JP4474087B2 - 回り込み電流を阻止する共有デバイスを含むクロスポイントメモリアレイ - Google Patents

回り込み電流を阻止する共有デバイスを含むクロスポイントメモリアレイ Download PDF

Info

Publication number
JP4474087B2
JP4474087B2 JP2002019411A JP2002019411A JP4474087B2 JP 4474087 B2 JP4474087 B2 JP 4474087B2 JP 2002019411 A JP2002019411 A JP 2002019411A JP 2002019411 A JP2002019411 A JP 2002019411A JP 4474087 B2 JP4474087 B2 JP 4474087B2
Authority
JP
Japan
Prior art keywords
magnetic memory
storage device
information storage
diode
memory elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002019411A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002304880A5 (enExample
JP2002304880A (ja
Inventor
ルー・ティー・トラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2002304880A publication Critical patent/JP2002304880A/ja
Publication of JP2002304880A5 publication Critical patent/JP2002304880A5/ja
Application granted granted Critical
Publication of JP4474087B2 publication Critical patent/JP4474087B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2002019411A 2001-01-29 2002-01-29 回り込み電流を阻止する共有デバイスを含むクロスポイントメモリアレイ Expired - Fee Related JP4474087B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US771857 2001-01-29
US09/771,857 US6356477B1 (en) 2001-01-29 2001-01-29 Cross point memory array including shared devices for blocking sneak path currents

Publications (3)

Publication Number Publication Date
JP2002304880A JP2002304880A (ja) 2002-10-18
JP2002304880A5 JP2002304880A5 (enExample) 2005-03-03
JP4474087B2 true JP4474087B2 (ja) 2010-06-02

Family

ID=25093157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002019411A Expired - Fee Related JP4474087B2 (ja) 2001-01-29 2002-01-29 回り込み電流を阻止する共有デバイスを含むクロスポイントメモリアレイ

Country Status (8)

