JP4497791B2 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
JP4497791B2
JP4497791B2 JP2002133674A JP2002133674A JP4497791B2 JP 4497791 B2 JP4497791 B2 JP 4497791B2 JP 2002133674 A JP2002133674 A JP 2002133674A JP 2002133674 A JP2002133674 A JP 2002133674A JP 4497791 B2 JP4497791 B2 JP 4497791B2
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Japan
Prior art keywords
wiring
cell
power supply
cells
width
Prior art date
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Expired - Fee Related
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JP2002133674A
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English (en)
Japanese (ja)
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JP2003332428A5 (enExample
JP2003332428A (ja
Inventor
正幸 大林
貴司 横井
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002133674A priority Critical patent/JP4497791B2/ja
Priority to US10/431,398 priority patent/US7119383B2/en
Publication of JP2003332428A publication Critical patent/JP2003332428A/ja
Publication of JP2003332428A5 publication Critical patent/JP2003332428A5/ja
Priority to US11/520,622 priority patent/US7365376B2/en
Priority to US12/040,127 priority patent/US7476915B2/en
Application granted granted Critical
Publication of JP4497791B2 publication Critical patent/JP4497791B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002133674A 2002-05-09 2002-05-09 半導体集積回路 Expired - Fee Related JP4497791B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002133674A JP4497791B2 (ja) 2002-05-09 2002-05-09 半導体集積回路
US10/431,398 US7119383B2 (en) 2002-05-09 2003-05-08 Arrangement of wiring lines including power source lines and channel wirings of a semiconductor integrated circuit having plural cells
US11/520,622 US7365376B2 (en) 2002-05-09 2006-09-14 Semiconductor integrated circuit
US12/040,127 US7476915B2 (en) 2002-05-09 2008-02-29 Semiconductor integrated circuit including a first region and a second region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002133674A JP4497791B2 (ja) 2002-05-09 2002-05-09 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2003332428A JP2003332428A (ja) 2003-11-21
JP2003332428A5 JP2003332428A5 (enExample) 2005-09-15
JP4497791B2 true JP4497791B2 (ja) 2010-07-07

Family

ID=29397433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002133674A Expired - Fee Related JP4497791B2 (ja) 2002-05-09 2002-05-09 半導体集積回路

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US (3) US7119383B2 (enExample)
JP (1) JP4497791B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100568790B1 (ko) * 2003-12-30 2006-04-07 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 및 그 형성 방법
US7200829B2 (en) * 2004-06-24 2007-04-03 International Business Machines Corporation I/O circuit power routing system and method
JP4745697B2 (ja) * 2005-03-29 2011-08-10 富士通セミコンダクター株式会社 複数の配線層を有する半導体回路の端子層設定方法、端子層設定プログラム、配線端子延長処理プログラム、および、その端子層を設定に用いられる端子延長用コンポーネント
JP2007134468A (ja) * 2005-11-10 2007-05-31 Kawasaki Microelectronics Kk 半導体集積回路
US7522642B2 (en) * 2006-03-29 2009-04-21 Amo Development Llc Method and system for laser amplification using a dual crystal Pockels cell
US20070235877A1 (en) * 2006-03-31 2007-10-11 Miriam Reshotko Integration scheme for semiconductor photodetectors on an integrated circuit chip
US8791572B2 (en) * 2007-07-26 2014-07-29 International Business Machines Corporation Buried metal-semiconductor alloy layers and structures and methods for fabrication thereof
GB2466313A (en) 2008-12-22 2010-06-23 Cambridge Silicon Radio Ltd Radio Frequency CMOS Transistor
KR101585491B1 (ko) * 2009-10-29 2016-01-15 삼성전자주식회사 도전 패턴 구조물 및 그 제조 방법
US10410934B2 (en) * 2017-12-07 2019-09-10 Micron Technology, Inc. Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure
US11004798B2 (en) * 2019-10-02 2021-05-11 Micron Technology, Inc. Apparatuses including conductive structure layouts
US11113443B1 (en) 2020-06-12 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with thicker metal lines on lower metallization layer

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4737836A (en) * 1983-12-30 1988-04-12 International Business Machines Corporation VLSI integrated circuit having parallel bonding areas
JPS62119936A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd コンプリメンタリ−ｌｓｉチツプ
JP2606845B2 (ja) * 1987-06-19 1997-05-07 富士通株式会社 半導体集積回路
US5321280A (en) * 1990-09-13 1994-06-14 Nec Corporation Composite semiconductor integrated circuit device
JP2894814B2 (ja) * 1990-09-28 1999-05-24 株式会社東芝 スタンダード・セル方式の半導体集積回路
JPH07130858A (ja) * 1993-11-08 1995-05-19 Fujitsu Ltd 半導体集積回路及び半導体集積回路製造方法
JP2919257B2 (ja) * 1993-12-15 1999-07-12 日本電気株式会社 多層配線半導体装置
JP3644138B2 (ja) * 1996-07-22 2005-04-27 ソニー株式会社 半導体集積回路及びその配置配線方法
US5923060A (en) * 1996-09-27 1999-07-13 In-Chip Systems, Inc. Reduced area gate array cell design based on shifted placement of alternate rows of cells
JP2991147B2 (ja) * 1997-01-30 1999-12-20 日本電気株式会社 スタンダードセルのレイアウト方式
JP2000003912A (ja) 1998-06-16 2000-01-07 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP3380465B2 (ja) * 1998-06-29 2003-02-24 松下電器産業株式会社 半導体装置
JP3236583B2 (ja) * 1999-06-24 2001-12-10 ローム株式会社 半導体集積回路装置
JP4018309B2 (ja) * 2000-02-14 2007-12-05 松下電器産業株式会社 回路パラメータ抽出方法、半導体集積回路の設計方法および装置
JP3672788B2 (ja) * 2000-02-24 2005-07-20 松下電器産業株式会社 半導体装置のセルレイアウト構造およびレイアウト設計方法
JP2002009160A (ja) * 2000-06-26 2002-01-11 Nec Microsystems Ltd 半導体集積回路の自動レイアウト方法、この方法で製造した半導体集積回路及びこの方法を記録した記録媒体
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
JP4454880B2 (ja) * 2001-03-22 2010-04-21 株式会社リコー 半導体集積回路およびその配置配線方法
JP5028714B2 (ja) * 2001-03-30 2012-09-19 富士通セミコンダクター株式会社 半導体集積回路装置、および配線方法
KR100410981B1 (ko) * 2001-05-18 2003-12-12 삼성전자주식회사 저저항을 갖는 반도체 소자의 금속배선구조 및 그의형성방법
US6803610B2 (en) * 2002-09-30 2004-10-12 Mosaid Technologies Incorporated Optimized memory cell physical arrangement
US6927429B2 (en) * 2003-02-14 2005-08-09 Freescale Semiconductor, Inc. Integrated circuit well bias circuity

Also Published As

Publication number Publication date
US7476915B2 (en) 2009-01-13
US20030209727A1 (en) 2003-11-13
US20080157381A1 (en) 2008-07-03
US20070007551A1 (en) 2007-01-11
US7119383B2 (en) 2006-10-10
JP2003332428A (ja) 2003-11-21
US7365376B2 (en) 2008-04-29

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