JP4468873B2 - 液晶表示パネル及びその製造方法 - Google Patents
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- JP4468873B2 JP4468873B2 JP2005250586A JP2005250586A JP4468873B2 JP 4468873 B2 JP4468873 B2 JP 4468873B2 JP 2005250586 A JP2005250586 A JP 2005250586A JP 2005250586 A JP2005250586 A JP 2005250586A JP 4468873 B2 JP4468873 B2 JP 4468873B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 98
- 239000010408 film Substances 0.000 claims description 72
- 239000000565 sealant Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 239000003365 glass fiber Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 38
- 230000001681 protective effect Effects 0.000 description 28
- 230000008569 process Effects 0.000 description 26
- 229910052709 silver Inorganic materials 0.000 description 23
- 239000004332 silver Substances 0.000 description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 230000005540 biological transmission Effects 0.000 description 7
- 238000004049 embossing Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Description
106:ゲート電極
108:ソース電極
110:ドレイン電極
112:ゲート絶縁膜
114:活性層
116:オーミック接触層
118、136:保護膜
120、122、124:共通ライン
126:共通コンタクトホール
128:共通パッド
130:有機膜
156:反射電極
162:共通電極
172:FPCパッド
182、184:シーラント
142:画素電極
Claims (17)
- 共通電極を備える第1基板と、
前記共通電極と電界を形成する画素電極と、前記画素電極と接続された薄膜トランジスタと、前記薄膜トランジスタに信号を供給するための信号ラインと、前記信号ラインが形成された領域を除いた残りの領域に形成され、前記共通電極に共通電圧を供給するための複数のコンタクト部とを含む第2基板、
前記コンタクト部と前記共通電極とを接続させる導電性スペーサーを有する前記第1基板と第2基板との間の第1シーラント、及び、非導電性スペーサを有する第2シーラントを含むことを特徴とする液晶表示パネルであって、
前記第1シーラントは、U字状に基板の3辺に沿って形成され、
前記第2シーラントは、前記基板の3辺の残りの辺に沿って形成され、
前記コンタクト部は、前記基板の3辺に沿って形成された第1共通パターン、前記第1共通パターンを露出させる複数の共通コンタクトホール、並びに、絶縁膜、前記第1共通パターン、及び前記導電性スペーサーと接続され、前記第1共通パターンに従って形成される第2共通パターンを含むことを特徴とする液晶表示パネル。
- 前記導電性スペーサーは、導電性ガラスファイバー及び導電性ボールの中の一つで形成されることを特徴とする請求項1に記載の液晶表示パネル。
- 前記非導電性スペーサーは、ガラスファイバー及びホールスペーサーの中の一つで形成されることを特徴とする請求項1に記載の液晶表示パネル。
- 前記信号ラインは、前記薄膜トランジスタにゲート信号を供給するゲートラインと、前記薄膜トランジスタにデータ信号を供給するデータラインと、を含むことを特徴とする請求項1に記載の液晶表示パネル。
- 前記第2共通パターンは前記データラインとゲートラインとの中の一つと並立して形成されることを特徴とする請求項1に記載の液晶表示パネル。
- 前記第2共通パターンは液晶注入口に対応する領域に形成されることを特徴とする請求項1に記載の液晶表示パネル。
- 前記第2共通パターンは前記第2基板の角領域に形成されることを特徴とする請求項1に記載の液晶表示パネル。
- 前記第1及び第2共通パターンの両側と接続される前記第2基板の両側に形成された共通パッドをさらに含むことを特徴とする請求項1に記載の液晶表示パネル。
- 前記第1共通パターンが前記薄膜トランジスタのゲート電極と同一の金属で形成され、前記第2共通パターンは前記画素電極と同一の物質で形成されることを特徴とする請求項1に記載の液晶表示パネル。
