HK1048703B - 包含阻塞寄生路径电流的共享设备的交叉点存储器阵列 - Google Patents

包含阻塞寄生路径电流的共享设备的交叉点存储器阵列 Download PDF

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Publication number
HK1048703B
HK1048703B HK03100871.1A HK03100871A HK1048703B HK 1048703 B HK1048703 B HK 1048703B HK 03100871 A HK03100871 A HK 03100871A HK 1048703 B HK1048703 B HK 1048703B
Authority
HK
Hong Kong
Prior art keywords
memory elements
shared
layer
blocking
diode
Prior art date
Application number
HK03100871.1A
Other languages
English (en)
Chinese (zh)
Other versions
HK1048703A1 (en
Inventor
T. Tran Lung
Original Assignee
三星电子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星电子株式会社 filed Critical 三星电子株式会社
Publication of HK1048703A1 publication Critical patent/HK1048703A1/xx
Publication of HK1048703B publication Critical patent/HK1048703B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
HK03100871.1A 2001-01-29 2003-02-06 包含阻塞寄生路径电流的共享设备的交叉点存储器阵列 HK1048703B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/771857 2001-01-29
US09/771,857 US6356477B1 (en) 2001-01-29 2001-01-29 Cross point memory array including shared devices for blocking sneak path currents

Publications (2)

Publication Number Publication Date
HK1048703A1 HK1048703A1 (en) 2003-04-11
HK1048703B true HK1048703B (zh) 2006-03-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
HK03100871.1A HK1048703B (zh) 2001-01-29 2003-02-06 包含阻塞寄生路径电流的共享设备的交叉点存储器阵列

Country Status (8)

Country Link
US (1) US6356477B1 (enExample)
EP (1) EP1227495B1 (enExample)
JP (1) JP4474087B2 (enExample)
KR (1) KR100878306B1 (enExample)
CN (1) CN1213453C (enExample)
DE (1) DE60137403D1 (enExample)
HK (1) HK1048703B (enExample)
TW (1) TW520498B (enExample)

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US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
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Also Published As

Publication number Publication date
KR100878306B1 (ko) 2009-01-14
EP1227495B1 (en) 2009-01-14
EP1227495A2 (en) 2002-07-31
DE60137403D1 (de) 2009-03-05
US6356477B1 (en) 2002-03-12
KR20030010459A (ko) 2003-02-05
CN1213453C (zh) 2005-08-03
CN1368752A (zh) 2002-09-11
EP1227495A3 (en) 2003-02-19
HK1048703A1 (en) 2003-04-11
TW520498B (en) 2003-02-11
JP2002304880A (ja) 2002-10-18
JP4474087B2 (ja) 2010-06-02

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Effective date: 20210923