JP2006311594A - Mosゲートトランジスタ用ドライバおよび高電圧mosfet - Google Patents
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
- H01L29/782—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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Abstract
【解決手段】ブートストラップコンデンサ36をリフレッシュするために、VSピン32をグラウンドに接続するために用いられるリフレッシュMOSFET60と直列にショットキーダイオード62を配置し、リフレッシュMOSFET60とショットキーダイオード62をチップ内に集積化し、ショットキーダイオード62をリフレッシュMOSFET60 のドレインと直列に配置する。このようなショットキーダイオード62は、逆方向では、阻止電圧が(-)0.5ボルトから約(-)8ボルトまで増加する。したがって、従来であれば本体ドレインダイオードが導通し始め少数キャリアをハイサイドウェル内に注入する状況下でも、デバイス本体ダイオードは導通しない。
【選択図】図1
Description
21 低電圧部
22 ハイサイドフローティングウェル
23 VCC(15ボルト)ピン
24 入力信号ピン
25 COMM(グラウンド)ピン
30 VBピン
31 HO出力ピン
32 VSピン
35 ブートストラップダイオード
36 ブートストラップコンデンサ
37 バイパスコンデンサ
40 MOSFET
41 高電圧電源
42 負荷
60 リフレッシュMOSFET
61 寄生ダイオード
62 ショットキーダイオード
100 N-エピタキシャル層
101,102 P+シンカー
105,106,107,108 P-リサーフ拡散領域
109 フィールド酸化膜
110,111 深いP+領域
112,113 N+ソース領域
114 ポリシリコンゲート
115 層間酸化物
116 ソース接点
120,121 ドレイン接点
Claims (11)
- 信号入力ピン、グラウンドピン、信号出力ピン、前記MOSゲートトランジスタと負荷との間のノードに接続可能なVSピン、及び前記信号入力ピンへの入力信号を前記信号出力ピンに対して変換するレベルシフト回路、並びに
大電圧降下本体ドレインダイオードを有する高電圧MOSFETを備え、前記高電圧MOSFETは、
横方向に離して配置されたソース拡散及びドレイン拡散を有するシリコン本体と、
反転可能な横方向のチャンネル領域であって、該横方向のチャンネル領域の表面濃度が反転するとき前記ソース拡散と前記ドレイン拡散との間の伝導を可能にするように作動可能な横方向のチャンネル領域と、
前記横方向のチャンネルに接続されたMOSゲート構造であって、該MOSゲート構造へのゲート信号に応答して前記チャンネル領域を反転させるように作動可能なMOSゲート構造と、
前記ソース拡散及び前記ドレイン拡散にそれぞれ接続された金属ソース接点及び金属ドレイン接点とを含み、
前記ソース拡散及び前記ドレイン拡散の少なくともいずれか一方が、前記金属ソース接点と前記金属ドレイン接点との間でショットキーダイオードを規定するのに十分に低い濃度を有することを特徴とするMOSゲートトランジスタ用ドライバ。 - 前記高電圧MOSFETは固有寄生ダイオードを有し、前記ショットキーダイオードは前記固有寄生ダイオードと逆極性であることを特徴とする請求項1に記載のMOSゲートトランジスタ用ドライバ。
- 低電圧領域を有するハイサイドドライバチップ、VSピンに接続されたハイサイドフローティングウェル、VCCピンとVBとの間に接続されたブートストラップダイオード、VBピンとVSピンとの間に接続されたブートストラップコンデンサ、VCCピンとVCOMMピンとの間に接続されたバイパスコンデンサ、及び高電圧電源ピンに接続された電源スイッチであって、前記ドライバチップ及び入力信号によって制御される前記電源スイッチのパルス周波数変調により制御可能な負荷に接続された電源スイッチを含む回路であって、
前記ブートストラップコンデンサの継続したリフレッシュ動作を確実に行うために前記VSピンと前記VCOMMピンとの間に接続された垂直伝導のリフレッシュMOSFETであって、該MOSFETは、並列に接続された寄生ダイオード及び該寄生ダイオードの順方向伝導を阻止する前記垂直伝導リフレッシュMOSFETを含み、
前記垂直伝導リフレッシュMOSFET及び前記ショットキーダイオードは、共通の半導体本体に形成されていることを特徴とする回路。 - 前記寄生ダイオードは、VSピンにおける電圧VSが略(−)0.5ボルト下げられるとき、ターンオンし、少数キャリアが前記回路に注入されることを可能にすることを特徴とする請求項3に記載の回路。
- 前記垂直伝導リフレッシュMOSFET及び前記ショットキーダイオードが前記回路に統合される場合、電圧VSが電圧VCOMMを下回るとき少数キャリアは前記回路に注入されないことを特徴とする請求項3に記載の回路。
- 前記電源スイッチがターンオフすると、前記VSピンは垂直伝導リフレッシュMOSFETをターンオンすることにより前記VCOMMピンに接続されることを特徴とする請求項3に記載の回路。
- 前記垂直伝導リフレッシュMOSFETは電圧VSを電圧VCOMMに近づけるように変化させることを特徴とする請求項3に記載の回路。
- 前記VCCピンにおける電圧VCCは15ボルト、前記VBピンにおける電圧VBはフローティング電源の(+)Ve、及び前記VSピンにおける電圧VSはフローティング電源の(−)Ve、Veの値は電圧VCOMMに対して0から200ボルトの間を振れ、かつ前記電圧VBは前記電圧VSに15ボルト加えたものに等しいことを特徴とする請求項3に記載の回路。
- 前記ブートストラップコンデンサの電荷は、前記電圧VBが前記電圧VCCを下回るとき前記VCCピンから前記ブートストラップダイオードを介して充電されることを特徴とする請求項8に記載の回路。
- 前記ブートストラップダイオードは、前記電圧VBが前記電圧VCCを上回るとき前記ブートストラップコンデンサの放電を阻止することを特徴とする請求項8に記載の回路。
- 前記ブートストラップコンデンサの電荷は、前記負荷が抵抗性及び誘導性のいずれかである場合前記電源スイッチをターンオフすることにより充電されることを特徴とする請求項8に記載の回路。
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US10/045,451 US6529034B1 (en) | 2001-11-07 | 2001-11-07 | Integrated series schottky and FET to allow negative drain voltage |
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JP2002320420A Division JP3857216B2 (ja) | 2001-11-07 | 2002-11-01 | Mosゲートトランジスタ用ドライバおよび高電圧mosfet |
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JP2006162698A Expired - Lifetime JP4485490B2 (ja) | 2001-11-07 | 2006-06-12 | Mosゲートトランジスタ用ドライバおよび高電圧mosfet |
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EP (1) | EP1311067B1 (ja) |
JP (2) | JP3857216B2 (ja) |
AT (1) | ATE322764T1 (ja) |
