JP4395609B2 - 窒化ガリウム系材料からなる基板 - Google Patents
窒化ガリウム系材料からなる基板 Download PDFInfo
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- JP4395609B2 JP4395609B2 JP2008065209A JP2008065209A JP4395609B2 JP 4395609 B2 JP4395609 B2 JP 4395609B2 JP 2008065209 A JP2008065209 A JP 2008065209A JP 2008065209 A JP2008065209 A JP 2008065209A JP 4395609 B2 JP4395609 B2 JP 4395609B2
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008065209A JP4395609B2 (ja) | 2006-03-13 | 2008-03-14 | 窒化ガリウム系材料からなる基板 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006067907 | 2006-03-13 | ||
| JP2008065209A JP4395609B2 (ja) | 2006-03-13 | 2008-03-14 | 窒化ガリウム系材料からなる基板 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007056353A Division JP4187175B2 (ja) | 2006-03-13 | 2007-03-06 | 窒化ガリウム系材料の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2009169526A Division JP5105258B2 (ja) | 2006-03-13 | 2009-07-17 | 窒化ガリウム系材料及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
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| JP2008179536A JP2008179536A (ja) | 2008-08-07 |
| JP4395609B2 true JP4395609B2 (ja) | 2010-01-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008065209A Active JP4395609B2 (ja) | 2006-03-13 | 2008-03-14 | 窒化ガリウム系材料からなる基板 |
| JP2009169526A Active JP5105258B2 (ja) | 2006-03-13 | 2009-07-17 | 窒化ガリウム系材料及びその製造方法 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2009169526A Active JP5105258B2 (ja) | 2006-03-13 | 2009-07-17 | 窒化ガリウム系材料及びその製造方法 |
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| JP (2) | JP4395609B2 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5534172B2 (ja) * | 2009-01-08 | 2014-06-25 | 三菱化学株式会社 | 窒化物結晶の製造方法 |
| JP5665171B2 (ja) * | 2010-05-14 | 2015-02-04 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法 |
| JP2011256082A (ja) * | 2010-06-10 | 2011-12-22 | Sumitomo Electric Ind Ltd | ＧａＮ結晶自立基板およびその製造方法 |
| WO2013058350A1 (ja) * | 2011-10-21 | 2013-04-25 | 三菱化学株式会社 | 周期表第１３族金属窒化物半導体結晶の製造方法、及び該製造方法により製造される周期表第１３族金属窒化物半導体結晶 |
| JP6064695B2 (ja) * | 2012-03-22 | 2017-01-25 | 三菱化学株式会社 | 窒化ガリウム結晶、及び窒化ガリウム結晶の製造方法 |
| KR102152786B1 (ko) * | 2012-07-13 | 2020-09-08 | 갈리움 엔터프라이지즈 피티와이 엘티디 | 필름 형성 장치 및 방법 |
| JP6835019B2 (ja) * | 2018-03-14 | 2021-02-24 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
| JP7552359B2 (ja) * | 2018-08-17 | 2024-09-18 | 三菱ケミカル株式会社 | ｎ型ＧａＮ結晶、ＧａＮウエハ、ならびに、ＧａＮ結晶、ＧａＮウエハおよび窒化物半導体デバイスの製造方法 |
| KR20220014873A (ko) | 2019-05-30 | 2022-02-07 | 미쯔비시 케미컬 주식회사 | GaN 기판 웨이퍼 및 그 제조 방법 |
| KR102826740B1 (ko) * | 2019-05-30 | 2025-06-27 | 미쯔비시 케미컬 주식회사 | GaN 기판 웨이퍼 및 그 제조 방법 |
| JP7738414B2 (ja) * | 2021-06-21 | 2025-09-12 | パナソニックホールディングス株式会社 | Ｉｉｉ族化合物半導体結晶の製造装置 |
| JP7215630B1 (ja) | 2022-08-22 | 2023-01-31 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2415707A (en) * | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
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2008
- 2008-03-14 JP JP2008065209A patent/JP4395609B2/ja active Active
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2009
- 2009-07-17 JP JP2009169526A patent/JP5105258B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008179536A (ja) | 2008-08-07 |
| JP5105258B2 (ja) | 2012-12-26 |
| JP2009269816A (ja) | 2009-11-19 |
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