wiring 1714 and the resin 1
718. Since the resin 1718 is transparent, the second output light 1712 emitted from the surface emitting laser 1707 enters the light receiving element 1710 without being shielded. In addition, third and fourth electrodes 1719 and 1720 are formed as a positive electrode and a negative electrode of the light receiving element 1710.

With the above configuration, the surface emitting laser 1707
The light receiving element 1710 for monitoring the output light from the surface emitting laser 1707 can be hybrid-integrated. Further, since the semiconductor thin film 1702 on which the surface emitting laser 1707 is formed and the semiconductor substrate 1701 on which the light receiving element 1710 is formed are fixed by a transparent resin 1718, not only mounting is easy, but also the second monitor.
Output light 1712 is not blocked. As a method of manufacturing this device, a light receiving element is formed on a first semiconductor substrate, an etching stop layer, an active layer, and an upper reflector are formed on a second semiconductor substrate, and the light receiving element and the surface emitting laser face each other. Then, the second semiconductor substrate is mounted face down on the first semiconductor substrate. Thereafter, the second semiconductor substrate is removed by etching, and finally a lower reflector is deposited.
For this reason, only the first semiconductor substrate exists as the semiconductor substrate.
It is called 1. In addition, the etching stop layer and the active layer from which the second semiconductor substrate has been removed remain as a semiconductor thin film 1702. This configuration is the same as the eleventh embodiment in that the surface emitting laser and the light receiving element are mounted in the same package, and the substrate opaque to the output light from the surface emitting laser is removed after face-down mounting, The difference is that the upper reflector and the lower reflector of the surface emitting laser are not semiconductor multilayer films but dielectric multilayer films. That is, it is possible to mount a surface emitting laser and a light receiving element that monitors output light from the surface emitting laser in the same package for a material system in which high reflectance is difficult to obtain with a semiconductor multilayer film.

(Embodiment 18) FIG. 18 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 1 made of n-type InP
A semiconductor thin film 1802 is fixed on 801. The semiconductor thin film 1802 includes an etching stop layer 1803 made of InGaAsP, and an active layer 1804 in which an InGaAsP well layer is sandwiched between InP barrier layers. Active layer 18
An upper reflector 1805 made of a dielectric multilayer film is deposited on the substrate 04, and a lower reflector 1806 made of a dielectric multilayer film is deposited on the etching stop layer 1803. Top reflector 1805, active layer 1804 and bottom reflector 18
06, a surface emitting laser 1807 is formed. On the other hand, a low-concentration n-type In
There are an epi layer 1808 made of GaAs and a diffusion layer 1809 in which a p-type impurity is diffused.
10 are formed. The semiconductor substrate 1801 is arranged such that the surface emitting laser 1807 and the light receiving element 1810 are arranged to face each other.
And the semiconductor thin film 1802 are aligned. Output light 1811 from the lower reflector 1806 of the surface emitting laser 1807
Is emitted and enters the core 1813 of the optical fiber 1812. Further, input light 1814 is emitted from the core 1813 of the optical fiber 1812, passes through the semiconductor thin film 1802, and enters the light receiving element 1810.

On a semiconductor substrate 1801, a first insulating film 1815 is deposited, and a wiring 1816 is formed thereon. Further, a second insulating film 1817 is deposited on the semiconductor thin film 1802, and first and second electrodes 1818 and 1819 are formed thereon. First and second
Electrodes 1818 and 1819 are the positive and negative electrodes of the surface emitting laser 1807. These first and second electrodes 1
818 and 1819 are pressed against the wiring 1817 and the resin 1
820. Also, the light receiving element 181
The third and fourth electrodes 18 as positive and negative electrodes
21, 1822 are formed.

With the above configuration, the surface emitting laser 1807 that emits the output light 1811 toward the optical fiber 1812
Then, the light receiving element 1810 that receives the input light 1814 incident from the optical fiber 1812 can be hybrid-integrated. In this configuration, the output light from the surface emitting laser 1807 is not emitted to the light receiving element side. Also, the input light 18
14 and the output light 1811 have different wavelengths.
The reflectance of the lower reflector 1806 with respect to
1 is lower than the reflectivity of the lower reflector 1806. That is, the lower reflector 1806 is made transparent to the input light 1814 so that the input light 1814 is incident on the light receiving element 1810. For example, if the thickness of the dielectric multilayer film of the lower reflector 1806 is set so that the wavelength of the output light 1811 is 1.3 μm, the input light having the wavelength of 1.55 μm easily passes through the lower reflector 1806. be able to.

