JPS6137798B2 - - Google Patents
Info
- Publication number
- JPS6137798B2 JPS6137798B2 JP56093277A JP9327781A JPS6137798B2 JP S6137798 B2 JPS6137798 B2 JP S6137798B2 JP 56093277 A JP56093277 A JP 56093277A JP 9327781 A JP9327781 A JP 9327781A JP S6137798 B2 JPS6137798 B2 JP S6137798B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- substrate
- copper
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13017—Shape in side view being non uniform along the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56093277A JPS57207362A (en) | 1981-06-16 | 1981-06-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56093277A JPS57207362A (en) | 1981-06-16 | 1981-06-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57207362A JPS57207362A (en) | 1982-12-20 |
| JPS6137798B2 true JPS6137798B2 (enExample) | 1986-08-26 |
Family
ID=14077934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56093277A Granted JPS57207362A (en) | 1981-06-16 | 1981-06-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57207362A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013004921A (ja) * | 2011-06-21 | 2013-01-07 | Shinko Electric Ind Co Ltd | 突起電極の製造方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61229342A (ja) * | 1985-04-03 | 1986-10-13 | Fujitsu Ltd | バンプ電極の接続方法 |
| JP2574145B2 (ja) * | 1985-05-10 | 1997-01-22 | 富士通株式会社 | 半導体装置 |
| JPH0793306B2 (ja) * | 1987-08-05 | 1995-10-09 | 日本電装株式会社 | 半導体集積回路装置 |
| WO1999004424A1 (fr) | 1997-07-15 | 1999-01-28 | Hitachi, Ltd. | Dispositif a semi-conducteur, et structure de montage et procede de fabrication associes |
| US6403876B1 (en) * | 2000-12-07 | 2002-06-11 | International Business Machines Corporation | Enhanced interface thermoelectric coolers with all-metal tips |
| FR2857780B1 (fr) * | 2003-07-18 | 2005-09-09 | Commissariat Energie Atomique | Procede de fabrication de film conducteur anisotrope sur un substrat |
-
1981
- 1981-06-16 JP JP56093277A patent/JPS57207362A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013004921A (ja) * | 2011-06-21 | 2013-01-07 | Shinko Electric Ind Co Ltd | 突起電極の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57207362A (en) | 1982-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6117299A (en) | Methods of electroplating solder bumps of uniform height on integrated circuit substrates | |
| KR101920967B1 (ko) | 금속 블록 및 본드 패드 구조물 | |
| US6022797A (en) | Method of manufacturing through holes in a semiconductor device | |
| TW201143002A (en) | Semiconductor structure and method of forming semiconductor device | |
| US5034345A (en) | Method of fabricating a bump electrode for an integrated circuit device | |
| US7663213B2 (en) | Wafer level chip size packaged chip device with a double-layer lead structure and method of fabricating the same | |
| CN112789488B (zh) | 红外检测器制造方法和相关红外检测器 | |
| JPS6137798B2 (enExample) | ||
| CN100438080C (zh) | 具有一个或多个导电触点的辐射检测器及其制造方法 | |
| JPS5916472A (ja) | 固体撮像装置 | |
| JP3457926B2 (ja) | 半導体装置およびその製造方法 | |
| JPH01194439A (ja) | 半導体装置の製造方法 | |
| EP0037244B1 (en) | Method for fabricating a solid-state imaging device using photoconductive film | |
| JP2002299366A (ja) | 半導体装置およびその製造方法 | |
| CN223310206U (zh) | 影像传感器 | |
| JP2672557B2 (ja) | 半導体装置の製造方法 | |
| JP3278917B2 (ja) | 固体撮像装置の製造方法 | |
| JP2754969B2 (ja) | バンプ形成領域を有する半導体装置 | |
| US6329219B1 (en) | Method of processing a semiconductor device | |
| JP2581258B2 (ja) | バンプ電極の形成方法 | |
| KR840001604B1 (ko) | 고체촬상소자의 제조방법 | |
| JPH07153905A (ja) | 半導体装置とその製造方法 | |
| JPH0322755B2 (enExample) | ||
| JPH098269A (ja) | ハイブリッド型固体撮像装置及びその製造方法 | |
| JP2002299373A (ja) | 半導体装置の製造方法 |