JP4473222B2 - 発光型トランジスタ - Google Patents

発光型トランジスタ Download PDF

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Publication number
JP4473222B2
JP4473222B2 JP2005517997A JP2005517997A JP4473222B2 JP 4473222 B2 JP4473222 B2 JP 4473222B2 JP 2005517997 A JP2005517997 A JP 2005517997A JP 2005517997 A JP2005517997 A JP 2005517997A JP 4473222 B2 JP4473222 B2 JP 4473222B2
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JP
Japan
Prior art keywords
source
light
drain electrode
electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005517997A
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English (en)
Japanese (ja)
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JPWO2005079119A1 (ja
Inventor
博一 夛田
知 坂上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2005079119A1 publication Critical patent/JPWO2005079119A1/ja
Application granted granted Critical
Publication of JP4473222B2 publication Critical patent/JP4473222B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Lasers (AREA)
JP2005517997A 2004-02-16 2005-02-14 発光型トランジスタ Expired - Fee Related JP4473222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004038951 2004-02-16
JP2004038951 2004-02-16
PCT/JP2005/002162 WO2005079119A1 (ja) 2004-02-16 2005-02-14 発光型トランジスタ

Publications (2)

Publication Number Publication Date
JPWO2005079119A1 JPWO2005079119A1 (ja) 2007-10-25
JP4473222B2 true JP4473222B2 (ja) 2010-06-02

Family

ID=34857827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005517997A Expired - Fee Related JP4473222B2 (ja) 2004-02-16 2005-02-14 発光型トランジスタ

Country Status (7)

Country Link
US (1) US7531832B2 (enExample)
EP (1) EP1718123A4 (enExample)
JP (1) JP4473222B2 (enExample)
KR (1) KR100850754B1 (enExample)
CN (1) CN100569036C (enExample)
TW (1) TW200531273A (enExample)
WO (1) WO2005079119A1 (enExample)

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GB0400997D0 (en) * 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
JP2006253164A (ja) * 2005-03-07 2006-09-21 Ricoh Co Ltd 有機トランジスタ、及びディスプレイ装置
JP2006252774A (ja) * 2005-03-07 2006-09-21 Ricoh Co Ltd 有機トランジスタ、及びディスプレイ装置
DE102005048774B4 (de) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung
JP2007200829A (ja) * 2005-12-27 2007-08-09 Semiconductor Energy Lab Co Ltd 有機発光トランジスタ
US8212238B2 (en) * 2005-12-27 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007258253A (ja) * 2006-03-20 2007-10-04 Kyoto Univ トランジスタ材料及びこれを用いた発光トランジスタ素子
TWI323039B (en) * 2006-10-24 2010-04-01 Micro-casting lithography and method for fabrication of organic thin film transistor
JP5403518B2 (ja) * 2008-02-08 2014-01-29 国立大学法人京都工芸繊維大学 発光デバイスの駆動方法及び駆動装置
ITTO20080781A1 (it) * 2008-10-23 2010-04-24 St Microelectronics Srl Dispositivo emettitore di radiazione ottica a cavita' risonante e processo di fabbricazione del dispositivo
GB0821980D0 (en) * 2008-12-02 2009-01-07 Cambridge Entpr Ltd Optoelectronic device
WO2011099525A1 (ja) * 2010-02-12 2011-08-18 国立大学法人京都工芸繊維大学 発光トランジスタ
RU2507632C2 (ru) * 2012-02-09 2014-02-20 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Светотранзистор с высоким быстродействием
US9368756B2 (en) * 2012-10-12 2016-06-14 Samsung Electronics Co., Ltd. Organic electroluminescence device and method of manufacturing the same
CN104241330B (zh) 2014-09-05 2017-05-03 京东方科技集团股份有限公司 有机发光二极管显示装置及其制作方法
CN108281556A (zh) * 2017-01-05 2018-07-13 昆山工研院新型平板显示技术中心有限公司 Oled器件及其制造方法以及显示装置
CN107425035B (zh) * 2017-05-11 2019-11-05 京东方科技集团股份有限公司 有机发光晶体管和显示面板
CN109920922B (zh) * 2017-12-12 2020-07-17 京东方科技集团股份有限公司 有机发光器件及其制备方法、显示基板、显示驱动方法
CN109917505A (zh) * 2019-04-26 2019-06-21 电子科技大学中山学院 一种光栅光源
CN114023783A (zh) * 2021-10-29 2022-02-08 Tcl华星光电技术有限公司 一种显示面板及制作方法和移动终端
DE102022107520A1 (de) * 2022-03-30 2023-10-05 Ams-Osram International Gmbh Laser mit horizontaler stromeinprägung und verfahren zur herstellung eines lasers mit horizontaler stromeinprägung

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Also Published As

Publication number Publication date
JPWO2005079119A1 (ja) 2007-10-25
TWI345832B (enExample) 2011-07-21
US20070187665A1 (en) 2007-08-16
WO2005079119A1 (ja) 2005-08-25
CN1918948A (zh) 2007-02-21
TW200531273A (en) 2005-09-16
KR20060135816A (ko) 2006-12-29
CN100569036C (zh) 2009-12-09
EP1718123A4 (en) 2013-01-16
EP1718123A1 (en) 2006-11-02
KR100850754B1 (ko) 2008-08-06
US7531832B2 (en) 2009-05-12

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