(Embodiment 19) FIG. 19 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 1 made of n-type InP
A semiconductor thin film 1902 is fixed on 901. The semiconductor thin film 1902 includes an etching stop layer 1903 made of InGaAsP, and an active layer 1904 having a structure in which an InGaAsP well layer is sandwiched between InP barrier layers. Active layer 19
An upper reflector 1905 made of a dielectric multilayer is deposited on the substrate 04, and a lower reflector 1906 made of a dielectric multilayer is deposited on the etching stop layer 1903. Upper reflector 1905, active layer 1904 and lower reflector 19
06, a surface emitting laser 1907 is formed. On the other hand, a low-concentration n-type In
There is an epi layer 1908 made of GaAs and a diffusion layer 1909 in which a p-type impurity is diffused.
10 are formed. The semiconductor substrate 1901 is arranged such that the surface emitting laser 1907 and the light receiving element 1910 are arranged to face each other.
And the semiconductor thin film 1902 are aligned. First output light 1 from lower reflector 1904 of surface emitting laser 1907
911 is emitted and the core 1913 of the optical fiber 1912 is emitted.
Incident on. Further, the second output light 1914 is emitted from the upper reflector 1906 of the surface emitting laser 1907 and enters the light receiving element 1910. Further, input light 1915 is emitted from the core 1913 of the optical fiber 1912, passes through the semiconductor thin film 1902, and enters the light receiving element 1910.

On a semiconductor substrate 1901, a first insulating film 1916 is deposited, and a wiring 1917 is formed thereon. Further, a second insulating film 1918 is deposited on the semiconductor thin film 1902, and first and second electrodes 1919 and 1920 are formed thereon. First and second
Are the positive and negative electrodes of the surface emitting laser 1907. These first and second electrodes 1
919 and 1920 are crimped to the wiring 1917 and the resin 1
921. Also, the light receiving element 191
The third and fourth electrodes 19 as positive and negative electrodes of
22, 1923 are formed.

With the above configuration, the surface emitting laser 1 that emits the first output light 1911 toward the optical fiber 1912
907 and a light receiving element 1910 that receives the second output light 1914 emitted from the surface emitting laser 1907 and the input light 1915 incident from the optical fiber 1912 can be hybrid-integrated. Light receiving element 1 in this device
Reference numeral 910 has both a function as a monitor light receiving element of the surface emitting laser 1907 and a function of receiving independent input light. When the surface emitting laser 1907 emits light, it becomes a monitor light receiving element, and when the surface emitting laser 1907 does not emit light, it becomes an independent light receiving element. This is a function corresponding to so-called ping-pong transmission in which transmission and reception are alternately performed with one optical fiber. At this time, the light receiving element 1910
Considering the dynamic range of the amplifier connected to the subsequent stage, it is desirable that the power of the second output light 1914 and the power of the input light 1915 are approximately equal. In general, the power of the input light 1915 is smaller than the power of the first output light 1911.
Of the output light 1914 must be reduced. To this end, the first and second output lights 1911, 191
The reflectance of the upper reflector 1905 with respect to the lower reflector 1
What is necessary is just to make it higher than the reflectance of 906.

