JP4492819B2 - キャパシタの製造方法 - Google Patents
キャパシタの製造方法 Download PDFInfo
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- JP4492819B2 JP4492819B2 JP2007006104A JP2007006104A JP4492819B2 JP 4492819 B2 JP4492819 B2 JP 4492819B2 JP 2007006104 A JP2007006104 A JP 2007006104A JP 2007006104 A JP2007006104 A JP 2007006104A JP 4492819 B2 JP4492819 B2 JP 4492819B2
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- silicon oxide
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- 239000003990 capacitor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 101
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 224
- 150000004767 nitrides Chemical class 0.000 description 36
- 239000012535 impurity Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229910001868 water Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 229910052809 inorganic oxide Inorganic materials 0.000 description 8
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 241000877463 Lanio Species 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 O 2 Chemical compound 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
Description
本発明にかかる、キャパシタの製造方法において、前記工程(E)は、プラズマソース側とバイアス側の両方にRFを印加する2周波励起プラズマCVD法で行われることができる。
本実施形態のキャパシタの製造方法について、図1ないし図7を参照しながら説明する。図1ないし図7は、キャパシタの製造工程を模式的に示す断面図である。下記(A)ないし(G)は本実施形態の構成であり、(H)は変形例として本実施形態に付加することができる構成である。
本実施形態によれば、酸素を含むプラズマによって、第1酸化シリコン層50の中に含まれる水素、炭素を含む化合物などの不純物や、第1酸化シリコン層50と誘電体層30との界面の酸素欠陥などが除去される。そのため、誘電体層30の無機酸化物の還元が抑制され、誘電体層30の側面を流れる漏れ電流を極めて小さくできる。さらに、第1酸化シリコン層50および第2酸化シリコン層60の積層体のヤング率は、酸化アルミニウム等に比較して小さいため、誘電体層30の伸縮が阻害されない圧電デバイスに好適なキャパシタ100および200が得られる。また、酸素を含むプラズマによる処理を行う工程は、前後の工程と同一のチャンバ内で短時間で行うことができるため、所望のスループットを確保しつつ、良質なキャパシタ100ないし300を得ることができる。
Claims (3)
- (A)下部電極を形成する工程と、
(B)前記下部電極の上方に強誘電体または圧電体からなる誘電体層を形成する工程と、
(C)前記誘電体層の上方に上部電極を形成する工程と、
(D)前記誘電体層および前記上部電極をパターニングする工程と、
(E)前記誘電体層の少なくとも側面を被覆するように第1酸化シリコン層を形成する工程と、
(F)前記第1酸化シリコン層を、酸素および二酸化炭素の少なくとも一種のガスのプラズマによって処理する工程と、
(G)少なくとも前記第1酸化シリコン層の上方に第2酸化シリコン層を形成する工程と、
を含み、
前記工程(E)で、前記第1酸化シリコン層は、10〜40nmの厚みに形成される、キャパシタの製造方法。 - 請求項1において、
前記工程(F)の後であって、前記工程(G)の前に、
(H)前記第1酸化シリコン層の上方に窒化シリコン層を形成する工程、を含むキャパシタの製造方法。 - 請求項1または請求項2において、
前記工程(E)は、プラズマソース側とバイアス側の両方にRFを印加する2周波励起プラズマCVD法で行われる、キャパシタの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007006104A JP4492819B2 (ja) | 2007-01-15 | 2007-01-15 | キャパシタの製造方法 |
US12/013,507 US20080170352A1 (en) | 2007-01-15 | 2008-01-14 | Capacitor and its manufacturing method |
US13/013,148 US8305730B2 (en) | 2007-01-15 | 2011-01-25 | Capacitor and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007006104A JP4492819B2 (ja) | 2007-01-15 | 2007-01-15 | キャパシタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008172158A JP2008172158A (ja) | 2008-07-24 |
JP4492819B2 true JP4492819B2 (ja) | 2010-06-30 |
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JP2007006104A Active JP4492819B2 (ja) | 2007-01-15 | 2007-01-15 | キャパシタの製造方法 |
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JP (1) | JP4492819B2 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03153084A (ja) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | 半導体装置 |
JPH05183106A (ja) * | 1991-05-08 | 1993-07-23 | Philips Gloeilampenfab:Nv | 半導体装置及びその製造方法 |
JPH1083990A (ja) * | 1996-09-06 | 1998-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH11233513A (ja) * | 1998-02-18 | 1999-08-27 | Fujitsu Ltd | 強誘電体膜を用いた装置の製造方法及び装置 |
JP2002026286A (ja) * | 2000-07-10 | 2002-01-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2007
- 2007-01-15 JP JP2007006104A patent/JP4492819B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03153084A (ja) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | 半導体装置 |
JPH05183106A (ja) * | 1991-05-08 | 1993-07-23 | Philips Gloeilampenfab:Nv | 半導体装置及びその製造方法 |
JPH1083990A (ja) * | 1996-09-06 | 1998-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH11233513A (ja) * | 1998-02-18 | 1999-08-27 | Fujitsu Ltd | 強誘電体膜を用いた装置の製造方法及び装置 |
JP2002026286A (ja) * | 2000-07-10 | 2002-01-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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