JP4402396B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4402396B2
JP4402396B2 JP2003288659A JP2003288659A JP4402396B2 JP 4402396 B2 JP4402396 B2 JP 4402396B2 JP 2003288659 A JP2003288659 A JP 2003288659A JP 2003288659 A JP2003288659 A JP 2003288659A JP 4402396 B2 JP4402396 B2 JP 4402396B2
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JP
Japan
Prior art keywords
semiconductor layer
forming
gate electrode
insulating film
conductive film
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Expired - Fee Related
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JP2003288659A
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English (en)
Japanese (ja)
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JP2005057167A (ja
JP2005057167A5 (enrdf_load_stackoverflow
Inventor
達也 荒尾
剛司 野田
昌彦 早川
英人 北角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP2003288659A priority Critical patent/JP4402396B2/ja
Publication of JP2005057167A publication Critical patent/JP2005057167A/ja
Publication of JP2005057167A5 publication Critical patent/JP2005057167A5/ja
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Publication of JP4402396B2 publication Critical patent/JP4402396B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003288659A 2003-08-07 2003-08-07 半導体装置の作製方法 Expired - Fee Related JP4402396B2 (ja)

Priority Applications (1)

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JP2003288659A JP4402396B2 (ja) 2003-08-07 2003-08-07 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003288659A JP4402396B2 (ja) 2003-08-07 2003-08-07 半導体装置の作製方法

Publications (3)

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JP2005057167A JP2005057167A (ja) 2005-03-03
JP2005057167A5 JP2005057167A5 (enrdf_load_stackoverflow) 2006-08-17
JP4402396B2 true JP4402396B2 (ja) 2010-01-20

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JP2003288659A Expired - Fee Related JP4402396B2 (ja) 2003-08-07 2003-08-07 半導体装置の作製方法

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JP (1) JP4402396B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
KR102095625B1 (ko) 2008-10-24 2020-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102576732B (zh) 2009-07-18 2015-02-25 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
CN113013218B (zh) * 2021-03-09 2024-05-24 武汉天马微电子有限公司 阵列基板、显示面板及显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999039241A1 (fr) * 1998-01-30 1999-08-05 Hitachi, Ltd. Dispositif d'affichage a cristaux liquides
JP4583529B2 (ja) * 1998-11-09 2010-11-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3901893B2 (ja) * 1998-11-25 2007-04-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4939689B2 (ja) * 2000-01-26 2012-05-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4583654B2 (ja) * 2000-05-13 2010-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4064075B2 (ja) * 2000-06-07 2008-03-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4926329B2 (ja) * 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具
JP3813555B2 (ja) * 2001-08-29 2006-08-23 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4785300B2 (ja) * 2001-09-07 2011-10-05 株式会社半導体エネルギー研究所 電気泳動型表示装置、表示装置、及び電子機器

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