(Embodiment 20) FIG. 20 is a sectional view of a semiconductor light emitting and receiving device. Semiconductor substrate 2 made of n-type InP
The semiconductor thin film 2002 is fixed on 001. The semiconductor thin film 2002 includes an etching stop layer 2003 made of InGaAsP, and an active layer 2004 having a structure in which an InGaAsP well layer is sandwiched between InP barrier layers. Active layer 20
An upper reflector 2005 made of a dielectric multilayer film is deposited on the substrate 04, and a lower reflector 2006 made of a dielectric multilayer film is deposited on the etching stop layer 2003. Top reflector 2005, active layer 2004 and bottom reflector 20
06, a surface emitting laser 2007 is formed. On the other hand, a low-concentration n-type In
There is an epi layer 2008 made of GaAs and a diffusion layer 2009 in which a p-type impurity is diffused, and these form a first light receiving element 2010 and a second light receiving element 2011. Here, the second light receiving element 2011 is formed in a ring shape outside the first light receiving element 2010, and the separation groove 201 is formed.
2 are electrically separated. Surface emitting laser 20
The semiconductor substrate 2001 and the semiconductor thin film 2002 are aligned such that the first light receiving element 1510 and the first light receiving element 1510 face each other. Lower reflector 2004 of surface emitting laser 2007
The first output light 2013 is emitted from the
Fourteen cores 2015 are incident. In addition, the surface emitting laser 2
007 from the upper reflector 2006
Are emitted and enter the first light receiving element 2010. Further, the input light 20 is output from the core 2015 of the optical fiber 2014.
17 is emitted, passes through the semiconductor thin film 2002, and enters the second light receiving element 2011.

A first insulating film 2018 is deposited on a semiconductor substrate 2001, and a wiring 2019 is formed thereon. Further, a second insulating film 2020 is deposited on the semiconductor thin film 2002, and first and second electrodes 2021 and 2022 are formed thereon. First and second
The electrodes 2021 and 2022 are the positive and negative electrodes of the surface emitting laser 2007. These first and second electrodes 2
021 and 2022 are crimped to the wiring 2019 and the resin 2
023. In addition, the first and second
Third and fourth electrodes 2024 and 2025 are formed as positive and negative electrodes of the light receiving elements 2010 and 2011.

With the above configuration, the surface emitting laser 2 that emits the first output light 2013 toward the optical fiber 2014
007, hybrid integration of the first light receiving element 2010 for receiving the second output light 2016 emitted from the surface emitting laser 2007 and the second light receiving element 2011 for receiving the input light 2017 incident from the optical fiber 2014 Can be. In this device, the first light receiving element 2010 has a function of monitoring the surface emitting laser 2007, and the second light receiving element 2011 has a function of receiving independent input light. That is, by using two light receiving elements,
Monitor and independent light reception can be performed simultaneously.

In the seventeenth to twentieth embodiments, the material of the surface emitting laser is In on the InP substrate.
The material of the GaAsP-based light receiving element has been described as being InGaAs, but it is also possible to use other materials. Since the first semiconductor substrate on which the light receiving element is formed and the second semiconductor substrate on which the surface emitting laser is formed are fixed by a resin, they need not be lattice-matched. In addition, since the substrate for forming the surface emitting laser is etched away, there is no restriction that the substrate must be transparent to input light or output light. Further, since the upper reflector and the lower reflector of the surface emitting laser are not a semiconductor multilayer film but a dielectric multilayer film, the present invention can be applied to a material system in which it is difficult to obtain a high reflectance with a semiconductor multilayer film.

[0091]

According to the semiconductor light emitting / receiving device of the present invention, the surface emitting laser and the light receiving element for monitoring the output light from the surface emitting laser can be mounted on the same package or integrated on the same substrate. Also, a light receiving element that performs independent light detection independently of the output from the surface emitting laser, and a surface emitting laser mounted on the same package or integrated on the same substrate, and the output light from the surface emitting laser and the light receiving element A configuration in which the input light propagates through the same optical fiber can be realized. Alternatively, an optical bistable element in which a surface emitting laser and a light receiving element are hybridly integrated can be realized. Furthermore, (1) the surface emitting laser and the light receiving element are not lattice-matched, but the semiconductor substrate for forming the surface emitting laser is a material system that is transparent to input / output light; (2) the surface emitting laser and the light receiving element Are lattice-matched, but the semiconductor substrate for forming the surface-emitting laser is a material system that is opaque to input / output light. (3) The surface-emitting laser and the light receiving element are not lattice-matched, An optimal structure can be manufactured for each of the four cases in which the semiconductor substrate for forming the semiconductor substrate is opaque to input / output light, and (4) the material system is difficult to obtain a high reflectance with a semiconductor multilayer film.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor light emitting and receiving device according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a semiconductor light emitting and receiving device according to a second embodiment of the present invention;

FIG. 3 is a sectional view of a semiconductor light emitting and receiving device according to a third embodiment of the present invention;

FIG. 4 is a sectional view of a semiconductor light emitting and receiving device according to a fourth embodiment of the present invention;

FIG. 5 is a sectional view of a semiconductor light emitting and receiving device according to a fifth embodiment of the present invention.