- 前記コンタクト部は前記第1及び第2シーラントによって密封された領域に前記第2共通パターンと隣接され形成される第3及び第4共通パターンをさらに含むことを特徴とする請求項1に記載の液晶表示パネル。
- 前記第3及び第4共通パターンの中、少なくとも一つは前記薄膜トランジスタのソース電極と同一の金属で形成され、絶縁膜を貫通する第2共通コンタクトホールを通じて前記第1共通パターンと接続されることを特徴とする請求項10に記載の液晶表示パネル。
- 前記第2共通コンタクトホールが前記第1及び第2シーラントと重畳される領域に形成されることを特徴とする請求項11に記載の液晶表示パネル。
- 前記ゲートライン及びデータラインによって定義された画素領域の反射領域に形成される反射電極をさらに含むことを特徴とする請求項1に記載の液晶表示パネル。
- 共通電極が形成された第1基板を提供する段階と、
前記共通電極と電界を形成する画素電極と、前記画素電極と接続された薄膜トランジスタと、前記薄膜トランジスタに信号を供給する信号ライン及び前記信号ラインが形成された領域を除いた残りの領域に形成され、前記共通電極に共通電圧を供給するコンタクト部を含む第2基板を提供する段階と、
前記コンタクト部を前記共通電極と接続させる導電性スペーサーを備える第1シーラント、及び非導電性スペーサを有する第2シーラントを利用して前記第1基板と前記第2基板とを合着する段階とを含むことを特徴とする液晶表示パネルの製造方法であって、
前記第1シーラントは、U字状に基板の3辺に沿って形成され、
前記第2シーラントは、前記基板の3辺の残りの辺に沿って形成され、
前記コンタクト部は、前記基板の3辺に沿って形成された第1共通パターン、前記第1共通パターンを露出させる複数の共通コンタクトホール、並びに、絶縁膜、前記第1共通パターン、及び前記導電性スペーサーと接続され、前記第1共通パターンに従って形成される第2共通パターンを含むことを特徴とする液晶表示パネルの製造方法。
- 前記導電性スペーサーは、導電性ガラスファイバー及び導電性ボールの中の一つで形成されることを特徴とする請求項14に記載の液晶表示パネルの製造方法。
- 前記非導電性スペーサーは、ガラスファイバー及びボールスペーサーの中の一つであることを特徴とする請求項14に記載の液晶表示パネルの製造方法。
- 前記第1基板と前記第2基板との間に液晶層を形成する段階をさらに含むことを特徴とする請求項14に記載の液晶表示パネルの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020040111511A KR101107239B1 (ko) | 2004-12-23 | 2004-12-23 | 액정 표시 패널 및 그 제조방법 |
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JP2006178404A JP2006178404A (ja) | 2006-07-06 |
JP4468873B2 true JP4468873B2 (ja) | 2010-05-26 |
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US (1) | US7528921B2 (ja) |
JP (1) | JP4468873B2 (ja) |
KR (1) | KR101107239B1 (ja) |
CN (1) | CN100462790C (ja) |
Families Citing this family (49)
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KR100742376B1 (ko) * | 2005-09-30 | 2007-07-24 | 삼성에스디아이 주식회사 | 패드부 및 그 제조 방법 |
KR101182311B1 (ko) * | 2005-11-17 | 2012-09-20 | 엘지디스플레이 주식회사 | 액정 표시 패널 및 그 제조방법 |
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CN102496628B (zh) | 2008-09-19 | 2015-09-16 | 株式会社半导体能源研究所 | 显示装置 |
CN101706622B (zh) * | 2008-10-08 | 2012-07-04 | 深超光电(深圳)有限公司 | 薄膜晶体管液晶显示器结构及其制造方法 |
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KR20060072785A (ko) | 2006-06-28 |
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US20060139556A1 (en) | 2006-06-29 |
JP2006178404A (ja) | 2006-07-06 |
US7528921B2 (en) | 2009-05-05 |
KR101107239B1 (ko) | 2012-01-25 |
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