JP2005154709A5 - - Google Patents

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Publication number
JP2005154709A5
JP2005154709A5 JP2004024878A JP2004024878A JP2005154709A5 JP 2005154709 A5 JP2005154709 A5 JP 2005154709A5 JP 2004024878 A JP2004024878 A JP 2004024878A JP 2004024878 A JP2004024878 A JP 2004024878A JP 2005154709 A5 JP2005154709 A5 JP 2005154709A5
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Japan
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represented
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JP2004024878A
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English (en)
Japanese (ja)
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JP4480410B2 (ja
JP2005154709A (ja
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Priority to JP2004024878A priority Critical patent/JP4480410B2/ja
Priority claimed from JP2004024878A external-priority patent/JP4480410B2/ja
Priority to US10/777,095 priority patent/US7166689B2/en
Publication of JP2005154709A publication Critical patent/JP2005154709A/ja
Priority to US11/566,728 priority patent/US7550554B2/en
Publication of JP2005154709A5 publication Critical patent/JP2005154709A5/ja
Application granted granted Critical
Publication of JP4480410B2 publication Critical patent/JP4480410B2/ja
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Expired - Lifetime legal-status Critical Current

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JP2004024878A 2003-02-13 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法 Expired - Lifetime JP4480410B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004024878A JP4480410B2 (ja) 2003-10-31 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法
US10/777,095 US7166689B2 (en) 2003-02-13 2004-02-13 Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor
US11/566,728 US7550554B2 (en) 2003-02-13 2006-12-05 Aryl amine polymer, thin film transistor using the new aryl amine polymer, and method of manufacturing the thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003373723 2003-10-31
JP2004024878A JP4480410B2 (ja) 2003-10-31 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法

Publications (3)

Publication Number Publication Date
JP2005154709A JP2005154709A (ja) 2005-06-16
JP2005154709A5 true JP2005154709A5 (enrdf_load_stackoverflow) 2007-03-08
JP4480410B2 JP4480410B2 (ja) 2010-06-16

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ID=34741328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004024878A Expired - Lifetime JP4480410B2 (ja) 2003-02-13 2004-01-30 有機半導体材料および有機薄膜トランジスタ並びにその製造方法

Country Status (1)

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JP (1) JP4480410B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228935A (ja) * 2005-02-17 2006-08-31 Ricoh Co Ltd 有機薄膜トランジスタ
EP1930940A1 (en) * 2005-08-31 2008-06-11 Riken Organic thin film transistor, and method for surface modification of gate insulating layer in organic thin film transistor
JP2007077223A (ja) * 2005-09-13 2007-03-29 Ricoh Co Ltd ポリ（トリアリールアミン）
JP2007123580A (ja) * 2005-10-28 2007-05-17 Konica Minolta Holdings Inc 有機半導体薄膜の形成方法及び有機薄膜トランジスタ
JP2007123620A (ja) * 2005-10-28 2007-05-17 Ricoh Co Ltd 有機半導体装置及びその製造方法、並びにアクティブマトリクス表示装置
WO2007129832A1 (en) * 2006-05-04 2007-11-15 Lg Chem, Ltd. Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same
JP5205763B2 (ja) 2006-09-19 2013-06-05 株式会社リコー 有機薄膜トランジスタ
JP5729540B2 (ja) * 2010-12-16 2015-06-03 株式会社リコー 電界効果型トランジスタ及びその製造方法

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