JP4459914B2 - インプリントリソグラフィ - Google Patents

インプリントリソグラフィ Download PDF

Info

Publication number
JP4459914B2
JP4459914B2 JP2006039322A JP2006039322A JP4459914B2 JP 4459914 B2 JP4459914 B2 JP 4459914B2 JP 2006039322 A JP2006039322 A JP 2006039322A JP 2006039322 A JP2006039322 A JP 2006039322A JP 4459914 B2 JP4459914 B2 JP 4459914B2
Authority
JP
Japan
Prior art keywords
substrate
template
imprint
force
compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006039322A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006229232A (ja
Inventor
ヴェンデラ クルイート − シュテゲマン イボンヌ
ヴィルヘルムス アロイシウス ヤンセン ヘンリクス
ユリーフィヒ コレスニーチェンコ アレクセイ
ファン サンテン ヘルマー
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2006229232A publication Critical patent/JP2006229232A/ja
Application granted granted Critical
Publication of JP4459914B2 publication Critical patent/JP4459914B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/887—Nanoimprint lithography, i.e. nanostamp

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
JP2006039322A 2005-02-17 2006-02-16 インプリントリソグラフィ Expired - Fee Related JP4459914B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/155,941 US7922474B2 (en) 2005-02-17 2005-02-17 Imprint lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010003894A Division JP5249250B2 (ja) 2005-02-17 2010-01-12 インプリント方法およびインプリント装置

Publications (2)

Publication Number Publication Date
JP2006229232A JP2006229232A (ja) 2006-08-31
JP4459914B2 true JP4459914B2 (ja) 2010-04-28

Family

ID=36814864

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006039322A Expired - Fee Related JP4459914B2 (ja) 2005-02-17 2006-02-16 インプリントリソグラフィ
JP2010003894A Expired - Fee Related JP5249250B2 (ja) 2005-02-17 2010-01-12 インプリント方法およびインプリント装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010003894A Expired - Fee Related JP5249250B2 (ja) 2005-02-17 2010-01-12 インプリント方法およびインプリント装置

Country Status (2)

