JP4446949B2 - エレベイテッドサリサイドソース/ドレイン領域の形成方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 121
- 238000002955 isolation Methods 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 49
- 229910021332 silicide Inorganic materials 0.000 claims description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021334 nickel silicide Inorganic materials 0.000 claims 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021339 platinum silicide Inorganic materials 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000011800 void material Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 8
- 229910052723 transition metal Inorganic materials 0.000 description 8
- 150000003624 transition metals Chemical class 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
- H01L29/66598—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET forming drain [D] and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図18A及び図18AのX−X’線の断面図である図18Bに示されるように、半導体基板10の所定部分にトレンチ素子分離膜Aを形成することによって活性領域Cを画定する。前記トレンチ素子分離膜A内には上部が開放されたボイド16が形成されている。その後、ゲート電極Bを形成するために半導体基板10上にゲート酸化膜(図示せず)及びポリシリコン膜を順次に形成し、フォトリソグラフィー工程を行ってゲート酸化膜が介在されたゲート電極Bを形成することになる。ところが、この時ゲート電極Bをなす導電物質、例えばポリシリコン18が上部の開放されたボイド16に充填されることになる。これは、ポリシリコン膜の形成過程で上部の開放されたボイド16に充填されたポリシリコンが、ゲート電極Bをパタニングするフォトリソグラフィー工程によっては、完全に除去されないからである。このように、ゲート電極Bを形成する過程で上部の開放されたボイド16に導電物質が充填されると、図18Aに示されているように隣接するゲート電極B間にブリッジIを誘発することになる。
56 T型素子分離膜。
Claims (4)
- (a)下部には第1幅及び第1深さを有する狭幅トレンチ領域を備え、上部には前記第1幅より広い第2幅及び前記第1深さより浅い第2深さを有する拡幅トレンチ領域を有するT型素子分離膜を形成する段階と、
(b)前記T型素子分離膜により画定された活性領域上にゲート酸化膜、ゲート電極及びスペーサよりなるゲート電極パターンを形成する段階と、
(c)前記ゲート電極パターンの左右に露出された前記活性領域上及び前記ゲート電極上に半導体物質膜を成長させる段階と、
(d)前記ゲート電極パターンをイオン注入マスクとして用いて、導電型不純物を前記半導体物質膜及び前記露出された活性領域に注入すると同時に、前記狭幅トレンチ領域の上端部から左右側に延長された前記拡幅トレンチ領域である前記T型素子分離膜のヘッド部の下部にも前記導電型不純物が注入されるように前記導電型不純物を注入して、エレベイテッドソース/ドレイン領域を形成する段階と、
(e)前記エレベイテッドソース/ドレイン領域上にサリサイド工程によりシリサイド膜を形成する段階と、
を含むエレベイテッドサリサイドソース/ドレイン領域の形成方法。 - 前記第2深さは1000Å以下であることを特徴とする請求項1に記載のエレベイテッドサリサイドソース/ドレイン領域の形成方法。
- 前記(c)段階は選択エピタキシャル成長法を用いて半導体物質膜を成長させる段階であることを特徴とする請求項1に記載のエレベイテッドサリサイドソース/ドレイン領域の形成方法。
- 前記シリサイド膜は、チタンシリサイド膜、タンタルシリサイド膜、ニッケルシリサイド膜、コバルトシリサイド膜及び白金シリサイド膜のうちから選択された何れか1つであることを特徴とする請求項1に記載のエレベイテッドサリサイドソース/ドレイン領域の形成方法。
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Application Number | Priority Date | Filing Date | Title |
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KR19990018268 | 1999-05-20 | ||
KR1019990043784A KR100338766B1 (ko) | 1999-05-20 | 1999-10-11 | 티(t)형 소자분리막 형성방법을 이용한 엘리베이티드 샐리사이드 소오스/드레인 영역 형성방법 및 이를 이용한 반도체 소자 |
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JP2000150672A Division JP3998893B2 (ja) | 1999-05-20 | 2000-05-22 | T型素子分離膜の形成方法 |
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JP2006066927A JP2006066927A (ja) | 2006-03-09 |
JP4446949B2 true JP4446949B2 (ja) | 2010-04-07 |
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JP2005280957A Expired - Fee Related JP4446949B2 (ja) | 1999-05-20 | 2005-09-27 | エレベイテッドサリサイドソース/ドレイン領域の形成方法 |
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US (2) | US6383877B1 (ja) |
JP (2) | JP3998893B2 (ja) |
KR (1) | KR100338766B1 (ja) |
TW (1) | TW516162B (ja) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100630664B1 (ko) * | 2000-05-09 | 2006-10-02 | 삼성전자주식회사 | 냉각 시스템을 가지는 집적 회로 소자 |
JP3650022B2 (ja) * | 2000-11-13 | 2005-05-18 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6921947B2 (en) * | 2000-12-15 | 2005-07-26 | Renesas Technology Corp. | Semiconductor device having recessed isolation insulation film |
