DE602004003910T2 - Pufferstruktur für Heteroepitaxie auf einem Siliciumsubstrat - Google Patents
Pufferstruktur für Heteroepitaxie auf einem Siliciumsubstrat Download PDFInfo
- Publication number
- DE602004003910T2 DE602004003910T2 DE602004003910T DE602004003910T DE602004003910T2 DE 602004003910 T2 DE602004003910 T2 DE 602004003910T2 DE 602004003910 T DE602004003910 T DE 602004003910T DE 602004003910 T DE602004003910 T DE 602004003910T DE 602004003910 T2 DE602004003910 T2 DE 602004003910T2
- Authority
- DE
- Germany
- Prior art keywords
- buffer
- layer
- target material
- alloy
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000001534 heteroepitaxy Methods 0.000 title 1
- 239000013077 target material Substances 0.000 claims abstract description 54
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 37
- 239000000956 alloy Substances 0.000 claims abstract description 37
- 150000004767 nitrides Chemical class 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 16
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 15
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 38
- 230000012010 growth Effects 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 22
- 238000011161 development Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 10
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- RUBWKNVFTBEPTE-UHFFFAOYSA-N [Sc].[La] Chemical compound [Sc].[La] RUBWKNVFTBEPTE-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 4
- 229910052767 actinium Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 101
- 239000000463 material Substances 0.000 description 17
- 230000018109 developmental process Effects 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- -1 silicon nitrides Chemical class 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010420 art technique Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 1
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NYEWSFOPOMFNLD-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Ba+2].[La+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Ba+2].[La+3] NYEWSFOPOMFNLD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- IGPAMRAHTMKVDN-UHFFFAOYSA-N strontium dioxido(dioxo)manganese lanthanum(3+) Chemical compound [Sr+2].[La+3].[O-][Mn]([O-])(=O)=O IGPAMRAHTMKVDN-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0303784 | 2003-02-19 | ||
| GB0303784A GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
| PCT/GB2004/000560 WO2004075249A2 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE602004003910D1 DE602004003910D1 (de) | 2007-02-08 |
| DE602004003910T2 true DE602004003910T2 (de) | 2007-05-16 |
Family
ID=9953280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004003910T Expired - Lifetime DE602004003910T2 (de) | 2003-02-19 | 2004-02-16 | Pufferstruktur für Heteroepitaxie auf einem Siliciumsubstrat |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7323764B2 (enExample) |
| EP (1) | EP1595280B8 (enExample) |
| JP (1) | JP4493646B2 (enExample) |
| CN (1) | CN100382244C (enExample) |
| AT (1) | ATE349774T1 (enExample) |
| DE (1) | DE602004003910T2 (enExample) |
| GB (2) | GB2398672A (enExample) |
| WO (1) | WO2004075249A2 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1883103A3 (en) * | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
| US7494911B2 (en) | 2006-09-27 | 2009-02-24 | Intel Corporation | Buffer layers for device isolation of devices grown on silicon |
| US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
| US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| US7799600B2 (en) | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Doped diamond LED devices and associated methods |
| US8049100B2 (en) * | 2007-07-26 | 2011-11-01 | Translucent, Inc. | Multijunction rare earth solar cell |
| US8039737B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Passive rare earth tandem solar cell |
| US8039738B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Active rare earth tandem solar cell |
| CN101981699B (zh) * | 2008-01-28 | 2013-02-06 | 阿米特·戈亚尔 | 基于半导体的大面积柔性电子器件 |
| DE102009000514A1 (de) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil |
| KR101321654B1 (ko) * | 2009-03-27 | 2013-10-23 | 도와 일렉트로닉스 가부시키가이샤 | Ⅲ족 질화물 반도체 성장용 기판, ⅲ족 질화물 반도체 에피택셜 기판, ⅲ족 질화물 반도체 소자 및 ⅲ족 질화물 반도체 자립 기판, 및 이들의 제조 방법 |
| GB2469448A (en) * | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | Strain Control in Semiconductor Devices |
