JP4466902B2 - ニッケル合金スパッタリングターゲット - Google Patents

ニッケル合金スパッタリングターゲット Download PDF

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Publication number
JP4466902B2
JP4466902B2 JP2003004685A JP2003004685A JP4466902B2 JP 4466902 B2 JP4466902 B2 JP 4466902B2 JP 2003004685 A JP2003004685 A JP 2003004685A JP 2003004685 A JP2003004685 A JP 2003004685A JP 4466902 B2 JP4466902 B2 JP 4466902B2
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JP
Japan
Prior art keywords
nickel alloy
film
sputtering target
alloy sputtering
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003004685A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004217967A (ja
Inventor
康廣 山越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nippon Mining and Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Priority to JP2003004685A priority Critical patent/JP4466902B2/ja
Priority to CNA2003801085083A priority patent/CN1735707A/zh
Priority to KR1020057012585A priority patent/KR100660731B1/ko
Priority to US10/540,638 priority patent/US20060037680A1/en
Priority to PCT/JP2003/012777 priority patent/WO2004063420A1/ja
Priority to TW092128062A priority patent/TWI227279B/zh
Publication of JP2004217967A publication Critical patent/JP2004217967A/ja
Application granted granted Critical
Publication of JP4466902B2 publication Critical patent/JP4466902B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
JP2003004685A 2003-01-10 2003-01-10 ニッケル合金スパッタリングターゲット Expired - Lifetime JP4466902B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003004685A JP4466902B2 (ja) 2003-01-10 2003-01-10 ニッケル合金スパッタリングターゲット
CNA2003801085083A CN1735707A (zh) 2003-01-10 2003-10-06 镍合金溅射靶
KR1020057012585A KR100660731B1 (ko) 2003-01-10 2003-10-06 니켈 합금 스퍼터링 타겟트
US10/540,638 US20060037680A1 (en) 2003-01-10 2003-10-06 Nickel alloy sputtering target
PCT/JP2003/012777 WO2004063420A1 (ja) 2003-01-10 2003-10-06 ニッケル合金スパッタリングターゲット
TW092128062A TWI227279B (en) 2003-01-10 2003-10-09 Nickel alloy sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003004685A JP4466902B2 (ja) 2003-01-10 2003-01-10 ニッケル合金スパッタリングターゲット

Publications (2)

Publication Number Publication Date
JP2004217967A JP2004217967A (ja) 2004-08-05
JP4466902B2 true JP4466902B2 (ja) 2010-05-26

Family

ID=32708970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003004685A Expired - Lifetime JP4466902B2 (ja) 2003-01-10 2003-01-10 ニッケル合金スパッタリングターゲット

Country Status (6)

Country Link
US (1) US20060037680A1 (ko)
JP (1) JP4466902B2 (ko)
KR (1) KR100660731B1 (ko)
CN (1) CN1735707A (ko)
TW (1) TWI227279B (ko)
WO (1) WO2004063420A1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014421A1 (en) * 2001-08-01 2003-02-20 Nikko Materials Company, Limited Method for producing high purity nickel, high purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target
JP4376487B2 (ja) * 2002-01-18 2009-12-02 日鉱金属株式会社 高純度ニッケル合金ターゲットの製造方法
JP4447556B2 (ja) * 2003-10-07 2010-04-07 日鉱金属株式会社 高純度Ｎｉ−Ｖ合金、同Ｎｉ−Ｖ合金からなるターゲット及び同Ｎｉ−Ｖ合金薄膜並びに高純度Ｎｉ−Ｖ合金の製造方法
US7605481B2 (en) * 2003-10-24 2009-10-20 Nippon Mining & Metals Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
WO2005083138A1 (ja) * 2004-03-01 2005-09-09 Nippon Mining & Metals Co., Ltd. Ni-Pt合金及び同合金ターゲット
EP1813694B1 (en) * 2004-11-15 2018-06-20 JX Nippon Mining & Metals Corporation Sputtering target for production of metallic glass film and process for producing the same
EP1813344B1 (en) * 2004-11-15 2014-08-13 JX Nippon Mining & Metals Corporation Hydrogen separation membrane, sputtering target for forming of hydrogen separation membrane, and process for producing the same
US7419907B2 (en) * 2005-07-01 2008-09-02 International Business Machines Corporation Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure
JP2009167530A (ja) * 2009-02-10 2009-07-30 Nippon Mining & Metals Co Ltd ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜
EP2431494B1 (en) * 2009-04-17 2013-11-06 JX Nippon Mining & Metals Corporation Barrier film for semiconductor wiring, sintered sputtering target, and method of manufacturing sputtering targets
KR20120094132A (ko) 2010-03-19 2012-08-23 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 니켈 합금 스퍼터링 타깃, Ｎｉ 합금 박막 및 니켈 실리사이드막
CN101956159A (zh) * 2010-09-30 2011-01-26 金堆城钼业股份有限公司 一种高纯钼溅射靶材的制备方法
JP5410466B2 (ja) * 2011-03-01 2014-02-05 株式会社神戸製鋼所 ステンレス鋼フラックス入りワイヤ
JP2015193909A (ja) * 2014-03-25 2015-11-05 Jx日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法並びにスパッタリング法で形成した膜
CN105861999B (zh) * 2016-04-05 2018-08-07 基迈克材料科技（苏州）有限公司 高纯细晶金属镍热挤压旋转靶材
CN105734507B (zh) * 2016-04-05 2018-06-19 基迈克材料科技（苏州）有限公司 成膜均匀的细晶镍合金旋转靶材及其热挤压优化制备方法
JP6384523B2 (ja) * 2016-06-22 2018-09-05 三菱マテリアル株式会社 Ｎｉ又はＮｉ合金スパッタリングターゲット

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277809A (en) * 1979-09-26 1981-07-07 Memorex Corporation Apparatus for recording magnetic impulses perpendicular to the surface of a recording medium
DE3712271A1 (de) * 1987-04-10 1988-10-27 Vacuumschmelze Gmbh Nickelbasis-lot fuer hochtemperatur-loetverbindungen
JPH07100835B2 (ja) * 1987-11-11 1995-11-01 東北特殊鋼株式会社 磁性薄膜及びその製造方法
KR950013191B1 (ko) * 1990-06-29 1995-10-25 가부시키가이샤 도시바 Fe-Ni계 합금
JPH06104120A (ja) * 1992-08-03 1994-04-15 Hitachi Metals Ltd 磁気記録媒体用スパッタリングターゲットおよびその製造方法
WO1995004167A1 (fr) * 1993-07-27 1995-02-09 Kabushiki Kaisha Toshiba Cible en siliciure metallique a point de fusion eleve, son procede de production, couche en siliciure metallique a point de fusion eleve, et dispositif a semi-conducteurs
JPH08311642A (ja) * 1995-03-10 1996-11-26 Toshiba Corp マグネトロンスパッタリング法及びスパッタリングターゲット
DE19609439A1 (de) * 1995-03-14 1996-09-19 Japan Energy Corp Verfahren zum Erzeugen von hochreinem Kobalt und Sputtering-Targets aus hochreinem Kobalt
JPH09153616A (ja) * 1995-09-28 1997-06-10 Toshiba Corp 半導体装置およびその製造方法
JPH1180936A (ja) * 1997-09-08 1999-03-26 Hitachi Metals Ltd ブラックマトリクス用薄膜およびブラックマトリクス成膜用ターゲット
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
JPH11204791A (ja) * 1997-11-17 1999-07-30 Toshiba Corp 半導体装置及びその製造方法
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
JPH11335821A (ja) * 1998-05-20 1999-12-07 Japan Energy Corp 磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲットの製造方法
US6342114B1 (en) * 1999-03-31 2002-01-29 Praxair S.T. Technology, Inc. Nickel/vanadium sputtering target with ultra-low alpha emission
US6190516B1 (en) * 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
JP2001279432A (ja) * 2000-01-27 2001-10-10 Mitsui Mining & Smelting Co Ltd 低酸素スパッタリングターゲット
JP4487225B2 (ja) * 2000-03-23 2010-06-23 日立金属株式会社 Ｎｉ−Ｎｂ系ターゲット材およびロウ材用下地膜
WO2003014421A1 (en) * 2001-08-01 2003-02-20 Nikko Materials Company, Limited Method for producing high purity nickel, high purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target
JP4376487B2 (ja) * 2002-01-18 2009-12-02 日鉱金属株式会社 高純度ニッケル合金ターゲットの製造方法
JP4447556B2 (ja) * 2003-10-07 2010-04-07 日鉱金属株式会社 高純度Ｎｉ−Ｖ合金、同Ｎｉ−Ｖ合金からなるターゲット及び同Ｎｉ−Ｖ合金薄膜並びに高純度Ｎｉ−Ｖ合金の製造方法
US7605481B2 (en) * 2003-10-24 2009-10-20 Nippon Mining & Metals Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
WO2005083138A1 (ja) * 2004-03-01 2005-09-09 Nippon Mining & Metals Co., Ltd. Ni-Pt合金及び同合金ターゲット

Also Published As

Publication number Publication date
KR20050097930A (ko) 2005-10-10
WO2004063420A1 (ja) 2004-07-29
JP2004217967A (ja) 2004-08-05
KR100660731B1 (ko) 2006-12-21
CN1735707A (zh) 2006-02-15
TWI227279B (en) 2005-02-01
US20060037680A1 (en) 2006-02-23
TW200413548A (en) 2004-08-01

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