JP4485490B2 - Mosゲートトランジスタ用ドライバおよび高電圧mosfet - Google Patents
Mosゲートトランジスタ用ドライバおよび高電圧mosfet Download PDFInfo
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- JP4485490B2 JP4485490B2 JP2006162698A JP2006162698A JP4485490B2 JP 4485490 B2 JP4485490 B2 JP 4485490B2 JP 2006162698 A JP2006162698 A JP 2006162698A JP 2006162698 A JP2006162698 A JP 2006162698A JP 4485490 B2 JP4485490 B2 JP 4485490B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
- H01L29/782—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Amplifiers (AREA)
Description
21 低電圧部
22 ハイサイドフローティングウェル
23 VCC(15ボルト)ピン
24 入力信号ピン
25 COMM(グラウンド)ピン
30 VBピン
31 HO出力ピン
32 VSピン
35 ブートストラップダイオード
36 ブートストラップコンデンサ
37 バイパスコンデンサ
40 MOSFET
41 高電圧電源
42 負荷
60 リフレッシュMOSFET
61 寄生ダイオード
62 ショットキーダイオード
100 N-エピタキシャル層
101,102 P+シンカー
105,106,107,108 P-リサーフ拡散領域
109 フィールド酸化膜
110,111 深いP+領域
112,113 N+ソース領域
114 ポリシリコンゲート
115 層間酸化物
116 ソース接点
120,121 ドレイン接点
Claims (11)
- 信号入力ピン、グラウンドピン、信号出力ピン、MOSゲートトランジスタと負荷との間のノードに接続可能なV S ピン、及び前記信号入力ピンへの入力信号を前記信号出力ピンに対して変換するレベルシフト回路、並びに、大電圧降下ボディドレインダイオードを有する前記グラウンドピンと前記V S ピンとの間に接続された高電圧MOSFETを備え、前記高電圧MOSFETは、
横方向に離して配置されたソース拡散及びドレイン拡散を有するシリコンボディと、
反転可能な横方向のチャンネル領域であって、該横方向のチャンネル領域の表面濃度が反転するとき前記ソース拡散と前記ドレイン拡散との間の伝導を可能にするように作動可能な横方向のチャンネル領域と、
前記横方向のチャンネルに接続されたMOSゲート構造であって、該MOSゲート構造へのゲート信号に応答して前記チャンネル領域を反転させるように作動可能なMOSゲート構造と、
前記ソース拡散及び前記ドレイン拡散にそれぞれ接続された金属ソース接点及び金属ドレイン接点とを含み、
前記ソース拡散及び前記ドレイン拡散の少なくともいずれか一方が、前記金属ソース接点と前記金属ドレイン接点との間でショットキーダイオードを規定するのに十分に低い濃度を有し、前記ショットキーダイオードは、V S が前記グラウンドピンに対して負になったとき、前記大電圧降下ボディドレインダイオードの順方向伝導を阻止することを特徴とするMOSゲートトランジスタ用ドライバ。 - 前記大電圧降下ボディドレインダイオードは前記ショットキーダイオードと逆極性であることを特徴とする請求項1に記載のMOSゲートトランジスタ用ドライバ。
- 低電圧部、V S ピンに接続されたハイサイドフローティングウェル、V CC ピンとV B との間に接続されたブートストラップダイオード、V B ピンとV S ピンとの間に接続されたブートストラップコンデンサ、V CC ピンとV COMM ピンとの間に接続されたバイパスコンデンサ、及び高電圧電源ピンと負荷との間に接続された電源スイッチを含み、前記負荷は前記電源スイッチのパルス周波数変調により制御可能であり、前記電源スイッチは前記ハイサイドフローティングウェル及び入力信号によって制御される回路であって、
前記ブートストラップコンデンサの継続したリフレッシュ動作を確実に行うために前記V S ピンと前記V COMM ピンとの間に接続された垂直伝導リフレッシュMOSFETであって、該垂直伝導リフレッシュMOSFETは、並列に接続された寄生ダイオード及び該寄生ダイオードの順方向伝導を阻止する前記垂直伝導リフレッシュMOSFETと直列に接続されたショットキーダイオードをさらに含み、
前記垂直伝導リフレッシュMOSFET及び前記ショットキーダイオードは、共通の半導体ボディに形成されていることを特徴とするハイサイドドライバチップを含む回路。 - 前記寄生ダイオードは、V S ピンにおける電圧V S が略(−)0.5ボルト下げられるとき、ターンオンし、少数キャリアが前記回路に注入されることを可能にすることを特徴とする請求項3に記載の回路。
- 前記垂直伝導リフレッシュMOSFET及び前記ショットキーダイオードが前記回路に統合される場合、電圧V S が電圧V COMM を下回るとき少数キャリアは前記回路に注入されないことを特徴とする請求項3に記載の回路。
- 前記電源スイッチがターンオフすると、前記V S ピンは垂直伝導リフレッシュMOSFETをターンオンすることにより前記V COMM ピンに接続されることを特徴とする請求項3に記載の回路。
- 前記垂直伝導リフレッシュMOSFETは電圧V S を電圧V COMM に近づけるように変化させることを特徴とする請求項3に記載の回路。
- 前記V CC ピンにおける電圧V CC は15ボルト、前記V B ピンにおける電圧V B はフローティング電源の(+)V e 、及び前記V S ピンにおける電圧V S はフローティング電源の(−)V e 、V e の値は電圧V COMM に対して0から200ボルトの間を振れ、かつ前記電圧V B は前記電圧V S に15ボルト加えたものに等しいことを特徴とする請求項3に記載の回路。
- 前記ブートストラップコンデンサの電荷は、前記電圧V B が前記電圧V CC を下回るとき前記V CC ピンから前記ブートストラップダイオードを介して充電されることを特徴とする請求項8に記載の回路。
- 前記ブートストラップダイオードは、前記電圧V B が前記電圧V CC を上回るとき前記ブートストラップコンデンサの放電を阻止することを特徴とする請求項8に記載の回路。
- 前記ブートストラップコンデンサの電荷は、前記負荷が抵抗性及び誘導性のいずれかである場合前記電源スイッチをターンオフすることにより充電されることを特徴とする請求項8に記載の回路。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/045,451 US6529034B1 (en) | 2001-11-07 | 2001-11-07 | Integrated series schottky and FET to allow negative drain voltage |
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JP2002320420A Division JP3857216B2 (ja) | 2001-11-07 | 2002-11-01 | Mosゲートトランジスタ用ドライバおよび高電圧mosfet |
