JP4472082B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4472082B2
JP4472082B2 JP2000002028A JP2000002028A JP4472082B2 JP 4472082 B2 JP4472082 B2 JP 4472082B2 JP 2000002028 A JP2000002028 A JP 2000002028A JP 2000002028 A JP2000002028 A JP 2000002028A JP 4472082 B2 JP4472082 B2 JP 4472082B2
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Japan
Prior art keywords
film
semiconductor film
insulating film
silicon
tft
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Expired - Fee Related
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JP2000002028A
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English (en)
Japanese (ja)
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JP2001196306A (ja
JP2001196306A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000002028A priority Critical patent/JP4472082B2/ja
Publication of JP2001196306A publication Critical patent/JP2001196306A/ja
Publication of JP2001196306A5 publication Critical patent/JP2001196306A5/ja
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Publication of JP4472082B2 publication Critical patent/JP4472082B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000002028A 2000-01-07 2000-01-07 半導体装置の作製方法 Expired - Fee Related JP4472082B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000002028A JP4472082B2 (ja) 2000-01-07 2000-01-07 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000002028A JP4472082B2 (ja) 2000-01-07 2000-01-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001196306A JP2001196306A (ja) 2001-07-19
JP2001196306A5 JP2001196306A5 (enrdf_load_stackoverflow) 2007-02-15
JP4472082B2 true JP4472082B2 (ja) 2010-06-02

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ID=18531184

Family Applications (1)

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JP2000002028A Expired - Fee Related JP4472082B2 (ja) 2000-01-07 2000-01-07 半導体装置の作製方法

Country Status (1)

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JP (1) JP4472082B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
AU2003258288A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for processing a thin film sample and thin film structure
KR101224377B1 (ko) * 2006-02-17 2013-01-21 삼성디스플레이 주식회사 실리콘층의 형성방법 및 이를 이용한 표시기판의 제조방법

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Publication number Publication date
JP2001196306A (ja) 2001-07-19

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