JP4371822B2 - 露光装置 - Google Patents

露光装置 Download PDF

Info

Publication number
JP4371822B2
JP4371822B2 JP2004000827A JP2004000827A JP4371822B2 JP 4371822 B2 JP4371822 B2 JP 4371822B2 JP 2004000827 A JP2004000827 A JP 2004000827A JP 2004000827 A JP2004000827 A JP 2004000827A JP 4371822 B2 JP4371822 B2 JP 4371822B2
Authority
JP
Japan
Prior art keywords
liquid
temperature
wafer
optical system
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004000827A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005197384A (ja
JP2005197384A5 (enExample
Inventor
英悟 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004000827A priority Critical patent/JP4371822B2/ja
Priority to US11/030,515 priority patent/US7382434B2/en
Publication of JP2005197384A publication Critical patent/JP2005197384A/ja
Priority to US12/060,393 priority patent/US7719659B2/en
Publication of JP2005197384A5 publication Critical patent/JP2005197384A5/ja
Application granted granted Critical
Publication of JP4371822B2 publication Critical patent/JP4371822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004000827A 2004-01-06 2004-01-06 露光装置 Expired - Fee Related JP4371822B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004000827A JP4371822B2 (ja) 2004-01-06 2004-01-06 露光装置
US11/030,515 US7382434B2 (en) 2004-01-06 2005-01-05 Exposure apparatus and device manufacturing method
US12/060,393 US7719659B2 (en) 2004-01-06 2008-04-01 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004000827A JP4371822B2 (ja) 2004-01-06 2004-01-06 露光装置

Publications (3)

Publication Number Publication Date
JP2005197384A JP2005197384A (ja) 2005-07-21
JP2005197384A5 JP2005197384A5 (enExample) 2009-09-17
JP4371822B2 true JP4371822B2 (ja) 2009-11-25

Family

ID=34708978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004000827A Expired - Fee Related JP4371822B2 (ja) 2004-01-06 2004-01-06 露光装置

Country Status (2)

