JP4461507B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP4461507B2 JP4461507B2 JP15687199A JP15687199A JP4461507B2 JP 4461507 B2 JP4461507 B2 JP 4461507B2 JP 15687199 A JP15687199 A JP 15687199A JP 15687199 A JP15687199 A JP 15687199A JP 4461507 B2 JP4461507 B2 JP 4461507B2
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- mounting table
- processing container
- forming apparatus
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title description 2
- 238000012545 processing Methods 0.000 claims description 58
- 230000003746 surface roughness Effects 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 40
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 18
- 238000001020 plasma etching Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 238000005422 blasting Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 61
- 235000012431 wafers Nutrition 0.000 description 28
- 238000004140 cleaning Methods 0.000 description 22
- 239000002245 particle Substances 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005755 formation reaction Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 6
- 229910021342 tungsten silicide Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- -1 titanium) Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010453 quartz Chemical group 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15687199A JP4461507B2 (ja) | 1999-06-03 | 1999-06-03 | 成膜装置 |
| PCT/JP2000/003358 WO2000075971A1 (fr) | 1999-06-03 | 2000-05-25 | Appareil de formation de film |
| TW89110803A TW484175B (en) | 1999-06-03 | 2000-06-02 | Film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15687199A JP4461507B2 (ja) | 1999-06-03 | 1999-06-03 | 成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000345343A JP2000345343A (ja) | 2000-12-12 |
| JP2000345343A5 JP2000345343A5 (enrdf_load_stackoverflow) | 2006-07-27 |
| JP4461507B2 true JP4461507B2 (ja) | 2010-05-12 |
Family
ID=15637222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15687199A Expired - Fee Related JP4461507B2 (ja) | 1999-06-03 | 1999-06-03 | 成膜装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4461507B2 (enrdf_load_stackoverflow) |
| TW (1) | TW484175B (enrdf_load_stackoverflow) |
| WO (1) | WO2000075971A1 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4639477B2 (ja) * | 2001-01-24 | 2011-02-23 | 富士電機デバイステクノロジー株式会社 | 磁気記録媒体の製造方法 |
| JP4597894B2 (ja) * | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
| JP5347487B2 (ja) * | 2008-12-24 | 2013-11-20 | 富士電機株式会社 | シャワー電極板及びプラズマｃｖｄ装置 |
| JP2013166990A (ja) * | 2012-02-15 | 2013-08-29 | Fujifilm Corp | 機能性フィルムおよび機能性フィルムの製造方法 |
| JP7164332B2 (ja) * | 2018-06-20 | 2022-11-01 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP7172717B2 (ja) * | 2019-02-25 | 2022-11-16 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板 |
| JP6733802B1 (ja) * | 2019-05-28 | 2020-08-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びサセプタ |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179309A (ja) * | 1987-12-30 | 1989-07-17 | Tokyo Electron Ltd | 加熱法 |
| JPH03177561A (ja) * | 1989-09-19 | 1991-08-01 | Nippon Mining Co Ltd | 薄膜形成装置 |
| JPH04232256A (ja) * | 1990-12-28 | 1992-08-20 | Nikko Kyodo Co Ltd | 薄膜形成装置 |
| JP3052116B2 (ja) * | 1994-10-26 | 2000-06-12 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP3788836B2 (ja) * | 1996-12-24 | 2006-06-21 | 東芝セラミックス株式会社 | 気相成長用サセプタ及びその製造方法 |
| JP4037956B2 (ja) * | 1998-04-28 | 2008-01-23 | 東海カーボン株式会社 | チャンバー内壁保護部材 |
-
1999
- 1999-06-03 JP JP15687199A patent/JP4461507B2/ja not_active Expired - Fee Related
-
2000
- 2000-05-25 WO PCT/JP2000/003358 patent/WO2000075971A1/ja active Application Filing
- 2000-06-02 TW TW89110803A patent/TW484175B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000345343A (ja) | 2000-12-12 |
| TW484175B (en) | 2002-04-21 |
| WO2000075971A1 (fr) | 2000-12-14 |
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