FIG. 6 is a sectional view of a semiconductor light emitting and receiving device according to a sixth embodiment of the present invention.

FIG. 7 is a sectional view of a semiconductor light emitting and receiving device according to a seventh embodiment of the present invention.

FIG. 8 is a sectional view of a semiconductor light emitting and receiving device according to an eighth embodiment of the present invention.

FIG. 9 is a sectional view of a semiconductor light emitting and receiving device according to a ninth embodiment of the present invention;

FIG. 10 is a sectional view of a semiconductor light emitting and receiving device according to a tenth embodiment of the present invention.

FIG. 11 is a sectional view of a semiconductor light emitting and receiving device according to an eleventh embodiment of the present invention.

FIG. 12 is a sectional view of a semiconductor light emitting and receiving device according to a twelfth embodiment of the present invention.

FIG. 13 is a sectional view of a semiconductor light emitting and receiving device according to a thirteenth embodiment of the present invention.

FIG. 14 is a sectional view of a semiconductor light emitting and receiving device according to a fourteenth embodiment of the present invention;

FIG. 15 is a sectional view of a semiconductor light emitting and receiving device according to a fifteenth embodiment of the present invention;

FIG. 16 is a sectional view of a semiconductor light emitting and receiving device according to a sixteenth embodiment of the present invention;

FIG. 17 is a sectional view of a semiconductor light emitting and receiving device according to a seventeenth embodiment of the present invention;

FIG. 18 is a sectional view of a semiconductor light emitting and receiving device according to an eighteenth embodiment of the present invention;

FIG. 19 is a sectional view of a semiconductor light emitting and receiving device according to a nineteenth embodiment of the present invention;

FIG. 20 is a sectional view of a semiconductor light emitting and receiving device according to a twentieth embodiment of the present invention;

FIG. 21 is a cross-sectional view of a conventional semiconductor light receiving and emitting device.

FIG. 22 is a sectional view of a conventional semiconductor light receiving and emitting device.

FIG. 23 is a sectional view of a conventional semiconductor light receiving and emitting device.

[Explanation of symbols]

 101 first semiconductor substrate 104 second semiconductor substrate 110 surface emitting laser 113 light receiving element 114 first output light 117 second output light 701 semiconductor substrate 708 surface emitting laser 709 light receiving element 714 first output light 715 second Output light 1101 semiconductor substrate 1102 semiconductor thin film 1105 surface emitting laser 1109 light receiving element 1110 first output light 1111 second output light 1701 semiconductor substrate 1702 semiconductor thin film 1707 surface emitting laser 1710 light receiving element 1711 first output light 1712 second Output light

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 31/12 H01L 33/00

Claims (29)