Country Link
US (2) US7382434B2 (enExample)
JP (1) JP4371822B2 (enExample)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
WO2004086468A1 (ja) 2003-02-26 2004-10-07 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
WO2004086470A1 (ja) * 2003-03-25 2004-10-07 Nikon Corporation 露光装置及びデバイス製造方法
KR101176817B1 (ko) 2003-04-07 2012-08-24 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
KR101177331B1 (ko) * 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
KR101369016B1 (ko) * 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
JP4488005B2 (ja) * 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
EP3352015A1 (en) * 2003-04-10 2018-07-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
EP2161620A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
KR20180054929A (ko) * 2003-04-11 2018-05-24 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
SG194246A1 (en) 2003-04-17 2013-11-29 Nikon Corp Optical arrangement of autofocus elements for use with immersion lithography
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20060009356A (ko) * 2003-05-15 2006-01-31 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TW201515064A (zh) 2003-05-23 2015-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
KR20150036794A (ko) * 2003-05-28 2015-04-07 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A3 (en) 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101242815B1 (ko) 2003-06-13 2013-03-12 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조방법
TWI482200B (zh) 2003-06-19 2015-04-21 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
US7236232B2 (en) * 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
EP2466383B1 (en) * 2003-07-08 2014-11-19 Nikon Corporation Wafer table for immersion lithography
KR101296501B1 (ko) * 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP2264531B1 (en) * 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
ATE489724T1 (de) * 2003-07-09 2010-12-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementherstellung
WO2005010960A1 (ja) 2003-07-25 2005-02-03 Nikon Corporation 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法
EP1653501B1 (en) 2003-07-28 2012-09-19 Nikon Corporation Exposure apparatus, device producing method, and exposure apparatus controlling method
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101303536B (zh) * 2003-08-29 2011-02-09 株式会社尼康 曝光装置和器件加工方法
EP3223053A1 (en) * 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101335736B1 (ko) 2003-09-29 2013-12-02 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
KR101111364B1 (ko) * 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
TW201738932A (zh) 2003-10-09 2017-11-01 尼康股份有限公司 曝光裝置及曝光方法、元件製造方法
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN102163005B (zh) * 2003-12-03 2014-05-21 株式会社尼康 投影曝光装置、器件制造方法以及光学部件
KR101345443B1 (ko) 2003-12-15 2013-12-27 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
KR101111363B1 (ko) * 2003-12-15 2012-04-12 가부시키가이샤 니콘 투영노광장치 및 스테이지 장치, 그리고 노광방법
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
KR101204157B1 (ko) * 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
EP1713114B1 (en) 2004-02-03 2018-09-19 Nikon Corporation Exposure apparatus and device manufacturing method
KR101554772B1 (ko) * 2004-02-04 2015-09-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR101504445B1 (ko) 2004-03-25 2015-03-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1747499A2 (en) * 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
CN105467775B (zh) * 2004-06-09 2018-04-10 株式会社尼康 曝光装置及元件制造方法
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602005016429D1 (de) 2004-07-12 2009-10-15 Nippon Kogaku Kk Hren
US8305553B2 (en) * 2004-08-18 2012-11-06 Nikon Corporation Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070095399A (ko) * 2005-01-25 2007-09-28 제이에스알 가부시끼가이샤 액침형 노광 시스템, 액침형 노광용 액체의 리사이클 방법및 공급 방법
EP2506289A3 (en) 2005-01-31 2013-05-22 Nikon Corporation Exposure apparatus and method for manufacturing device
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) * 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
JP4072543B2 (ja) * 2005-03-18 2008-04-09 キヤノン株式会社 液浸露光装置及びデバイス製造方法
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
EP1873816A4 (en) * 2005-04-18 2010-11-24 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENTS MANUFACTURING METHOD
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
JP5194799B2 (ja) * 2005-12-06 2013-05-08 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2008053918A1 (en) * 2006-10-31 2008-05-08 Nikon Corporation Liquid holding apparatus, liquid holding method, exposure apparatus, exposure method and device manufacturing method
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
US8681308B2 (en) * 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8629970B2 (en) * 2008-01-23 2014-01-14 Asml Netherlands B.V. Immersion lithographic apparatus with immersion fluid re-circulating system
JP5369443B2 (ja) 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US9176393B2 (en) * 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
JP2010098172A (ja) * 2008-10-17 2010-04-30 Canon Inc 液体回収装置、露光装置及びデバイス製造方法
MX2012007581A (es) * 2009-12-28 2012-07-30 Pioneer Hi Bred Int Genotipos restauradores de la fertilidad de sorgo y metodos de seleccion asistida por marcadores.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
USRE49066E1 (en) 2015-10-06 2022-05-10 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
CN113490884B (zh) * 2019-02-11 2025-02-28 Asml荷兰有限公司 具有热控制系统的光刻设备和方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
DE68921687T2 (de) * 1988-09-02 1995-08-03 Canon K.K., Tokio/Tokyo Belichtungseinrichtung.
JP3253675B2 (ja) * 1991-07-04 2002-02-04 株式会社東芝 荷電ビーム照射装置及び方法
US5430303A (en) * 1992-07-01 1995-07-04 Nikon Corporation Exposure apparatus
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6105589A (en) * 1999-01-11 2000-08-22 Vane; Ronald A. Oxidative cleaning method and apparatus for electron microscopes using an air plasma as an oxygen radical source
JP2000277415A (ja) * 1999-03-25 2000-10-06 Canon Inc 露光装置
US6394109B1 (en) * 1999-04-13 2002-05-28 Applied Materials, Inc. Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system
US6614505B2 (en) * 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
DE60323927D1 (de) * 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
KR101177331B1 (ko) * 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR101369016B1 (ko) * 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
EP2161620A1 (en) * 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
US7061579B2 (en) * 2003-11-13 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
US7271878B2 (en) * 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography

Also Published As

Publication number Publication date
US20080186463A1 (en) 2008-08-07
JP2005197384A (ja) 2005-07-21
US20050146695A1 (en) 2005-07-07
US7719659B2 (en) 2010-05-18
US7382434B2 (en) 2008-06-03

Similar Documents

Publication Publication Date Title
JP4371822B2 (ja) 露光装置
US7256868B2 (en) Projection exposure apparatus, device manufacturing method, and sensor unit
KR100727516B1 (ko) 노광장치 및 디바이스 제조방법
US8018657B2 (en) Optical arrangement of autofocus elements for use with immersion lithography
US7180574B2 (en) Exposure apparatus and method
JP4362867B2 (ja) 露光装置及びデバイス製造方法
JP4974049B2 (ja) 露光方法、露光装置、並びにデバイス製造方法
EP1670040B1 (en) Projection exposure apparatus, projection exposure method, and device manufacturing method
KR20060129387A (ko) 노광 장치, 노광 방법, 디바이스 제조 방법
KR101560007B1 (ko) 노광 장치의 조정 방법, 노광 장치, 및 디바이스 제조 방법
JPWO2010050240A1 (ja) 露光装置、露光方法、及びデバイス製造方法
JP2008244386A (ja) 収差計測方法、露光装置及びデバイス製造方法
JP4072543B2 (ja) 液浸露光装置及びデバイス製造方法
US7803516B2 (en) Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
KR20080074043A (ko) 노광장치
JP2010034605A (ja) 露光装置及びデバイス製造方法
JP2011124415A (ja) 露光装置、露光方法、及びデバイス製造方法
JP2009099694A (ja) 露光装置およびデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090731

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090825

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090901

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120911

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees