JP4439665B2 - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置 Download PDF

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Publication number
JP4439665B2
JP4439665B2 JP2000092547A JP2000092547A JP4439665B2 JP 4439665 B2 JP4439665 B2 JP 4439665B2 JP 2000092547 A JP2000092547 A JP 2000092547A JP 2000092547 A JP2000092547 A JP 2000092547A JP 4439665 B2 JP4439665 B2 JP 4439665B2
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JP
Japan
Prior art keywords
electrode
film formation
particles
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000092547A
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English (en)
Japanese (ja)
Other versions
JP2001279446A5 (enExample
JP2001279446A (ja
Inventor
雅人 米澤
直人 楠本
久人 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, TDK Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000092547A priority Critical patent/JP4439665B2/ja
Priority to US09/820,520 priority patent/US7594479B2/en
Publication of JP2001279446A publication Critical patent/JP2001279446A/ja
Publication of JP2001279446A5 publication Critical patent/JP2001279446A5/ja
Application granted granted Critical
Publication of JP4439665B2 publication Critical patent/JP4439665B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000092547A 2000-03-29 2000-03-29 プラズマｃｖｄ装置 Expired - Fee Related JP4439665B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000092547A JP4439665B2 (ja) 2000-03-29 2000-03-29 プラズマｃｖｄ装置
US09/820,520 US7594479B2 (en) 2000-03-29 2001-03-28 Plasma CVD device and discharge electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000092547A JP4439665B2 (ja) 2000-03-29 2000-03-29 プラズマｃｖｄ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009252626A Division JP2010031381A (ja) 2009-11-04 2009-11-04 プラズマｃｖｄ装置

Publications (3)

Publication Number Publication Date
JP2001279446A JP2001279446A (ja) 2001-10-10
JP2001279446A5 JP2001279446A5 (enExample) 2007-04-12
JP4439665B2 true JP4439665B2 (ja) 2010-03-24

Family

ID=18607864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000092547A Expired - Fee Related JP4439665B2 (ja) 2000-03-29 2000-03-29 プラズマｃｖｄ装置

Country Status (2)

Country Link
US (1) US7594479B2 (enExample)
JP (1) JP4439665B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010031381A (ja) * 2009-11-04 2010-02-12 Semiconductor Energy Lab Co Ltd プラズマｃｖｄ装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI328050B (en) * 2005-05-10 2010-08-01 Ulvac Inc Reeling type plasma cvd device
SG2012059440A (en) * 2007-08-10 2014-03-28 Quantum Global Tech Llc Methods and apparatus for ex situ seasoning of electronic device manufacturing process components
US8192806B1 (en) * 2008-02-19 2012-06-05 Novellus Systems, Inc. Plasma particle extraction process for PECVD
JP5698950B2 (ja) * 2009-10-23 2015-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8865259B2 (en) * 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
JP5793170B2 (ja) * 2013-09-30 2015-10-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6209064B2 (ja) * 2013-11-13 2017-10-04 東レエンジニアリング株式会社 薄膜形成装置
DE102017108290B4 (de) * 2016-04-25 2021-05-06 Toyota Jidosha Kabushiki Kaisha Plasmavorrichtung
US11251019B2 (en) 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
CN111575672B (zh) * 2020-06-05 2022-09-23 浙江晶驰光电科技有限公司 一种真空溅射镀膜机及其吸灰方法

Family Cites Families (16)

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JPS52122581A (en) 1976-04-07 1977-10-14 Koatsu Gas Kogyo Method of promotion of swine health
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4410558A (en) 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4519339A (en) 1981-03-16 1985-05-28 Sovonics Solar Systems Continuous amorphous solar cell production system
JPS58216475A (ja) 1982-06-09 1983-12-16 Agency Of Ind Science & Technol シリコン太陽電池の製造方法
JPS5934668A (ja) 1982-08-21 1984-02-25 Agency Of Ind Science & Technol 薄膜太陽電池の製造方法
US4520757A (en) 1982-10-27 1985-06-04 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4479455A (en) 1983-03-14 1984-10-30 Energy Conversion Devices, Inc. Process gas introduction and channeling system to produce a profiled semiconductor layer
US4545236A (en) 1984-06-15 1985-10-08 The United States Of America As Represented By The Secretary Of Agriculture Device for simulating stress on packages during coupling of railcars
JPS6243554A (ja) 1985-08-20 1987-02-25 Yashima Denki Kk 湿度調整装置
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JP2523070B2 (ja) 1991-11-22 1996-08-07 株式会社半導体エネルギー研究所 プラズマ処理装置
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3249356B2 (ja) 1995-10-26 2002-01-21 三菱重工業株式会社 プラズマ化学蒸着装置
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010031381A (ja) * 2009-11-04 2010-02-12 Semiconductor Energy Lab Co Ltd プラズマｃｖｄ装置

Also Published As

Publication number Publication date
US20010050057A1 (en) 2001-12-13
JP2001279446A (ja) 2001-10-10
US7594479B2 (en) 2009-09-29

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