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JP2006311594A JP2006311594A (ja) | 2006-11-09 |
JP4485490B2 true JP4485490B2 (ja) | 2010-06-23 |
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JP2002320420A Expired - Fee Related JP3857216B2 (ja) | 2001-11-07 | 2002-11-01 | Mosゲートトランジスタ用ドライバおよび高電圧mosfet |
JP2006162698A Expired - Lifetime JP4485490B2 (ja) | 2001-11-07 | 2006-06-12 | Mosゲートトランジスタ用ドライバおよび高電圧mosfet |
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JP2002320420A Expired - Fee Related JP3857216B2 (ja) | 2001-11-07 | 2002-11-01 | Mosゲートトランジスタ用ドライバおよび高電圧mosfet |
Country Status (5)
Country | Link |
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US (2) | US6529034B1 (ja) |
EP (1) | EP1311067B1 (ja) |
JP (2) | JP3857216B2 (ja) |
AT (1) | ATE322764T1 (ja) |
DE (1) | DE60210393T2 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10063084B4 (de) * | 2000-12-18 | 2009-12-03 | Siemens Ag | Leistungselektronische Schaltung |
EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
US6529034B1 (en) * | 2001-11-07 | 2003-03-04 | International Rectifier Corporation | Integrated series schottky and FET to allow negative drain voltage |
US6835619B2 (en) * | 2002-08-08 | 2004-12-28 | Micron Technology, Inc. | Method of forming a memory transistor comprising a Schottky contact |
US6987305B2 (en) * | 2003-08-04 | 2006-01-17 | International Rectifier Corporation | Integrated FET and schottky device |
US7485984B2 (en) * | 2006-05-12 | 2009-02-03 | Delphi Technologies, Inc. | Control module |
US7829928B2 (en) * | 2006-06-26 | 2010-11-09 | System General Corp. | Semiconductor structure of a high side driver and method for manufacturing the same |
US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
US7564099B2 (en) * | 2007-03-12 | 2009-07-21 | International Rectifier Corporation | Monolithic MOSFET and Schottky diode device |
JP5047653B2 (ja) | 2007-03-13 | 2012-10-10 | 三菱電機株式会社 | 半導体装置 |
US7807555B2 (en) * | 2007-07-31 | 2010-10-05 | Intersil Americas, Inc. | Method of forming the NDMOS device body with the reduced number of masks |
US8027215B2 (en) * | 2008-12-19 | 2011-09-27 | Unity Semiconductor Corporation | Array operation using a schottky diode as a non-ohmic isolation device |
JP5522824B2 (ja) * | 2009-03-17 | 2014-06-18 | Fdk株式会社 | スイッチング素子の損失低減回路 |
DK2328264T3 (da) * | 2009-09-29 | 2012-07-23 | Abb Schweiz Ag | Direkte omformer og system med en sådan direkte omformer |
US8610233B2 (en) | 2011-03-16 | 2013-12-17 | International Business Machines Corporation | Hybrid MOSFET structure having drain side schottky junction |
JP2013062717A (ja) | 2011-09-14 | 2013-04-04 | Mitsubishi Electric Corp | 半導体装置 |
US20130334648A1 (en) * | 2012-06-15 | 2013-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for High Voltage Diodes |
US10522670B2 (en) | 2012-06-26 | 2019-12-31 | Nxp Usa, Inc. | Semiconductor device with selectively etched surface passivation |
US9111868B2 (en) | 2012-06-26 | 2015-08-18 | Freescale Semiconductor, Inc. | Semiconductor device with selectively etched surface passivation |
US8946776B2 (en) | 2012-06-26 | 2015-02-03 | Freescale Semiconductor, Inc. | Semiconductor device with selectively etched surface passivation |
US10825924B2 (en) | 2012-06-26 | 2020-11-03 | Nxp Usa, Inc. | Semiconductor device with selectively etched surface passivation |
US8946779B2 (en) | 2013-02-26 | 2015-02-03 | Freescale Semiconductor, Inc. | MISHFET and Schottky device integration |
