GB2398672A - Group IIIA nitride buffer layers - Google Patents
Group IIIA nitride buffer layers Download PDFInfo
- Publication number
- GB2398672A GB2398672A GB0303784A GB0303784A GB2398672A GB 2398672 A GB2398672 A GB 2398672A GB 0303784 A GB0303784 A GB 0303784A GB 0303784 A GB0303784 A GB 0303784A GB 2398672 A GB2398672 A GB 2398672A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- buffer
- target material
- alloy
- buffer structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 39
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 37
- 239000000956 alloy Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 239000000203 mixture Substances 0.000 claims abstract description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 6
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 114
- 239000013077 target material Substances 0.000 claims description 52
- 239000013078 crystal Substances 0.000 claims description 32
- 230000012010 growth Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 10
- 229910052706 scandium Inorganic materials 0.000 claims description 8
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 6
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- RUBWKNVFTBEPTE-UHFFFAOYSA-N [Sc].[La] Chemical compound [Sc].[La] RUBWKNVFTBEPTE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 19
- 238000000151 deposition Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000010420 art technique Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- -1 said structure Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 1
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000713 I alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ARWMTMANOCYRLU-UHFFFAOYSA-N [Ca].[La] Chemical compound [Ca].[La] ARWMTMANOCYRLU-UHFFFAOYSA-N 0.000 description 1
- NYEWSFOPOMFNLD-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Ba+2].[La+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Ba+2].[La+3] NYEWSFOPOMFNLD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- IGPAMRAHTMKVDN-UHFFFAOYSA-N strontium dioxido(dioxo)manganese lanthanum(3+) Chemical compound [Sr+2].[La+3].[O-][Mn]([O-])(=O)=O IGPAMRAHTMKVDN-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0303784A GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
| GB0515760A GB2413898B (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
| AT04711402T ATE349774T1 (de) | 2003-02-19 | 2004-02-16 | Pufferstruktur für heteroepitaxie auf einem siliziumsubstrat |
| DE602004003910T DE602004003910T2 (de) | 2003-02-19 | 2004-02-16 | Pufferstruktur für Heteroepitaxie auf einem Siliciumsubstrat |
| CNB2004800046781A CN100382244C (zh) | 2003-02-19 | 2004-02-16 | 用于修正硅衬底的缓冲结构 |
| EP04711402A EP1595280B8 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for heteroepitaxy on a silicon substrate |
| PCT/GB2004/000560 WO2004075249A2 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
| US10/545,911 US7323764B2 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
| JP2006502270A JP4493646B2 (ja) | 2003-02-19 | 2004-02-16 | 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0303784A GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0303784D0 GB0303784D0 (en) | 2003-03-26 |
| GB2398672A true GB2398672A (en) | 2004-08-25 |
Family
ID=9953280
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0303784A Withdrawn GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
| GB0515760A Expired - Fee Related GB2413898B (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0515760A Expired - Fee Related GB2413898B (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7323764B2 (enExample) |
| EP (1) | EP1595280B8 (enExample) |
| JP (1) | JP4493646B2 (enExample) |
| CN (1) | CN100382244C (enExample) |
| AT (1) | ATE349774T1 (enExample) |
| DE (1) | DE602004003910T2 (enExample) |
| GB (2) | GB2398672A (enExample) |
| WO (1) | WO2004075249A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008668B2 (en) | 2007-05-31 | 2011-08-30 | Chien-Min Sung | Doped diamond LED devices and associated methods |
| US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| EP2413350A4 (en) * | 2009-03-27 | 2013-10-23 | Dowa Holdings Co Ltd | SUBSTRATE FOR GROUNDING GROUP III NITRIDE SEMICONDUCTORS, EPITACTICAL SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR ELEMENT, FREELRAGING SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, AND METHOD OF MANUFACTURING THEREOF |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1883103A3 (en) * | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
