KR20010030546A - 임의 전압 발생 구조 및 이 구조를 사용하는 고체 촬상 소자 - Google Patents

임의 전압 발생 구조 및 이 구조를 사용하는 고체 촬상 소자 Download PDF

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Publication number
KR20010030546A
KR20010030546A KR1020000057446A KR20000057446A KR20010030546A KR 20010030546 A KR20010030546 A KR 20010030546A KR 1020000057446 A KR1020000057446 A KR 1020000057446A KR 20000057446 A KR20000057446 A KR 20000057446A KR 20010030546 A KR20010030546 A KR 20010030546A
Authority
KR
South Korea
Prior art keywords
substrate
fuses
fuse
voltage
arbitrary voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020000057446A
Other languages
English (en)
Korean (ko)
Inventor
다니가와고우이찌
Original Assignee
이데이 노부유끼
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유끼, 소니 가부시끼 가이샤 filed Critical 이데이 노부유끼
Publication of KR20010030546A publication Critical patent/KR20010030546A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020000057446A 1999-09-29 2000-09-29 임의 전압 발생 구조 및 이 구조를 사용하는 고체 촬상 소자 Withdrawn KR20010030546A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31280699A JP4395941B2 (ja) 1999-09-29 1999-09-29 任意電圧発生構造及びこれを用いた固体撮像素子
JP1999-312806 1999-09-29

Publications (1)

Publication Number Publication Date
KR20010030546A true KR20010030546A (ko) 2001-04-16

Family

ID=18033644

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000057446A Withdrawn KR20010030546A (ko) 1999-09-29 2000-09-29 임의 전압 발생 구조 및 이 구조를 사용하는 고체 촬상 소자

Country Status (2)

Country Link
JP (1) JP4395941B2 (enExample)
KR (1) KR20010030546A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466284C (zh) * 2004-03-05 2009-03-04 三星电子株式会社 偏置电路、固态成像装置及其制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4940517B2 (ja) * 2001-08-07 2012-05-30 ソニー株式会社 固体撮像装置およびその製造方法
JP2005277398A (ja) * 2004-02-25 2005-10-06 Sony Corp Ｃｃｄリニアセンサ
KR101096439B1 (ko) 2006-06-29 2011-12-20 주식회사 하이닉스반도체 반도체 소자의 퓨즈 박스 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466284C (zh) * 2004-03-05 2009-03-04 三星电子株式会社 偏置电路、固态成像装置及其制造方法

Also Published As

Publication number Publication date
JP2001102533A (ja) 2001-04-13
JP4395941B2 (ja) 2010-01-13

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20000929

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid