JP4480410B2 - 有機半導体材料および有機薄膜トランジスタ並びにその製造方法 - Google Patents

有機半導体材料および有機薄膜トランジスタ並びにその製造方法 Download PDF

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JP4480410B2
JP4480410B2 JP2004024878A JP2004024878A JP4480410B2 JP 4480410 B2 JP4480410 B2 JP 4480410B2 JP 2004024878 A JP2004024878 A JP 2004024878A JP 2004024878 A JP2004024878 A JP 2004024878A JP 4480410 B2 JP4480410 B2 JP 4480410B2
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JP2005154709A (ja
JP2005154709A5 (enrdf_load_stackoverflow
Inventor
善一 秋山
俊也 匂坂
匠 山賀
崇 岡田
正臣 佐々木
昌史 鳥居
義宣 中山
慎一 河村
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP2004024878A priority Critical patent/JP4480410B2/ja
Priority to US10/777,095 priority patent/US7166689B2/en
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Priority to US11/566,728 priority patent/US7550554B2/en
Publication of JP2005154709A5 publication Critical patent/JP2005154709A5/ja
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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2004024878A 2003-02-13 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法 Expired - Lifetime JP4480410B2 (ja)

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Application Number Priority Date Filing Date Title
JP2004024878A JP4480410B2 (ja) 2003-10-31 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法
US10/777,095 US7166689B2 (en) 2003-02-13 2004-02-13 Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor
US11/566,728 US7550554B2 (en) 2003-02-13 2006-12-05 Aryl amine polymer, thin film transistor using the new aryl amine polymer, and method of manufacturing the thin film transistor

Applications Claiming Priority (2)

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JP2003373723 2003-10-31
JP2004024878A JP4480410B2 (ja) 2003-10-31 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法

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JP2005154709A JP2005154709A (ja) 2005-06-16
JP2005154709A5 JP2005154709A5 (enrdf_load_stackoverflow) 2007-03-08
JP4480410B2 true JP4480410B2 (ja) 2010-06-16

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228935A (ja) * 2005-02-17 2006-08-31 Ricoh Co Ltd 有機薄膜トランジスタ
EP1930940A1 (en) * 2005-08-31 2008-06-11 Riken Organic thin film transistor, and method for surface modification of gate insulating layer in organic thin film transistor
JP2007077223A (ja) * 2005-09-13 2007-03-29 Ricoh Co Ltd ポリ（トリアリールアミン）
JP2007123580A (ja) * 2005-10-28 2007-05-17 Konica Minolta Holdings Inc 有機半導体薄膜の形成方法及び有機薄膜トランジスタ
JP2007123620A (ja) * 2005-10-28 2007-05-17 Ricoh Co Ltd 有機半導体装置及びその製造方法、並びにアクティブマトリクス表示装置
WO2007129832A1 (en) * 2006-05-04 2007-11-15 Lg Chem, Ltd. Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same
JP5205763B2 (ja) 2006-09-19 2013-06-05 株式会社リコー 有機薄膜トランジスタ
JP5729540B2 (ja) * 2010-12-16 2015-06-03 株式会社リコー 電界効果型トランジスタ及びその製造方法

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