(57) [Claims] A first semiconductor substrate having a first main surface and a second main surface; and a first semiconductor substrate having a third main surface and a fourth main surface.
A second semiconductor substrate on which the third main surface on a main surface is fixed to the first semiconductor substrate so as to face a surface emitting laser formed on the third on the main surface, the surface emitting laser A first light receiving element formed on the first main surface opposite to the first main surface;
A second light receiving element formed outside the first light receiving element on the first main surface, a first output light emitted from the surface emitting laser across the fourth main surface, A second output light emitted from the surface emitting laser and incident on the first light receiving element; and an input light transmitted through the second semiconductor substrate and incident on the second light receiving element. Semiconductor light emitting and receiving device. 2. A surface emitting laser comprising a lower reflector formed on a second semiconductor substrate, an active layer formed on the lower reflector, and an upper reflector formed on the active layer. as a component, a semiconductor light emitting and receiving device according to claim 1, wherein the input light is small the area of the lower reflector than the cross-sectional area of the input light at a position across said bottom reflector. 3. A surface emitting laser mainly includes a lower reflector formed on a second semiconductor substrate, an active layer formed on the lower reflector, and an upper reflector formed on the active layer. As constituent elements, the wavelengths of the input light and the first output light are different,
The lower reflector reflectance of the semiconductor light emitting and receiving device according to claim 1, wherein a lower than the reflectance of the lower reflector relative to said first output light with respect to the input light. 4. A semiconductor substrate, a lower reflector formed on the semiconductor substrate, an active layer formed on the lower reflector, and a first conductive layer formed on the active layer. An upper reflector, a high-resistance second upper reflector formed outside the first upper reflector on the active layer, and a light-receiving layer formed on the second upper reflector. The first upper reflector, a surface emitting laser having the active layer and the lower reflector as main components, a light receiving element having the light receiving layer as a main component, and a tip close to the upper reflector. An optical fiber fixed substantially perpendicular to the semiconductor substrate, output light emitted from the surface emitting laser and incident on the optical fiber, and input light emitted from the optical fiber and incident on the light receiving element. Semiconductor receiving and receiving characterized by having Apparatus. 5. The semiconductor light emitting / receiving device according to claim 4 , wherein the light receiving element is mainly composed of a light receiving layer and a comb-shaped electrode formed on the light receiving layer. 6. A semiconductor substrate, a semiconductor thin film comprising a lower reflector, an active layer, and an upper reflector fixed on the semiconductor substrate, and the lower reflector formed in a partial region of the semiconductor thin film. A surface emitting laser having the active layer and the upper reflector as main components, a light receiving element formed on a main surface of the semiconductor substrate facing the surface emitting laser, and a lower reflection of the surface emitting laser A semiconductor light emitting / receiving device comprising: a first output light emitted from a light emitting device; and a second output light emitted from the upper reflector of the surface emitting laser and incident on the light receiving element. 7. A wiring formed on a main surface of a semiconductor substrate,
7. The semiconductor light emitting / receiving device according to claim 6 , further comprising: an electrode formed on the upper reflector and pressed to the wiring, and a resin fixing the semiconductor substrate and the semiconductor thin film. 8. A semiconductor substrate, a semiconductor thin film comprising a lower reflector, an active layer and an upper reflector fixed on the semiconductor substrate, and the lower reflector formed in a partial region of the semiconductor thin film, A surface emitting laser having the active layer and the upper reflector as main components, a light receiving element formed on a main surface of the semiconductor substrate facing the surface emitting laser, and a lower reflection of the surface emitting laser A semiconductor light emitting / receiving device comprising: output light emitted from a vessel; and input light transmitted through the semiconductor thin film and incident on the light receiving element. 9. different wavelengths of input light and output light, the reflectivity of the lower reflector with respect to the input light, according to claim 8, wherein a lower than the reflectance of the lower reflector with respect to the output light Semiconductor light emitting and receiving device. 10. The semiconductor thin film has an etch stop layer, and a lower reflector, an active layer and an upper reflector are formed on the etch stop layer, and at a position where input light crosses the lower reflector. 9. The semiconductor light emitting and receiving device according to claim 8, wherein an area of said lower reflector is smaller than a cross-sectional area of said input light. 11. A semiconductor substrate, a semiconductor thin film including a lower reflector, an active layer, and an upper reflector fixed on the semiconductor substrate, and formed in a partial region of the semiconductor thin film.