US6727558B1 (en) * | 2001-02-15 | 2004-04-27 | Advanced Micro Devices, Inc. | Channel isolation using dielectric isolation structures |
JP2003060024A (ja) * | 2001-08-13 | 2003-02-28 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
KR100402392B1 (ko) * | 2001-11-06 | 2003-10-17 | 삼성전자주식회사 | 트렌치 소자분리 구조를 갖는 반도체 소자 및 그 제조방법 |
KR100414735B1 (ko) * | 2001-12-10 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체소자 및 그 형성 방법 |
KR20030050784A (ko) * | 2001-12-19 | 2003-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR20030050785A (ko) * | 2001-12-19 | 2003-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100400782B1 (ko) * | 2001-12-27 | 2003-10-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100412144B1 (ko) * | 2002-05-16 | 2003-12-31 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
KR100466207B1 (ko) * | 2002-07-04 | 2005-01-13 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
US6833602B1 (en) * | 2002-09-06 | 2004-12-21 | Lattice Semiconductor Corporation | Device having electrically isolated low voltage and high voltage regions and process for fabricating the device |
US20040256671A1 (en) * | 2003-06-17 | 2004-12-23 | Kuo-Tai Huang | Metal-oxide-semiconductor transistor with selective epitaxial growth film |
US7402207B1 (en) | 2004-05-05 | 2008-07-22 | Advanced Micro Devices, Inc. | Method and apparatus for controlling the thickness of a selective epitaxial growth layer |
KR100669664B1 (ko) * | 2004-09-14 | 2007-01-15 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US7456062B1 (en) | 2004-10-20 | 2008-11-25 | Advanced Micro Devices, Inc. | Method of forming a semiconductor device |
US7402485B1 (en) | 2004-10-20 | 2008-07-22 | Advanced Micro Devices, Inc. | Method of forming a semiconductor device |
US7416956B2 (en) * | 2004-11-23 | 2008-08-26 | Sandisk Corporation | Self-aligned trench filling for narrow gap isolation regions |
US7276433B2 (en) * | 2004-12-03 | 2007-10-02 | Micron Technology, Inc. | Methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors |
KR100593452B1 (ko) * | 2005-02-01 | 2006-06-28 | 삼성전자주식회사 | 전체실리사이드 금속게이트전극을 갖는 모스 트랜지스터의제조방법 |
US20060281271A1 (en) * | 2005-06-13 | 2006-12-14 | Advanced Micro Devices, Inc. | Method of forming a semiconductor device having an epitaxial layer and device thereof |
US7553732B1 (en) * | 2005-06-13 | 2009-06-30 | Advanced Micro Devices, Inc. | Integration scheme for constrained SEG growth on poly during raised S/D processing |
US20070235783A9 (en) * | 2005-07-19 | 2007-10-11 | Micron Technology, Inc. | Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions |
US7772672B2 (en) | 2005-09-01 | 2010-08-10 | Micron Technology, Inc. | Semiconductor constructions |
US7572705B1 (en) | 2005-09-21 | 2009-08-11 | Advanced Micro Devices, Inc. | Semiconductor device and method of manufacturing a semiconductor device |
KR100707593B1 (ko) * | 2005-12-27 | 2007-04-13 | 동부일렉트로닉스 주식회사 | 반도체 소자의 이중 소자분리 구조 및 그 형성 방법 |
JP2007220739A (ja) * | 2006-02-14 | 2007-08-30 | Sony Corp | 半導体装置及びその製造方法並びに酸窒化シリコン膜の形成方法 |
US20070194403A1 (en) * | 2006-02-23 | 2007-08-23 | International Business Machines Corporation | Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods |
US7799694B2 (en) | 2006-04-11 | 2010-09-21 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
KR100810409B1 (ko) * | 2006-10-31 | 2008-03-04 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 형성 방법 |
CN101847607B (zh) * | 2009-03-27 | 2014-08-20 | 联华电子股份有限公司 | 快闪存储器的工艺及应用于快闪存储器的绝缘结构 |
KR101201903B1 (ko) * | 2010-07-20 | 2012-11-16 | 매그나칩 반도체 유한회사 | 반도체소자의 소자분리 구조 및 그 형성방법 |
