JP4387471B2 - 非均一な磁界を有する磁気励起プラズマチャンバ - Google Patents

非均一な磁界を有する磁気励起プラズマチャンバ Download PDF

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Publication number
JP4387471B2
JP4387471B2 JP36040197A JP36040197A JP4387471B2 JP 4387471 B2 JP4387471 B2 JP 4387471B2 JP 36040197 A JP36040197 A JP 36040197A JP 36040197 A JP36040197 A JP 36040197A JP 4387471 B2 JP4387471 B2 JP 4387471B2
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magnetic field
magnetic pole
current
magnetic
wafer
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Expired - Fee Related
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JP36040197A
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English (en)
Japanese (ja)
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JPH10233390A (ja
Inventor
シャン ホンチン
リンドリー ロジャー
ビョークマン クラエス
ユ チャン シュー
プラヴィダル リチャード
プ ブライアン
ディング ジ
リ ゾンギュ
キ クアン−ハン
ウェルチ マイケル
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP36040197A 1997-01-02 1997-12-26 非均一な磁界を有する磁気励起プラズマチャンバ Expired - Fee Related JP4387471B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/735,444 US6113731A (en) 1997-01-02 1997-01-02 Magnetically-enhanced plasma chamber with non-uniform magnetic field
US08/735444 1997-01-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008272473A Division JP4932811B2 (ja) 1997-01-02 2008-10-22 非均一な磁界を有する磁気励起プラズマチャンバ

Publications (2)

Publication Number Publication Date
JPH10233390A JPH10233390A (ja) 1998-09-02
JP4387471B2 true JP4387471B2 (ja) 2009-12-16

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP36040197A Expired - Fee Related JP4387471B2 (ja) 1997-01-02 1997-12-26 非均一な磁界を有する磁気励起プラズマチャンバ
JP2008272473A Expired - Fee Related JP4932811B2 (ja) 1997-01-02 2008-10-22 非均一な磁界を有する磁気励起プラズマチャンバ

Family Applications After (1)

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JP2008272473A Expired - Fee Related JP4932811B2 (ja) 1997-01-02 2008-10-22 非均一な磁界を有する磁気励起プラズマチャンバ

Country Status (5)

Country Link
US (1) US6113731A (enExample)
EP (1) EP0852389A3 (enExample)
JP (2) JP4387471B2 (enExample)
KR (1) KR100564087B1 (enExample)
TW (1) TW439110B (enExample)

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KR19980070306A (ko) 1998-10-26
US6113731A (en) 2000-09-05
EP0852389A3 (en) 2002-01-02
EP0852389A2 (en) 1998-07-08
JPH10233390A (ja) 1998-09-02
JP2009027194A (ja) 2009-02-05
KR100564087B1 (ko) 2006-11-10
JP4932811B2 (ja) 2012-05-16
TW439110B (en) 2001-06-07

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