KR101657878B1 (ko) * | 2015-03-09 | 2016-09-19 | 성균관대학교산학협력단 | 플로팅 스위치 게이트 드라이버의 전원 회로 및 이를 포함하는 플로팅 스위치 게이트 구동 회로 |
CN105827223B (zh) * | 2016-02-23 | 2018-10-12 | 东南大学 | 一种集成自举的高压驱动芯片及其工艺结构 |
US11652411B2 (en) * | 2021-02-26 | 2023-05-16 | Nxp Usa, Inc. | System and method of maintaining charge on boot capacitor of a power converter |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04343476A (ja) * | 1991-03-20 | 1992-11-30 | Harris Corp | 金属酸化物半導体電界効果型トランジスタ回路 |
JPH08148675A (ja) * | 1994-11-15 | 1996-06-07 | Fuji Electric Co Ltd | 半導体装置 |
JPH08186261A (ja) * | 1994-10-31 | 1996-07-16 | Nec Corp | 半導体装置 |
JPH09298871A (ja) * | 1996-01-18 | 1997-11-18 | Internatl Rectifier Corp | バックレギュレータ回路 |
JPH1127950A (ja) * | 1997-07-04 | 1999-01-29 | Shibaura Eng Works Co Ltd | パルス幅変調方式負荷駆動回路 |
JPH11501500A (ja) * | 1995-12-27 | 1999-02-02 | フィリップス、エレクトロニクス、ネムローゼ、フェンノートシャップ | ハーフブリッジ回路のための集積化されたドライバ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US4811065A (en) * | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
FR2627033B1 (fr) * | 1988-02-04 | 1990-07-20 | Sgs Thomson Microelectronics | Circuit de commande de grille d'un transistor mos de puissance fonctionnant en commutation |
US5184272A (en) * | 1989-03-31 | 1993-02-02 | Hitachi, Ltd. | High-side switch with overcurrent protecting circuit |
US5545955A (en) * | 1994-03-04 | 1996-08-13 | International Rectifier Corporation | MOS gate driver for ballast circuits |
US6529034B1 (en) * | 2001-11-07 | 2003-03-04 | International Rectifier Corporation | Integrated series schottky and FET to allow negative drain voltage |
-
2001
- 2001-11-07 US US10/045,451 patent/US6529034B1/en not_active Expired - Lifetime
-
2002
- 2002-11-01 JP JP2002320420A patent/JP3857216B2/ja not_active Expired - Fee Related
- 2002-11-05 EP EP02079643A patent/EP1311067B1/en not_active Expired - Lifetime
- 2002-11-05 DE DE60210393T patent/DE60210393T2/de not_active Expired - Fee Related
- 2002-11-05 AT AT02079643T patent/ATE322764T1/de not_active IP Right Cessation
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2003
- 2003-01-06 US US10/338,077 patent/US6707101B2/en not_active Expired - Lifetime
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2006
- 2006-06-12 JP JP2006162698A patent/JP4485490B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04343476A (ja) * | 1991-03-20 | 1992-11-30 | Harris Corp | 金属酸化物半導体電界効果型トランジスタ回路 |
JPH08186261A (ja) * | 1994-10-31 | 1996-07-16 | Nec Corp | 半導体装置 |
JPH08148675A (ja) * | 1994-11-15 | 1996-06-07 | Fuji Electric Co Ltd | 半導体装置 |
JPH11501500A (ja) * | 1995-12-27 | 1999-02-02 | フィリップス、エレクトロニクス、ネムローゼ、フェンノートシャップ | ハーフブリッジ回路のための集積化されたドライバ |
JPH09298871A (ja) * | 1996-01-18 | 1997-11-18 | Internatl Rectifier Corp | バックレギュレータ回路 |
JPH1127950A (ja) * | 1997-07-04 | 1999-01-29 | Shibaura Eng Works Co Ltd | パルス幅変調方式負荷駆動回路 |
Also Published As
Publication number | Publication date |
---|---|
EP1311067A1 (en) | 2003-05-14 |
DE60210393T2 (de) | 2007-01-11 |
JP3857216B2 (ja) | 2006-12-13 |
JP2006311594A (ja) | 2006-11-09 |
US6707101B2 (en) | 2004-03-16 |
US20030102886A1 (en) | 2003-06-05 |
EP1311067B1 (en) | 2006-04-05 |
US6529034B1 (en) | 2003-03-04 |
JP2003198347A (ja) | 2003-07-11 |
ATE322764T1 (de) | 2006-04-15 |
DE60210393D1 (de) | 2006-05-18 |
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