A surface emitting laser having the lower reflector, the active layer, and the upper reflector as main components; a light receiving element formed on a main surface of the semiconductor substrate so as to face the surface emitting laser; A first output light emitted from the lower reflector of the laser, a second output light emitted from the upper reflector of the surface emitting laser and incident on the light receiving element, and transmitted through the semiconductor thin film A semiconductor light receiving / emitting device, comprising: input light incident on the light receiving element. 12. A semiconductor thin film having an etch stop layer, wherein a lower reflector, an active layer and an upper reflector are formed on the etch stop layer, and at a position where input light crosses the lower reflector. 12. The semiconductor according to claim 11, wherein the area of the lower reflector is smaller than the cross-sectional area of the input light, and the reflectivity of the upper reflector to output light is higher than the reflectivity of the lower reflector. Light emitting and receiving device. 13. A semiconductor substrate, a semiconductor thin film comprising a lower reflector, an active layer, and an upper reflector fixed on the semiconductor substrate, and formed in a partial region of the semiconductor thin film.
A surface emitting laser having the lower reflector, the active layer, and the upper reflector as main components, a first light receiving element formed on a main surface of the semiconductor substrate to face the surface emitting laser, A second light receiving element formed outside the first light receiving element on the main surface; a first output light emitted from the lower reflector of the surface emitting laser; A semiconductor comprising: a second output light emitted from an upper reflector and incident on the first light receiving element; and an input light transmitted through the semiconductor thin film and incident on the second light receiving element. Light emitting and receiving device. 14. A semiconductor thin film having an etch stop layer, wherein a lower reflector, an active layer and an upper reflector are formed on the etch stop layer and at a position where input light crosses the lower reflector. 14. The semiconductor light emitting and receiving device according to claim 13, wherein an area of the lower reflector is smaller than a sectional area of the input light. 15. A semiconductor substrate, a semiconductor thin film comprising a lower reflector, an active layer, and an upper reflector fixed on the semiconductor substrate, and formed in a partial region of the semiconductor thin film.
A surface emitting laser having the lower reflector, the active layer, and the upper reflector as main components; a light receiving element formed on a main surface of the semiconductor substrate so as to face the surface emitting laser; A first output light emitted from the lower reflector of the laser, a second output light emitted from the upper reflector of the surface emitting laser and incident on the light receiving element, and transmitted through the semiconductor thin film A semiconductor light receiving / emitting device, comprising: input light incident on the light receiving element. 16. The semiconductor light emitting and receiving device according to claim 15 , wherein the surface emitting laser and the light receiving element are electrically connected in series, and the light receiving element has an amplifying action. 17. A semiconductor substrate, a semiconductor thin film comprising an etching stop layer and an active layer fixed on the semiconductor substrate, an upper reflector comprising a dielectric multilayer film deposited on the active layer, A lower reflector made of a dielectric multilayer film, deposited on an etching stop layer, and main components of the lower reflector, the active layer and the upper reflector formed in a partial region of the semiconductor thin film; A surface emitting laser, a light receiving element formed on a main surface of the semiconductor substrate facing the surface emitting laser, a first output light emitted from the lower reflector of the surface emitting laser, And a second output light emitted from the upper reflector of the surface emitting laser and incident on the light receiving element. 18. A semiconductor device comprising: a wiring formed on a main surface of a semiconductor substrate; an electrode formed on an upper reflector and crimped to the wiring; and a resin for fixing the semiconductor substrate and the semiconductor thin film. The semiconductor light emitting and receiving device according to claim 17 , wherein 19. A semiconductor substrate, a semiconductor thin film comprising an etching stop layer and an active layer fixed on the semiconductor substrate, an upper reflector comprising a dielectric multilayer film deposited on the active layer, A lower reflector made of a dielectric multilayer film, deposited on an etching stop layer, and main components of the lower reflector, the active layer and the upper reflector formed in a partial region of the semiconductor thin film; A surface emitting laser, a light receiving element formed on a main surface of the semiconductor substrate facing the surface emitting laser, output light emitted from the lower reflector of the surface emitting laser, and the semiconductor thin film. A semiconductor light receiving and emitting device, comprising: input light that is transmitted and incident on the light receiving element. 20. Unlike the wavelength of the input light and output light, the reflectivity of the lower reflector with respect to the input light, according to claim 19, wherein a lower than the reflectance of the lower reflector with respect to the output light Semiconductor light emitting and receiving device. 21. A semiconductor substrate, a semiconductor thin film comprising an etching stop layer and an active layer fixed on the semiconductor substrate, an upper reflector comprising a dielectric multilayer film deposited on the active layer, A lower reflector made of a dielectric multilayer film, deposited on an etching stop layer, and main components of the lower reflector, the active layer and the upper reflector formed in a partial region of the semiconductor thin film; A surface emitting laser, a light receiving element formed on a main surface of the semiconductor substrate facing the surface emitting laser, a first output light emitted from the lower reflector of the surface emitting laser, A semiconductor light receiving device comprising: a second output light emitted from the upper reflector of the surface emitting laser and incident on the light receiving element; and an input light transmitted through the semiconductor thin film and incident on the light receiving element. Glow Location. 22. The input light and the first output light have different wavelengths,
