JP4414753B2 - 現像装置及び現像処理方法 - Google Patents

現像装置及び現像処理方法 Download PDF

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Publication number
JP4414753B2
JP4414753B2 JP2003435894A JP2003435894A JP4414753B2 JP 4414753 B2 JP4414753 B2 JP 4414753B2 JP 2003435894 A JP2003435894 A JP 2003435894A JP 2003435894 A JP2003435894 A JP 2003435894A JP 4414753 B2 JP4414753 B2 JP 4414753B2
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JP
Japan
Prior art keywords
developer
substrate
temperature
nozzle
resist
Prior art date
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Expired - Fee Related
Application number
JP2003435894A
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English (en)
Japanese (ja)
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JP2005197321A5 (enExample
JP2005197321A (ja
Inventor
太郎 山本
孝介 吉原
秀治 京田
博史 竹口
厚 大河内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003435894A priority Critical patent/JP4414753B2/ja
Priority to TW093136858A priority patent/TWI253110B/zh
Priority to US10/584,265 priority patent/US7918182B2/en
Priority to PCT/JP2004/019415 priority patent/WO2005064655A1/ja
Priority to EP04807771A priority patent/EP1708251A4/en
Priority to CNB2004800419965A priority patent/CN100539017C/zh
Publication of JP2005197321A publication Critical patent/JP2005197321A/ja
Publication of JP2005197321A5 publication Critical patent/JP2005197321A5/ja
Priority to KR1020067012569A priority patent/KR101069954B1/ko
Application granted granted Critical
Publication of JP4414753B2 publication Critical patent/JP4414753B2/ja
Priority to US13/024,939 priority patent/US8445189B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G03F7/3028—Imagewise removal using liquid means from a wafer supported on a rotating chuck characterised by means for on-wafer monitoring of the processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2003435894A 2003-12-26 2003-12-26 現像装置及び現像処理方法 Expired - Fee Related JP4414753B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003435894A JP4414753B2 (ja) 2003-12-26 2003-12-26 現像装置及び現像処理方法
TW093136858A TWI253110B (en) 2003-12-26 2004-11-30 Developing device and developing method
PCT/JP2004/019415 WO2005064655A1 (ja) 2003-12-26 2004-12-24 現像装置及び現像方法
EP04807771A EP1708251A4 (en) 2003-12-26 2004-12-24 DEVELOPMENT DEVICE AND DEVELOPMENT PROCESS
US10/584,265 US7918182B2 (en) 2003-12-26 2004-12-24 Developing device and developing method
CNB2004800419965A CN100539017C (zh) 2003-12-26 2004-12-24 显影装置及显影方法
KR1020067012569A KR101069954B1 (ko) 2003-12-26 2006-06-23 현상 장치
US13/024,939 US8445189B2 (en) 2003-12-26 2011-02-10 Developing device and developing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003435894A JP4414753B2 (ja) 2003-12-26 2003-12-26 現像装置及び現像処理方法

Publications (3)

Publication Number Publication Date
JP2005197321A JP2005197321A (ja) 2005-07-21
JP2005197321A5 JP2005197321A5 (enExample) 2005-12-15
JP4414753B2 true JP4414753B2 (ja) 2010-02-10

Family

ID=34736648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003435894A Expired - Fee Related JP4414753B2 (ja) 2003-12-26 2003-12-26 現像装置及び現像処理方法

Country Status (7)

Country Link
US (2) US7918182B2 (enExample)
EP (1) EP1708251A4 (enExample)
JP (1) JP4414753B2 (enExample)
KR (1) KR101069954B1 (enExample)
CN (1) CN100539017C (enExample)
TW (1) TWI253110B (enExample)
WO (1) WO2005064655A1 (enExample)

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* Cited by examiner, † Cited by third party
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WO2005055294A1 (ja) * 2003-12-02 2005-06-16 Tokyo Electron Limited 現像処理方法および現像処理装置
JP4199102B2 (ja) * 2003-12-18 2008-12-17 東京エレクトロン株式会社 基板の処理方法，基板処理システム及び現像液供給ノズル
JP4414753B2 (ja) * 2003-12-26 2010-02-10 東京エレクトロン株式会社 現像装置及び現像処理方法
KR100666357B1 (ko) 2005-09-26 2007-01-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
EP2082075B1 (en) * 2006-09-08 2017-05-17 Massachusetts Institute of Technology Automated layer by layer spray technology
JP4900117B2 (ja) * 2007-07-30 2012-03-21 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5225880B2 (ja) * 2009-02-04 2013-07-03 東京エレクトロン株式会社 現像処理方法
US20100209852A1 (en) * 2009-02-19 2010-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Track nozzle system for semiconductor fabrication
CN101907834B (zh) * 2009-06-03 2011-12-21 沈阳芯源微电子设备有限公司 真空显影机构
JP5212293B2 (ja) * 2009-07-17 2013-06-19 東京エレクトロン株式会社 現像装置、レジストパターンの形成方法及び記憶媒体
JP5719546B2 (ja) * 2009-09-08 2015-05-20 東京応化工業株式会社 塗布装置及び塗布方法
JP5469966B2 (ja) 2009-09-08 2014-04-16 東京応化工業株式会社 塗布装置及び塗布方法
CN102043353B (zh) * 2009-10-21 2014-05-21 中芯国际集成电路制造(上海)有限公司 用于在晶圆上喷涂显影液的方法
JP4893799B2 (ja) * 2009-10-23 2012-03-07 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP2011124352A (ja) * 2009-12-10 2011-06-23 Tokyo Electron Ltd 現像処理方法、プログラム及びコンピュータ記憶媒体
KR101337368B1 (ko) * 2010-10-27 2013-12-05 엘지디스플레이 주식회사 코팅장치 및 이를 이용한 코팅막 형성방법
JP5304771B2 (ja) 2010-11-30 2013-10-02 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5320383B2 (ja) * 2010-12-27 2013-10-23 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP5994315B2 (ja) * 2011-03-25 2016-09-21 凸版印刷株式会社 現像ノズル、パドル現像装置およびパドル現像方法
US8932962B2 (en) * 2012-04-09 2015-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical dispensing system and method
JP6449752B2 (ja) * 2014-12-01 2019-01-09 東京エレクトロン株式会社 現像処理方法、コンピュータ記憶媒体及び現像処理装置
US10386723B2 (en) * 2016-03-04 2019-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with flexible solution adjustment
US10007191B2 (en) * 2016-07-15 2018-06-26 Kla-Tencor Corporation Method for computer modeling and simulation of negative-tone-developable photoresists
CN106444304B (zh) * 2016-11-18 2019-08-23 昆山国显光电有限公司 显影装置以及显影液活性度的补偿方法
CN107168020A (zh) * 2017-07-11 2017-09-15 信丰迅捷兴电路科技有限公司 一种线路板阻焊用自动显影生产系统
CN108345187A (zh) * 2018-02-02 2018-07-31 武汉华星光电技术有限公司 显影腔室及其喷淋组件、显影方法
JP7055061B2 (ja) * 2018-05-01 2022-04-15 東京エレクトロン株式会社 温調機構及び液処理装置
CN112859555A (zh) * 2021-02-05 2021-05-28 长春长光圆辰微电子技术有限公司 一种光刻胶显影残渣去除方法
KR102585104B1 (ko) 2021-06-03 2023-10-06 세메스 주식회사 액 처리 장치 및 약액 제어 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02270318A (ja) 1989-04-11 1990-11-05 Seiko Epson Corp 現像装置
JP2871747B2 (ja) 1989-10-06 1999-03-17 東京エレクトロン株式会社 処理装置
JP3124017B2 (ja) 1990-04-03 2001-01-15 チッソ株式会社 熱接着性繊維および不織布
JP3254574B2 (ja) 1996-08-30 2002-02-12 東京エレクトロン株式会社 塗布膜形成方法及びその装置
TW396382B (en) * 1997-07-03 2000-07-01 Tokyo Electron Ltd Solution treatment apparatus
JPH11260707A (ja) 1998-03-09 1999-09-24 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP3652169B2 (ja) * 1999-04-30 2005-05-25 大日本スクリーン製造株式会社 基板現像装置
JP3535997B2 (ja) * 1999-10-01 2004-06-07 東京エレクトロン株式会社 現像処理装置及び現像処理方法
US6384894B2 (en) * 2000-01-21 2002-05-07 Tokyo Electron Limited Developing method and developing unit
JP2001274082A (ja) * 2000-01-21 2001-10-05 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP3688976B2 (ja) 2000-05-24 2005-08-31 東京エレクトロン株式会社 処理液吐出装置
JP3869306B2 (ja) 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
JP3880480B2 (ja) * 2001-12-06 2007-02-14 東京エレクトロン株式会社 液処理装置
JP2003303752A (ja) * 2002-04-08 2003-10-24 Hitachi Ltd 半導体装置の製造方法
JP4369325B2 (ja) * 2003-12-26 2009-11-18 東京エレクトロン株式会社 現像装置及び現像処理方法
JP4414753B2 (ja) * 2003-12-26 2010-02-10 東京エレクトロン株式会社 現像装置及び現像処理方法
JP4657940B2 (ja) * 2006-02-10 2011-03-23 東京エレクトロン株式会社 基板の処理システム

Also Published As

Publication number Publication date
US20070184178A1 (en) 2007-08-09
EP1708251A1 (en) 2006-10-04
US8445189B2 (en) 2013-05-21
TWI253110B (en) 2006-04-11
JP2005197321A (ja) 2005-07-21
US7918182B2 (en) 2011-04-05
EP1708251A4 (en) 2011-05-04
TW200524019A (en) 2005-07-16
KR101069954B1 (ko) 2011-10-04
KR20070007260A (ko) 2007-01-15
WO2005064655A1 (ja) 2005-07-14
US20110127236A1 (en) 2011-06-02
CN101124658A (zh) 2008-02-13
CN100539017C (zh) 2009-09-09

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