US9054221B2 (en) * | 2011-08-31 | 2015-06-09 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device with a common back gate isolation region and method for manufacturing the same |
US9214400B2 (en) * | 2011-08-31 | 2015-12-15 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device with back gate isolation regions and method for manufacturing the same |
US8623713B2 (en) * | 2011-09-15 | 2014-01-07 | International Business Machines Corporation | Trench isolation structure |
US20130093062A1 (en) * | 2011-10-18 | 2013-04-18 | Ying-Chih Lin | Semiconductor structure and process thereof |
US20140327084A1 (en) | 2013-05-01 | 2014-11-06 | International Business Machines Corporation | Dual shallow trench isolation (sti) field effect transistor (fet) and methods of forming |
KR102072410B1 (ko) | 2013-08-07 | 2020-02-03 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9379106B2 (en) | 2013-08-22 | 2016-06-28 | Samsung Electronics Co., Ltd. | Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels |
KR102025309B1 (ko) * | 2013-08-22 | 2019-09-25 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
CN106960789B (zh) * | 2016-01-08 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件以及改善半导体器件性能的方法 |
US20170278925A1 (en) * | 2016-03-23 | 2017-09-28 | Globalfoundries Inc. | Introducing material with a lower etch rate to form a t-shaped sdb sti structure |
CN110299398B (zh) | 2018-03-22 | 2022-04-19 | 联华电子股份有限公司 | 高电压晶体管及其制造方法 |
JP2020129654A (ja) * | 2019-01-18 | 2020-08-27 | ヘリオス バイオエレクトロニクス インコーポレイテッド | マルチレベルエッチングの方法、半導体センシングデバイス、および半導体センシングデバイスを製造するための方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472240A (en) * | 1981-08-21 | 1984-09-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing semiconductor device |
JP2635796B2 (ja) * | 1990-04-03 | 1997-07-30 | 株式会社東芝 | 圧延制御装置 |
JPH05343509A (ja) * | 1992-06-05 | 1993-12-24 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US5242847A (en) | 1992-07-27 | 1993-09-07 | North Carolina State University At Raleigh | Selective deposition of doped silion-germanium alloy on semiconductor substrate |
US5536675A (en) * | 1993-12-30 | 1996-07-16 | Intel Corporation | Isolation structure formation for semiconductor circuit fabrication |
DE69516769T2 (de) * | 1994-03-15 | 2000-12-28 | National Semiconductor Corp., Sunnyvale | Planarisierter isolationsgraben und feldoxid-isolationsstruktur |
JP3329640B2 (ja) * | 1995-10-10 | 2002-09-30 | 株式会社東芝 | 半導体装置の製造方法 |
US5874317A (en) * | 1996-06-12 | 1999-02-23 | Advanced Micro Devices, Inc. | Trench isolation for integrated circuits |
US5824586A (en) * | 1996-10-23 | 1998-10-20 | Advanced Micro Devices, Inc. | Method of manufacturing a raised source/drain MOSFET |
TW358989B (en) * | 1997-04-08 | 1999-05-21 | United Microelectronics Corp | Method of forming gold-oxygen semiconductor cells |
US6121100A (en) * | 1997-12-31 | 2000-09-19 | Intel Corporation | Method of fabricating a MOS transistor with a raised source/drain extension |
US6165871A (en) * | 1999-07-16 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Method of making low-leakage architecture for sub-0.18 μm salicided CMOS device |
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JP3998893B2 (ja) | 2007-10-31 |
US6383877B1 (en) | 2002-05-07 |
TW516162B (en) | 2003-01-01 |
JP2006066927A (ja) | 2006-03-09 |
US6624496B2 (en) | 2003-09-23 |
KR20000075409A (ko) | 2000-12-15 |
KR100338766B1 (ko) | 2002-05-30 |
US20020090795A1 (en) | 2002-07-11 |
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