Country Link
US (1) US6356477B1 (enExample)
EP (1) EP1227495B1 (enExample)
JP (1) JP4474087B2 (enExample)
KR (1) KR100878306B1 (enExample)
CN (1) CN1213453C (enExample)
DE (1) DE60137403D1 (enExample)
HK (1) HK1048703B (enExample)
TW (1) TW520498B (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
US6456524B1 (en) * 2001-10-31 2002-09-24 Hewlett-Packard Company Hybrid resistive cross point memory cell arrays and methods of making the same
DE60205569T2 (de) * 2001-12-21 2006-05-18 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
EP1321944B1 (en) 2001-12-21 2008-07-30 Kabushiki Kaisha Toshiba Magnetic random access memory
US6570440B1 (en) * 2001-12-24 2003-05-27 Intel Corporation Direct-timed sneak current cancellation
US6597598B1 (en) 2002-04-30 2003-07-22 Hewlett-Packard Development Company, L.P. Resistive cross point memory arrays having a charge injection differential sense amplifier
US6574129B1 (en) * 2002-04-30 2003-06-03 Hewlett-Packard Development Company, L.P. Resistive cross point memory cell arrays having a cross-couple latch sense amplifier
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
WO2003098636A2 (en) 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
US6780653B2 (en) * 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6870758B2 (en) * 2002-10-30 2005-03-22 Hewlett-Packard Development Company, L.P. Magnetic memory device and methods for making same
JP3766380B2 (ja) * 2002-12-25 2006-04-12 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
JP2004213771A (ja) * 2002-12-27 2004-07-29 Toshiba Corp 磁気ランダムアクセスメモリ
US6879505B2 (en) * 2003-03-31 2005-04-12 Matrix Semiconductor, Inc. Word line arrangement having multi-layer word line segments for three-dimensional memory array
US6822903B2 (en) * 2003-03-31 2004-11-23 Matrix Semiconductor, Inc. Apparatus and method for disturb-free programming of passive element memory cells
US7233024B2 (en) 2003-03-31 2007-06-19 Sandisk 3D Llc Three-dimensional memory device incorporating segmented bit line memory array
US7245520B2 (en) * 2004-08-13 2007-07-17 Nantero, Inc. Random access memory including nanotube switching elements
JP3836823B2 (ja) * 2003-08-25 2006-10-25 株式会社東芝 半導体集積回路装置
US7084446B2 (en) * 2003-08-25 2006-08-01 Intel Corporation Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
US6937509B2 (en) * 2003-09-08 2005-08-30 Hewlett-Packard Development Company, L.P. Data storage device and method of forming the same
US7136300B2 (en) * 2003-10-06 2006-11-14 Hewlett-Packard Development Company, Lp. Magnetic memory device including groups of series-connected memory elements
US6985389B2 (en) * 2003-10-27 2006-01-10 Stmicroelectronics, Inc. Phase change based memory device and method for operating same
US6947333B2 (en) * 2003-10-30 2005-09-20 Hewlett-Packard Development Company, L.P. Memory device
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US20060171200A1 (en) * 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7203129B2 (en) * 2004-02-16 2007-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Segmented MRAM memory array
KR100593607B1 (ko) * 2004-05-13 2006-06-28 학교법인 동국대학교 강유전 반도체 물질을 포함하는 비휘발성 반도체 메모리소자 및 그 반도체 메모리 소자의 데이터 기입, 소거 및판독 방법
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
WO2006041430A1 (en) * 2004-09-17 2006-04-20 Hewlett-Packard Development Company, L.P. Data storage device and method of forming the same
DE602005020318D1 (de) * 2004-09-22 2010-05-12 Nantero Inc Direktzugriffsspeicher mit nanoröhrenschaltelementen
JP2006127583A (ja) * 2004-10-26 2006-05-18 Elpida Memory Inc 不揮発性半導体記憶装置及び相変化メモリ
US7272052B2 (en) * 2005-03-31 2007-09-18 Sandisk 3D Llc Decoding circuit for non-binary groups of memory line drivers
US7054219B1 (en) 2005-03-31 2006-05-30 Matrix Semiconductor, Inc. Transistor layout configuration for tight-pitched memory array lines
US7142471B2 (en) * 2005-03-31 2006-11-28 Sandisk 3D Llc Method and apparatus for incorporating block redundancy in a memory array
US7359279B2 (en) * 2005-03-31 2008-04-15 Sandisk 3D Llc Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
US7680170B2 (en) * 2006-06-15 2010-03-16 Oclaro Photonics, Inc. Coupling devices and methods for stacked laser emitter arrays
US20080079047A1 (en) * 2006-09-29 2008-04-03 Joerg Dietrich Schmid Memory device and method of reading/writing data from/into a memory device
US7447062B2 (en) * 2007-03-15 2008-11-04 International Business Machines Corproation Method and structure for increasing effective transistor width in memory arrays with dual bitlines
US8487450B2 (en) * 2007-05-01 2013-07-16 Micron Technology, Inc. Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems
US8987702B2 (en) 2007-05-01 2015-03-24 Micron Technology, Inc. Selectively conducting devices, diode constructions, constructions, and diode forming methods
JP5216254B2 (ja) * 2007-06-22 2013-06-19 株式会社船井電機新応用技術研究所 メモリ素子アレイ
US8289662B2 (en) * 2008-05-20 2012-10-16 International Business Machines Corporation Tunnel junction resistor for high resistance devices and systems using the same
US8120951B2 (en) 2008-05-22 2012-02-21 Micron Technology, Inc. Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
US8134194B2 (en) 2008-05-22 2012-03-13 Micron Technology, Inc. Memory cells, memory cell constructions, and memory cell programming methods
US8154005B2 (en) * 2008-06-13 2012-04-10 Sandisk 3D Llc Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
US8105867B2 (en) * 2008-11-18 2012-01-31 Sandisk 3D Llc Self-aligned three-dimensional non-volatile memory fabrication
US8120068B2 (en) 2008-12-24 2012-02-21 Sandisk 3D Llc Three-dimensional memory structures having shared pillar memory cells
US8270199B2 (en) 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
US8139391B2 (en) * 2009-04-03 2012-03-20 Sandisk 3D Llc Multi-bit resistance-switching memory cell
US8315079B2 (en) * 2010-10-07 2012-11-20 Crossbar, Inc. Circuit for concurrent read operation and method therefor
US8982647B2 (en) * 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
US10049730B2 (en) 2014-07-31 2018-08-14 Hewlett Packard Enterprise Development Lp Crossbar arrays with shared drivers
US10672833B2 (en) 2017-07-26 2020-06-02 Micron Technology, Inc. Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices
US10739186B2 (en) * 2017-11-20 2020-08-11 Samsung Electronics Co., Ltd. Bi-directional weight cell