Country Link
US (1) US7922474B2 (enExample)
JP (2) JP4459914B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087533A (ja) * 2005-02-17 2010-04-15 Asml Netherlands Bv インプリントリソグラフィ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080160129A1 (en) 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7789294B2 (en) * 2005-02-18 2010-09-07 Ebet Systems Pty Ltd System and method for monitoring a validator
JP4595120B2 (ja) * 2005-05-27 2010-12-08 独立行政法人産業技術総合研究所 裏面加圧によるインプリント方法及び装置
US7613538B2 (en) * 2006-07-24 2009-11-03 Hewlett-Packard Development Company, L.P. Compensation for distortion in contact lithography
WO2008097278A2 (en) * 2006-09-19 2008-08-14 Molecular Imprints, Inc. Etch-enhanced technique for lift-off patterning
US8652393B2 (en) 2008-10-24 2014-02-18 Molecular Imprints, Inc. Strain and kinetics control during separation phase of imprint process
NL2006929A (en) 2010-08-05 2012-02-13 Asml Netherlands Bv Imprint lithography.
JP5995567B2 (ja) * 2012-07-12 2016-09-21 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3187014B2 (ja) * 1990-01-24 2001-07-11 ホーヤ株式会社 レンズ成形用型
US5512131A (en) 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
JP2691148B2 (ja) * 1995-08-22 1997-12-17 エドカ工業株式会社 シート状レンズの製法
US6309580B1 (en) 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US6518189B1 (en) 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US20030080471A1 (en) 2001-10-29 2003-05-01 Chou Stephen Y. Lithographic method for molding pattern with nanoscale features
US20040036201A1 (en) 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US6482742B1 (en) 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
EP1003078A3 (en) 1998-11-17 2001-11-07 Corning Incorporated Replicating a nanoscale pattern
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
SE515607C2 (sv) 1999-12-10 2001-09-10 Obducat Ab Anordning och metod vid tillverkning av strukturer
US6165911A (en) 1999-12-29 2000-12-26 Calveley; Peter Braden Method of patterning a metal layer
AU2001228987A1 (en) 2000-01-21 2001-07-31 Obducat Aktiebolag A mold for nano imprinting
SE515785C2 (sv) 2000-02-23 2001-10-08 Obducat Ab Anordning för homogen värmning av ett objekt och användning av anordningen
SE515962C2 (sv) 2000-03-15 2001-11-05 Obducat Ab Anordning för överföring av mönster till objekt
SE0001367L (sv) 2000-04-13 2001-10-14 Obducat Ab Apparat och förfarande för elektrokemisk bearbetning av substrat
SE0001368L (sv) 2000-04-13 2001-10-14 Obducat Ab Apparat och förfarande för elektrokemisk bearbetning av substrat
SE516194C2 (sv) 2000-04-18 2001-12-03 Obducat Ab Substrat för samt process vid tillverkning av strukturer
US6365059B1 (en) 2000-04-28 2002-04-02 Alexander Pechenik Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate
SE516414C2 (sv) 2000-05-24 2002-01-15 Obducat Ab Metod vid tillverkning av en mall, samt mallen tillverkad därav
EP2264522A3 (en) 2000-07-16 2011-12-14 The Board of Regents of The University of Texas System Method of forming a pattern on a substrate
CN1262883C (zh) 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 影印用于平版印刷工艺中的自动化液体分配的方法和系统
US7211214B2 (en) 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
EP1309897A2 (en) 2000-08-01 2003-05-14 Board Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
SE519478C2 (sv) 2000-09-19 2003-03-04 Obducat Ab Etsförfarande, såväl som ramelement, mask och förtillverkat substratelement för användning i sådan etsning
AU2001297642A1 (en) 2000-10-12 2002-09-04 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US6847433B2 (en) 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
SE519573C2 (sv) 2001-07-05 2003-03-11 Obducat Ab Stamp med antividhäftningsskikt samt sätt att framställa och sätt att reparera en sådan stamp
JP3588633B2 (ja) 2001-09-04 2004-11-17 独立行政法人産業技術総合研究所 インプリントリソグラフィー用移動ステージ
US7144539B2 (en) 2002-04-04 2006-12-05 Obducat Ab Imprint method and device
WO2003099536A1 (en) 2002-05-24 2003-12-04 Chou Stephen Y Methods and apparatus of field-induced pressure imprint lithography
US7252492B2 (en) 2002-06-20 2007-08-07 Obducat Ab Devices and methods for aligning a stamp and a substrate
JP2004034300A (ja) * 2002-06-28 2004-02-05 Elionix Kk 微小型押成形装置
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6908861B2 (en) 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
TWI277836B (en) * 2002-10-17 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Method and apparatus for forming pattern on thin-substrate or the like
US6755984B2 (en) 2002-10-24 2004-06-29 Hewlett-Packard Development Company, L.P. Micro-casted silicon carbide nano-imprinting stamp
US6916511B2 (en) 2002-10-24 2005-07-12 Hewlett-Packard Development Company, L.P. Method of hardening a nano-imprinting stamp
JP4317375B2 (ja) * 2003-03-20 2009-08-19 株式会社日立製作所 ナノプリント装置、及び微細構造転写方法
EP1606834B1 (en) 2003-03-27 2013-06-05 Korea Institute Of Machinery & Materials Uv nanoimprint lithography process using elementwise embossed stamp
US20040209123A1 (en) 2003-04-17 2004-10-21 Bajorek Christopher H. Method of fabricating a discrete track recording disk using a bilayer resist for metal lift-off
TW568349U (en) 2003-05-02 2003-12-21 Ind Tech Res Inst Parallelism adjusting device for nano-transferring
TW570290U (en) 2003-05-02 2004-01-01 Ind Tech Res Inst Uniform pressing device for nanometer transfer-print
US6829988B2 (en) * 2003-05-16 2004-12-14 Suss Microtec, Inc. Nanoimprinting apparatus and method
JP2005085965A (ja) * 2003-09-08 2005-03-31 Canon Inc 近接場露光用マスク、近接場露光方法、及び近接場露光装置
JP2005101201A (ja) 2003-09-24 2005-04-14 Canon Inc ナノインプリント装置
JP4455092B2 (ja) * 2004-02-20 2010-04-21 キヤノン株式会社 加工装置及び加工方法
US7168939B2 (en) * 2004-02-26 2007-01-30 Hitachi Global Storage Technologies Netherlands Bv System, method, and apparatus for multilevel UV molding lithography for air bearing surface patterning
WO2005119802A2 (en) 2004-05-28 2005-12-15 Board Of Regents, The University Of Texas System Adaptive shape substrate support system and method
JP4304139B2 (ja) 2004-09-30 2009-07-29 株式会社東芝 インプリント装置
US7922474B2 (en) * 2005-02-17 2011-04-12 Asml Netherlands B.V. Imprint lithography
JP3958344B2 (ja) * 2005-06-07 2007-08-15 キヤノン株式会社 インプリント装置、インプリント方法及びチップの製造方法
US7207871B1 (en) * 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
US7618752B2 (en) * 2006-10-12 2009-11-17 Hewlett-Packard Development Company, L.P. Deformation-based contact lithography systems, apparatus and methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087533A (ja) * 2005-02-17 2010-04-15 Asml Netherlands Bv インプリントリソグラフィ

Also Published As

Publication number Publication date
US20060180952A1 (en) 2006-08-17
JP2006229232A (ja) 2006-08-31
US7922474B2 (en) 2011-04-12
JP5249250B2 (ja) 2013-07-31
JP2010087533A (ja) 2010-04-15

Similar Documents

Publication Publication Date Title
JP5249250B2 (ja) インプリント方法およびインプリント装置
JP4625042B2 (ja) インプリントリソグラフィ
US7363854B2 (en) System and method for patterning both sides of a substrate utilizing imprint lithography
JP4842216B2 (ja) インプリントリソグラフィ
JP4630886B2 (ja) インプリントリソグラフィ
JP5883527B2 (ja) インプリント・リソグラフィ
US7931844B2 (en) Imprint lithography
US7943080B2 (en) Alignment for imprint lithography
US7490547B2 (en) Imprint lithography
JP4679424B2 (ja) インプリント・リソグラフィ
US20070023976A1 (en) Imprint lithography
US20060144814A1 (en) Imprint lithography

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20061212

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20070529

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090309

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090311

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090611

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091009

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100202

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100210

R150 Certificate of patent or registration of utility model

Ref document number: 4459914

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140219

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees