JP2001279446A5 - - Google Patents

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Publication number
JP2001279446A5
JP2001279446A5 JP2000092547A JP2000092547A JP2001279446A5 JP 2001279446 A5 JP2001279446 A5 JP 2001279446A5 JP 2000092547 A JP2000092547 A JP 2000092547A JP 2000092547 A JP2000092547 A JP 2000092547A JP 2001279446 A5 JP2001279446 A5 JP 2001279446A5
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JP
Japan
Prior art keywords
electrode
vacuum chamber
gas
openings
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000092547A
Other languages
English (en)
Japanese (ja)
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JP4439665B2 (ja
JP2001279446A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000092547A priority Critical patent/JP4439665B2/ja
Priority claimed from JP2000092547A external-priority patent/JP4439665B2/ja
Priority to US09/820,520 priority patent/US7594479B2/en
Publication of JP2001279446A publication Critical patent/JP2001279446A/ja
Publication of JP2001279446A5 publication Critical patent/JP2001279446A5/ja
Application granted granted Critical
Publication of JP4439665B2 publication Critical patent/JP4439665B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000092547A 2000-03-29 2000-03-29 プラズマcvd装置 Expired - Fee Related JP4439665B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000092547A JP4439665B2 (ja) 2000-03-29 2000-03-29 プラズマcvd装置
US09/820,520 US7594479B2 (en) 2000-03-29 2001-03-28 Plasma CVD device and discharge electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000092547A JP4439665B2 (ja) 2000-03-29 2000-03-29 プラズマcvd装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009252626A Division JP2010031381A (ja) 2009-11-04 2009-11-04 プラズマcvd装置

Publications (3)

Publication Number Publication Date
JP2001279446A JP2001279446A (ja) 2001-10-10
JP2001279446A5 true JP2001279446A5 (enExample) 2007-04-12
JP4439665B2 JP4439665B2 (ja) 2010-03-24

Family

ID=18607864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000092547A Expired - Fee Related JP4439665B2 (ja) 2000-03-29 2000-03-29 プラズマcvd装置

Country Status (2)

Country Link
US (1) US7594479B2 (enExample)
JP (1) JP4439665B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI328050B (en) * 2005-05-10 2010-08-01 Ulvac Inc Reeling type plasma cvd device
SG2012059440A (en) * 2007-08-10 2014-03-28 Quantum Global Tech Llc Methods and apparatus for ex situ seasoning of electronic device manufacturing process components
US8192806B1 (en) * 2008-02-19 2012-06-05 Novellus Systems, Inc. Plasma particle extraction process for PECVD
JP5698950B2 (ja) * 2009-10-23 2015-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2010031381A (ja) * 2009-11-04 2010-02-12 Semiconductor Energy Lab Co Ltd プラズマcvd装置
US8865259B2 (en) * 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
JP5793170B2 (ja) * 2013-09-30 2015-10-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6209064B2 (ja) * 2013-11-13 2017-10-04 東レエンジニアリング株式会社 薄膜形成装置
DE102017108290B4 (de) * 2016-04-25 2021-05-06 Toyota Jidosha Kabushiki Kaisha Plasmavorrichtung
US11251019B2 (en) 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
CN111575672B (zh) * 2020-06-05 2022-09-23 浙江晶驰光电科技有限公司 一种真空溅射镀膜机及其吸灰方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122581A (en) 1976-04-07 1977-10-14 Koatsu Gas Kogyo Method of promotion of swine health
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4410558A (en) 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4519339A (en) 1981-03-16 1985-05-28 Sovonics Solar Systems Continuous amorphous solar cell production system
JPS58216475A (ja) 1982-06-09 1983-12-16 Agency Of Ind Science & Technol シリコン太陽電池の製造方法
JPS5934668A (ja) 1982-08-21 1984-02-25 Agency Of Ind Science & Technol 薄膜太陽電池の製造方法
US4520757A (en) 1982-10-27 1985-06-04 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4479455A (en) 1983-03-14 1984-10-30 Energy Conversion Devices, Inc. Process gas introduction and channeling system to produce a profiled semiconductor layer
US4545236A (en) 1984-06-15 1985-10-08 The United States Of America As Represented By The Secretary Of Agriculture Device for simulating stress on packages during coupling of railcars
JPS6243554A (ja) 1985-08-20 1987-02-25 Yashima Denki Kk 湿度調整装置
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JP2523070B2 (ja) 1991-11-22 1996-08-07 株式会社半導体エネルギー研究所 プラズマ処理装置
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3249356B2 (ja) 1995-10-26 2002-01-21 三菱重工業株式会社 プラズマ化学蒸着装置
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus

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