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
BE879975A (fr) * 1978-12-04 1980-03-03 Colburn William A Dispositif electronique contenant une matiere composite et son procede de realisation
FR2595526A1 (fr) * 1986-03-07 1987-09-11 Centomo Jean Louis Dispositif antiviol de ligne telephonique
JPH04344383A (ja) * 1991-05-22 1992-11-30 Mitsubishi Electric Corp 磁性薄膜メモリおよびその読み出し方法
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
JP3450657B2 (ja) * 1997-07-16 2003-09-29 株式会社東芝 半導体記憶装置
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
US5936880A (en) * 1997-11-13 1999-08-10 Vlsi Technology, Inc. Bi-layer programmable resistor memory
US6130835A (en) * 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
JP2000187976A (ja) * 1998-12-17 2000-07-04 Canon Inc 磁性薄膜メモリおよびその記録再生方法
US6055179A (en) * 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
US6097625A (en) 1998-07-16 2000-08-01 International Business Machines Corporation Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6215707B1 (en) * 2000-04-10 2001-04-10 Motorola Inc. Charge conserving write method and system for an MRAM
US6456525B1 (en) * 2000-09-15 2002-09-24 Hewlett-Packard Company Short-tolerant resistive cross point array

Also Published As

Publication number Publication date
KR100878306B1 (ko) 2009-01-14
EP1227495B1 (en) 2009-01-14
EP1227495A2 (en) 2002-07-31
DE60137403D1 (de) 2009-03-05
US6356477B1 (en) 2002-03-12
KR20030010459A (ko) 2003-02-05
HK1048703B (zh) 2006-03-17
CN1213453C (zh) 2005-08-03
CN1368752A (zh) 2002-09-11
EP1227495A3 (en) 2003-02-19
HK1048703A1 (en) 2003-04-11
TW520498B (en) 2003-02-11
JP2002304880A (ja) 2002-10-18

Similar Documents

Publication Publication Date Title
JP4474087B2 (ja) 回り込み電流を阻止する共有デバイスを含むクロスポイントメモリアレイ
JP4700259B2 (ja) 共通の導線を共有する一対の磁気ビットを有するメモリ素子アレイ
US7203129B2 (en) Segmented MRAM memory array
US7212432B2 (en) Resistive memory cell random access memory device and method of fabrication
US7286378B2 (en) Serial transistor-cell array architecture
US20050007833A1 (en) Memory cell strings
JP2004005972A (ja) 直列ダイオードを備える磁気ランダムアクセスメモリ（ｍｒａｍ）のためのトリプルサンプルセンシング
KR20020021613A (ko) 데이터 저장 장치
US20020000597A1 (en) Nonvolatile semiconductor memory device and method for recording information
JP2005116162A (ja) 直列に接続されたメモリ素子のグループを含む磁気メモリデバイス
KR101098477B1 (ko) 데이터 저장 장치
CN100483543C (zh) 磁性随机处理存储器装置
KR101123925B1 (ko) 판독 동작 수행 방법 및 시스템
JP3857658B2 (ja) 磁気ランダムアクセスメモリ
US20030218905A1 (en) Equi-potential sensing magnetic random access memory (MRAM) with series diodes
US7149100B2 (en) Serial transistor-cell array architecture
US6597618B2 (en) Magnetic tunnel junction magnetic random access memory
JP2008091015A (ja) メモリセルの読み出し動作を実行する方法
US6826077B2 (en) Magnetic random access memory with reduced parasitic currents
JP4068337B2 (ja) 磁気ランダムアクセスメモリ
KR20250161331A (ko) 가변 저항 메모리 소자
KR20200061330A (ko) 증가된 온/오프 비를 갖는 자기 메모리 소자와 그 제조 및 동작방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040401

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040401

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060523

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20060823

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060828

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061122

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070220

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070706

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100202

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100308

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130312

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4474087

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140312

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees