JP4438312B2 - 電気光学装置及び電子機器 - Google Patents

電気光学装置及び電子機器 Download PDF

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Publication number
JP4438312B2
JP4438312B2 JP2003111530A JP2003111530A JP4438312B2 JP 4438312 B2 JP4438312 B2 JP 4438312B2 JP 2003111530 A JP2003111530 A JP 2003111530A JP 2003111530 A JP2003111530 A JP 2003111530A JP 4438312 B2 JP4438312 B2 JP 4438312B2
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Japan
Prior art keywords
light
region
shielding film
light shielding
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003111530A
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English (en)
Japanese (ja)
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JP2004046092A (ja
JP2004046092A5 (enExample
Inventor
正夫 村出
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2003111530A priority Critical patent/JP4438312B2/ja
Publication of JP2004046092A publication Critical patent/JP2004046092A/ja
Publication of JP2004046092A5 publication Critical patent/JP2004046092A5/ja
Application granted granted Critical
Publication of JP4438312B2 publication Critical patent/JP4438312B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2003111530A 2002-05-21 2003-04-16 電気光学装置及び電子機器 Expired - Lifetime JP4438312B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003111530A JP4438312B2 (ja) 2002-05-21 2003-04-16 電気光学装置及び電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002146434 2002-05-21
JP2003111530A JP4438312B2 (ja) 2002-05-21 2003-04-16 電気光学装置及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008323334A Division JP5141536B2 (ja) 2002-05-21 2008-12-19 電気光学装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2004046092A JP2004046092A (ja) 2004-02-12
JP2004046092A5 JP2004046092A5 (enExample) 2006-02-16
JP4438312B2 true JP4438312B2 (ja) 2010-03-24

Family

ID=31719593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003111530A Expired - Lifetime JP4438312B2 (ja) 2002-05-21 2003-04-16 電気光学装置及び電子機器

Country Status (1)

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JP (1) JP4438312B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730114B1 (ko) 2004-04-19 2007-06-19 삼성에스디아이 주식회사 평판표시장치
JP4513777B2 (ja) 2005-11-14 2010-07-28 セイコーエプソン株式会社 発光装置および電子機器
CN100511700C (zh) * 2005-11-14 2009-07-08 精工爱普生株式会社 发光装置和电子仪器
JP4702067B2 (ja) * 2006-01-16 2011-06-15 セイコーエプソン株式会社 電気光学装置、電子機器及びプロジェクタ
JP5167737B2 (ja) * 2007-09-14 2013-03-21 セイコーエプソン株式会社 電気光学装置及び電子機器
JP6008233B2 (ja) * 2012-03-23 2016-10-19 Ｎｌｔテクノロジー株式会社 画像表示装置
US9716134B2 (en) 2014-01-21 2017-07-25 Apple Inc. Organic light-emitting diode display with bottom shields
US9337247B2 (en) * 2014-01-21 2016-05-10 Apple Inc. Organic light-emitting diode display with bottom shields
CN111146267B (zh) * 2020-02-19 2023-06-02 合肥鑫晟光电科技有限公司 显示基板及其制造方法、显示装置
JP7739738B2 (ja) * 2021-03-29 2025-09-17 セイコーエプソン株式会社 光学モジュールおよび画像表示装置
CN117496878A (zh) * 2023-05-19 2024-02-02 武汉华星光电技术有限公司 显示装置

Also Published As

Publication number Publication date
JP2004046092A (ja) 2004-02-12

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