JP4395941B2 - 任意電圧発生構造及びこれを用いた固体撮像素子 - Google Patents
任意電圧発生構造及びこれを用いた固体撮像素子 Download PDFInfo
- Publication number
- JP4395941B2 JP4395941B2 JP31280699A JP31280699A JP4395941B2 JP 4395941 B2 JP4395941 B2 JP 4395941B2 JP 31280699 A JP31280699 A JP 31280699A JP 31280699 A JP31280699 A JP 31280699A JP 4395941 B2 JP4395941 B2 JP 4395941B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- insulating film
- substrate
- film
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1534—Interline transfer
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31280699A JP4395941B2 (ja) | 1999-09-29 | 1999-09-29 | 任意電圧発生構造及びこれを用いた固体撮像素子 |
| KR1020000057446A KR20010030546A (ko) | 1999-09-29 | 2000-09-29 | 임의 전압 발생 구조 및 이 구조를 사용하는 고체 촬상 소자 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31280699A JP4395941B2 (ja) | 1999-09-29 | 1999-09-29 | 任意電圧発生構造及びこれを用いた固体撮像素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001102533A JP2001102533A (ja) | 2001-04-13 |
| JP2001102533A5 JP2001102533A5 (enExample) | 2006-05-11 |
| JP4395941B2 true JP4395941B2 (ja) | 2010-01-13 |
Family
ID=18033644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31280699A Expired - Fee Related JP4395941B2 (ja) | 1999-09-29 | 1999-09-29 | 任意電圧発生構造及びこれを用いた固体撮像素子 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4395941B2 (enExample) |
| KR (1) | KR20010030546A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4940517B2 (ja) * | 2001-08-07 | 2012-05-30 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP2005277398A (ja) * | 2004-02-25 | 2005-10-06 | Sony Corp | Ccdリニアセンサ |
| KR100594262B1 (ko) * | 2004-03-05 | 2006-06-30 | 삼성전자주식회사 | 바이어스 회로, 이를 구비한 고체 촬상 소자 및 그 제조방법 |
| KR101096439B1 (ko) | 2006-06-29 | 2011-12-20 | 주식회사 하이닉스반도체 | 반도체 소자의 퓨즈 박스 형성방법 |
-
1999
- 1999-09-29 JP JP31280699A patent/JP4395941B2/ja not_active Expired - Fee Related
-
2000
- 2000-09-29 KR KR1020000057446A patent/KR20010030546A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010030546A (ko) | 2001-04-16 |
| JP2001102533A (ja) | 2001-04-13 |
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