DE (1) | DE60210393T2 (ja) |
Cited By (2)
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KR101657878B1 (ko) * | 2015-03-09 | 2016-09-19 | 성균관대학교산학협력단 | 플로팅 스위치 게이트 드라이버의 전원 회로 및 이를 포함하는 플로팅 스위치 게이트 구동 회로 |
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JPH08186261A (ja) * | 1994-10-31 | 1996-07-16 | Nec Corp | 半導体装置 |
JPH09298871A (ja) * | 1996-01-18 | 1997-11-18 | Internatl Rectifier Corp | バックレギュレータ回路 |
JPH1127950A (ja) * | 1997-07-04 | 1999-01-29 | Shibaura Eng Works Co Ltd | パルス幅変調方式負荷駆動回路 |
JPH11501500A (ja) * | 1995-12-27 | 1999-02-02 | フィリップス、エレクトロニクス、ネムローゼ、フェンノートシャップ | ハーフブリッジ回路のための集積化されたドライバ |
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US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US4811065A (en) * | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
FR2627033B1 (fr) * | 1988-02-04 | 1990-07-20 | Sgs Thomson Microelectronics | Circuit de commande de grille d'un transistor mos de puissance fonctionnant en commutation |
US5184272A (en) * | 1989-03-31 | 1993-02-02 | Hitachi, Ltd. | High-side switch with overcurrent protecting circuit |
US5545955A (en) * | 1994-03-04 | 1996-08-13 | International Rectifier Corporation | MOS gate driver for ballast circuits |
US6529034B1 (en) * | 2001-11-07 | 2003-03-04 | International Rectifier Corporation | Integrated series schottky and FET to allow negative drain voltage |
-
2001
- 2001-11-07 US US10/045,451 patent/US6529034B1/en not_active Expired - Lifetime
-
2002
- 2002-11-01 JP JP2002320420A patent/JP3857216B2/ja not_active Expired - Fee Related
- 2002-11-05 DE DE60210393T patent/DE60210393T2/de not_active Expired - Fee Related
- 2002-11-05 EP EP02079643A patent/EP1311067B1/en not_active Expired - Lifetime
- 2002-11-05 AT AT02079643T patent/ATE322764T1/de not_active IP Right Cessation
-
2003
- 2003-01-06 US US10/338,077 patent/US6707101B2/en not_active Expired - Lifetime
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2006
- 2006-06-12 JP JP2006162698A patent/JP4485490B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04343476A (ja) * | 1991-03-20 | 1992-11-30 | Harris Corp | 金属酸化物半導体電界効果型トランジスタ回路 |
JPH08186261A (ja) * | 1994-10-31 | 1996-07-16 | Nec Corp | 半導体装置 |
JPH08148675A (ja) * | 1994-11-15 | 1996-06-07 | Fuji Electric Co Ltd | 半導体装置 |
JPH11501500A (ja) * | 1995-12-27 | 1999-02-02 | フィリップス、エレクトロニクス、ネムローゼ、フェンノートシャップ | ハーフブリッジ回路のための集積化されたドライバ |
JPH09298871A (ja) * | 1996-01-18 | 1997-11-18 | Internatl Rectifier Corp | バックレギュレータ回路 |
JPH1127950A (ja) * | 1997-07-04 | 1999-01-29 | Shibaura Eng Works Co Ltd | パルス幅変調方式負荷駆動回路 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010220385A (ja) * | 2009-03-17 | 2010-09-30 | Fdk Corp | スイッチング素子の損失低減回路 |
KR101657878B1 (ko) * | 2015-03-09 | 2016-09-19 | 성균관대학교산학협력단 | 플로팅 스위치 게이트 드라이버의 전원 회로 및 이를 포함하는 플로팅 스위치 게이트 구동 회로 |
US9787295B2 (en) | 2015-03-09 | 2017-10-10 | Research & Business Foundation Sungkyunkwan University | Power supply circuit for gate driver and gate driver circuit of floating switch having the same |
Also Published As
Publication number | Publication date |
---|---|
JP3857216B2 (ja) | 2006-12-13 |
US6707101B2 (en) | 2004-03-16 |
EP1311067B1 (en) | 2006-04-05 |
EP1311067A1 (en) | 2003-05-14 |
JP2003198347A (ja) | 2003-07-11 |
JP4485490B2 (ja) | 2010-06-23 |
US6529034B1 (en) | 2003-03-04 |
ATE322764T1 (de) | 2006-04-15 |
DE60210393D1 (de) | 2006-05-18 |
US20030102886A1 (en) | 2003-06-05 |
DE60210393T2 (de) | 2007-01-11 |
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