| JP5614531B2 (ja) * | 2010-03-12 | 2014-10-29 | セイコーエプソン株式会社 | 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子 |
| WO2012074523A1 (en) | 2010-12-01 | 2012-06-07 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
| US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
| KR101883840B1 (ko) * | 2011-08-31 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 |
| US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
| US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
| US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
| US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
| US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
| US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
| US20130099357A1 (en) * | 2011-10-21 | 2013-04-25 | Rytis Dargis | Strain compensated reo buffer for iii-n on silicon |
| US8394194B1 (en) * | 2012-06-13 | 2013-03-12 | Rytis Dargis | Single crystal reo buffer on amorphous SiOx |
| WO2014057748A1 (ja) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法 |
| CN103794460B (zh) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
| TWI491068B (zh) * | 2012-11-08 | 2015-07-01 | Ind Tech Res Inst | 氮化物半導體結構 |
| WO2015012218A1 (ja) * | 2013-07-22 | 2015-01-29 | 日本碍子株式会社 | 複合基板、その製造方法、機能素子および種結晶基板 |
| TW201810542A (zh) * | 2016-06-02 | 2018-03-16 | 英商Ｉｑｅ有限公司 | 用於機械性地層疊不同的半導體晶圓的稀土族中間層 |
| KR102098572B1 (ko) * | 2018-12-26 | 2020-04-08 | 한국세라믹기술원 | 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체 |
| EP3786321A3 (de) | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
| US20240084479A1 (en) * | 2021-01-19 | 2024-03-14 | Alliance For Sustainable Energy, Llc | Dynamic hvpe of compositionally graded buffer layers |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS50102581A (enExample) * | 1974-01-16 | 1975-08-13 | ||
| US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| JP3557011B2 (ja) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | 半導体発光素子、及びその製造方法 |
| JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Ｔｄｋ株式会社 | 電子デバイス用基板 |
| US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| JP3853942B2 (ja) * | 1997-11-12 | 2006-12-06 | 昭和電工株式会社 | エピタキシャルウェハ |
| US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
| US5998232A (en) * | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
| US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| JP2001230447A (ja) * | 2000-02-16 | 2001-08-24 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
| JP3785059B2 (ja) * | 2001-06-25 | 2006-06-14 | 宣彦 澤木 | 窒化物半導体の製造方法 |
| US6646293B2 (en) * | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6472694B1 (en) * | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
| JP2002222803A (ja) * | 2001-12-03 | 2002-08-09 | Kyocera Corp | 半導体製造用耐食性部材 |
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2003
- 2003-02-19 GB GB0303784A patent/GB2398672A/en not_active Withdrawn
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2004
- 2004-02-16 EP EP04711402A patent/EP1595280B8/en not_active Expired - Lifetime
- 2004-02-16 JP JP2006502270A patent/JP4493646B2/ja not_active Expired - Fee Related
- 2004-02-16 WO PCT/GB2004/000560 patent/WO2004075249A2/en not_active Ceased
- 2004-02-16 CN CNB2004800046781A patent/CN100382244C/zh not_active Expired - Fee Related
- 2004-02-16 AT AT04711402T patent/ATE349774T1/de not_active IP Right Cessation
- 2004-02-16 US US10/545,911 patent/US7323764B2/en not_active Expired - Lifetime
- 2004-02-16 GB GB0515760A patent/GB2413898B/en not_active Expired - Fee Related
- 2004-02-16 DE DE602004003910T patent/DE602004003910T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2398672A (en) | 2004-08-25 |
| JP2006518104A (ja) | 2006-08-03 |
| WO2004075249A3 (en) | 2004-10-28 |
| EP1595280B1 (en) | 2006-12-27 |
| EP1595280B8 (en) | 2007-02-28 |
| US7323764B2 (en) | 2008-01-29 |
| CN100382244C (zh) | 2008-04-16 |
| US20060145186A1 (en) | 2006-07-06 |
| GB0303784D0 (en) | 2003-03-26 |
| ATE349774T1 (de) | 2007-01-15 |
| CN1751379A (zh) | 2006-03-22 |
| WO2004075249A2 (en) | 2004-09-02 |
| GB0515760D0 (en) | 2005-09-07 |
| DE602004003910D1 (de) | 2007-02-08 |
| GB2413898B (en) | 2006-08-16 |
| EP1595280A2 (en) | 2005-11-16 |
| JP4493646B2 (ja) | 2010-06-30 |
| GB2413898A (en) | 2005-11-09 |
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