JP4493778B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4493778B2
JP4493778B2 JP2000017726A JP2000017726A JP4493778B2 JP 4493778 B2 JP4493778 B2 JP 4493778B2 JP 2000017726 A JP2000017726 A JP 2000017726A JP 2000017726 A JP2000017726 A JP 2000017726A JP 4493778 B2 JP4493778 B2 JP 4493778B2
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Japan
Prior art keywords
insulating film
film
hydrogen
tft
region
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Expired - Fee Related
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JP2000017726A
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English (en)
Japanese (ja)
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JP2000286426A (ja
JP2000286426A5 (enrdf_load_html_response
Inventor
舜平 山崎
勇臣 浅見
英人 北角
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000017726A priority Critical patent/JP4493778B2/ja
Publication of JP2000286426A publication Critical patent/JP2000286426A/ja
Publication of JP2000286426A5 publication Critical patent/JP2000286426A5/ja
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Publication of JP4493778B2 publication Critical patent/JP4493778B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2000017726A 1999-01-26 2000-01-26 半導体装置の作製方法 Expired - Fee Related JP4493778B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000017726A JP4493778B2 (ja) 1999-01-26 2000-01-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1775399 1999-01-26
JP11-17753 1999-01-26
JP2000017726A JP4493778B2 (ja) 1999-01-26 2000-01-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000286426A JP2000286426A (ja) 2000-10-13
JP2000286426A5 JP2000286426A5 (enrdf_load_html_response) 2007-03-08
JP4493778B2 true JP4493778B2 (ja) 2010-06-30

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Family Applications (1)

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JP2000017726A Expired - Fee Related JP4493778B2 (ja) 1999-01-26 2000-01-26 半導体装置の作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100740930B1 (ko) * 2000-10-26 2007-07-19 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
US7495390B2 (en) 2000-12-23 2009-02-24 Lg Display Co., Ltd. Electro-luminescence device with improved thermal conductivity
JP4137454B2 (ja) * 2001-01-17 2008-08-20 株式会社半導体エネルギー研究所 発光装置、電子機器及び発光装置の作製方法
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4382375B2 (ja) * 2003-03-13 2009-12-09 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタの製造方法
JP4640085B2 (ja) * 2005-09-30 2011-03-02 カシオ計算機株式会社 表示パネル
JP2007242895A (ja) 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
KR101776655B1 (ko) * 2010-07-01 2017-09-11 삼성디스플레이 주식회사 어레이 기판, 그 제조 방법, 및 상기 어레이 기판을 포함하는 표시 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3853395B2 (ja) * 1994-03-27 2006-12-06 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP3426063B2 (ja) * 1995-08-28 2003-07-14 シャープ株式会社 液晶表示装置及びその製造方法
JP3565983B2 (ja) * 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH113887A (ja) * 1997-06-12 1999-01-06 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP3382130B2 (ja) * 1997-07-25 2003-03-04 シャープ株式会社 薄膜トランジスタの製造方法

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JP2000286426A (ja) 2000-10-13

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