JP4493646B2 - 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法 - Google Patents

後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法 Download PDF

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JP4493646B2
JP4493646B2 JP2006502270A JP2006502270A JP4493646B2 JP 4493646 B2 JP4493646 B2 JP 4493646B2 JP 2006502270 A JP2006502270 A JP 2006502270A JP 2006502270 A JP2006502270 A JP 2006502270A JP 4493646 B2 JP4493646 B2 JP 4493646B2
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buffer
layer
target material
buffer structure
alloy
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JP2006518104A5 (enExample
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ウオーリス，デイビツド・ジヨン
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キネテイツク・リミテツド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2006502270A 2003-02-19 2004-02-16 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法 Expired - Fee Related JP4493646B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0303784A GB2398672A (en) 2003-02-19 2003-02-19 Group IIIA nitride buffer layers
PCT/GB2004/000560 WO2004075249A2 (en) 2003-02-19 2004-02-16 Buffer structure for modifying a silicon substrate

Publications (3)

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JP2006518104A JP2006518104A (ja) 2006-08-03
JP2006518104A5 JP2006518104A5 (enExample) 2007-03-15
JP4493646B2 true JP4493646B2 (ja) 2010-06-30

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JP2006502270A Expired - Fee Related JP4493646B2 (ja) 2003-02-19 2004-02-16 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法

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US (1) US7323764B2 (enExample)
EP (1) EP1595280B8 (enExample)
JP (1) JP4493646B2 (enExample)
CN (1) CN100382244C (enExample)
AT (1) ATE349774T1 (enExample)
DE (1) DE602004003910T2 (enExample)
GB (2) GB2398672A (enExample)
WO (1) WO2004075249A2 (enExample)

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US8106381B2 (en) * 2006-10-18 2012-01-31 Translucent, Inc. Semiconductor structures with rare-earths
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
US7799600B2 (en) 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US8039737B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Passive rare earth tandem solar cell
US8039738B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Active rare earth tandem solar cell
US8049100B2 (en) * 2007-07-26 2011-11-01 Translucent, Inc. Multijunction rare earth solar cell
EP2250674A4 (en) * 2008-01-28 2013-02-13 Amit Goyal SEMICONDUCTOR-BASED LARGE AREA FLEXIBLE ELECTRONIC ARRANGEMENTS
DE102009000514A1 (de) * 2009-01-30 2010-08-26 Robert Bosch Gmbh Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil
JP4597259B2 (ja) * 2009-03-27 2010-12-15 Ｄｏｗａホールディングス株式会社 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
GB2469448A (en) * 2009-04-14 2010-10-20 Qinetiq Ltd Strain Control in Semiconductor Devices
JP5614531B2 (ja) * 2010-03-12 2014-10-29 セイコーエプソン株式会社 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子
US9041027B2 (en) 2010-12-01 2015-05-26 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
KR101883840B1 (ko) * 2011-08-31 2018-08-01 엘지이노텍 주식회사 발광소자
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US20130099357A1 (en) * 2011-10-21 2013-04-25 Rytis Dargis Strain compensated reo buffer for iii-n on silicon
US8394194B1 (en) * 2012-06-13 2013-03-12 Rytis Dargis Single crystal reo buffer on amorphous SiOx
WO2014057748A1 (ja) * 2012-10-12 2014-04-17 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
TWI491068B (zh) 2012-11-08 2015-07-01 Ind Tech Res Inst 氮化物半導體結構
CN105393336B (zh) * 2013-07-22 2017-10-31 日本碍子株式会社 复合基板、其制造方法、功能元件以及晶种基板
EP3465744A1 (en) * 2016-06-02 2019-04-10 IQE Plc. Rare earth pnictides for strain management
KR102098572B1 (ko) * 2018-12-26 2020-04-08 한국세라믹기술원 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체
EP3786321A3 (de) 2019-08-27 2021-03-17 Albert-Ludwigs-Universität Freiburg Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
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Also Published As

Publication number Publication date
GB0303784D0 (en) 2003-03-26
EP1595280B8 (en) 2007-02-28
EP1595280B1 (en) 2006-12-27
GB0515760D0 (en) 2005-09-07
JP2006518104A (ja) 2006-08-03
CN1751379A (zh) 2006-03-22
GB2398672A (en) 2004-08-25
DE602004003910T2 (de) 2007-05-16
WO2004075249A2 (en) 2004-09-02
US7323764B2 (en) 2008-01-29
US20060145186A1 (en) 2006-07-06
ATE349774T1 (de) 2007-01-15
DE602004003910D1 (de) 2007-02-08
EP1595280A2 (en) 2005-11-16
WO2004075249A3 (en) 2004-10-28
GB2413898B (en) 2006-08-16
CN100382244C (zh) 2008-04-16
GB2413898A (en) 2005-11-09

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