The reflectivity of the lower reflector for the input light is lower than the reflectivity of the lower reflector for the first output light, and the reflectivity of the upper reflector for the second output light is the first reflectivity.
22. The semiconductor light emitting and receiving device according to claim 21, wherein a reflectance of the lower reflector with respect to the output light is higher than that of the lower reflector. 23. A semiconductor substrate, a semiconductor thin film comprising an etching stop layer and an active layer fixed on the semiconductor substrate, an upper reflector comprising a dielectric multilayer film deposited on the active layer, A lower reflector made of a dielectric multilayer film, deposited on an etching stop layer, and main components of the lower reflector, the active layer and the upper reflector formed in a partial region of the semiconductor thin film; A surface emitting laser, a first light receiving element formed on a main surface of the semiconductor substrate facing the surface emitting laser, and a first light receiving element formed outside the first light receiving element on the main surface. 2 light receiving element, first output light emitted from the lower reflector of the surface emitting laser, and second output light emitted from the upper reflector of the surface emitting laser and incident on the first light receiving element. Output light and the semiconductor thin film The semiconductor light emitting and receiving device, characterized in that transmission to the and an input light incident on the second light receiving element. 24. The input light and the first output light have different wavelengths,
24. The semiconductor light emitting / receiving device according to claim 23 , wherein a reflectance of the lower reflector for the input light is lower than a reflectance of the lower reflector for the first output light. 25. A first light receiving element formed on the first main surface of a first semiconductor substrate having a first main surface and a second main surface, and the first light receiving element on the first main surface. A second light receiving element formed outside the light receiving element, and a surface emitting laser formed on the third main surface of a second semiconductor substrate having a third main surface and a fourth main surface; The first semiconductor substrate and the second semiconductor substrate are fixed so that the surface emitting laser and the first light receiving element face each other, and a first output from the surface emitting laser across the fourth main surface is provided. Light is emitted, and second output light emitted from the surface emitting laser is incident on the first light receiving element, transmitted through the second semiconductor substrate, and input light is incident on the second light receiving element. A semiconductor light emitting and receiving device, comprising: 26. A surface emitting laser mainly comprising a lower reflector formed on a second semiconductor substrate, an active layer formed on the lower reflector, and an upper reflector formed on the active layer. 26. The semiconductor light emitting and receiving device according to claim 25, wherein the lower reflector has an area smaller than a cross-sectional area of the input light at a position where the input light crosses the lower reflector. 27. A surface emitting laser mainly includes a lower reflector formed on a second semiconductor substrate, an active layer formed on the lower reflector, and an upper reflector formed on the active layer. As a constituent element, the wavelengths of the input light and the first output light are different, and the reflectance of the lower reflector for the input light is lower than the reflectance of the lower reflector for the first output light. 26. The semiconductor light emitting and receiving device according to claim 25 , wherein 28. A semiconductor substrate, a lower reflector formed on the semiconductor substrate, an active layer formed on the lower reflector, and a first conductive layer formed on the active layer.
An upper reflector, a high-resistance second upper reflector formed outside the first upper reflector on the active layer, and a light receiving layer formed on the second upper reflector. A surface emitting laser is configured with the first upper reflector, the active layer, and the lower reflector as main components, a light receiving element is configured with the light receiving layer as a main component, and the upper reflector The tip is close to the semiconductor substrate, and the optical fiber is fixed substantially vertically to the semiconductor substrate, the output light emitted from the surface emitting laser is incident on the optical fiber, and the input light emitted from the optical fiber is A semiconductor light emitting / receiving device, which is incident on the light receiving element. 29. The semiconductor light emitting / receiving device according to claim 28 , wherein the light receiving element is mainly composed of a light receiving layer and a comb-shaped electrode formed on the light receiving layer.