| US7494911B2 (en) | 2006-09-27 | 2009-02-24 | Intel Corporation | Buffer layers for device isolation of devices grown on silicon |
| US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
| US8039737B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Passive rare earth tandem solar cell |
| US8039738B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Active rare earth tandem solar cell |
| US8049100B2 (en) * | 2007-07-26 | 2011-11-01 | Translucent, Inc. | Multijunction rare earth solar cell |
| EP2250674A4 (en) * | 2008-01-28 | 2013-02-13 | Amit Goyal | SEMICONDUCTOR-BASED LARGE AREA FLEXIBLE ELECTRONIC ARRANGEMENTS |
| DE102009000514A1 (de) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil |
| GB2469448A (en) * | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | Strain Control in Semiconductor Devices |
| JP5614531B2 (ja) * | 2010-03-12 | 2014-10-29 | セイコーエプソン株式会社 | 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子 |
| US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
| US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
| KR101883840B1 (ko) * | 2011-08-31 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 |
| US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
| US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
| US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
| US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
| US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
| US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
| US20130099357A1 (en) * | 2011-10-21 | 2013-04-25 | Rytis Dargis | Strain compensated reo buffer for iii-n on silicon |
| US8394194B1 (en) * | 2012-06-13 | 2013-03-12 | Rytis Dargis | Single crystal reo buffer on amorphous SiOx |
| WO2014057748A1 (ja) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法 |
| CN103794460B (zh) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
| TWI491068B (zh) | 2012-11-08 | 2015-07-01 | Ind Tech Res Inst | 氮化物半導體結構 |
| CN105393336B (zh) * | 2013-07-22 | 2017-10-31 | 日本碍子株式会社 | 复合基板、其制造方法、功能元件以及晶种基板 |
| EP3465744A1 (en) * | 2016-06-02 | 2019-04-10 | IQE Plc. | Rare earth pnictides for strain management |
| KR102098572B1 (ko) * | 2018-12-26 | 2020-04-08 | 한국세라믹기술원 | 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체 |
| EP3786321A3 (de) | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
| US20240084479A1 (en) * | 2021-01-19 | 2024-03-14 | Alliance For Sustainable Energy, Llc | Dynamic hvpe of compositionally graded buffer layers |
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- 2004-02-16 CN CNB2004800046781A patent/CN100382244C/zh not_active Expired - Fee Related
- 2004-02-16 GB GB0515760A patent/GB2413898B/en not_active Expired - Fee Related
- 2004-02-16 AT AT04711402T patent/ATE349774T1/de not_active IP Right Cessation
- 2004-02-16 DE DE602004003910T patent/DE602004003910T2/de not_active Expired - Lifetime
- 2004-02-16 EP EP04711402A patent/EP1595280B8/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| US8506707B1 (en) | 2007-02-07 | 2013-08-13 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| US8008668B2 (en) | 2007-05-31 | 2011-08-30 | Chien-Min Sung | Doped diamond LED devices and associated methods |
| EP2413350A4 (en) * | 2009-03-27 | 2013-10-23 | Dowa Holdings Co Ltd | SUBSTRATE FOR GROUNDING GROUP III NITRIDE SEMICONDUCTORS, EPITACTICAL SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR ELEMENT, FREELRAGING SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, AND METHOD OF MANUFACTURING THEREOF |
| US8878189B2 (en) | 2009-03-27 | 2014-11-04 | Dowa Holdings Co., Ltd. | Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0303784D0 (en) | 2003-03-26 |
| EP1595280B8 (en) | 2007-02-28 |
| EP1595280B1 (en) | 2006-12-27 |
| GB0515760D0 (en) | 2005-09-07 |
| JP2006518104A (ja) | 2006-08-03 |
| CN1751379A (zh) | 2006-03-22 |
| DE602004003910T2 (de) | 2007-05-16 |
| WO2004075249A2 (en) | 2004-09-02 |
| JP4493646B2 (ja) | 2010-06-30 |
| US7323764B2 (en) | 2008-01-29 |
| US20060145186A1 (en) | 2006-07-06 |
| ATE349774T1 (de) | 2007-01-15 |
| DE602004003910D1 (de) | 2007-02-08 |
| EP1595280A2 (en) | 2005-11-16 |
| WO2004075249A3 (en) | 2004-10-28 |
| GB2413898B (en) | 2006-08-16 |
| CN100382244C (zh) | 2008-04-16 |
| GB2413898A (en) | 2005-11-09 |
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